Confined Chemical Etching for Electrochemical Machining with Nanoscale Accuracy

Ultrasonic-Assisted Electrochemical Nanoimprint Lithography: Forcing Mass Transfer to Enhance the Localized Etching Rate of GaAs

Electrochemical nanoimprint lithography (ECNL) has emerged as a promising technique for fabricating three-dimensional micro/nano-structures (3D-MNSs) directly on semiconductor wafers. This technique is based on a localized corrosion reaction induced by the contact potential across the metal/semiconductor boundaries. The anodic etching of semiconductor and the cathodic reduction of electron acceptors occur at the metal/semiconductor/electrolyte interface and the Pt mold surface, respectively. However, the etching rate is limited by the mass transfer of species in the ultrathin electrolyte layer between the mold and the workpiece. To overcome this challenge, we introduce the ultrasonics effect into the ECNL process to facilitate the mass exchange between the ultrathin electrolyte layer and the bulk solution, thereby improving the imprinting efficiency. Experimental investigations demonstrate a positive linear relationship between the reciprocal of the area duty ratio of the mold and the imprinting efficiency. Furthermore, the introduction of ultrasonics improves the imprinting efficiency by approximately 80 %, irrespective of the area duty ratio. The enhanced imprinting efficiency enables the fabrication of 3D-MNSs with higher aspect ratios, resulting in a stronger light trapping effect. These results indicate the prospective applications of ECNL in semiconductor functional devices, such as photoelectric detection and photovoltaics.

Concurrently Fabricating Precision Meso- and Microscale Cross-Scale Arrayed Metal Features and Components by Using Wire-Anode Scanning Electroforming Technique

In order to improve the thickness uniformity of the electroformed metal layer and components, a new electroforming technique is proposed-wire-anode scanning electroforming (WAS-EF). WAS-EF uses an ultrafine inert anode so that the interelectrode voltage/current is superimposed upon a very narrow ribbon-shaped area at the cathode, thus ensuring better localization of the electric field. The anode of WAS-EF is in constant motion, which reduces the effect of the current edge effect. The stirring paddle of WAS-EF can affect the fluid flow in the microstructure, and improve the mass transfer effect inside the structure. The simulation results show that, when the depth-to-width ratio decreases from 1 to 0.23, the depth of fluid flow in the microstructure can increase from 30% to 100%. Experimental results show that. Compared with the traditional electroforming method, the single metal feature and arrayed metal components prepared by WAS-EF are respectively improved by 15.5% and 11.4%.

Direct Nanomachining on Semiconductor Wafer By Scanning Electrochemical Microscopy

Scanning electrochemical microscopy (SECM) is one of the most important instrumental methods of modern electrochemistry due to its high spatial and temporal resolution. We introduced SECM into nanomachining by feeding the electrochemical modulations of the tip electrode back to the positioning system, and we demonstrated that SECM is a versatile nanomachining technique on semiconductor wafers using electrochemically induced chemical etching. The removal profile was correlated to the applied tip current when the tip was held stationary and when it was moving slowly (<20 μm s^-1 ), and it followed Faraday's law. Both regular and irregular nanopatterns were translated into a spatially distributed current by the homemade digitally controlled SECM instrument. The desired nanopatterns were "sculpted" directly on a semiconductor wafer by SECM direct-writing mode. The machining accuracy was controlled to the sub-micrometer and even nanometer scales. This advance is expected to play an important role in electrochemical nanomachining for 3D micro/nanostructures in the semiconductor industry.

Photoassisted Electrochemical Micropatterning of Gold Film

Electrochemical etching is a powerful and popular method for fabricating micropatterns on metal substrates for use in electronic devices, electrochemical sensors, and plasmonic substrates. In order to achieve micropatterning, either a prepatterned insulating layer (mask) or a scanning microelectrode is often required to selectively trigger electrochemical etching at the desired locations. In the present work, we employed a well-focused light beam to enable the photoassisted electrochemical etching of gold film with a spatial resolution close to the optical diffraction limit (∼300 nm). It was found that the simultaneous application of light irradiation and appropriate potential were critical for the oxidative dissolution (i.e., etching) of gold to occur. Superior controllability of light beam allowed for the direct-write micropatterning without the need of mask or probe. Etching kinetics and mechanism were also studied by monitoring the dynamic evolution of optical transparency with a conventional transmission bright-field microscope, together with characterizations on the as-obtained patterns with atomic force microscopy and electron microscopy. This study is anticipated to contribute a feasible method for the micropatterning of gold film with implications for nanoelectronics and electrochemical sensors.

Photoelectric effect accelerated electrochemical corrosion and nanoimprint processes on gallium arsenide wafers

Here we report photoelectric-effect-enhanced interfacial charge transfer reactions.

Here we report photoelectric-effect-enhanced interfacial charge transfer reactions. The electrochemical corrosion rate of n-type gallium arsenide (n-GaAs) induced by the contact potential at platinum (Pt) and GaAs boundaries can be accelerated by the photoelectric effect of n-GaAs. When a GaAs wafer is illuminated with a xenon light source, the electrons in the valence band of GaAs will be excited to the conduction band and then move to the Pt boundaries due to the different work functions of the two materials. This results in an enhanced contact electric field as well as an enlarged Pt/GaAs contact potential. Consequently, in the presence of electrolyte solution, the polarizations of both the Pt/solution interface and the GaAs/solution interface at the Pt/GaAs/solution 3-phase boundary are enhanced. If the accumulated electrons on the Pt side are removed by electron acceptors in the solution, anodic corrosion of GaAs will be accelerated strictly along the Pt/GaAs/solution 3-phase boundary. This photo-enhanced electrochemical phenomenon can increase the corrosion rate of GaAs and accelerate the process of electrochemical nanoimprint lithography (ECNL) on GaAs. The method opens an innovative, highly efficient, low-cost nanoimprint technique performed directly on semiconductors, and it has prospective applications in the semiconductor industry.

Reaction Layer Imaging Using Fluorescence Electrochemical Microscopy

The chemical confinement of a pH sensitive fluorophore to a thin-reaction layer adjacent to an electrode surface is explored as a potentially innovative route to improving the spatial resolution of fluorescence electrochemical microscopy. A thin layer opto-electrochemical cell is designed, facilitating the visualization of a carbon fiber (diameter 7.0 μm) electrochemical interface. Proton consumption is driven at the interface by the reduction of benzoquinone to hydroquinone and the resulting interfacial pH change is revealed using the fluorophore 8-hydoxypyrene-1,3,6-trisulfonic acid. It is demonstrated that the proton depletion zone may be constrained and controlled by the addition of a finite acid concentration to the system. Simulation of the resulting fluorescence intensity profiles is achieved on the basis of a finite difference model, with excellent agreement between the theoretical and experimental results.

Electrochemical micro/nano-machining: principles and practices

Micro/nano-machining (MNM) is becoming the cutting-edge of high-tech manufacturing because of the ever increasing industrial demands for super smooth surfaces and functional three-dimensional micro/nano-structures in miniaturized and integrate devices, and electrochemistry plays an irreplaceable role in MNM.