A method for directly correlating site-specific cross-sectional and plan-view transmission electron microscopy of individual nanostructures

An in-situ method for protecting internal cracks/pores from ion beam damage and reducing curtaining for TEM sample preparation using FIB

Focused ion beam (FIB) milling has evolved to be one of the most important Transmission Electron Microscope (TEM) site specific sample preparation techniques. However, this technique still poses challenges, such as the structural damage and potential curtaining issues often observed for thin TEM lamella. These artefacts can negatively affect the TEM analysis results. In particular, structures such as internal cracks and pores in FIB prepared TEM samples can often be damaged during sample preparation. This is commonly regarded as an unavoidable problem, even though microstructurally intact thin lamellae TEM samples are widely needed for the investigation of crack tips or pore morphologies in many different materials. This presents a strong driver for the development of innovative methods to overcome damage and curtaining issues during FIB sample preparation. Here we report on a new methodology developed to protect internal cracks and pores from ion beam damage. Our proposed method also mitigates curtaining issues, which often make TEM analysis more difficult. This method uses the FIB to sputter and redeposit material onto the edges of any cracks or pores in order to fill these features in-situ prior to lamella thinning. Case studies showcasing this method are presented, demonstrating the approach on a modular pure iron sample and on a porous laser treated Al/B₄C composite sample. Our proposed 'filling' method has demonstrated a two key benefits; it preserves the integrity of the edges of any cracks and pores and it reducing curtaining. The results also demonstrate that this technique can be an alternative to conventional Gas Injection System (GIS) deposition for protecting the external top surface.

Three-Dimensional Atomistic Tomography of W-Based Alloyed Two-Dimensional Transition Metal Dichalcogenides

Increased interest in two-dimensional (2D) materials and heterostructures for use as components of electrical devices has led to the use of an atomically mixed phase between semiconducting and metallic transition metal dichalcogenides that exhibited enhanced interfacial characteristics. To understand the lattice structure and properties of 2D materials on the atomic scale, diverse characterization methods such as Raman spectroscopy, high-resolution transmission electron microscopy (HR-TEM), and X-ray photoemission spectroscopy (XPS) have been applied. However, determination of the exact chemical distribution, which is a critical factor for the interfacial layer, was hindered by limitations of these typical methods. In this work, atom-probe tomography (APT) was introduced for the first time to analyze the three-dimensional atomic distribution and composition variation of the atomic-scale multilayered alloy structure W _xNb_{(1- x)}Se₂. Composition profiles and theoretical calculations for each atom demonstrated the reaction kinetics and stoichiometric inhomogeneity of the W _xNb_{(1- x)}Se₂ layer. The role of the intermediate layer was investigated by fabrication of a WSe₂-based field-effect transistor. Introduction of W _xNb_{(1- x)}Se₂ between metallic NbSe₂ and semiconducting WSe₂ layers resulted in improved charge transport with lowering of the contact barrier.

An Atomistic Tomographic Study of Oxygen and Hydrogen Atoms and their Molecules in CVD Grown Graphene

The properties and growth processes of graphene are greatly influenced by the elemental distributions of impurity atoms and their functional groups within or on the hexagonal carbon lattice. Oxygen and hydrogen atoms and their functional molecules (OH, CO, and CO2 ) positions' and chemical identities are tomographically mapped in three dimensions in a graphene monolayer film grown on a copper substrate, at the atomic part-per-million (atomic ppm) detection level, employing laser assisted atom-probe tomography. The atomistic plan and cross-sectional views of graphene indicate that oxygen, hydrogen, and their co-functionalities, OH, CO, and CO2 , which are locally clustered under or within the graphene lattice. The experimental 3D atomistic portrait of the chemistry is combined with computational density-functional theory (DFT) calculations to enhance the understanding of the surface state of graphene, the positions of the chemical functional groups, their interactions with the underlying Cu substrate, and their influences on the growth of graphene.

Fabrication of high quality plan-view TEM specimens using the focused ion beam

We describe a technique using a focused ion beam instrument to fabricate high quality plan-view specimens for transmission electron microscopy studies. The technique is simple, site-specific and is capable of fabricating multiple large, >100 μm(2) electron transparent windows within epitaxially grown thin films. A film of La0.67Sr0.33MnO3 is used to demonstrate the technique and its structural and functional properties are surveyed by high resolution imaging, electron spectroscopy, atomic force microscopy and Lorentz electron microscopy. The window is demonstrated to have good thickness uniformity and a low defect density that does not impair the film's Curie temperature. The technique will enable the study of in-plane structural and functional properties of a variety of epitaxial thin film systems.

Investigation of III-V nanowires by plan-view transmission electron microscopy: InN case study

We discuss observations of InN nanowires (NWs) by plan-view high-resolution transmission electron microscopy (TEM). The main difficulties arise from suitable methods available for plan-view specimen preparation. We explore different approaches and find that the best results are obtained using a refined preparation method based on the conventional procedure for plan-view TEM of thin films, specifically modified for the NW morphology. The fundamental aspects of such a preparation are the initial mechanical stabilization of the NWs and the minimization of the ion-milling process after dimpling the samples until perforation. The combined analysis by plan-view and cross-sectional TEM of the NWs allows determination of the degree of strain relaxation and reveals the formation of an unintentional shell layer (2-3-nm thick) around the InN NWs. The shell layer is composed of bcc In2O3 nanocrystals with a preferred orientation with respect to the wurtzite InN: In2O3 [111] || InN [0001] and In2O3<110>||InN<1120>.

FIB plan and side view cross-sectional TEM sample preparation of nanostructures

Focused ion beam is a powerful method for cross-sectional transmission electron microscope sample preparation due to being site specific and not limited to certain materials. It has, however, been difficult to apply to many nanostructured materials as they are prone to damage due to extending from the surface. Here we show methods for focused ion beam sample preparation for transmission electron microscopy analysis of such materials, demonstrated on GaAs-GaInP core shell nanowires. We use polymer resin as support and protection and are able to produce cross-sections both perpendicular to and parallel with the substrate surface with minimal damage. Consequently, nanowires grown perpendicular to the substrates could be imaged both in plan and side view, including the nanowire-substrate interface in the latter case. Using the methods presented here we could analyze the faceting and homogeneity of hundreds of adjacent nanowires in a single lamella.