1
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Salles P, Guzman R, Tan H, Ramis M, Fina I, Machado P, Sánchez F, De Luca G, Zhou W, Coll M. Unfolding the Challenges To Prepare Single Crystalline Complex Oxide Membranes by Solution Processing. ACS APPLIED MATERIALS & INTERFACES 2024; 16:36796-36803. [PMID: 38967374 PMCID: PMC11261560 DOI: 10.1021/acsami.4c05013] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/26/2024] [Revised: 06/17/2024] [Accepted: 06/17/2024] [Indexed: 07/06/2024]
Abstract
The ability to prepare single crystalline complex oxide freestanding membranes has opened a new playground to access new phases and functionalities not available when they are epitaxially bound to the substrates. The water-soluble Sr3Al2O6 (SAO) sacrificial layer approach has proven to be one of the most promising pathways to prepare a wide variety of single crystalline complex oxide membranes, typically by high vacuum deposition techniques. Here, we present solution processing, also named chemical solution deposition (CSD), as a cost-effective alternative deposition technique to prepare freestanding membranes identifying the main processing challenges and how to overcome them. In particular, we compare three different strategies based on interface and cation engineering to prepare CSD (00l)-oriented BiFeO3 (BFO) membranes. First, BFO is deposited directly on SAO but forms a nanocomposite of Sr-Al-O rich nanoparticles embedded in an epitaxial BFO matrix because the Sr-O bonds react with the solvents of the BFO precursor solution. Second, the incorporation of a pulsed laser deposited La0.7Sr0.3MnO3 (LSMO) buffer layer on SAO prior to the BFO deposition prevents the massive interface reaction and subsequent formation of a nanocomposite but migration of cations from the upper layers to SAO occurs, making the sacrificial layer insoluble in water and withholding the membrane release. Finally, in the third scenario, a combination of LSMO with a more robust sacrificial layer composition, SrCa2Al2O6 (SC2AO), offers an ideal building block to obtain (001)-oriented BFO/LSMO bilayer membranes with a high-quality interface that can be successfully transferred to both flexible and rigid host substrates. Ferroelectric fingerprints are identified in the BFO film prior and after membrane release. These results show the feasibility to use CSD as alternative deposition technique to prepare single crystalline complex oxide membranes widening the range of available phases and functionalities for next-generation electronic devices.
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Affiliation(s)
- Pol Salles
- Institut
de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus UAB, 08193 Bellaterra, Spain
| | - Roger Guzman
- School
of Physical Sciences, University of Chinese
Academy of Sciences, Beijing 100049, China
| | - Huan Tan
- Institut
de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus UAB, 08193 Bellaterra, Spain
| | - Martí Ramis
- Institut
de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus UAB, 08193 Bellaterra, Spain
| | - Ignasi Fina
- Institut
de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus UAB, 08193 Bellaterra, Spain
| | - Pamela Machado
- Institut
de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus UAB, 08193 Bellaterra, Spain
| | - Florencio Sánchez
- Institut
de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus UAB, 08193 Bellaterra, Spain
| | - Gabriele De Luca
- Institut
de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus UAB, 08193 Bellaterra, Spain
| | - Wu Zhou
- School
of Physical Sciences, University of Chinese
Academy of Sciences, Beijing 100049, China
| | - Mariona Coll
- Institut
de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus UAB, 08193 Bellaterra, Spain
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2
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Liu X, Tu J, Fang YW, Xi G, Li H, Wu R, Liu X, Lu D, He J, Zhang J, Tian J, Zhang L. Colossal Ferroelectric Photovoltaic Effect in Inequivalent Double-Perovskite Bi 2FeMnO 6 Thin Films. J Am Chem Soc 2024; 146:13934-13948. [PMID: 38741463 DOI: 10.1021/jacs.4c01702] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/16/2024]
Abstract
