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Guerguis B, Cuduvally R, Morris RJH, Arcuri G, Langelier B, Bassim N. The impact of electric field strength on the accuracy of boron dopant quantification in silicon using atom probe tomography. Ultramicroscopy 2024; 266:114034. [PMID: 39205346 DOI: 10.1016/j.ultramic.2024.114034] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/05/2024] [Revised: 07/05/2024] [Accepted: 08/18/2024] [Indexed: 09/04/2024]
Abstract
This study investigates the impact of the surface electric field on the quantification accuracy of boron (B) implanted silicon (Si) using atom probe tomography (APT). The Si Charge-State Ratio (CSR(Si) = Si2+/Si+) was used as an indirect measure of the average apex electric field during analysis. For a range of electric fields, the accuracy of the total implanted dose and the depth profile shape determined by APT was evaluated against the National Institute of Standards and Technology Standard Reference Material 2137. The radial (non-)uniformity of the detected B was also examined. At a higher surface electric field (i.e., a greater CSR(Si)), the determined B dose converges on the certified dose. Additionally, the depth profile shape tends towards that derived by secondary ion mass spectrometry. This improvement coincides with a more uniform radial B distribution, evidenced by desorption maps. In contrast, for lower surface electric fields (i.e., a lower CSR(Si)), the B dose is significantly underestimated, and the depth profile is artificially stretched. The desorption maps also indicate a highly inhomogeneous B emission localized around the center of the detector, which is believed to be an artifact of B surface migration on the tip of the sample. For the purposes of routine investigations of semiconductor devices using APT, these results illustrate the potential origin of quantification artifacts and their severity at different operating conditions, thus providing pathways towards best practices for accurate and repeatable measurements.
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Affiliation(s)
- Bavley Guerguis
- Department of Materials Science and Engineering, McMaster University, Hamilton, ON L8S 4L7, Canada.
| | - Ramya Cuduvally
- Department of Materials Science and Engineering, McMaster University, Hamilton, ON L8S 4L7, Canada; Canadian Centre for Electron Microscopy, McMaster University, Hamilton, ON L8S 4M1, Canada
| | | | - Gabriel Arcuri
- Canadian Centre for Electron Microscopy, McMaster University, Hamilton, ON L8S 4M1, Canada
| | - Brian Langelier
- Department of Materials Science and Engineering, McMaster University, Hamilton, ON L8S 4L7, Canada; Canadian Centre for Electron Microscopy, McMaster University, Hamilton, ON L8S 4M1, Canada
| | - Nabil Bassim
- Department of Materials Science and Engineering, McMaster University, Hamilton, ON L8S 4L7, Canada; Canadian Centre for Electron Microscopy, McMaster University, Hamilton, ON L8S 4M1, Canada
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Hu R, Xue J, Wu X, Zhang Y, Zhu H, Sha G. Atom Probe Tomography Characterization of Dopant Distributions in Si FinFET: Challenges and Solutions. MICROSCOPY AND MICROANALYSIS : THE OFFICIAL JOURNAL OF MICROSCOPY SOCIETY OF AMERICA, MICROBEAM ANALYSIS SOCIETY, MICROSCOPICAL SOCIETY OF CANADA 2020; 26:36-45. [PMID: 31753061 DOI: 10.1017/s1431927619015137] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Atom probe tomography (APT) has emerged as an important tool in characterizing three-dimensional semiconductor devices. However, the complex structure and hybrid nature of a semiconductor device can pose serious challenges to the accurate measurement of dopants. In particular, local magnification and trajectory aberration observed when analyzing hybrid materials with different evaporation fields can cause severe distortions in reconstructed geometry and uncertainty in local chemistry measurement. To address these challenges, this study systematically investigates the effect of APT sampling directions on the measurement of n-type dopants P and As in an Si fin field-effect transistor (FinFET). We demonstrate that the APT samples made with their Z-axis perpendicular to the center axis of the fin are effective to minimize the negative effects that result from evaporation field differences between the Si fin and SiO2 on reconstruction and achieve improved measurement of dopant distributions. In addition, new insights have been gained regarding the distribution of ion-implanted P and As in the Si FinFET.
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Affiliation(s)
- Rong Hu
- Herbert Gleiter Institute of Nanoscience, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu210094, China
| | - Jing Xue
- Herbert Gleiter Institute of Nanoscience, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu210094, China
| | - Xingping Wu
- Herbert Gleiter Institute of Nanoscience, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu210094, China
| | - Yanbo Zhang
- Institute of Microelectronics of Chinese Academy of Sciences, Beijing100029, China
| | - Huilong Zhu
- Institute of Microelectronics of Chinese Academy of Sciences, Beijing100029, China
| | - Gang Sha
- Herbert Gleiter Institute of Nanoscience, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, Jiangsu210094, China
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Yeoh WK, Hung S, Chen S, Lin Y, Lee JJ. Quantification of dopant species using atom probe tomography for semiconductor application. SURF INTERFACE ANAL 2019. [DOI: 10.1002/sia.6706] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.4] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
Affiliation(s)
- Wai Kong Yeoh
- Failure Analysis DivisionTaiwan Semiconductor Manufacturing Company, Ltd Hsinchu Taiwan
| | - Shih‐Wei Hung
- Failure Analysis DivisionTaiwan Semiconductor Manufacturing Company, Ltd Hsinchu Taiwan
| | - Shih‐Che Chen
- Department of Materials Science and EngineeringNational Taiwan University Taipei Taiwan
| | - Yi‐Hsiang Lin
- Failure Analysis DivisionTaiwan Semiconductor Manufacturing Company, Ltd Hsinchu Taiwan
| | - Jang Jung Lee
- Failure Analysis DivisionTaiwan Semiconductor Manufacturing Company, Ltd Hsinchu Taiwan
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