Metallic interface induced by electronic reconstruction in crystalline-amorphous bilayer oxide films

Nested order-disorder framework containing a crystalline matrix with self-filled amorphous-like innards

Solids can be generally categorized by their structures into crystalline and amorphous states with different interactions among atoms dictating their properties. Crystalline-amorphous hybrid structures, combining the advantages of both ordered and disordered components, present a promising opportunity to design materials with emergent collective properties. Hybridization of crystalline and amorphous structures at the sublattice level with long-range periodicity has been rarely observed. Here, we report a nested order-disorder framework (NOF) constructed by a crystalline matrix with self-filled amorphous-like innards that is obtained by using pressure to regulate the bonding hierarchy of Cu₁₂Sb₄S₁₃. Combined in situ experimental and computational methods demonstrate the formation of disordered Cu sublattice which is embedded in the retained crystalline Cu framework. Such a NOF structure gives a low thermal conductivity (~0.24 W·m⁻¹·K⁻¹) and a metallic electrical conductivity (8 × 10⁻⁶ Ω·m), realizing the collaborative improvement of two competing physical properties. These findings demonstrate a category of solid-state materials to link the crystalline and amorphous forms in the sublattice-scale, which will exhibit extraordinary properties.

The synthesis and characterization of new crystalline-amorphous hybrid materials is challenging. Here, the authors report the preparation of a nested order-disorder framework by applying high pressure to a nested copper chalcogenide Cu₁₂Sb₄S₁₃.

Adhesion of thin metallic layers on Au surfaces

We carried out first-principles density-functional theory calculations to study the work of separation for five different metal-metal interfaces, each of them comprising thin layers of selected metals (Cr, W, Ta, Al or Ti) lying on top of Au surfaces. We found that the highest work of separation is obtained for one-atom-thick layers. Increasing the number of atomic layers leads the work of separation to oscillate with the thickness, and ultimately tend to a limiting value for a large number of layers. Interestingly, for most cases the lowest work of separation is obtained for two-atom layers. We find that this behaviour is mirrored by the quantity of charge transferred between the two metals on the one hand, and their spatial distance on the other.