Double perovskite films have been extensively studied for ferroelectric order, ferromagnetic order, and photovoltaic effects. The customized ion combinations and ordered ionic arrangements provide unique opportunities for bandgap engineering. Here, a synergistic strategy to induce chemical strain and charge compensation through inequivalent element substitution is proposed. A-site substitution of the barium ion is used to modify the chemical valence and defect density of the two B-site elements in Bi2FeMnO6 double perovskite epitaxial thin films. We dramatically increased the ferroelectric photovoltaic effect to ∼135.67 μA/cm2 from 30.62 μA/cm2, which is the highest in ferroelectric thin films with a thickness of less than 100 nm under white-light LED irradiation. More importantly, the ferroelectric polarization can effectively improve the photovoltaic efficiency of more than 5 times. High-resolution HAADF-STEM, synchrotron-based X-ray diffraction and absorption spectroscopy, and DFT calculations collectively demonstrate that inequivalent ion plays a dual role of chemical strain (+1.92 and -1.04 GPa) and charge balance, thereby introducing lattice distortion effects. The reduction of the oxygen vacancy density and the competing Jahn-Teller distortion of the oxygen octahedron are the main phenomena of the change in electron-orbital hybridization, which also leads to enhanced ferroelectric polarization values and optical absorption. The inequivalent strategy can be extended to other double perovskite systems and applied to other functional materials, such as photocatalysis for efficient defect control.
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Affiliation(s)
- Xudong Liu
- Institute for Advanced Materials Technology, University of Science and Technology Beijing, Beijing 100083, China
| | - Jie Tu
- Institute for Advanced Materials Technology, University of Science and Technology Beijing, Beijing 100083, China
| | - Yue-Wen Fang
- Fisika Aplikatua Saila, Gipuzkoako Ingeniaritza Eskola, University of the Basque Country (UPV/EHU), Europa Plaza 1 Donostia/San Sebastián 20018, Spain
- Centro de Física de Materiales (CSIC-UPV/EHU), Manuel de Lardizabal Pasealekua 5 Donostia/San Sebastián 20018, Spain
| | - Guoqiang Xi
- Institute for Advanced Materials Technology, University of Science and Technology Beijing, Beijing 100083, China
| | - Hangren Li
- Institute for Advanced Materials Technology, University of Science and Technology Beijing, Beijing 100083, China
| | - Rong Wu
- Institute for Advanced Materials Technology, University of Science and Technology Beijing, Beijing 100083, China
| | - Xiuqiao Liu
- Institute for Advanced Materials Technology, University of Science and Technology Beijing, Beijing 100083, China
| | - Dongfei Lu
- Institute for Advanced Materials Technology, University of Science and Technology Beijing, Beijing 100083, China
| | - Jiushe He
- School of Materials and Energy, or Electron Microscopy Centre of Lanzhou University, Lanzhou University, Lanzhou 730000, China
| | - Junwei Zhang
- School of Materials and Energy, or Electron Microscopy Centre of Lanzhou University, Lanzhou University, Lanzhou 730000, China
| | - Jianjun Tian
- Institute for Advanced Materials Technology, University of Science and Technology Beijing, Beijing 100083, China
| | - Linxing Zhang
- Institute for Advanced Materials Technology, University of Science and Technology Beijing, Beijing 100083, China
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3
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Chen HY, Jiang YS, Chuang CH, Mo CL, Wang TY, Lin HC, Chen MJ. Impact of asymmetric electrodes on ferroelectricity of sub-10 nm HZO thin films. NANOTECHNOLOGY 2023; 35:105201. [PMID: 37995361 DOI: 10.1088/1361-6528/ad0f52] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/06/2023] [Accepted: 11/23/2023] [Indexed: 11/25/2023]
Abstract
In this study, platinum (Pt) and tungsten (W), two materials with dissimilar coefficients of thermal expansion (CTE) and work functions (WF), are used as the top electrode (TE) and the bottom electrode (BE) in metal/ferroelectric/metal (MFM) structures to explore the ferroelectricity of hafnium zirconium oxide (HZO) with a thickness less than 10 nm. The electrical measurements indicate that a higher CTE mismatch between HZO and TE/BE is beneficial for enhancing the ferroelectric properties of nanoscale HZO thin films. The different WFs of TE and BE generate a built-in electric field in the HZO layer, leading to shifts in the hysteresis loops and the capacitance-voltage characteristics. The structural characterizations reveal that the preferred formation of the orthorhombic phase in HZO is dominated by the W BE. The device in which W is used as the TE and BE (the W/HZO/W MFM structure) presents the optimal ferroelectric performance of a high remanent polarization (2Pr= 55.2μC cm-2). The presence of tungsten oxide (WOx) at the W/HZO interfaces, as revealed by high-resolution transmission microscopy, is also responsible for the enhancement of ferroelectric properties. This study demonstrates the significant effects of different CTEs and WFs of TE and BE on the properties of ferroelectric HZO thin films.
