Anionic and cationic substitution in ZnO

Emerging aspects of metal ions-doped zinc oxide photocatalysts in degradation of organic dyes and pharmaceutical pollutants - A review

In recent periods, a broad assortment of continual organic contaminants has been released into our natural water resources. Indeed, it is exceedingly poisonous and perilous to living things; thus, the elimination of these organic pollutants before release into the water bodies is vital. A variety of techniques have been utilized to remove these organic pollutants with advanced oxidation photocatalytic methods with zinc oxide (ZnO) nanoparticles being commonly used as a capable catalyst for contaminated water treatment. Nevertheless, its broad energy gap, which can be only stimulated under an ultraviolet (UV) light source, and high recombination pairs of electrons and holes limit their photocatalytic behaviors. However, numerous methods have been suggested to decrease its energy gap for visible regions. Including, the doping ZnO with metal ions (dopant) can be considered as an effectual route not only the reason for a movement of the absorption edges toward the higher (visible light) region but also to lower the electron-hole pair (e--h+) recombination. This review concentrated on the impact of dissimilar types of metal ions (dopants) on the advancement in the degradation performance of ZnO. So, this work demonstrates a vital review of contemporary attainments in the alteration of ZnO nanoparticles for organic pollutants eliminations. Besides, the effect of doping ions including transition metals, rare earth metals, and metal ions (substitutional and interstitial) concerning numerous types of altered ZnO are summarized. The photodegradation mechanisms for pristine and metal-modified ZnO nanoparticles are also conferred.

Effects of Dopants and Processing Parameters on the Properties of ZnO-V2O5-Based Varistors Prepared by Powder Metallurgy: A Review

This article reviews the progress in developing ZnO-V₂O₅-based metal oxide varistors (MOVs) using powder metallurgy (PM) techniques. The aim is to create new, advanced ceramic materials for MOVs with comparable or superior functional properties to ZnO-Bi₂O₃ varistors using fewer dopants. The survey emphasizes the importance of a homogeneous microstructure and desirable varistor properties, such as high nonlinearity (α), low leakage current density (J_L), high energy absorption capability, reduced power loss, and stability for reliable MOVs. This study investigates the effect of V₂O₅ and MO additives on the microstructure, electrical and dielectric properties, and aging behavior of ZnO-based varistors. The findings show that MOVs with 0.25-2 mol.% V₂O₅ and MO additives sintered in air over 800 °C contain a primary phase of ZnO with a hexagonal wurtzite structure and several secondary phases that impact the MOV performance. The MO additives, such as Bi₂O₃, In₂O₃, Sb₂O₃, transition element oxides, and rare earth oxides, act as ZnO grain growth inhibitors and enhance the density, microstructure homogeneity, and nonlinearity. Refinement of the microstructure of MOVs and consolidation under appropriate PM conditions improve their electrical properties (J_L ≤ 0.2 mA/cm², α of 22-153) and stability. The review recommends further developing and investigating large-sized MOVs from the ZnO-V₂O₅ systems using these techniques.

Study on the Performance of Oxygen-Rich Zn(O,S) Buffers Fabricated by Sputtering Deposition and Zn(O,S)/Cu(In,Ga)(S,Se)2 Interfaces

We developed a novel process for fabricating oxygen-rich Zn(O,S) buffer layers by magnetron reactive sputtering with a single oxygen-rich Zn(O,S) target, suitable for industrial all-dry production. Then, we successfully fabricated Cd-free Cu(In,Ga)(S,Se)₂ (CIGSSe) solar cells. By varying the oxygen partial pressure during sputtering from 0 to 20%, we precisely controlled the Zn(O,S) composition, then systematically investigated its effects on the quality of oxygen-rich Zn(O,S) films, the properties of formed p-n junctions, and the performance of CIGSSe solar cells with Zn(O,S) buffer. We demonstrated that reactive sputtering with a Zn(O,S) target can generate a homogeneous, high-quality oxygen-rich Zn(O,S) buffer on large-area substrates. We observed a unique and unusual phenomenon: the appropriate content of secondary phase ZnSO₄ and ZnSO₃ improved the band alignment for oxygen-rich Zn(O,S). Combining our proposed schematic diagram of band alignmentat the Zn(O,S)/CIGSSe interface, we established a crucial correlation between the device performance and the interfacial properties at the p-n junction. For the CIGSSe device performance, the band alignment matching at the heterojunction plays a primary role, and the quality of oxygen-rich Zn(O,S) films plays a secondary role. Consequently, an excellent oxygen-rich Zn(O,S) buffer can be obtained with 10% Zn(O,S) deposition oxygen partial pressure , and the optimized device shows a higher V_oc (447 mV) and a similar conversion efficiency (11.2%) than conventional CIGSSe devices with CdS buffer.

