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Jiang S, Hou F, Zeng S, Zhang Y, Zhao E, Sun Y, Zhao L, Zhang C, Jia M, Dai JF, Huang M, Zhang Q, Zou X, Zhang Y, Lin J. An emerging quaternary semiconductor nanoribbon with gate-tunable anisotropic conductance. Sci Bull (Beijing) 2024:S2095-9273(24)00505-X. [PMID: 39084926 DOI: 10.1016/j.scib.2024.07.025] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 02/29/2024] [Revised: 06/01/2024] [Accepted: 07/02/2024] [Indexed: 08/02/2024]
Abstract
Two-dimensional noble transition metal chalcogenide (NTMC) semiconductors represent compelling building blocks for fabricating flexible electronic and optoelectronic devices. While binary and ternary compounds have been reported, the existence of quaternary NTMCs with a greater elemental degree of freedom remains largely unexplored. This study presents the pioneering experimental realization of a novel semiconducting quaternary NTMC material, AuPdNaS2, synthesized directly on Au foils through chemical vapor deposition. The ribbon-shaped morphology of the AuPdNaS2 crystal can be finely tuned to a thickness as low as 9.2 nm. Scanning transmission electron microscopy reveals the atomic arrangement, showcasing robust anisotropic features; thus, AuPdNaS2 exhibits distinct anisotropic phonon vibrations and electrical properties. The field-effect transistor constructed from AuPdNaS2 crystal demonstrates a pronounced anisotropic conductance (σmax/σmin = 3.20) under gate voltage control. This investigation significantly expands the repertoire of NTMC materials and underscores the potential applications of AuPdNaS2 in nano-electronic devices.
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Affiliation(s)
- Shaolong Jiang
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China; Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong), Shenzhen 518045, China
| | - Fuchen Hou
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China; Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong), Shenzhen 518045, China
| | - Shengfeng Zeng
- Shenzhen Geim Graphene Center, Institue of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China
| | - Yubo Zhang
- Minjiang Collaborative Center for Theoretical Physics, College of Physics and Electronic Information Engineering, Minjiang University, Fuzhou 350108, China
| | - Erding Zhao
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Yilin Sun
- School of Integrated Circuits and Electronics, Beijing Institute of Technology, Beijing 100081, China.
| | - Liyun Zhao
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Cheng Zhang
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Mengyuan Jia
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Jun-Feng Dai
- Shenzhen Institute for Quantum Science and Engineering, Southern University of Science and Technology, Shenzhen 518055, China
| | - Mingyuan Huang
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China
| | - Qing Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Xiaolong Zou
- Shenzhen Geim Graphene Center, Institue of Materials Research, Tsinghua Shenzhen International Graduate School, Tsinghua University, Shenzhen 518055, China.
| | - Yanfeng Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, China.
| | - Junhao Lin
- Department of Physics, Southern University of Science and Technology, Shenzhen 518055, China; Quantum Science Center of Guangdong-Hong Kong-Macao Greater Bay Area (Guangdong), Shenzhen 518045, China.
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Yoon SO, Jeon J, Choi KH, Jeong BJ, Chae S, Kim BJ, Oh S, Woo C, Lee B, Cho S, Kim TY, Jang HE, Ahn J, Dong X, Ghulam A, Park JH, Lee JH, Yu HK, Choi JY. High Breakdown Current Density in Quasi-1D van der Waals Layered Material Ta 2NiSe 7. ACS APPLIED MATERIALS & INTERFACES 2021; 13:52871-52879. [PMID: 34702025 DOI: 10.1021/acsami.1c14335] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
We synthesized ternary composition chalcogenide Ta2NiSe7, a quasi-one-dimensional (Q1D) material with excellent crystallinity. To utilize the excellent electrical conductivity property of Ta2NiSe7, the breakdown current density (JBD) according to thickness change through mechanical exfoliation was measured. It was confirmed that as the thickness decreased, the maximum breakdown voltage (VBD) increased, and at 18 nm thickness, 35 MA cm-2 of JBD was measured, which was 35 times higher than that of copper, which is commonly used as an interconnect material. By optimization of the exfoliation process, it is expected that through a theoretical model fitting, the JBD can be increased to about 356 MA cm-2. It is expected that the low-dimensional materials with ternary compositions proposed through this experiment can be used as candidates for current-carrying materials that are required for the miniaturization of various electronic devices.
