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Jiang H, Zhu S, Cui Z, Li Z, Liang Y, Zhu J, Hu P, Zhang HL, Hu W. High-performance five-ring-fused organic semiconductors for field-effect transistors. Chem Soc Rev 2022; 51:3071-3122. [PMID: 35319036 DOI: 10.1039/d1cs01136g] [Citation(s) in RCA: 27] [Impact Index Per Article: 13.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/02/2023]
Abstract
Organic molecular semiconductors have been paid great attention due to their advantages of low-temperature processability, low fabrication cost, good flexibility, and excellent electronic properties. As a typical example of five-ring-fused organic semiconductors, a single crystal of pentacene shows a high mobility of up to 40 cm2 V-1 s-1, indicating its potential application in organic electronics. However, the photo- and optical instabilities of pentacene make it unsuitable for commercial applications. But, molecular engineering, for both the five-ring-fused building block and side chains, has been performed to improve the stability of materials as well as maintain high mobility. Here, several groups (thiophenes, pyrroles, furans, etc.) are introduced to design and replace one or more benzene rings of pentacene and construct novel five-ring-fused organic semiconductors. In this review article, ∼500 five-ring-fused organic prototype molecules and their derivatives are summarized to provide a general understanding of this catalogue material for application in organic field-effect transistors. The results indicate that many five-ring-fused organic semiconductors can achieve high mobilities of more than 1 cm2 V-1 s-1, and a hole mobility of up to 18.9 cm2 V-1 s-1 can be obtained, while an electron mobility of 27.8 cm2 V-1 s-1 can be achieved in five-ring-fused organic semiconductors. The HOMO-LUMO levels, the synthesis process, the molecular packing, and the side-chain engineering of five-ring-fused organic semiconductors are analyzed. The current problems, conclusions, and perspectives are also provided.
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Affiliation(s)
- Hui Jiang
- School of Materials Science and Engineering, Tianjin University, 300072, China. .,Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China.
| | - Shengli Zhu
- School of Materials Science and Engineering, Tianjin University, 300072, China.
| | - Zhenduo Cui
- School of Materials Science and Engineering, Tianjin University, 300072, China.
| | - Zhaoyang Li
- School of Materials Science and Engineering, Tianjin University, 300072, China.
| | - Yanqin Liang
- School of Materials Science and Engineering, Tianjin University, 300072, China.
| | - Jiamin Zhu
- School of Materials Science and Engineering, Tianjin University, 300072, China.
| | - Peng Hu
- School of Physics, Northwest University, Xi'an 710069, China
| | - Hao-Li Zhang
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China. .,State Key Laboratory of Applied Organic Chemistry, Key Laboratory of Special Function Materials and Structure Design, College of Chemistry and Chemical Engineering, Lanzhou University, Lanzhou 730000, China.
| | - Wenping Hu
- Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University, Tianjin 300072, China. .,Joint School of National University of Singapore and Tianjin University, International Campus of Tianjin University, Fuzhou 350207, China
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Mari D, Miyagawa N, Okano K, Mori A. Regiocontrolled Halogen Dance of Bromothiophenes and Bromofurans. J Org Chem 2018; 83:14126-14137. [PMID: 30387608 DOI: 10.1021/acs.joc.8b02220] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
The LDA (lithium diisopropylamide)-promoted regiocontrolled halogen dance of α-bromothiophenes and α-bromofurans is described. Bromothiophenes bearing a diethyl acetal moiety undergo selective deprotonation at the β-position adjacent to the bromo group. In contrast, oxazoline, ester, and amide groups act as directing groups in the initial lithiation step to generate a carbanion at the β-position neighboring the directing group to exclusively give the other regioisomer. These results can be applied to the regiocontrolled halogen dance of bromofuran derivatives.
