Optimization of gate geometry towards high-sensitivity AlGaN/GaN pH sensor

Status and Prospects of Heterojunction-Based HEMT for Next-Generation Biosensors

High electron mobility transistor (HEMT) biosensors hold great potential for realizing label-free, real-time, and direct detection. Owing to their unique properties of two-dimensional electron gas (2DEG), HEMT biosensors have the ability to amplify current changes pertinent to potential changes with the introduction of any biomolecules, making them highly surface charge sensitive. This review discusses the recent advances in the use of AlGaN/GaN and AlGaAs/GaAs HEMT as biosensors in the context of different gate architectures. We describe the fundamental mechanisms underlying their operational functions, giving insight into crucial experiments as well as the necessary analysis and validation of data. Surface functionalization and biorecognition integrated into the HEMT gate structures, including self-assembly strategies, are also presented in this review, with relevant and promising applications discussed for ultra-sensitive biosensors. Obstacles and opportunities for possible optimization are also surveyed. Conclusively, future prospects for further development and applications are discussed. This review is instructive for researchers who are new to this field as well as being informative for those who work in related fields.

Low limit of detection of the AlGaN/GaN-based sensor by the Kelvin connection detection technique

The AlGaN/GaN-based sensor is a promising POCT (point-of-care-testing) device featuring miniaturization, low cost, and high sensitivity. BNP is an effective protein biomarker for the early diagnosis of HF (heart failure). In this work, a novel AlGaN/GaN device with the Kelvin connection structure and the corresponding detection technique was proposed. This technique can effectively suppress the background noise and improve the SNR (signal-to-noise ratio). A BNP detection experiment was carried out to verify the effectiveness of this technique. It is shown that compared with that of the traditional detection method, the LOD (limit of detection) was improved from 0.47 ng/mL to 1.29 pg/mL. The BNP detection experiment was also carried out with a traditional electrochemical Au-electrode sensor with the same surface functionalization steps. The AlGaN/GaN sensor showed a better LOD than the Au-electrode sensor. Moreover, the influence of AlGaN/GaN sensor package on background noise was investigated with the mechanism of the noise source revealed. Finally, based on the optimized package, the optimal SNR quiescent operating point of the AlGaN/GaN sensor was determined. By biasing the sensor at the optimal quiescent operating point and immobilizing the magnetic beads with anti-BNP on the gate of the AlGaN/GaN sensor, the LOD for BNP detection was further improved to 0.097 pg/mL.

Synthesis of highly crystalline black phosphorus thin films on GaN

Black phosphorus (BP) has recently garnered significant attention due to its specific physical properties. At present, high-quality few-layer and thin-film BP is obtained principally by mechanical exfoliation, restricting its device applications in the future. Here, a facile, direct synthesis of highly crystalline thin-film BP on GaN(001) substrates is achieved by conversion of red phosphorus to BP under atmospheric pressure. The synthesized ≈100-500 nm thick BP thin films with a length ranging from 4 to 15 μm can maintain long-term stability with no sign of oxidation after 5 months of exposure to ambient conditions, as indicated by energy dispersive spectroscopy (EDS). Cross-sectional spherical aberration correction transmission electron microscopy (STEM) analysis of the entire thin-film BP sample did not show any aggregation nucleation through the selected sample. The interface of the BP/GaN heterostructure is atomically sharp, which is very critical for high-performance device fabrication using a direct step in the future. And it is worth noting that there are fluctuations of a few atoms on the surface of GaN. Moreover, using first-principles approaches, here we establish a novel kinetic pathway for fabricating thin-film BP via epitaxial growth. The step of fluctuations with a few atoms on the GaN surface are first preferentially covered by P adatoms, then P adatoms cover the remaining part. Once formed, such a structure of thin-film BP is stable, as tested using EDS and STEM. Combining the results of the experiment and simulation, it can be revealed that the P adatom on undulatory GaN is sufficiently mobile and the undulating surface of GaN plays a major role in forming high-quality thin-films of BP. The preferentially covered nearby step growth mechanism discovered here may enable the mass production of high-quality thin-film BP, and could also be instrumental in achieving the epitaxial growth of thin-film BP on GaN and other 2D materials.

The Leakage Mechanism of the Package of the AlGaN/GaN Liquid Sensor

Wide bandgap gallium nitride (GaN)-based devices have attracted a lot of attention in optoelectronics, power electronics, and sensing applications. AlGaN/GaN based sensors, featuring high-density and high-mobility two-dimensional electron gas (2DEG), have been demonstrated to be effective chemical sensors and biosensors in the liquid environment. One of the key factors limiting the wide adoption of the AlGaN/GaN liquid sensor is the package reliability issue. In this paper, the reliability of three types of sensor packaging materials (SiO₂/Si₃N₄, PI, and SiO₂/Si₃N₄/PI) on top of 5-μm metal are tested in Phosphate buffer saline (PBS) solution. By analyzing the I-V characteristics, it is found that the leakage currents within different regimes follow distinct leakage models, whereby the key factors limiting the leakage current are identified. Moreover, the physical mechanisms of the package failure are illustrated. The failure of the SiO₂/Si₃N₄ package is due to its porous structure such that ions in the solution can penetrate into the packaging material and reduce its resistivity. The failure of the PI package at a relatively low voltage (<3 V) is mainly due to the poor adhesion of PI to the AlGaN surface such that the solution can reach the electrode by the "lateral drilling" effect. The SiO₂/Si₃N₄/PI package achieves less than 10 μA leakage current at 5 V voltage stress because it combines the advantages of the SiO₂/Si₃N₄ and the PI packages. The analysis in this work can provide guidelines for the design and failure mechanism analysis of packaging materials.