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Affiliation(s)
- Hsing-Yang Chen
- Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan, ROC
| | - Yu-Sen Jiang
- Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan, ROC
| | - Chun-Ho Chuang
- Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan, ROC
| | - Chi-Lin Mo
- Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan, ROC
| | - Ting-Yun Wang
- Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan, ROC
| | - Hsin-Chih Lin
- Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan, ROC
| | - Miin-Jang Chen
- Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan, ROC
- Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, Taiwan, ROC
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4
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Thien GSH, Chan KY, Marlinda AR, Yap BK. Polymer-enhanced perovskite oxide-based photocatalysts: a review. NANOSCALE 2023; 15:19039-19061. [PMID: 37987540 DOI: 10.1039/d3nr03874b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/22/2023]
Abstract
Oxide perovskites (OPs) have emerged as promising photocatalysts for numerous applications, such as energy conversion, renewable fuels, and environmental remediation. Although OPs are gaining traction, their efficacies are still hindered by low charge carrier mobility and poor stability. This study investigated the function of polymers actively participating in OP structures to improve the overall characteristics. An overview of the polymer-enhanced perovskite oxide photocatalyst (PEPOP) field was effectively reviewed. These PEPOPs were demonstrated in photovoltaics, pollutant degradation, and gas conversion and reduction. Nonetheless, additional research is needed to explore the potential of PEPOPs to establish their efficacy in photocatalytic applications. The technological improvements of PEPOPs were hindered by significant challenges related to stability and sensitivity. The urgency of this review was apparent due to the fast-paced nature of research in the field of photocatalysis. Recent breakthroughs and emerging applications highlight the need for a comprehensive overview of PEPOPs and their enhanced catalytic capabilities. Consequently, a broad outlook was provided for the current state of PEPOP-related studies, highlighting the potential of these materials for future applications.
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Affiliation(s)
- Gregory Soon How Thien
- Centre for Advanced Devices and Systems, Faculty of Engineering, Multimedia University, Persiaran Multimedia, 63100 Cyberjaya, Selangor, Malaysia.
| | - Kah-Yoong Chan
- Centre for Advanced Devices and Systems, Faculty of Engineering, Multimedia University, Persiaran Multimedia, 63100 Cyberjaya, Selangor, Malaysia.