Synthesis and characterization of novel zinc precursors for ZnO thin film deposition by atomic layer deposition

A novel series of zinc complexes, [EtZn(dab)]2 (1), [EtZn(damb)]2 (2), [EtZn(damp)]2 (3), and [EtZn(dadb)]2 (4), were prepared via single-step substitution. Further, these were analyzed by nuclear magnetic resonance (NMR), Fourier transform infrared spectroscopy (FT-IR), elemental analysis, single crystal X-ray diffraction analysis, and thermogravimetric analysis (TGA). The X-ray crystallography analysis revealed that all complexes exist as dimeric structures with distorted tetrahedral geometry having zinc centers that are interconnected via μ2-O bonding of the aminoalkoxy oxygen atom. TGA and thermal analysis of the complexes showed high volatilities and stabilities at sublimation temperatures of 70, 95, 90, and 105 °C at 0.5 Torr for the respective compounds. Precursor 3 was successfully used for ZnO thin film deposition by ALD. A growth rate per cycle (GPC) of 0.125 nm per cycle was obtained at 200 °C and XPS analysis confirmed the growth of highly pure ZnO films without carbon and nitrogen impurities, while XRD analysis revealed the deposition of reasonably crystalline films. Additionally, the high transmittance and wide bandgap of the films are suitable for optoelectronic applications.

Assessment of structural, optical and conduction properties of ZnO thin films in the presence of acceptor impurities

The structural, optical and electrical conduction properties of (Li/Cu,N):ZnO codoped thin films synthesized by the sol-gel method were investigated by field emission scanning electron microscopy (FESEM), x-ray diffraction (XRD), transmission and absorption, photoluminescence (PL) and I-V measurements in order to bring evidence of the formation of acceptor centers by dual-acceptor codoping processes. The (Li 3%,N 5%):ZnO films consist of crystallites with average size of 15 nm, show 95% transmission in the visible region, and an optical band gap of 3.22 eV. The PL spectra show emission maxima at 3.21 and 2.96 eV which are related to the emission of acceptor centers and the presence of defects, respectively. Li occupies interstitial sites and may form Lii-N(O) defect complexes that act as acceptor centers. The (Cu 3%,N 5%):ZnO films consist of crystallites with average size of 12 nm, and exhibit 90% transmission in the visible region. The PL spectra reveal band edge emission at 3.23 eV and defect related emission at 2.74 eV. In the (Cu,N) codoped films, copper substitutes zinc and adopts mainly the Cu(1+) state. A possible defect complex involving Cu and N determines the transition from n- to p-type conductivity. These findings are in agreement with results of electronic structure calculations at the GGA-PBE level.

Nanoparticle shape anisotropy and photoluminescence properties: Europium containing ZnO as a Model Case

The precise control over electronic and optical properties of semiconductor (SC) materials is pivotal for a number of important applications like in optoelectronics, photocatalysis or in medicine. It is well known that the incorporation of heteroelements (doping as a classical case) is a powerful method for adjusting and enhancing the functionality of semiconductors. Independent from that, there already has been a tremendous progress regarding the synthesis of differently sized and shaped SC nanoparticles, and quantum-size effects are well documented experimentally and theoretically. Whereas size and shape control of nanoparticles work fairly well for the pure compounds, the presence of a heteroelement is problematic because the impurities interfere strongly with bottom up approaches applied for the synthesis of such particles, and effects are even stronger, when the heteroelement is aimed to be incorporated into the target lattice for chemical doping. Therefore, realizing coincident shape control of nanoparticle colloids and their doping still pose major difficulties. Due to a special mechanism of the emulsion based synthesis method presented here, involving a gelation of emulsion droplets prior to crystallization of shape-anisotropic ZnO nanoparticles, heteroelements can be effectively entrapped inside the lattice. Different nanocrystal shapes such as nanorods, -prisms, -plates, and -spheres can be obtained, determined by the use of certain emulsification agents. The degree of morphologic alterations depends on the type of incorporated heteroelement M(n+), concentration, and it seems that some shapes are more tolerant against doping than others. Focus was then set on the incorporation of Eu(3+) inside the ZnO particles, and it was shown that nanocrystal shape and aspect ratios could be adjusted while maintaining a fixed dopant level. Special PL properties could be observed implying energy transfer from ZnO excited near its band-gap (3.3 eV) to the Eu(3+) states mediated by defect luminescence of the nanoparticles. Indications for an influence of shape on photoluminescence (PL) properties were found. Finally, rod-like Eu@ZnO colloids were used as tracers to investigate their uptake into biological samples like HeLa cells. The PL was sufficient for identifying green and red emission under visible light excitation.

