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Hu L, Yang Z, Fang Y, Li Q, Miao Y, Lu X, Sun X, Zhang Y. A 110-170 GHz Wideband LNA Design Using the InP Technology for Terahertz Communication Applications. MICROMACHINES 2023; 14:1921. [PMID: 37893358 PMCID: PMC10609183 DOI: 10.3390/mi14101921] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/31/2023] [Revised: 09/02/2023] [Accepted: 09/26/2023] [Indexed: 10/29/2023]
Abstract
This paper proposes a low-noise amplifier (LNA) for terahertz communication systems. The amplifier is designed based on 90 nm InP high-electron-mobility transistor (HEMT) technology. In order to achieve high gain of LNA, the proposed amplifier adopts a five-stage amplification structure. At the same time, the use of staggered tuning technology has achieved a large bandwidth of terahertz low-noise amplification. In addition, capacitors are used for interstage isolation, sector lines are used for RF bypass, and Microstrip is used to design matching circuits. The entire LNA circuit was validated using accurate electromagnetic simulation. The simulation results show that at 140 GHz, the small signal gain is 25 dB, the noise figure is 4.4 dB, the input 1 dB compression point is -19 dBm, and the 3 dB bandwidth reaches 60 GHz (110-170 GHz), which validates the effectiveness of the design.
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Affiliation(s)
- Lian Hu
- School of Electronic Science and Engineering (National Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu 610054, China; (L.H.); (Q.L.); (Y.M.); (X.L.); (X.S.); (Y.Z.)
- Huzhou Key Laboratory of Terahertz Integrated Circuits and Systems, Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China
| | - Ziqiang Yang
- School of Electronic Science and Engineering (National Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu 610054, China; (L.H.); (Q.L.); (Y.M.); (X.L.); (X.S.); (Y.Z.)
- Huzhou Key Laboratory of Terahertz Integrated Circuits and Systems, Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China
| | - Yuan Fang
- The 13th Research Institute, CETC, Shijiazhuang 050051, China;
| | - Qingfeng Li
- School of Electronic Science and Engineering (National Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu 610054, China; (L.H.); (Q.L.); (Y.M.); (X.L.); (X.S.); (Y.Z.)
- Huzhou Key Laboratory of Terahertz Integrated Circuits and Systems, Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China
| | - Yixuan Miao
- School of Electronic Science and Engineering (National Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu 610054, China; (L.H.); (Q.L.); (Y.M.); (X.L.); (X.S.); (Y.Z.)
| | - Xiaofeng Lu
- School of Electronic Science and Engineering (National Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu 610054, China; (L.H.); (Q.L.); (Y.M.); (X.L.); (X.S.); (Y.Z.)
| | - Xuechun Sun
- School of Electronic Science and Engineering (National Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu 610054, China; (L.H.); (Q.L.); (Y.M.); (X.L.); (X.S.); (Y.Z.)
| | - Yaxin Zhang
- School of Electronic Science and Engineering (National Exemplary School of Microelectronics), University of Electronic Science and Technology of China, Chengdu 610054, China; (L.H.); (Q.L.); (Y.M.); (X.L.); (X.S.); (Y.Z.)
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Abstract
Epitaxial graphene grown on semiinsulating silicon carbide was used to fabricate side gate graphene transistors. The transconductance of the side gate transistors is comparable to top gate designs. The transconductance decreases with increasing gate width independently on the gate to channel distance in agreement with the transconductance reduction in top gate transistor configu¬rations with increasing channel length. The transconductance of the side gate transistors decreases with increasing channel width due to a decreased specific gate capacitance.
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