| | - Ab Rahman Marlinda
- Nanotechnology and Catalysis Research Centre (NANOCAT), Universiti Malaya, 50603, Kuala Lumpur, Malaysia
| | - Boon Kar Yap
- Electronic and Communications Department, College of Engineering, Universiti Tenaga Nasional, 43000 Kajang, Selangor, Malaysia
- Institute of Sustainable Energy, Universiti Tenaga Nasional, 43000 Kajang, Selangor, Malaysia
- International School of Advanced Materials, South China University of Technology, 381 Wushan Road, Tianhe District, Guangzhou, Guangdong, P. R. China
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5
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Salles P, Machado P, Yu P, Coll M. Chemical synthesis of complex oxide thin films and freestanding membranes. Chem Commun (Camb) 2023; 59:13820-13830. [PMID: 37921594 DOI: 10.1039/d3cc03030j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/04/2023]
Abstract
Oxides offer unique physical and chemical properties that inspire rapid advances in materials chemistry to design and nanoengineer materials compositions and implement them in devices for a myriad of applications. Chemical deposition methods are gaining attention as a versatile approach to develop complex oxide thin films and nanostructures by properly selecting compatible chemical precursors and designing an accurate cost-effective thermal treatment. Here, upon describing the basics of chemical solution deposition (CSD) and atomic layer deposition (ALD), some examples of the growth of chemically-deposited functional complex oxide films that can have applications in energy and electronics are discussed. To go one step further, the suitability of these techniques is presented to prepare freestanding complex oxides which can notably broaden their applications. Finally, perspectives on the use of chemical methods to prepare future materials are given.
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Affiliation(s)
- Pol Salles
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC) Campus UAB, 08193 Bellaterra (Barcelona), Spain.
| | - Pamela Machado
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC) Campus UAB, 08193 Bellaterra (Barcelona), Spain.
| | - Pengmei Yu
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC) Campus UAB, 08193 Bellaterra (Barcelona), Spain.
| | - Mariona Coll
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC) Campus UAB, 08193 Bellaterra (Barcelona), Spain.
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6
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Cheng X, Xi G, Fang YW, Ding J, Tian J, Zhang L. Chemical and interfacial design in the visible-light-absorbing ferroelectric thin films. Ann Ital Chir 2023. [DOI: 10.1016/j.jeurceramsoc.2023.02.025] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/13/2023]
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7
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Grover S, Butler KT, Waghmare UV, Grau‐Crespo R. Co‐Substituted BiFeO
3
: Electronic, Ferroelectric, and Thermodynamic Properties from First Principles. ADVANCED THEORY AND SIMULATIONS 2022. [DOI: 10.1002/adts.202200673] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/19/2022]
Affiliation(s)
- Shivani Grover
- Department of Chemistry University of Reading Whiteknights Reading RG6 6DX UK
| | - Keith T. Butler
- Materials Research Institute, School of Engineering and Materials Science Queen Mary University of London Mile End Road London E1 4NS UK
| | - Umesh V. Waghmare
- Theoretical Sciences Unit, Jawaharlal Nehru Center for Advanced Scientific Research Bangalore Karnataka 560064 India
| | - Ricardo Grau‐Crespo
- Department of Chemistry University of Reading Whiteknights Reading RG6 6DX UK
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8
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Tan H, Castro G, Lyu J, Loza-Alvarez P, Sánchez F, Fontcuberta J, Fina I. Control of up-to-down/down-to-up light-induced ferroelectric polarization reversal. MATERIALS HORIZONS 2022; 9:2345-2352. [PMID: 35968715 DOI: 10.1039/d2mh00644h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Light control of ferroelectric polarization is of interest for the exploitation of ferroelectric thin films in ultrafast data storage and logic functionalities. The rapidly oscillating electric field of light absorbed in a ferroelectric layer can suppress its polarization but cannot selectively reverse its direction. Here we take advantage of the built-in asymmetry at ferroelectric/electrode interfaces to break the up/down symmetry in uniaxial ferroelectrics to promote polarization reversal under illumination. It is shown that appropriate ferroelectric/metal structures allow the direction of the imprint electric field to be selected, which is instrumental for polarization reversal. This ability is further exploited by demonstrating the optical control of the resistance states in a ferroelectric capacitor.
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Affiliation(s)
- Huan Tan
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra, 08193, Barcelona, Spain.
| | - Gustavo Castro
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, 08860, Castelldefels, Barcelona, Spain
| | - Jike Lyu
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra, 08193, Barcelona, Spain.
| | - Pablo Loza-Alvarez
- ICFO-Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology, 08860, Castelldefels, Barcelona, Spain
| | - Florencio Sánchez
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra, 08193, Barcelona, Spain.
| | - Josep Fontcuberta
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra, 08193, Barcelona, Spain.
| | - Ignasi Fina
- Institut de Ciència de Materials de Barcelona (ICMAB-CSIC), Campus UAB, Bellaterra, 08193, Barcelona, Spain.