Photovoltaic Performance and Interface Behaviors of Cu(In,Ga)Se2 Solar Cells with a Sputtered-Zn(O,S) Buffer Layer by High-Temperature Annealing

We selected a sputtered-Zn(O,S) film as a buffer material and fabricated a Cu(In,Ga)Se2 (CIGS) solar cell for use in monolithic tandem solar cells. A thermally stable buffer layer was required because it should withstand heat treatment during processing of top cell. Postannealing treatment was performed on a CIGS solar cell in vacuum at temperatures from 300-500 °C to examine its thermal stability. Serious device degradation particularly in VOC was observed, which was due to the diffusion of thermally activated constituent elements. The elements In and Ga tend to out-diffuse to the top surface of the CIGS, while Zn diffuses into the interface of Zn(O,S)/CIGS. Such rearrangement of atomic fractions modifies the local energy band gap and band alignment at the interface. The notch-shape induced at the interface after postannealing could function as an electrical trap during electron transport, which would result in the reduction of solar cell efficiency.

Energy band alignment in chalcogenide thin film solar cells from photoelectron spectroscopy

Energy band alignment plays an important role in thin film solar cells. This article presents an overview of the energy band alignment in chalcogenide thin film solar cells with a particular focus on the commercially available material systems CdTe and Cu(In,Ga)Se2. Experimental results from two decades of photoelectron spectroscopy experiments are compared with density functional theory calculations taken from literature. It is found that the experimentally determined energy band alignment is in good agreement with theoretical predictions for many interfaces. These alignments, in particular the theoretically predicted alignments, can therefore be considered as the intrinsic or natural alignments for a given material combination. The good agreement between experiment and theory enables a detailed discussion of the interfacial composition of Cu(In,Ga)Se2/CdS interfaces in terms of the contribution of ordered vacancy compounds to the alignment of the energy bands. It is furthermore shown that the most important interfaces in chalcogenide thin film solar cells, those between Cu(In,Ga)Se2 and CdS and between CdS and CdTe are quite insensitive to the processing of the layers. There are plenty of examples where a significant deviation between experimentally-determined band alignment and theoretical predictions are evident. In such cases a variation of band alignment of sometimes more than 1 eV depending on interface preparation can be obtained. This variation can lead to a significant deterioration of device properties. It is suggested that these modifications are related to the presence of high defect concentrations in the materials forming the contact. The particular defect chemistry of chalcogenide semiconductors, which is related to the ionicity of the chemical bond in these materials and which can be beneficial for material and device properties, can therefore cause significant device limitations, as e.g. in the case of the CuInS2 thin film solar cells or for new chalcogenide absorber materials.

"Dirty nanostructures": aerosol-assisted synthesis of temperature stable mesoporous metal oxide semiconductor spheres comprising hierarchically assembled zinc oxide nanocrystals controlled via impurities

Structural disintegration or the loss of accessible surfaces of functional nanostructures due to processes involving mass transport (e.g. sintering) is a serious problem for any application of these materials at elevated temperatures, like in heterogeneous catalysis or chemical sensing. Phases with low sintering temperatures, e.g. some metals or metal oxides like zinc oxide (ZnO), are very sensitive in this respect. Therefore, it is not only relevant to prepare important materials with refined morphologies, but the desired features need to be stable under real conditions. In this study, we describe the preparation of mesoporous ZnO nano-/microspheres by means of a template-assisted aerosol technique. Furthermore, by intentional introduction of impurity elements as dopants, specific surface areas and porosities of the prepared materials can be increased significantly. The impurities also strongly improve the thermal stability of the described ZnO nanostructures against thermal sintering. Although the pure ZnO material suffers from a complete loss of porosity, the structures of the impure ("dirty") materials change only negligibly. Even at 500 °C morphology and porosity are preserved. The latter advantageous property was used for testing the novel nanocatalysts in heterogeneous catalysis.

Oxide Thin Film Heterostructures on Large Area, with Flexible Doping, Low Dislocation Density, and Abrupt Interfaces: Grown by Pulsed Laser Deposition

Advanced Pulsed Laser Deposition (PLD) processes allow the growth of oxide thin film heterostructures on large area substrates up to 4-inch diameter, with flexible and controlled doping, low dislocation density, and abrupt interfaces. These PLD processes are discussed and their capabilities demonstrated using selected results of structural, electrical, and optical characterization of superconducting (YBa2Cu3O7−δ), semiconducting (ZnO-based), and ferroelectric (BaTiO3-based) and dielectric (wide-gap oxide) thin films and multilayers. Regarding the homogeneity on large area of structure and electrical properties, flexibility of doping, and state-of-the-art electronic and optical performance, the comparably simple PLD processes are now advantageous or at least fully competitive to Metal Organic Chemical Vapor Deposition or Molecular Beam Epitaxy. In particular, the high flexibility connected with high film quality makes PLD a more and more widespread growth technique in oxide research.