Structure determination of atomically controlled crystal architectures grown within single wall carbon nanotubes

Electrochemistry of Carbon Materials: Progress in Raman Spectroscopy, Optical Absorption Spectroscopy, and Applications

This paper is dedicated to the discussion of applications of carbon material in electrochemistry. The paper starts with a general discussion on electrochemical doping. Then, investigations by spectroelectrochemistry are discussed. The Raman spectroscopy experiments in different electrolyte solutions are considered. This includes aqueous solutions and acetonitrile and ionic fluids. The investigation of carbon nanotubes on different substrates is considered. The optical absorption experiments in different electrolyte solutions and substrate materials are discussed. The chemical functionalization of carbon nanotubes is considered. Finally, the application of carbon materials and chemically functionalized carbon nanotubes in batteries, supercapacitors, sensors, and nanoelectronic devices is presented.

Phemenology of Filling, Investigation of Growth Kinetics and Electronic Properties for Applications of Filled Single-Walled Carbon Nanotubes

This review discusses the phemenology of filling, the investigation of kinetics, and the electronic properties for applications of filled single-walled carbon nanotubes (SWCNTs), and summarizes five main achievements that were obtained in processing the spectroscopic data of SWCNTs filled with metal halogenide, metal chalcogenide, metal and metallocenes. First, the methods of processing kinetic data were developed to reveal precise trends in growth rates and activation energies of the growth of SWCNTs. Second, the metal-dependence of kinetics was revealed. Third, metallicity-sorted (metallic and semiconducting) SWCNTs were filled with a range of substances and the electronic properties were investigated. Fourth, new approaches to processing the data of spectroscopic investigations of filled SWCNTs were developed, which allowed more reliable and precise analysis of the experimental results. Fifth, the correlation between the physical and chemical properties of encapsulated substances and the electronic properties of SWCNTs were elucidated. These points are highlighted in the review.

Metal and Metal Halogenide-Filled Single-Walled Carbon Nanotubes: Kinetics, Electronic Properties, Engineering the Fermi Level

Here, we present a review of the major achievements in kinetics, electronic properties, and engineering in the Fermi level of single-walled carbon nanotubes (SWCNTs). Firstly, the kinetics of metal-filled SWCNTs were revealed with precision over several minutes. Secondly, the growth rates of nanotubes were calculated. Thirdly, the activation energies of nanotubes were measured. Fourthly, the methods of the quantitative analysis of the doping level were developed. Indeed, only qualitative analysis has been previously performed. The quantitative analysis allowed us to obtain quantitative data on charge transfer. Fifthly, the correlation between the physical properties, chemical properties, electronic properties of SWCNTs was elucidated.

Capsulate structure effect on SWNTs doping in RbxAg1−xI@SWNT composites

The paper reports the relationship between single-walled carbon nanotube (SWNT) doping and capsulate crystal structure in Rb_xAg_1−xI@SWNT composites.

Band gap expansion, shear inversion phase change behaviour and low-voltage induced crystal oscillation in low-dimensional tin selenide crystals

In common with rocksalt-type alkali halide phases and also semiconductors such as GeTe and SnTe, SnSe forms all-surface two atom-thick low dimensional crystals when encapsulated within single walled nanotubes (SWNTs) with diameters below ∼1.4 nm. Whereas previous density functional theory (DFT) studies indicate that optimised low-dimensional trigonal HgTe changes from a semi-metal to a semi-conductor, low-dimensional SnSe crystals typically undergo band-gap expansion. In slightly wider diameter SWNTs (∼1.4-1.6 nm), we observe that three atom thick low dimensional SnSe crystals undergo a previously unobserved form of a shear inversion phase change resulting in two discrete strain states in a section of curved nanotube. Under low-voltage (i.e. 80-100 kV) imaging conditions in a transmission electron microscope, encapsulated SnSe crystals undergo longitudinal and rotational oscillations, possibly as a result of the increase in the inelastic scattering cross-section of the sample at those voltages.