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Boldyreva AG, Novikov AV, Petrov VG, Zhivchikova AN, Tepliakova MM, Stevenson KJ. Gamma-ray dose threshold for MAPbI 3 solar cells. Phys Chem Chem Phys 2024; 26:12372-12378. [PMID: 38619368 DOI: 10.1039/d4cp00524d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/16/2024]
Abstract
In this work, we report on the effects observed in MAPbI3 polycrystalline films and solar cells under moderate gamma-ray doses of 3-21 kGy. We applied several instrumental techniques such as photoluminescence spectroscopy, time-resolved photoluminescence, Suns-VOC measurement, and impedance spectroscopy to characterize exposed samples. We observed a nonlinear dependency of such characteristics as PL intensity, career lifetime, ideality factor, and recombination resistance on the exposure dose. Small doses of 3-5 kGy annihilate some of the defect centers in the material, which results in improved carrier extraction and prolonged carrier lifetime, while with larger doses of 10 kGy and above, nonradiative recombination becomes predominant. In this way, we revealed a gamma-ray threshold for MAPbI3 films of around 10 kGy, above which it is not recommended to exploit this material. In space environment, yearly doses rarely exhibit 0.1 kGy (10 krad), and the MAPbI3 material has a sufficient margin of safety for space applications. Moreover, this unusual behaviour opens up the opportunity to use gamma-ray sources as an effective method to improve the quality of defective polycrystalline perovskite films before actual exploitation in an ionizing radiation-free environment.
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Affiliation(s)
- A G Boldyreva
- Skolkovo Institute of Science and Technology, Nobel Street 3, Moscow 143026, Russia.
| | - A V Novikov
- Skolkovo Institute of Science and Technology, Nobel Street 3, Moscow 143026, Russia.
| | - V G Petrov
- Lomonosov Moscow State University, Department of Chemistry, Leninskie Gory 1 bld. 3, Moscow 119991, Russia
| | - A N Zhivchikova
- Skolkovo Institute of Science and Technology, Nobel Street 3, Moscow 143026, Russia.
| | - M M Tepliakova
- Skolkovo Institute of Science and Technology, Nobel Street 3, Moscow 143026, Russia.
| | - K J Stevenson
- Lomonosov Moscow State University, Department of Chemistry, Leninskie Gory 1 bld. 3, Moscow 119991, Russia
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2
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Wang C, Qu D, Zhou B, Shang C, Zhang X, Tu Y, Huang W. Self-Healing Behavior of the Metal Halide Perovskites and Photovoltaics. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2307645. [PMID: 37770384 DOI: 10.1002/smll.202307645] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/01/2023] [Indexed: 09/30/2023]
Abstract
Perovskite solar cells have achieved rapid progress in the new-generation photovoltaic field, but the commercialization lags behind owing to the device stability issue under operational conditions. Ultimately, the instability issue is attributed to the soft lattice of ionic perovskite crystal. In brief, metal halide perovskite materials are susceptible to structural instability processes, including phase segregation, component loss, lattice distortion, and fatigue failure under harsh external stimuli such as high humidity, strong irradiation, wide thermal cycles, and large stress. Developing self-healing perovskites to further improve the unsatisfactory operational stability of their photoelectric devices under harsh stimuli has become a cutting-edge hotspot in this field. This self-healing behavior needs to be studied more comprehensively. Therefore, the self-healing behavior of the metal halide perovskites and photovoltaics is classified and summarized in this review. By discussing recent advances, underlying mechanisms, strategies, and existing challenges, this review provides perspectives on self-healing of perovskite solar cells in the future.
