Revealing the interlayer van der Waals coupling of bi-layer and tri-layer MoS2 using terahertz coherent phonon spectroscopy

Terahertz phonon engineering with van der Waals heterostructures

Phonon engineering at gigahertz frequencies forms the foundation of microwave acoustic filters1, acousto-optic modulators2 and quantum transducers3,4. Terahertz phonon engineering could lead to acoustic filters and modulators at higher bandwidth and speed, as well as quantum circuits operating at higher temperatures. Despite their potential, methods for engineering terahertz phonons have been limited due to the challenges of achieving the required material control at subnanometre precision and efficient phonon coupling at terahertz frequencies. Here we demonstrate the efficient generation, detection and manipulation of terahertz phonons through precise integration of atomically thin layers in van der Waals heterostructures. We used few-layer graphene as an ultrabroadband phonon transducer that converts femtosecond near-infrared pulses to acoustic-phonon pulses with spectral content up to 3 THz. A monolayer WSe2 is used as a sensor. The high-fidelity readout was enabled by the exciton-phonon coupling and strong light-matter interactions. By combining these capabilities in a single heterostructure and detecting responses to incident mechanical waves, we performed terahertz phononic spectroscopy. Using this platform, we demonstrate high-Q terahertz phononic cavities and show that a WSe2 monolayer embedded in hexagonal boron nitride can efficiently block the transmission of terahertz phonons. By comparing our measurements to a nanomechanical model, we obtained the force constants at the heterointerfaces. Our results could enable terahertz phononic metamaterials for ultrabroadband acoustic filters and modulators and could open new routes for thermal engineering.

Fluctuotaxis: Nanoscale directional motion away from regions of fluctuation

Regulating the motion of nanoscale objects on a solid surface is vital for a broad range of technologies such as nanotechnology, biotechnology, and mechanotechnology. In spite of impressive advances achieved in the field, there is still a lack of a robust mechanism which can operate under a wide range of situations and in a controllable manner. Here, we report a mechanism capable of controllably driving directed motion of any nanoobjects (e.g., nanoparticles, biomolecules, etc.) in both solid and liquid forms. We show via molecular dynamics simulations that a nanoobject would move preferentially away from the fluctuating region of an underlying substrate, a phenomenon termed fluctuotaxis-for which the driving force originates from the difference in atomic fluctuations of the substrate behind and ahead of the object. In particular, we find that the driving force can depend quadratically on both the amplitude and frequency of the substrate and can thus be tuned flexibly. The proposed driving mechanism provides a robust and controllable way for nanoscale mass delivery and has potential in various applications including nanomotors, molecular machines, etc.

Temporally probing the thermal phonon and charge transfer induced out-of-plane acoustical displacement of monolayer and bi-layer MoS2/GaN heterojunction

Acoustical behavior of semiconducting transition metal dichalcogenides determines the heat transfer pathway, and thus plays a crucial role in the electronics and optoelectronics design. In this research, van der Waals heterojunctions (vdWHs) consisting of transferred monolayer and bi-layer MoS₂ on GaN substrate were studied. We observed an asymmetric bipolar acoustic strain wave with ∼5 ps duration, which describes the surface of substrate undergoing strong compressive deformation after weak tensile deformation in the out-of-plane direction. We developed a theory to explain the mechanisms responsible for the observed strain waveform in the vdWHs elastic system, and obtained the critical parameters of the carrier dynamics by temporal fitting. Our results not only report a coherent acoustic phonon generated in the vdWHs, which will complement our understanding of the thermal transfer at the 2D/substrate interface, but also provide information about the intrinsic properties in the vdWHs, which would benefit the design of the 2D-based devices in the future.