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9
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Zhang S, Wang J, Wen S, Jiang M, Xiao H, Ding X, Wang N, Li M, Zu X, Li S, Yam C, Huang B, Qiao L. Approaching Charge Separation Efficiency to Unity without Charge Recombination. PHYSICAL REVIEW LETTERS 2021; 126:176401. [PMID: 33988439 DOI: 10.1103/physrevlett.126.176401] [Citation(s) in RCA: 9] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/16/2020] [Revised: 10/30/2020] [Accepted: 03/25/2021] [Indexed: 06/12/2023]
Abstract
Improving the efficiency of charge separation (CS) and charge transport (CT) is essential for almost all optoelectronic applications, yet its maximization remains a big challenge. Here we propose a conceptual strategy to achieve CS efficiency close to unity and simultaneously avoid charge recombination (CR) during CT in a ferroelectric polar-discontinuity (PD) superlattice structure, as demonstrated in (BaTiO_{3})_{m}/(BiFeO_{3})_{n}, which is fundamentally different from the existing mechanisms. The competition of interfacial dipole and ferroelectric PD induces opposite band bending in BiFeO_{3} and BaTiO_{3} sublattices. Consequently, the photoexcited electrons (e) and holes (h) in individual sublattices move forward to the opposite interfaces forming electrically isolated e and h channels, leading to a CS efficiency close to unity. Importantly, the spatial isolation of conduction channels in (BaTiO_{3})_{m}/(BiFeO_{3})_{n} enable suppression of CR during CT, thus realizing a unique band diagram for spatially orthogonal CS and CT. Remarkably, (BaTiO_{3})_{m}/(BiFeO_{3})_{n} can maintain a high photocurrent and large band gap simultaneously. Our results provide a fascinating illumination for designing artificial heterostructures toward ideal CS and CT in optoelectronic applications.
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Affiliation(s)
- Sa Zhang
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Jianfeng Wang
- Beijing Computational Science Research Center, Beijing, 100193, China
| | - Shizheng Wen
- Beijing Computational Science Research Center, Beijing, 100193, China
| | - Ming Jiang
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Haiyan Xiao
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Xiang Ding
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Ning Wang
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Menglu Li
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Xiaotao Zu
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Sean Li
- School of Materials, University of New South Wales, Sydney 2052, New South Wales Australia
| | - ChiYung Yam
- Beijing Computational Science Research Center, Beijing, 100193, China
| | - Bing Huang
- Beijing Computational Science Research Center, Beijing, 100193, China
- Department of Physics, Beijing Normal University, Beijing 100875, China
| | - Liang Qiao
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
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10
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Nanoscale Piezoelectric Properties and Phase Separation in Pure and La-Doped BiFeO 3 Films Prepared by Sol-Gel Method. MATERIALS 2021; 14:ma14071694. [PMID: 33808266 PMCID: PMC8037021 DOI: 10.3390/ma14071694] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/20/2021] [Revised: 03/21/2021] [Accepted: 03/25/2021] [Indexed: 11/17/2022]
Abstract
Pure BiFeO3 (BFO) and doped Bi0.9La0.1FeO3 (BLFO) thin films were prepared on Pt/TiO2/SiO2/Si substrates by a modified sol–gel technique using a separate hydrolysis procedure. The effects of final crystallization temperature and La doping on the phase structure, film morphology, and nanoscale piezoelectric properties were investigated. La doping and higher crystallization temperature lead to an increase in the grain size and preferred (102) texture of the films. Simultaneously, a decrease in the average effective piezoelectric coefficient (about 2 times in La-doped films) and an increase in the area of surface non-polar phase (up to 60%) are observed. Phase separation on the films’ surface is attributed to either a second phase or to a non-polar perovskite phase at the surface. As compared with undoped BFO, La-doping leads to an increase in the average grain size and self-polarization that is important for future piezoelectric applications. It is shown that piezoelectric activity is directly related to the films’ microstructructure, thus emphasizing the role of annealing conditions and La-doping that is frequently used to decrease the leakage current in BFO-based materials.
