Angle-resolved STEM using an iris aperture: Scattering contributions and sources of error for the quantitative analysis in Si

Element specific atom counting for heterogeneous nanostructures: Combining multiple ADF STEM images for simultaneous thickness and composition determination

In this paper, a methodology is presented to count the number of atoms in heterogeneous nanoparticles based on the combination of multiple annular dark field scanning transmission electron microscopy (ADF STEM) images. The different non-overlapping annular detector collection regions are selected based on the principles of optimal statistical experiment design for the atom-counting problem. To count the number of atoms, the total intensities of scattered electrons for each atomic column, the so-called scattering cross-sections, are simultaneously compared with simulated library values for the different detector regions by minimising the squared differences. The performance of the method is evaluated for simulated Ni@Pt and Au@Ag core-shell nanoparticles. Our approach turns out to be a dose efficient alternative for the investigation of beam-sensitive heterogeneous materials as compared to the combination of ADF STEM and energy dispersive X-ray spectroscopy.

A comparison of molecular dynamics potentials used to account for thermal diffuse scattering in multislice simulations

Here we investigate electron scattering simulations with thermal displacements incorporated using molecular dynamics potentials. Specifically, we explore the sensitivity of electron scattering to the phonon band structure, or more explicitly interatomic forces. Silicon serves as the model material where we introduce thermal atomic displacements via empirical and machine-learned molecular dynamics interatomic potentials and compare them to finite-temperature density functional theory interatomic forces. We demonstrate that when molecular dynamics potentials do not sufficiently reproduce the correct phonon band structure, significant errors in the simulated diffraction and image intensities can occur. Moreover, for Si, we find that multislice simulations using machine-learned interatomic potentials are more accurate than empirical ones. In addition to the selected atomic potential, we demonstrate that the sensitivity to the phonon band structure also depends on the crystal zone axis, which can be used to enhance sensitivity to thermal displacements. Finally, we provide a sensitivity analysis with angle-resolved scanning transmission electron microscopy (STEM) to enhance image sensitivity to the details of the phonon band structure.