Stimuli-Responsive Surface Ligands for Direct Lithography of Functional Inorganic Nanomaterials

Photothermal Laser Printing of Sub-Micrometer Crystalline ZnO Structures

During light-driven 3D additive manufacturing, an object represented in digital form is initially translated into a spatial distribution of light intensity (sequentially or in parallel), which then results in a spatial material distribution. To date, this process typically proceeds by photoexcitation of small functional molecules, leading to photochemically induced crosslinking of soft materials. Alternatively, thermal triggers can be employed, yet thermal processes are often slow and provide only low spatial localization. Nevertheless, sub-micrometer ZnO structures for functional microelectronic devices have recently been laser-printed. Herein, the photothermal laser-printing of ZnO is advanced by i) introducing single-crystalline rather than amorphous sub-micrometer ZnO shapes that crystallize in the hexagonal ZnO wurtzite structure, ii) employing dimethyl sulfoxide (DMSO) instead of water, enabling higher local process temperatures without micro-bubble formation, and iii) using substrates tailored for light absorption and heat management, resolving the challenge of light to heat conversion. Finally, the herein-demonstrated ZnO printing requires no post-processing and is a cleanroom-free technique for the fabrication of crystalline semiconductors.

Reductive pathways in molten inorganic salts enable colloidal synthesis of III-V semiconductor nanocrystals

Colloidal quantum dots, with their size-tunable optoelectronic properties and scalable synthesis, enable applications in which inexpensive high-performance semiconductors are needed. Synthesis science breakthroughs have been key to the realization of quantum dot technologies, but important group III-group V semiconductors, including colloidal gallium arsenide (GaAs), still cannot be synthesized with existing approaches. The high-temperature molten salt colloidal synthesis introduced in this work enables the preparation of previously intractable colloidal materials. We directly nucleated and grew colloidal quantum dots in molten inorganic salts by harnessing molten salt redox chemistry and using surfactant additives for nanocrystal shape control. Synthesis temperatures above 425°C are critical for realizing photoluminescent GaAs quantum dots, which emphasizes the importance of high temperatures enabled by molten salt solvents. We generalize the methodology and demonstrate nearly a dozen III-V solid-solution nanocrystal compositions that have not been previously reported.

Direct Photopatterning of Colloidal Quantum Dots with Electronically Optimized Diazirine Cross-Linkers

Colloidal quantum dots (QDs) with a wide color gamut and high luminescent efficiency are promising for next-generation electronic and photonic devices. However, precise and scalable patterning of QDs without degrading their properties and their integration into commercially relevant devices, such as digitally addressable QD light-emitting diode (QLED) displays, remain challenging. Here, we develop electronically optimized diazirine-based cross-linkers for nondestructive, direct photopatterning of QDs and, ultimately, building the active-matrix QLED displays. The key to the cross-linker design is the introduction of electron-donating substituents that permit the formation of ground-state singlet carbenes for air-stable and benign QD photopatterning. Under ambient conditions, these cross-linkers enable the patterning of heavy metal-free QDs at a resolution of over 13,000 pixels per inch using commercial i-line photolithography. The patterned QD layers fully preserved their optical and optoelectronic properties. Pixelated electroluminescent devices with patterned InP/ZnSe/ZnS QD layers show a peak external quantum efficiency of 15.3% and a maximum luminance of about 40,000 cd m-2, outperforming those made by existing QD patterning approaches. We further show the seamless integration of patterned QLEDs with thin-film transistor circuits and the fabrication of dual-color active-matrix displays. These results underscore the importance of designing photochemistry for QD patterning, and promise the implementation of direct photopatterning methods in manufacturing commercial QLED displays and other integrated QD device platforms.

Direct Optical Patterning of Metal-Organic Frameworks via Photoacid-Induced Etching

Metal-organic frameworks (MOFs) are a class of porous materials constructed from organic linkers and inorganic building blocks. Coordinative competition labilizes some MOFs under harsh chemical conditions because of their weak bonding. However, instability is not always a negative property of a material. In this study, we demonstrated the use of the acidic lability of MOFs for direct optical patterning. The controllable acid release from the photoacid generator at the exposed area causes bond cleavage between the linkers and metal ions/clusters, leading to solubility changes and pattern formation after development. This process avoids redundant steps and possible contamination in traditional photolithography, while maintaining the original properties of patterned MOFs. The preserved porosity and crystallinity promoted the development of MOFs for gas sensors and solid displays.

The Accurate Synthesis of a Multiscale Metallic Interface on Graphdiyne

The accurate construction of composite material systems containing graphdiyne (GDY) and other metallic materials has promoted the formation of innovative structures and practical applications in the fields of energy, catalysis, optoelectronics, and biomedicine. To fulfill the practical requirements, the precise formation of multiscale interfaces over a wide range, from single atoms to nanostructures, plays an important role in the optimization of the structural design and properties. The intrinsic correlations between the structure, synthesis process, characteristic properties, and device performance are systematically investigated. This review outlines the current research achievements regarding the controlled formation of multiscale metallic interfaces on GDY. Synthetic strategies for interface regulation, as well as the correlation between the structure and performance, are presented. Furthermore, innovative research ideas for the design and synthesis of functional metal-based materials loaded onto GDY-based substances are also provided, demonstrating the promising application potential of GDY-based materials.

Ligand-Assisted Direct Lithography of Upconverting and Avalanching Nanoparticles for Nonlinear Photonics

Upconverting nanoparticles (UCNPs) exhibit unique nonlinear optical properties that can be harnessed in microscopy, sensing, and photonics. However, forming high-resolution nano- and micropatterns of UCNPs with large packing fractions is still challenging. Additionally, there is limited understanding of how nanoparticle patterning chemistries are affected by the particle size. Here, we explore direct patterning chemistries for 6-18 nm Tm3+-, Yb3+/Tm3+-, and Yb3+/Er3+-based UCNPs using ligands that form either new ionic linkages or covalent bonds between UCNPs under ultraviolet (UV), electron-beam (e-beam), and near-infrared (NIR) exposure. We study the effect of UCNP size on these patterning approaches and find that 6 nm UCNPs can be patterned with compact ionic-based ligands. In contrast, patterning larger UCNPs requires long-chain, cross-linkable ligands that provide sufficient interparticle spacing to prevent irreversible aggregation upon film casting. Compared to approaches that use a cross-linkable liquid monomer, our patterning method limits the cross-linking reaction to the ligands bound on UCNPs deposited as a thin film. This highly localized photo-/electron-initiated chemistry enables the fabrication of densely packed UCNP patterns with high resolutions (∼1 μm with UV and NIR exposure; <100 nm with e-beam). Our upconversion NIR lithography approach demonstrates the potential to use inexpensive continuous-wave lasers for high-resolution 2D and 3D lithography of colloidal materials. The deposited UCNP patterns retain their upconverting, avalanching, and photoswitching behaviors, which can be exploited in patterned optical devices for next-generation UCNP applications.