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11
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Yang M, Li S, Wang Y, Qi H, Lin K, Li Q, Xing X. Enhanced ferroelectricity in NaNbO 3–LaCoO 3:Mn epitaxial thin film. Inorg Chem Front 2021. [DOI: 10.1039/d1qi01041g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
A (001)-oriented NaNbO3–LaCoO3:Mn ferroelectric thin film with enhanced tetragonal distortion and large remanent polarization (31 μC cm−2) achieved by chemical modification was successfully deposited on a SrRuO3-buffered LaAlO3 substrate.
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Affiliation(s)
- Mingdi Yang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
| | - Shan Li
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
| | - Yilin Wang
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
- Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University, 30 South Puzhu Road, Nanjing 211816, China
| | - He Qi
- Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
| | - Kun Lin
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
| | - Qiang Li
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
| | - Xianran Xing
- Beijing Advanced Innovation Center for Materials Genome Engineering, Institute of Solid State Chemistry, Department of Physical Chemistry, University of Science and Technology Beijing, Beijing 100083, China
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12
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Menéndez C, Cazorla C. Giant Thermal Enhancement of the Electric Polarization in Ferrimagnetic BiFe_{1-x}Co_{x}O_{3} Solid Solutions near Room Temperature. PHYSICAL REVIEW LETTERS 2020; 125:117601. [PMID: 32975967 DOI: 10.1103/physrevlett.125.117601] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/05/2020] [Accepted: 08/20/2020] [Indexed: 06/11/2023]
Abstract
Thermal excitations typically reduce the electric polarization in ferroelectric materials. Here, we show by means of first-principles calculations that multiferroic BiFe_{1-x}Co_{x}O_{3} solid solutions with 0.25≤x≤0.50 (BFCO) represent a noteworthy exception to this behavior. In particular, we find that, at room temperature and for moderate pressures of 0.1-1.0 GPa, depending on the composition, the electric polarization of bulk BFCO increases by ∼150%. The origin of such an exceptional behavior is a phase transformation involving a low-T rhombohedral (R) phase and a high-T supertetragonal (T) phase. Both R and T phases are ferrimagnetic near room temperature with an approximate net magnetization of 0.13 μ_{B} per formula unit. Contrary to what occurs in either bulk BiFeO_{3} or BiCoO_{3}, the T phase is stabilized over the R by increasing temperature due to its higher vibrational entropy. This extraordinary T-induced R→T phase transition is originated by polar phonon modes that involve concerted displacements of transition-metal and oxygen ions.
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Affiliation(s)
- César Menéndez
- School of Materials Science and Engineering, UNSW Sydney, Sydney, New South Wales 2052, Australia
| | - Claudio Cazorla
- Departament de Física, Universitat Politècnica de Catalunya, Campus Nord B4-B5, E-08034 Barcelona, Spain
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13
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Wei L, Li C, Guo J, Guan L, Wang Y, Liu B. Giant optical absorption and ferroelectric polarization of BiCoO 2S perovskite oxysulfide by first principles prediction. Phys Chem Chem Phys 2020; 22:11382-11391. [PMID: 32374305 DOI: 10.1039/d0cp00057d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Obtaining an ideal ferroelectric photovoltaic (FE-PV) material with a narrow bandgap and a large ferroelectric polarization value can enable us to achieve great practical FE-PV performance. By the introduction of sulfur into the tetragonal BiCoO3 perovskite with a C-type antiferromagnetic ordering, it is found that the bandgap of BiCoO2S decreases significantly (about 1.2 eV) while maintaining a large polarization value (about 1.86 C m-2) that is similar to the value of 1.793 C m-2 of BiCoO3. Most noteworthy is that the optical absorption of BiCoO2S is remarkably higher than those of BiCoO3 and other FE-PV materials. The decrease of the BiCoO2S bandgap originates from the movement of Co 3d states to a low-energy position due to the reduction of the Co ionicity when the less electronegative sulfur is introduced into BiCoO3 to substitute oxygen. The narrow bandgap and the high optical absorption of the BiCoO2S films grown on different substrates are favorable for FE-PV applications. In addition, the bandgap of BiCoO2S can be modulated by the doping amount of sulfur, which can help us fabricate multilayer FE-PV devices based on different bandgaps from different layers.
