DFB laser diodes in the wavelength range from 760 nm to 2.5 microm

Low-threshold 1150 nm single-polarization single-frequency Yb-doped DFB fiber laser

We demonstrate a stable single-polarization single-frequency distributed feedback Bragg (DFB) fiber laser at 1150 nm based on a 5 cm long Yb-doped fiber which, to the best of our knowledge, is the first demonstration of a Yb-doped fiber-based single-frequency laser with a wavelength longer than 1120 nm. The threshold is as low as 10 mW. The measured maximum output power is 10.6 mW, and the spectrum at the highest power shows an excellent optical signal-to-noise ratio of about 70 dB, considering the amplified spontaneous emission in a short wavelength. The polarization extinction ratio is 25 dB, and the spectral linewidth is 20 kHz. This fiber laser is suitable for seeding high-power 1150 nm narrow-linewidth laser amplifiers, which can be used as high brightness pump sources for rare-earth-doped fiber lasers and Raman fiber lasers, or to generate visible radiation in the yellow spectral range, facilitating medical and astronomic applications.

Optically pumped rare-earth-doped Al2O3 distributed-feedback lasers on silicon [Invited]

This paper reviews recent progress in the field of optically pumped rare-earth-doped channel waveguide lasers, with a focus on operation utilizing distributed-feedback resonators on silicon wafers. Rare-earth-doped amorphous aluminum oxide thin films have been deposited onto silicon wafers by RF reactive co-sputtering from metallic Al and rare-earth targets, the spectroscopy and optical gain of Er³⁺, Yb³⁺, Nd³⁺, and Tm³⁺ ions has been investigated, and the near-infrared laser transitions near 1 μm in Yb³⁺, 1.5 μm in Er³⁺, and 2 μm in Tm³⁺ and Ho³⁺ have been demonstrated. Output power between a few μW and hundreds of mW have been achieved in different waveguide geometries, and ultranarrow-linewidth laser operation has been demonstrated.

GaSb-based mid infrared photonic crystal surface emitting lasers

We demonstrated for the first time above room temperature (RT) GaSb-based mid-infrared photonic crystal surface emitting lasers (PCSELs). The lasers, under optical pumping, emitted at λ(lasing)~2.3μm, had a temperature insensitive line width of 0.3nm, and a threshold power density (P(th)) ~0.3KW/cm2 at RT. Type-I InGaAsSb quantum wells were used as the active region, and the photonic crystal, a square lattice, was fabricated on the surface to provide optical feedback for laser operation and light coupling for surface emission. The PCSELs were operated at temperatures up to 350K with a small wavelength shift rate of 0.21 nm/K. The PCSELs with different air hole depth were studied. The effect of the etched depth on the laser performance was also investigated using numerical simulation based on the coupled-wave theory. Both the laser wavelength and the threshold power decrease as the depth of the PC becomes larger. The calculated results agree well with the experimental findings.

Monolithic integration of erbium-doped amplifiers with silicon-on-insulator waveguides

Monolithic integration of Al2O3:Er3+ amplifier technology with passive silicon-on-insulator waveguides is demonstrated. A signal enhancement of >7 dB at 1533 nm wavelength is obtained. The straightforward wafer-scale fabrication process, which includes reactive co-sputtering and subsequent reactive ion etching, allows for parallel integration of multiple amplifier and laser sections with silicon or other photonic circuits on a chip.