Hernández-Saz J, Herrera M, Delgado FJ, Duguay S, Philippe T, Gonzalez M, Abell J, Walters RJ, Molina SI. Atom-scale compositional distribution in InAlAsSb-based triple junction solar cells by atom probe tomography.
NANOTECHNOLOGY 2016;
27:305402. [PMID:
27306098 DOI:
10.1088/0957-4484/27/30/305402]
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Abstract
The analysis by atom probe tomography (APT) of InAlAsSb layers with applications in triple junction solar cells (TJSCs) has shown the existence of In- and Sb-rich regions in the material. The composition variation found is not evident from the direct observation of the 3D atomic distribution and because of this a statistical analysis has been required. From previous analysis of these samples, it is shown that the small compositional fluctuations determined have a strong effect on the optical properties of the material and ultimately on the performance of TJSCs.
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