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Hu M, Li Z, Gao X, Jiang D, Liu Z, Guo L, Zhao X, He J, Sun J, Weng L, Wang D. XPS Investigation of the Oxidation States of the As-Deposited Ta Films Prepared by Magnetron Sputtering Technology. MATERIALS (BASEL, SWITZERLAND) 2023; 16:7405. [PMID: 38068149 PMCID: PMC10707248 DOI: 10.3390/ma16237405] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/10/2023] [Revised: 11/23/2023] [Accepted: 11/24/2023] [Indexed: 04/07/2024]
Abstract
Due to their versatile and unique properties, tantalum-based thin films have been extensively studied. However, tantalum is susceptible to oxidation due to its higher chemical activity, which is crucial regardless of whether oxidations of Ta are beneficial or detrimental. Therefore, the oxidation of Ta during material processing, especially without conscious means, should be taken seriously. In this study, pure Ta films were fabricated by magnetron sputtering under set procedure parameters. The effects of base pressure and substrate temperature on the degree of oxidation of Ta films were investigated. The results revealed that the magnitude of the base pressure directly affects the oxidation state of the as-deposited Ta films. When preferably avoiding the oxidation of sputtered Ta films, the base pressure should be controlled below 4.4 × 10-4 Pa. The substrate temperature has little effect on the oxidation state of the as-deposited Ta films under a base pressure ranging from about 10-2 Pa to 10-4. We hope that this study can provide some references for controlling the oxidation states of Ta involved in relevant film preparation.
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Affiliation(s)
- Ming Hu
- Key Laboratory of Science and Technology on Wear and Protection of Materials, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China; (Z.L.); (X.G.); (D.J.); (Z.L.); (L.G.); (X.Z.); (J.H.); (J.S.); (L.W.)
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhaowang Li
- Key Laboratory of Science and Technology on Wear and Protection of Materials, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China; (Z.L.); (X.G.); (D.J.); (Z.L.); (L.G.); (X.Z.); (J.H.); (J.S.); (L.W.)
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xiaoming Gao
- Key Laboratory of Science and Technology on Wear and Protection of Materials, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China; (Z.L.); (X.G.); (D.J.); (Z.L.); (L.G.); (X.Z.); (J.H.); (J.S.); (L.W.)
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Dong Jiang
- Key Laboratory of Science and Technology on Wear and Protection of Materials, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China; (Z.L.); (X.G.); (D.J.); (Z.L.); (L.G.); (X.Z.); (J.H.); (J.S.); (L.W.)
| | - Zhilu Liu
- Key Laboratory of Science and Technology on Wear and Protection of Materials, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China; (Z.L.); (X.G.); (D.J.); (Z.L.); (L.G.); (X.Z.); (J.H.); (J.S.); (L.W.)
| | - Longbang Guo
- Key Laboratory of Science and Technology on Wear and Protection of Materials, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China; (Z.L.); (X.G.); (D.J.); (Z.L.); (L.G.); (X.Z.); (J.H.); (J.S.); (L.W.)
| | - Xu Zhao
- Key Laboratory of Science and Technology on Wear and Protection of Materials, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China; (Z.L.); (X.G.); (D.J.); (Z.L.); (L.G.); (X.Z.); (J.H.); (J.S.); (L.W.)
| | - Jun He
- Key Laboratory of Science and Technology on Wear and Protection of Materials, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China; (Z.L.); (X.G.); (D.J.); (Z.L.); (L.G.); (X.Z.); (J.H.); (J.S.); (L.W.)
| | - Jiayi Sun
- Key Laboratory of Science and Technology on Wear and Protection of Materials, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China; (Z.L.); (X.G.); (D.J.); (Z.L.); (L.G.); (X.Z.); (J.H.); (J.S.); (L.W.)
| | - Lijun Weng
- Key Laboratory of Science and Technology on Wear and Protection of Materials, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China; (Z.L.); (X.G.); (D.J.); (Z.L.); (L.G.); (X.Z.); (J.H.); (J.S.); (L.W.)
| | - Desheng Wang
- Key Laboratory of Science and Technology on Wear and Protection of Materials, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000, China; (Z.L.); (X.G.); (D.J.); (Z.L.); (L.G.); (X.Z.); (J.H.); (J.S.); (L.W.)
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China
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