Tin-Substituted Chalcopyrite: An n-Type Sulfide with Enhanced Thermoelectric Performance

Rational Design of Cu Vacancies and Antisite Defects for Boosting the Thermoelectric Properties of CuGaTe2-Based Compounds

CuGaTe2-based compounds show great promise in the application for high-temperature thermoelectric power generation; however, its wide bandgap feature poses a great challenge for enhancing thermoelectric performance via structural defects modulation and doping the system. Herein, it is discovered that the presence of GaCu antisite defects in the CuGaTe2 compound promotes the formation of Cu vacancies, and vice versa, which tends to form the charge-neutral structure defects combination with one GaCu antisite defect and two Cu vacancies. The accumulation of Cu vacancies in the structure of the (Cu2Te)x(Ga2Te3)1-x compounds evolves into twins and stacking faults. This in conjunction with GaCu antisite defects intensify the point defects phonon scattering, yielding a dramatic reduction on lattice thermal conductivity from 6.95 W m-1 K-1 for the pristine CuGaTe2 sample to 2.98 W m-1 K-1 for the (Cu2Te)0.45(Ga2Te3)0.55 sample at room temperature. Furthermore, the high concentration of charge-neutral defects combination narrows the band gap and increases the carrier concentration, leading to an improved power factor of 1.58 mW/mK2 at 600 K for the (Cu2Te)0.49(Ga2Te3)0.51 sample, which is 41% higher than for the pristine CuGaTe2 sample. Consequently, the highest ZT value of 0.82 is achieved at 915 K for Cu0.015(Cu2Te)0.48(Ga2Te3)0.52, which represents an enhancement of about 22% over that of the pristine CuGaTe2 compound.

Theoretical Investigation of the Lattice Thermal Conductivities of II-IV-V2 Pnictide Semiconductors

Ternary pnictide semiconductors with II-IV-V2 stoichiometry hold potential as cost-effective thermoelectric materials with suitable electronic transport properties, but their lattice thermal conductivities (κ) are typically too high. Insights into their vibrational properties are therefore crucial to finding strategies to reduce κ and achieve improved thermoelectric performance. We present a theoretical exploration of the lattice thermal conductivities for a set of pnictide semiconductors with ABX2 composition (A = Zn, Cd; B = Si, Ge, Sn; and X = P, As) using machine-learning-based regression algorithms to extract force constants from a reduced number of density functional theory simulations and then solving the Boltzmann transport equation for phonons. Our results align well with available experimental data, decreasing the mean absolute error by ∼3 W m-1 K-1 with respect to the best previous set of theoretical predictions. Zn-based ternary pnictides have, on average, more than double the thermal conductivity of the Cd-based compounds. Anisotropic behavior increases with the mass difference between A and B cations, but while the nature of the anion does not affect the structural anisotropy, the thermal conductivity anisotropy is typically higher for arsenides than for phosphides. We identify compounds such as CdGeAs2, for which nanostructuring to an affordable range of particle sizes could lead to κ values low enough for thermoelectric applications.

A DFT approach to correlate the physical characteristics of novel chalcopyrites ASbN2(A = Li, Na) for green technology

Semiconductor chalcopyrite compounds have been a subject of research interest due to their diverse range of physical properties that have captured the attention of scientists. In this ongoing research, we have examined the physical characteristics of LiSbN2 and NaSbN2 chalcopyrites using DFT. The modified Becke-Johnson (mBJ) potential is utilized for the computation of electronic structures. The stability is attained with negative formation energies and optimization curves. A bandgap of 2.60 eV in LiSbN2 and 3.15 eV in NaSbN2 has been achieved, which is further endorsed by the density of states. An in-depth analysis of the optical properties unveils the potential utility of LiSbN2 and NaSbN2 in various photovoltaic devices, attributed to its pronounced absorption in the UV spectrum. The transport characteristics are also assessed through various transport characteristics. The large electrical conductivity and ZT values for both chalcopyrite compounds are attained. Due to their remarkable capability to convert heat into electricity, these materials display potential for use in thermoelectric devices.

The manipulation of natural mineral chalcopyrite CuFeS2via mechanochemistry: properties and thermoelectric potential

In this study, the properties of the natural mineral chalcopyrite CuFeS2 after mechanical activation in a planetary mill were studied. The intensity of mechanical activation was controlled by changing the revolutions of the mill in the range 100-600 min-1. A series of characterization techniques, such as XRD, SEM, TEM, TA (DTA, TG, and DTG), particle size analysis, and UV-vis spectroscopy was applied and reactivity studies were also performed. Several new features were revealed for the mechanically activated chalcopyrite, e.g. the poly-modal distribution of produced nanoparticles on the micrometer scale, agglomeration effects by prolonged milling, possibility to modify the shape of the particles, X-ray amorphization and a shift from a non-cubic (tetragonal) structure to pseudo-cubic structure. The thermoelectric response was evaluated on the "softly" compacted powder via the spark plasma sintering method (very short holding time, low sintering temperature, and moderate pressure) by measuring the Seebeck coefficient and electrical and thermal conductivity above room temperature. The milling process produced samples with lower resistivity compared to the original non-activated sample. The Seebeck data close to zero confirmed the "compensated" character of natural chalcopyrite, reflecting its close-to stoichiometric composition with low concentration of both n- and p-type charge carriers. Alternatively, an evident correlation between thermal conductivity and energy supply by milling was observed with the possibility of band gap manipulation, which is associated with the energy delivered by the milling procedure.

Copper-Based Diamond-like Thermoelectric Compounds: Looking Back and Stepping Forward

The research on thermoelectric (TE) materials has a long history. Holding the advantages of high elemental abundance, lead-free and easily tunable transport properties, copper-based diamond-like (CBDL) thermoelectric compounds have attracted extensive attention from the thermoelectric community. The CBDL compounds contain a large number of representative candidates for thermoelectric applications, such as CuInGa₂, Cu₂GeSe₃, Cu₃SbSe₄, Cu₁₂SbSe₁₃, etc. In this study, the structure characteristics and TE performances of typical CBDLs were briefly summarized. Several common synthesis technologies and effective strategies to improve the thermoelectric performances of CBDL compounds were introduced. In addition, the latest developments in thermoelectric devices based on CBDL compounds were discussed. Further developments and prospects for exploring high-performance copper-based diamond-like thermoelectric materials and devices were also presented at the end.