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Affiliation(s)
- Chenyun Wang
- Frontiers Science Center for Flexible Electronics (FSCFE), Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials and Engineering (IBME), Northwestern Polytechnical University, Xi'an, Shaanxi, 710072, China
| | - Du Qu
- Frontiers Science Center for Flexible Electronics (FSCFE), Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials and Engineering (IBME), Northwestern Polytechnical University, Xi'an, Shaanxi, 710072, China
| | - Bin Zhou
- Frontiers Science Center for Flexible Electronics (FSCFE), Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials and Engineering (IBME), Northwestern Polytechnical University, Xi'an, Shaanxi, 710072, China
| | - Chuanzhen Shang
- Frontiers Science Center for Flexible Electronics (FSCFE), Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials and Engineering (IBME), Northwestern Polytechnical University, Xi'an, Shaanxi, 710072, China
| | - Xinyue Zhang
- Frontiers Science Center for Flexible Electronics (FSCFE), Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials and Engineering (IBME), Northwestern Polytechnical University, Xi'an, Shaanxi, 710072, China
| | - Yongguang Tu
- Frontiers Science Center for Flexible Electronics (FSCFE), Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials and Engineering (IBME), Northwestern Polytechnical University, Xi'an, Shaanxi, 710072, China
- Key laboratory of Flexible Electronics of Zhejiang Provience, Ningbo Institute of Northwestern Polytechnical University, 218 Qingyi Road, Ningbo, 315103, China
| | - Wei Huang
- Frontiers Science Center for Flexible Electronics (FSCFE), Xi'an Institute of Flexible Electronics (IFE) and Xi'an Institute of Biomedical Materials and Engineering (IBME), Northwestern Polytechnical University, Xi'an, Shaanxi, 710072, China
- Key Laboratory of Flexible Electronics (KLoFE) and Institution of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University, Nanjing, Jiangsu, 211816, China
- Key Laboratory for Organic Electronics and Information Displays (KLOEID) and Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunications, Nanjing, Jiangsu, 210023, China
- Key laboratory of Flexible Electronics of Zhejiang Provience, Ningbo Institute of Northwestern Polytechnical University, 218 Qingyi Road, Ningbo, 315103, China
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3
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Dudipala KR, Le T, Nie W, Hoye RLZ. Halide Perovskites and Their Derivatives for Efficient, High-Resolution Direct Radiation Detection: Design Strategies and Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2304523. [PMID: 37726105 PMCID: PMC11475525 DOI: 10.1002/adma.202304523] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/13/2023] [Revised: 09/03/2023] [Indexed: 09/21/2023]
Abstract
The past decade has witnessed a rapid rise in the performance of optoelectronic devices based on lead-halide perovskites (LHPs). The large mobility-lifetime products and defect tolerance of these materials, essential for optoelectronics, also make them well-suited for radiation detectors, especially given the heavy elements present, which is essential for strong X-ray and γ-ray attenuation. Over the past decade, LHP thick films, wafers, and single crystals have given rise to direct radiation detectors that have outperformed incumbent technologies in terms of sensitivity (reported values up to 3.5 × 106 µC Gyair -1 cm-2 ), limit of detection (directly measured values down to 1.5 nGyair s-1 ), along with competitive energy and imaging resolution at room temperature. At the same time, lead-free perovskite-inspired materials (e.g., methylammonium bismuth iodide), which have underperformed in solar cells, have recently matched and, in some areas (e.g., in polarization stability), surpassed the performance of LHP detectors. These advances open up opportunities to achieve devices for safer medical imaging, as well as more effective non-invasive analysis for security, nuclear safety, or product inspection applications. Herein, the principles behind the rapid rises in performance of LHP and perovskite-inspired material detectors, and how their properties and performance link with critical applications in non-invasive diagnostics are discussed. The key strategies to engineer the performance of these materials, and the important challenges to overcome to commercialize these new technologies are also discussed.
