A simulation study on the influence of energy migration and relative interaction strengths of homo- and hetero-FRET on the net FRET efficiency

Tuning the optical properties of high quantum-yield g-C3N4 with the inclusion of ZnS via FRET for high electron-hole recombination

Luminescent polymeric graphitic composites have the potential to be efficient energy converters for sophisticated displays and light sources. Thermal condensation is used to synthesize g-C₃N₄-ZnS composites. The XRD, and FTIR analyses confirmed the synthesis of the pure host, filler, and composites. FESEM, and TEM images revealed that the ZnS nanosheets were evenly distributed over the g-C₃N₄ sheets. As a result of ZnS incorporation, the melting point of g-C₃N₄ has been raised to 748.5 °C, and the thermal stability of gZ has been increased by 27 %. The optimized gZ15 band gap is determined to be 2.98 eV with a crystallite size of 4.2 nm and a micro stain of 35.42 × 10^-3. With a purity of 63.4 %, gZ15 demonstrated a significant rate of recombination in the blue region. gZ15 has a high PLQY of 98 % and a FRET efficiency of 92%. All of the improved properties demonstrated that polymeric g-C₃N₄-ZnS was the optimum materials for usage in the active or emissive layer of optoelectronic devices.