Scalable solution processing of amorphous and crystalline chalcogenide films

Solution processed multi-layered thin films of Ge20Sb5S75 and Ge20Sb5Se75 chalcogenide glasses

Solution processed non-toxic Ge20Sb5Se75 chalcogenide glass thin films were deposited using spin-coating method from n-propylamine-methanol solvent mixture in specular optical quality. Optical properties, composition, structure, and chemical resistance were studied in dependence on the annealing temperature. Significant increase of refractive index and chemical resistance caused by thermoinduced structural polymerization and release of organic residua were observed. The high chemical resistance of hard-baked thin films allowed repeated direct depositions by spin-coating, increasing total thickness. Multilayered thin films of amorphous Ge20Sb5Se75 and Ge20Sb5S75 were also successfully prepared by direct deposition for the first time. Solution based deposition of non-toxic Ge20Sb5Se75 thin films in specular optical quality significantly widens the applicability of solution processed chalcogenide glass thin films. Moreover, solution based direct deposition of different glasses on hard-baked thin films opens the way to simple and cost-effective preparation of more sophisticated optical elements (e.g. beam splitters, photonic mirrors).

Evaporated nanometer chalcogenide films for scalable high-performance complementary electronics

The exploration of stable and high-mobility semiconductors that can be grown over a large area using cost-effective methods continues to attract the interest of the electronics community. However, many mainstream candidates are challenged by scarce and expensive components, manufacturing costs, low stability, and limitations of large-area growth. Herein, we report wafer-scale ultrathin (metal) chalcogenide semiconductors for high-performance complementary electronics using standard room temperature thermal evaporation. The n-type bismuth sulfide delivers an in-situ transition from a conductor to a high-mobility semiconductor after mild post-annealing with self-assembly phase conversion, achieving thin-film transistors with mobilities of over 10 cm² V^-1 s^-1, on/off current ratios exceeding 10⁸, and high stability. Complementary inverters are constructed in combination with p-channel tellurium device with hole mobilities of over 50 cm² V^-1 s^-1, delivering remarkable voltage transfer characteristics with a high gain of 200. This work has laid the foundation for depositing scalable electronics in a simple and cost-effective manner, which is compatible with monolithic integration with commercial products such as organic light-emitting diodes.