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Affiliation(s)
| | - Thanh‐Hai Le
- Center for Integrated NanotechnologiesLos Alamos National LaboratoryLos AlamosNM87545USA
| | - Wanyi Nie
- Center for Integrated NanotechnologiesLos Alamos National LaboratoryLos AlamosNM87545USA
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Ozerova VV, Emelianov NA, Kiryukhin DP, Kushch PP, Shilov GV, Kichigina GA, Aldoshin SM, Frolova LA, Troshin PA. Exploring the Limits: Degradation Behavior of Lead Halide Perovskite Films under Exposure to Ultrahigh Doses of γ Rays of Up to 10 MGy. J Phys Chem Lett 2023; 14:743-749. [PMID: 36651858 DOI: 10.1021/acs.jpclett.2c03763] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Herein, we show that thin films of MAPbI3, FAPbI3, (CsMA)PbI3, and (CsMAFA)PbI3, where MA and FA are methylammonium and formamidinium cations, respectively, tolerate ultrahigh doses of γ rays approaching 10 MGy without significant changes in their absorption spectra. However, among the studied materials, FAPbI3 was the only one that did not form metallic lead due to its extreme radiation hardness. Infrared near-field optical microscopy revealed the radiation-induced depletion of organic cations from the grains of MAPbI3 and their accumulation at the grain boundaries, whereas FAPbI3 on the contrary lost FA cations from the grain boundaries. The multication (CsMAFA)PbI3 perovskite underwent a facile phase segregation to domains enriched with MA and FA cations, which is a principally new radiation-induced degradation pathway. Our findings suggest that the radiation hardness of the rationally designed perovskite semiconductors could go far beyond the impressive threshold of 10 MGy we set herein for FAPbI3 films, which opens many exciting opportunities for practical implementation of these materials.
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Affiliation(s)
- Victoria V Ozerova
- Federal Research Center for Problems of Chemical Physics and Medicinal Chemistry of the Russian Academy of Sciences (FRC PCP MC RAS), Academician Semenov ave. 1, Chernogolovka, Moscow Region 142432, Russian Federation
| | - Nikita A Emelianov
- Federal Research Center for Problems of Chemical Physics and Medicinal Chemistry of the Russian Academy of Sciences (FRC PCP MC RAS), Academician Semenov ave. 1, Chernogolovka, Moscow Region 142432, Russian Federation
| | - Dmitry P Kiryukhin
- Federal Research Center for Problems of Chemical Physics and Medicinal Chemistry of the Russian Academy of Sciences (FRC PCP MC RAS), Academician Semenov ave. 1, Chernogolovka, Moscow Region 142432, Russian Federation
| | - Pavel P Kushch
- Federal Research Center for Problems of Chemical Physics and Medicinal Chemistry of the Russian Academy of Sciences (FRC PCP MC RAS), Academician Semenov ave. 1, Chernogolovka, Moscow Region 142432, Russian Federation
| | - Gennady V Shilov
- Federal Research Center for Problems of Chemical Physics and Medicinal Chemistry of the Russian Academy of Sciences (FRC PCP MC RAS), Academician Semenov ave. 1, Chernogolovka, Moscow Region 142432, Russian Federation
| | - Galina A Kichigina
- Federal Research Center for Problems of Chemical Physics and Medicinal Chemistry of the Russian Academy of Sciences (FRC PCP MC RAS), Academician Semenov ave. 1, Chernogolovka, Moscow Region 142432, Russian Federation
| | - Sergey M Aldoshin
- Federal Research Center for Problems of Chemical Physics and Medicinal Chemistry of the Russian Academy of Sciences (FRC PCP MC RAS), Academician Semenov ave. 1, Chernogolovka, Moscow Region 142432, Russian Federation
| | - Lyubov A Frolova
- Federal Research Center for Problems of Chemical Physics and Medicinal Chemistry of the Russian Academy of Sciences (FRC PCP MC RAS), Academician Semenov ave. 1, Chernogolovka, Moscow Region 142432, Russian Federation
| | - Pavel A Troshin
- Federal Research Center for Problems of Chemical Physics and Medicinal Chemistry of the Russian Academy of Sciences (FRC PCP MC RAS), Academician Semenov ave. 1, Chernogolovka, Moscow Region 142432, Russian Federation
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Liu C, Chen H, Lin P, Hu H, Meng Q, Xu L, Wang P, Wu X, Cui C. Optimized photoelectric characteristics of MAPbCl 3and MAPbBr 3composite perovskite single crystal heterojunction photodetector. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:405703. [PMID: 35896095 DOI: 10.1088/1361-648x/ac84bc] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/16/2022] [Accepted: 07/27/2022] [Indexed: 06/15/2023]