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Affiliation(s)
- Sang Ok Yoon
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jiho Jeon
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Kyung Hwan Choi
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Byung Joo Jeong
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Sudong Chae
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Bum Jun Kim
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Seungbae Oh
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Chaeheon Woo
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Bom Lee
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Sooheon Cho
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Tae Yeong Kim
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Han Eol Jang
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jungyoon Ahn
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Xue Dong
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Asghar Ghulam
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jae-Hyuk Park
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Jae-Hyun Lee
- Department of Materials Science and Engineering & Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
| | - Hak Ki Yu
- Department of Materials Science and Engineering & Department of Energy Systems Research, Ajou University, Suwon 16499, Republic of Korea
| | - Jae-Young Choi
- School of Advanced Materials Science & Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea
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3
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Kuklin AV, Gao L, Zhang H, Ågren H. Two-Dimensional Gold Halides: Novel Semiconductors with Giant Spin-Orbit Splitting and Tunable Optoelectronic Properties. J Phys Chem Lett 2020; 11:9759-9765. [PMID: 33142056 DOI: 10.1021/acs.jpclett.0c02788] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
We introduce a new family of 2D materials with unique structure and optoelectronic properties, namely, single-layer gold(I) halides (AuHals). We propose their stability as well as structural, electronic, and optical properties using first-principles calculations. The cleavage energy is found to be similar to that of graphene from graphite, indicating the possibility for mechanical exfoliation. We show that AuHals are stable and have tunable direct (AuBr) and indirect (AuI) band gaps depending on the number of layers. We discuss the possible origin of the giant spin-orbit coupling (SOC) induced conduction band splitting in terms of orbital-decomposed band structure to guide future investigations on the design of materials with highly effective SOC. Exceptionally high excitonic binding energy, high hole mobility, and tunable band gaps indicate that AuHals are promising candidates for optoelectronic devices with excellent performance.
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Affiliation(s)
- Artem V Kuklin
- Division of Science and Innovations, Siberian Federal University, 79 Svobodny pr., Krasnoyarsk 660041, Russia
- Department of Physics and Astronomy, Uppsala University, Box 516, SE-751 20 Uppsala, Sweden
| | - Lingfeng Gao
- Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, P. R. China
| | - Han Zhang
- Institute of Microscale Optoelectronics, Collaborative Innovation Centre for Optoelectronic Science & Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Physics and Optoelectronic Engineering, Shenzhen Key Laboratory of Micro-Nano Photonic Information Technology, Guangdong Laboratory of Artificial Intelligence and Digital Economy (SZ), Shenzhen University, Shenzhen 518060, P. R. China
| | - Hans Ågren
- Department of Physics and Astronomy, Uppsala University, Box 516, SE-751 20 Uppsala, Sweden
- College of Chemistry and Chemical Engineering, Henan University, Kaifeng, Henan 475004, P. R. China
- Tomsk State University, 36 Lenin Avenue, Tomsk, Russia
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Qin JK, Zhou F, Wang J, Chen J, Wang C, Guo X, Zhao S, Pei Y, Zhen L, Ye PD, Lau SP, Zhu Y, Xu CY, Chai Y. Anisotropic Signal Processing with Trigonal Selenium Nanosheet Synaptic Transistors. ACS NANO 2020; 14:10018-10026. [PMID: 32806043 DOI: 10.1021/acsnano.0c03124] [Citation(s) in RCA: 20] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Hardware implementation of an artificial neural network requires neuromorphic devices to process information with low energy consumption and high heterogeneity. Here we demonstrate an electrolyte-gated synaptic transistor (EGT) based on a trigonal selenium (t-Se) nanosheet. Due to the intrinsic low conductivity of the Se channel, the t-Se synaptic transistor exhibits ultralow energy consumption, less than 0.1 pJ per spike. More importantly, the intrinsic low symmetry of t-Se offers a strong anisotropy along its c- and a-axis in electrical conductance with a ratio of up to 8.6. The multiterminal EGT device exhibits an anisotropic response of filtering behavior to the same external stimulus, which enables it to mimic the heterogeneous signal transmission process of the axon-multisynapse biostructure in the human brain. The proof-of-concept device in this work represents an important step to develop neuromorphic electronics for processing complex signals.
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Affiliation(s)
- Jing-Kai Qin
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong 999077, People's Republic of China
- School of Materials Science and Engineering, Harbin Institute of Technology (Shen Zhen), Shen Zhen 518055, People's Republic of China
| | - Feichi Zhou
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong 999077, People's Republic of China
| | - Jingli Wang
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong 999077, People's Republic of China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518055, People's Republic of China
| | - Jiewei Chen
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong 999077, People's Republic of China
| | - Cong Wang
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong 999077, People's Republic of China
| | - Xuyun Guo
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong 999077, People's Republic of China
| | - Shouxin Zhao
- School of Materials Science and Engineering, Harbin Institute of Technology (Shen Zhen), Shen Zhen 518055, People's Republic of China
| | - Yi Pei
- School of Materials Science and Engineering, Harbin Institute of Technology (Shen Zhen), Shen Zhen 518055, People's Republic of China
| | - Liang Zhen
- School of Materials Science and Engineering, Harbin Institute of Technology (Shen Zhen), Shen Zhen 518055, People's Republic of China
| | - Peide D Ye
- School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, United States
| | - Shu Ping Lau
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong 999077, People's Republic of China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518055, People's Republic of China
| | - Ye Zhu
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong 999077, People's Republic of China
| | - Cheng-Yan Xu
- School of Materials Science and Engineering, Harbin Institute of Technology (Shen Zhen), Shen Zhen 518055, People's Republic of China
| | - Yang Chai
- Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong 999077, People's Republic of China
- The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen 518055, People's Republic of China
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