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Wen H, Zhang H, Peng R, Liu C, Liu S, Liu F, Xie H, Liu Z. 3D Strain Measurement of Heterostructures Using the Scanning Transmission Electron Microscopy Moiré Depth Sectioning Method. SMALL METHODS 2023; 7:e2300107. [PMID: 37300326 DOI: 10.1002/smtd.202300107] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/28/2023] [Revised: 05/03/2023] [Indexed: 06/12/2023]
Abstract
The mechanical properties of micro- and nanoscale materials directly determine the reliability of heterostructures, microstructures, and microdevices. Therefore, an accurate evaluation of the 3D strain field at the nanoscale is important. In this study, a scanning transmission electron microscopy (STEM) moiré depth sectioning method is proposed. By optimizing the scanning parameters of electron probes at different depths of the material, the sequence STEM moiré fringes (STEM-MFs) with a large field of view, which can be hundreds of nanometers obtained. Then, the 3D STEM moiré information constructed. To some extent, multi-scale 3D strain field measurements from nanometer to the submicrometer scale actualized. The 3D strain field near the heterostructure interface and single dislocation accurately measured by the developed method.
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Affiliation(s)
- Huihui Wen
- School of Electrical Engineering, Hebei University of Science and Technology, Shijiazhuang, 050018, China
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, China
| | - Hongye Zhang
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, China
- School of Technology, Beijing Forestry University, Beijing, 100083, China
| | - Runlai Peng
- School of Technology, Beijing Forestry University, Beijing, 100083, China
| | - Chao Liu
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Shuman Liu
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Fengqi Liu
- Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Huimin Xie
- AML, Department of Engineering Mechanics, Tsinghua University, Beijing, 100084, China
| | - Zhanwei Liu
- School of Aerospace Engineering, Beijing Institute of Technology, Beijing, 100081, China
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