Abstract
MAPbBr3single crystal (SC) thin layer was successfully grown on MAPbCl3SC substrate to form perovskite SC heterojunction. Planar structure electrodes are deposited by thermal evaporation on the surfaces of MAPbCl3, MAPbBr3, and SCs heterojunction, respectively to evaluate their photoelectric performance. The SC heterojunction device exhibits excellent unidirectional conductivity in the voltage-current curves. Meanwhile, the current-time curves prove that SC heterojunction devices can effectively utilize the advantages of MAPbCl3and MAPbBr3, possessing relatively low dark current (∼300 nA), which is comparable to the dark current of MAPbCl3, but very high photocurrent (∼3500 nA), which is equivalent to the photocurrent of MAPbBr3. Rather than the photocurrent overshot and decay occurring at the exposure of light illumination in the MAPbBr3device, the photocurrent is extremely stable without overshot and decay in the SC heterojunction device. The light-to-dark ratio of the SC heterojunction device is twice that of MAPbCl3device and three times that of MAPbBr3device. Furthermore, the detectivity of the heterojunction device reaches as high as∼7×1011 Jones, an order of magnitude higher than MAPbCl3and MAPbBr3. The excellent characteristics of SC heterojunction further expand the practical application prospect of perovskite materials.
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Affiliation(s)
- Chao Liu
- Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, People's Republic of China
| | - Hang Chen
- Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, People's Republic of China
| | - Ping Lin
- Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, People's Republic of China
| | - Haihua Hu
- Zhejiang University City College, Hangzhou 310018, People's Republic of China
| | - Qingyu Meng
- Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, People's Republic of China
| | - Lingbo Xu
- Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, People's Republic of China
| | - Peng Wang
- Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, People's Republic of China
| | - Xiaoping Wu
- Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, People's Republic of China
| | - Can Cui
- Key Laboratory of Optical Field Manipulation of Zhejiang Province, Department of Physics, Zhejiang Sci-Tech University, Hangzhou 310018, People's Republic of China
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6
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WITHDRAWN: Bulk lead-free perovskite crystal variants for X-ray detection. Radiat Phys Chem Oxf Engl 1993 2022. [DOI: 10.1016/j.radphyschem.2022.110111] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/22/2022]
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7
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Armaroli G, Ferlauto L, Lédée F, Lini M, Ciavatti A, Kovtun A, Borgatti F, Calabrese G, Milita S, Fraboni B, Cavalcoli D. X-Ray-Induced Modification of the Photophysical Properties of MAPbBr 3 Single Crystals. ACS APPLIED MATERIALS & INTERFACES 2021; 13:58301-58308. [PMID: 34851625 PMCID: PMC8678983 DOI: 10.1021/acsami.1c16072] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/26/2021] [Accepted: 11/16/2021] [Indexed: 06/13/2023]
Abstract
Methylammonium lead tribromide (MAPbBr3) perovskite single crystals demonstrate to be excellent direct X-ray and gamma-ray detectors with outstanding sensitivity and low limit of detection. Despite this, thorough studies on the photophysical effects of exposure to high doses of ionizing radiation on this material are still lacking. In this work, we present our findings regarding the effects of controlled X-ray irradiation on the optoelectronic properties of MAPbBr3 single crystals. Irradiation is carried out in air with an imaging X-ray tube, simulating real-life application in a medical facility. By means of surface photovoltage spectroscopy, we find that X-ray exposure quenches free excitons in the material and introduces new bound excitonic species. Despite this drastic effect, the crystals recover after 1 week of storage in dark and low humidity conditions. By means of X-ray photoelectron spectroscopy, we find that the origin of the new bound excitonic species is the formation of bromine vacancies, leading to local changes in the dielectric response of the material. The recovery effect is attributed to vacancy filling by atmospheric oxygen and water.
