Probing Voltage Drop Variations in Graphene with Photoelectron Spectroscopy

AC-Modulated XPS Enables to Externally Control the Electrical Field Distributions on Metal Electrode/Ionic Liquid Devices

X-Ray Photoelectron Spectroscopy (XPS) has been utilized to extract local electrical potential profiles by recording core-level binding energy shifts upon application of the AC [square-wave (SQW)] bias with different frequencies. An electrochemical system consisting of a coplanar capacitor with a polyethylene membrane (PEM) coated with the Ionic Liquid (IL) N,N-diethyl-N-methyl-N-(2-methoxyethyl) ammonium bis(trifluoromethanesulfonyl)imide (DEME-TFSI) as the electrolyte is investigated. Analyses are carried out in operando, such that XPS measurements are recorded simultaneously with current measurements. ILs have complex charging/discharging processes, in addition to the formation of Electrical Double Layers (EDL) at the interfaces, and certain properties of these processes can be captured using AC modulation within appropriate time windows of observation. Herein, we select two frequencies, namely, 10 kHz and 0.1 Hz, to separate effects of the fast polarization and slow migratory motions, respectively. Moreover, the local potential developments after adding two equivalent series resistors at three different physical positions of the device have been carefully evaluated from the binding energy shifts in the F 1s peak representing the anion of the IL. This circuit modification allows us to quantify the AC currents passing through the device, as well as the system's impedance, in addition to revealing the potential variations due the IR drops. The complex AC-modulated local XPS data recorded can also be faithfully reproduced using the unmodulated F 1s spectrum and by convoluting it with electrical circuit output provided by the LT-Spice software. The outcome of these efforts is a more realistic equivalent circuit model, which can be related to chemical/physical makeup of the electrochemical system. An important finding of this methodology emerges as the possibility to induce additional local electrical field developments within the device, the directions of which can be reversed controllably.

Operando photoelectron spectroscopy analysis of graphene field-effect transistors

In this study, operando photoelectron spectroscopy was used to characterize the performance of graphene field-effect transistors under working conditions. By sweeping the back-gate voltages, the carrier concentration of the graphene channel on the 150 nm Si₃N₄/Si substrate was tuned. From the C1s core level spectra acquired under the application of different gate voltages, the binding energy shifts caused by electric-field effects were obtained and analyzed. Together with the C1s peak shape information and the photoluminescence spectrum of the Si₃N₄/Si substrate, the presence of local potential across the x-ray beam spot associated with defects and gate leakage current in amorphous Si₃N₄was identified. The presence of defects in Si₃N₄/Si substrate could not only screen the partial electric field generated by the back gate but also serve as long-range scattering centers to the carriers, thus affecting charge transport in the graphene channel. Our findings will help further investigate the dielectric/graphene interface properties and accelerate the utilization of graphene in real device applications.

XPS enables visualization of electrode potential screening in an ionic liquid medium with temporal- and lateral-resolution

We present an X-ray photoelectron spectroscopic (XPS) investigation of potential screening across two gold electrodes fabricated on a porous polymer surface which is impregnated with the ionic liquid (IL) N-N-diethyl-N-methyl-N-(2-methoxyethyl)ammonium bis(trifluoromethanesulfonyl)imide [DEME-TFSI]. The IL provides a sheet of conducting layers to the insulating polymer film, and allows monitoring charging and screening dynamics at the polymer + IL/vacuum interface in a laterally resolved fashion across the electrodes. Time-resolved measurements are also implemented by recording F1s peaks of the IL, while imposing 10 mHz square-wave (SQW) pulses across the two electrodes in a source-drain geometry. Variations in the F1s binding energy reflect directly the transient local electrical potential, and allow us to visualize screening of the otherwise built-in local voltage drop on and across the metal electrodes in the range of millimeters. Accordingly, the device is partitioned into two oppositely polarized regions, each following polarization of one electrode through the IL medium. On the other extreme, upon imposing relatively fast 1 kHz SQW pulses the charge screening is prevented and the device is brought to assume a simple resistor role. A simple equivalent circuit model also reproduces the observed voltage transients qualitatively. The presented structure and variants of XPS measurements, enabling us to record voltage transients in unexpectedly large lateral distances away from the electrodes, can impact the understanding of various electrochemical concepts.

Location and Visualization of Working p-n and/or n-p Junctions by XPS

X-ray photoelectron spectroscopy (XPS) is used to follow some of the electrical properties of a segmented silicon photodetector, fabricated in a p-n-p configuration, during operation under various biasing configurations. Mapping of the binding energy position of Si2p reveals the shift in the position of the junctions with respect to the polarity of the DC bias applied. Use of squared and triangular shaped wave excitations, while recording XPS data, allows tapping different electrical properties of the device under normal operational conditions, as well as after exposing parts of it to harsh physical and chemical treatments. Unique and chemically specific electrical information can be gained with this noninvasive approach which can be useful especially for localized device characterization and failure analyses.

Chemical Visualization of a GaN p-n junction by XPS

We report on an operando XPS investigation of a GaN diode, by recording the Ga2p_3/2 peak position under both forward and reverse bias. Areal maps of the peak positions under reverse bias are completely decoupled with respect to doped regions and allow a novel chemical visualization of the p-n junction in a 2-D fashion. Other electrical properties of the device, such as leakage current, resistivity of the domains are also tapped via recording line-scan spectra. Application of a triangular voltage excitation enables probing photoresponse of the device.

Gate-tunable photoemission from graphene transistors

In this Letter, we report gate-tunable X-ray photoelectron emission from back-gated graphene transistors. The back-gated transistor geometry allows us to study photoemission from graphene layer and the dielectric substrate at various gate voltages. Application of gate voltage electrostatically dopes graphene and shifts the binding energy of photoelectrons in various ways depending on the origin and the generation mechanism(s) of the emitted electrons. The gate-induced shift of the Fermi energy of graphene alters the binding energy of the C 1s electrons, whereas the electric field of the gate electrodes shift the binding energy of core electrons emitted from the gate dielectric underneath the graphene layer. The gradual change of the local potential through depths of the gate dielectric provides quantitative electrical information about buried interfaces. Our results suggest that gate-tunable photoemission spectra with chemically specific information linked with local electrical properties opens new routes to elucidating operation of devices based especially on layered materials.