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Affiliation(s)
- Daichi Mari
- Department of Chemical Science and Engineering , Kobe University , 1-1 Rokkodai , Nada, Kobe 657-8501 , Japan
| | - Naoki Miyagawa
- Department of Chemical Science and Engineering , Kobe University , 1-1 Rokkodai , Nada, Kobe 657-8501 , Japan
| | - Kentaro Okano
- Department of Chemical Science and Engineering , Kobe University , 1-1 Rokkodai , Nada, Kobe 657-8501 , Japan
| | - Atsunori Mori
- Department of Chemical Science and Engineering , Kobe University , 1-1 Rokkodai , Nada, Kobe 657-8501 , Japan
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Angı A, Sinelnikov R, Heenen HH, Meldrum A, Veinot JGC, Scheurer C, Reuter K, Ashkenazy O, Azulay D, Balberg I, Millo O, Rieger B. The influence of conjugated alkynyl(aryl) surface groups on the optical properties of silicon nanocrystals: photoluminescence through in-gap states. NANOTECHNOLOGY 2018; 29:355705. [PMID: 29862985 DOI: 10.1088/1361-6528/aac9ef] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
Developing new methods, other than size and shape, for controlling the optoelectronic properties of semiconductor nanocrystals is a highly desired target. Here we demonstrate that the photoluminescence (PL) of silicon nanocrystals (SiNCs) can be tuned in the range 685-800 nm solely via surface functionalization with alkynyl(aryl) (phenylacetylene, 2-ethynylnaphthalene, 2-ethynyl-5-hexylthiophene) surface groups. Scanning tunneling microscopy/spectroscopy on single nanocrystals revealed the formation of new in-gap states adjacent to the conduction band edge of the functionalized SiNCs. PL red-shifts were attributed to emission through these in-gap states, which reduce the effective band gap for the electron-hole recombination process. The observed in-gap states can be associated with new interface states formed via (-Si-C≡C-) bonds in combination with conjugated molecules as indicated by ab initio calculations. In contrast to alkynyl(aryl)s, the formation of in-gap states and shifts in PL maximum of the SiNCs were not observed with aryl (phenyl, naphthalene, 2-hexylthiophene) and alkynyl (1-dodecyne) surface groups. These outcomes show that surface functionalization with alkynyl(aryl) molecules is a valuable tool to control the electronic structure and optical properties of SiNCs via tuneable interface states, which may enhance the performance of SiNCs in semiconductor devices.
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Affiliation(s)
- Arzu Angı
- WACKER-Lehrstuhl für Makromolekulare Chemie, Technische Universität München, Lichtenbergstraße 4, D-85747, Germany. Catalysis Research Center, Ernst-Otto-Fischer-Straße 1, D-85748 Garching, Germany
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Zheng T, Cai Z, Ho-Wu R, Yau SH, Shaparov V, Goodson T, Yu L. Synthesis of Ladder-Type Thienoacenes and Their Electronic and Optical Properties. J Am Chem Soc 2016; 138:868-75. [PMID: 26720200 DOI: 10.1021/jacs.5b10175] [Citation(s) in RCA: 72] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/08/2023]
Abstract
A series of ladder-type thienoacenes based on benzo[1,2-b:4,5-b']dithiophene (BDT) have been synthesized and characterized. They were shown to be p-type semiconductors with wide band gaps and able to support multiple stable cationic states. As the conjugation lengthens, these oligomers become more emissive, showing high quantum yields. They were shown to be good two-photon absorbers, exhibiting high two-photon absorption coefficients.
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Affiliation(s)
- Tianyue Zheng
- Department of Chemistry and the James Franck Institute, The University of Chicago , 929 East 57th Street, Chicago, Illinois 60637, United States
| | - Zhengxu Cai
- Department of Chemistry and the James Franck Institute, The University of Chicago , 929 East 57th Street, Chicago, Illinois 60637, United States
| | - Rosina Ho-Wu
- Department of Chemistry and Department of Macromolecular Science and Engineering, University of Michigan , Ann Arbor, Michigan 48109, United States
| | - Sung Hei Yau
- Department of Chemistry and Department of Macromolecular Science and Engineering, University of Michigan , Ann Arbor, Michigan 48109, United States
| | - Valerii Shaparov
- Department of Chemistry and the James Franck Institute, The University of Chicago , 929 East 57th Street, Chicago, Illinois 60637, United States
| | - Theodore Goodson
- Department of Chemistry and Department of Macromolecular Science and Engineering, University of Michigan , Ann Arbor, Michigan 48109, United States
| | - Luping Yu
- Department of Chemistry and the James Franck Institute, The University of Chicago , 929 East 57th Street, Chicago, Illinois 60637, United States
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Kotha S, Chinnam AK, Shirbhate ME. Design and synthesis of hybrid cyclophanes containing thiophene and indole units via Grignard reaction, Fischer indolization and ring-closing metathesis as key steps. Beilstein J Org Chem 2015; 11:1514-1519. [PMID: 26425209 PMCID: PMC4578400 DOI: 10.3762/bjoc.11.165] [Citation(s) in RCA: 11] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/01/2015] [Accepted: 08/13/2015] [Indexed: 11/23/2022] Open
Abstract
We demonstrate a new synthetic strategy to cyclophanes containing thiophene and indole moieties via Grignard addition, Fischer indolization and ring-closing metathesis as key steps.
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Affiliation(s)
- Sambasivarao Kotha
- Department of Chemistry, Indian Institute of Technology-Bombay, Powai, Mumbai-400 076, India
| | - Ajay Kumar Chinnam
- Department of Chemistry, Indian Institute of Technology-Bombay, Powai, Mumbai-400 076, India
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