Combustion Synthesis and Polymer Doping of Metal Oxides for High-Performance Electronic Circuitry

Investigation on Atomic Bonding Structure of Solution-Processed Indium-Zinc-Oxide Semiconductors According to Doped Indium Content and Its Effects on the Transistor Performance

The atomic composition ratio of solution-processed oxide semiconductors is crucial in controlling the electrical performance of thin-film transistors (TFTs) because the crystallinity and defects of the random network structure of oxide semiconductors change critically with respect to the atomic composition ratio. Herein, the relationship between the film properties of nitrate precursor-based indium-zinc-oxide (IZO) semiconductors and electrical performance of solution-processed IZO TFTs with respect to the In molar ratio was investigated. The thickness, morphological characteristics, crystallinity, and depth profile of the IZO semiconductor film were measured to analyze the correlation between the structural properties of IZO film and electrical performances of the IZO TFT. In addition, the stoichiometric and electrical properties of the IZO semiconductor films were analyzed using film density, atomic composition profile, and Hall effect measurements. Based on the structural and stoichiometric results for the IZO semiconductor, the doping effect of the IZO film with respect to the In molar ratio was theoretically explained. The atomic bonding structure by the In doping in solution-processed IZO semiconductor and resulting increase in free carriers are discussed through a simple bonding model and band gap formation energy.

Atropine-Phosphotungestate Polymeric-Based Metal Oxide Nanoparticles for Potentiometric Detection in Pharmaceutical Dosage Forms

The new research presents highly conductive polymeric membranes with a large surface area to volume ratio of metal oxide nanoparticles that were used to determine atropine sulfate (AT) in commercial dosage forms. In sensing and biosensing applications, the nanomaterials zinc oxide (ZnONPs) and magnesium oxide (MgONPs) were employed as boosting potential electroactive materials. The electroactive atropine phosphotungstate (AT-PT) was created by combining atropine sulfate and phosphotungstic acid (PTA) and mixing it with polymeric polyvinyl chloride (PVC) with the plasticizer o-nitrophenyl octyl ether (o-NPOE). The modified sensors AT-PT-ZnONPs or AT-PT-MgONPs showed excellent selectivity and sensitivity for the measurements of atropine with a linear concentration range of 6.0 × 10⁻⁸ − 1.0 × 10⁻³ and 8.0 × 10⁻⁸ − 1.0 × 10⁻³ mol L⁻¹ with regression equations of E_(mV) = (56 ± 0.5) log [AT] − 294 and E_(mV) = (54 ± 0.5) log [AT] − 422 for AT-PT-NPs or AT-PT-MgONPs sensors, respectively. The AT-PT coated wire sensor, on the other hand, showed a Nernstian response at 4.0 × 10⁻⁶ − 1.0 × 10⁻³ mol L⁻¹ and a regression equation E_(mV) = (52.1 ± 0.2) log [AT] + 198. The methodology-recommended guidelines were used to validate the suggested modified potentiometric systems against various criteria.