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Affiliation(s)
- Giovanni Armaroli
- Department
of Physics and Astronomy, University of
Bologna, Viale Berti Pichat 6/2, 40127 Bologna, Italy
| | - Laura Ferlauto
- Department
of Physics and Astronomy, University of
Bologna, Viale Berti Pichat 6/2, 40127 Bologna, Italy
- Interdepartmental
Center for Industrial Research of the University of Bologna (CIRI-MAM), Viale Risorgimento 2, 40136 Bologna, Italy
| | - Ferdinand Lédée
- Department
of Physics and Astronomy, University of
Bologna, Viale Berti Pichat 6/2, 40127 Bologna, Italy
- Interdepartmental
Center for Industrial Research of the University of Bologna (CIRI-MAM), Viale Risorgimento 2, 40136 Bologna, Italy
| | - Matilde Lini
- Department
of Physics and Astronomy, University of
Bologna, Viale Berti Pichat 6/2, 40127 Bologna, Italy
| | - Andrea Ciavatti
- Department
of Physics and Astronomy, University of
Bologna, Viale Berti Pichat 6/2, 40127 Bologna, Italy
| | - Alessandro Kovtun
- Institute
of Organic Synthesis and Photoreactivity—(CNR-ISOF), Via Gobetti 101, 40129 Bologna, Italy
| | - Francesco Borgatti
- Institute
for Nanostructured Material Study (CNR-ISMN), Via Piero Gobetti 101, 40129 Bologna, Italy
| | - Gabriele Calabrese
- Institute
for Microelectronics and Microsystems (CNR-IMM), Via Piero Gobetti 101, 40129 Bologna, Italy
| | - Silvia Milita
- Institute
for Microelectronics and Microsystems (CNR-IMM), Via Piero Gobetti 101, 40129 Bologna, Italy
| | - Beatrice Fraboni
- Department
of Physics and Astronomy, University of
Bologna, Viale Berti Pichat 6/2, 40127 Bologna, Italy
| | - Daniela Cavalcoli
- Department
of Physics and Astronomy, University of
Bologna, Viale Berti Pichat 6/2, 40127 Bologna, Italy
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De Giorgi ML, Milanese S, Klini A, Anni M. Environment-Induced Reversible Modulation of Optical and Electronic Properties of Lead Halide Perovskites and Possible Applications to Sensor Development: A Review. Molecules 2021; 26:705. [PMID: 33572957 PMCID: PMC7866427 DOI: 10.3390/molecules26030705] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/09/2021] [Revised: 01/22/2021] [Accepted: 01/23/2021] [Indexed: 11/30/2022] Open
Abstract
Lead halide perovskites are currently widely investigated as active materials in photonic and optoelectronic devices. While the lack of long term stability actually limits their application to commercial devices, several experiments demonstrated that beyond the irreversible variation of the material properties due to degradation, several possibilities exist to reversibly modulate the perovskite characteristics by acting on the environmental conditions. These results clear the way to possible applications of lead halide perovskites to resistive and optical sensors. In this review we will describe the current state of the art of the comprehension of the environmental effects on the optical and electronic properties of lead halide perovskites, and of the exploitation of these results for the development of perovskite-based sensors.
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Affiliation(s)
- Maria Luisa De Giorgi
- Dipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, Via per Arnesano, 73100 Lecce, Italy; (S.M.); (M.A.)
| | - Stefania Milanese
- Dipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, Via per Arnesano, 73100 Lecce, Italy; (S.M.); (M.A.)
| | - Argyro Klini
- Institute of Electronic Structure and Laser, Foundation for Research and Technology-Hellas, P.O. Box 1385, Heraklion, 71110 Crete, Greece;
| | - Marco Anni
- Dipartimento di Matematica e Fisica “Ennio De Giorgi”, Università del Salento, Via per Arnesano, 73100 Lecce, Italy; (S.M.); (M.A.)
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