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Affiliation(s)
- Lijing Wei
- Key Laboratory of High-precision Computation and Application of Quantum Field Theory of Hebei Province, College of Physics Science and Technology, Hebei University, Baoding, 071002, P. R. China.
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14
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He C, Liu G, Zhao H, Zhao K, Ma Z, An X. Inorganic photovoltaic cells based on BiFeO 3: spontaneous polarization, lattice matching, light polarization and their relationship with photovoltaic performance. Phys Chem Chem Phys 2020; 22:8658-8666. [PMID: 32270851 DOI: 10.1039/d0cp01176b] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/29/2022]
Abstract
Inorganic ferroelectric perovskite oxides are more stable than hybrid perovskites. However, their solar energy harvesting efficiency is not so good. Here, by constructing a series of BiFeO3-based devices (solar cells), we investigated three factors that influence the photovoltaic performance, namely, spontaneous polarization, terminated ion species in the interface between BiFeO3 and the electrode, and polarized light irradiation. This work was carried out under the framework of the density functional theory combined with the non-equilibrium Green's function theory under a built-in electric field or finite bias. The results showed that (1) the photocurrent is larger only under a suitable electronic band gap rather than larger spontaneous polarization; (2) the photocurrent reaches the largest value in the Bi3+ ion-terminated interface than in the case of Fe3+ or O2- with the SrTiO3 electrode; (3) the photocurrent can be largely enhanced if the polarized direction of the monochromatic light is perpendicular to the spontaneous polarization direction. These results would deepen the understanding of some experimental results of BiFeO3-based solar cells.
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Affiliation(s)
- Chao He
- Department of Physics, School of Science, Hebei University of Science and Technology, Shijiazhuang, 050018, Hebei, China.
| | - Guocai Liu
- Department of Physics, School of Science, Hebei University of Science and Technology, Shijiazhuang, 050018, Hebei, China.
| | - Huiyan Zhao
- Department of Physics and Hebei Advanced Thin Film Laboratory, Hebei Normal University, Shijiazhuang, 050024, Hebei, China
| | - Kun Zhao
- Department of Physics, School of Science, Hebei University of Science and Technology, Shijiazhuang, 050018, Hebei, China.
| | - Zuju Ma
- School of Materials Science and Engineering, Anhui University of Technology, Maanshan 243002, Anhui, China.
| | - Xingtao An
- Department of Physics, School of Science, Hebei University of Science and Technology, Shijiazhuang, 050018, Hebei, China.
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15
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Bein NS, Machado P, Coll M, Chen F, Makarovic M, Rojac T, Klein A. Electrochemical Reduction of Undoped and Cobalt-Doped BiFeO 3 Induced by Water Exposure: Quantitative Determination of Reduction Potentials and Defect Energy Levels Using Photoelectron Spectroscopy. J Phys Chem Lett 2019; 10:7071-7076. [PMID: 31664832 DOI: 10.1021/acs.jpclett.9b02706] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
The interaction of BiFeO3 and Co-doped BiFeO3 thin-film surfaces with water vapor is examined using photoelectron spectroscopy. Water exposure results in an upward shift of the Fermi energy, which is limited by the reduction of Bi and Fe in undoped BiFeO3 and by the reduction of Co in oxidized Co-doped BiFeO3. The results highlight the importance of surface potential changes induced by the interaction of solid surfaces with water and the ability of photoelectron spectroscopy to quantitatively determine electrochemical reduction potentials and defect energy levels.
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Affiliation(s)
- Nicole S Bein
- Department of Materials and Earth Sciences, Electronic Structure of Materials , Technische Universität Darmstadt , Otto-Berndt-Straße 3 , 64287 Darmstadt , Germany
| | - Pamela Machado
- Institut de Ciencia de Materials de Barcelona, ICMAB-CSIC , 08193 Barcelona , Spain
| | - Mariona Coll
- Institut de Ciencia de Materials de Barcelona, ICMAB-CSIC , 08193 Barcelona , Spain
| | - Feng Chen
- High Magnetic Field Lab , Hefei Institutes of Physical Science, Chinese Academy of Sciences (CAS) , Hefei 230031 , China
| | - Maja Makarovic
- Electronic Ceramics , Jozef Stefan Institute , Jamova 39 , 1000 Ljubljana , Slovenia
| | - Tadej Rojac
- Electronic Ceramics , Jozef Stefan Institute , Jamova 39 , 1000 Ljubljana , Slovenia
| | - Andreas Klein
- Department of Materials and Earth Sciences, Electronic Structure of Materials , Technische Universität Darmstadt , Otto-Berndt-Straße 3 , 64287 Darmstadt , Germany
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16
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Wang J, Luo L, Han C, Yun R, Tang X, Zhu Y, Nie Z, Zhao W, Feng Z. The Microstructure, Electric, Optical and Photovoltaic Properties of BiFeO 3 Thin Films Prepared by Low Temperature Sol⁻Gel Method. MATERIALS 2019; 12:ma12091444. [PMID: 31058843 PMCID: PMC6539945 DOI: 10.3390/ma12091444] [Citation(s) in RCA: 9] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/30/2019] [Revised: 04/26/2019] [Accepted: 04/29/2019] [Indexed: 11/16/2022]
Abstract
Ferroelectrics have recently attracted attention as a candidate class of materials for use in photovoltaic devices due to their abnormal photovoltaic effect. However, the current reported efficiency is still low. Hence, it is urgent to develop narrow-band gap ferroelectric materials with strong ferroelectricity by low-temperature synthesis. In this paper, the perovskite bismuth ferrite BiFeO3 (BFO) thin films were fabricated on SnO2: F (FTO) substrates by the sol-gel method and they were rapidly annealed at 450, 500 and 550 °C, respectively. The microstructure and the chemical state's evolution with annealing temperature were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS), and the relationship between the microstructure and electric, optical and photovoltaic properties were studied. The XRD, SEM and Raman results show that a pure phase BFO film with good crystallinity is obtained at a low annealing temperature of 450 °C. As the annealing temperature increases, the film becomes more uniform and has an improved crystallinity. The XPS results show that the Fe3+/Fe2+ ratio increases and the ratio of oxygen vacancies/lattice oxygen decreases with increasing annealing temperature, which results in the leakage current gradually being reduced. The band gap is reduced from 2.68 to 2.51 eV due to better crystallinity. An enhanced photovoltaic effect is observed in a 550 °C annealed BFO film with a short circuit current of 4.58 mA/cm2 and an open circuit voltage of 0.15 V, respectively.
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Affiliation(s)
- Jiaxi Wang
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China.
| | - Li Luo
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China.
| | - Chunlong Han
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China.
| | - Rui Yun
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China.
| | - Xingui Tang
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China.
| | - Yanjuan Zhu
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China.
| | - Zhaogang Nie
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China.
| | - Weiren Zhao
- School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China.
| | - Zhechuan Feng
- School of Physical Science & Technology, Laboratory of Optoelectronic Materials & Detection Technology, Guangxi Key Laboratory for the Relativistic Astrophysics, Guangxi University, Nanning 530004, China.
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