Cu–In–S/ZnS Quantum Dots Embedded in Polyvinylpyrrolidone (PVP) Solids for White Light-Emitting Diodes (LEDs)

A Review on Multiple I-III-VI Quantum Dots: Preparation and Enhanced Luminescence Properties

I-III-VI type QDs have unique optoelectronic properties such as low toxicity, tunable bandgaps, large Stokes shifts and a long photoluminescence lifetime, and their emission range can be continuously tuned in the visible to near-infrared light region by changing their chemical composition. Moreover, they can avoid the use of heavy metal elements such as Cd, Hg and Pb and highly toxic anions, i.e., Se, Te, P and As. These advantages make them promising candidates to replace traditional binary QDs in applications such as light-emitting diodes, solar cells, photodetectors, bioimaging fields, etc. Compared with binary QDs, multiple QDs contain many different types of metal ions. Therefore, the problem of different reaction rates between the metal ions arises, causing more defects inside the crystal and poor fluorescence properties of QDs, which can be effectively improved by doping metal ions (Zn²⁺, Mn²⁺ and Cu⁺) or surface coating. In this review, the luminous mechanism of I-III-VI type QDs based on their structure and composition is introduced. Meanwhile, we focus on the various synthesis methods and improvement strategies like metal ion doping and surface coating from recent years. The primary applications in the field of optoelectronics are also summarized. Finally, a perspective on the challenges and future perspectives of I-III-VI type QDs is proposed as well.

Integration of ternary I-III-VI quantum dots in light-emitting diodes

Ternary I-III-VI quantum dots (TQDs) are semiconductor nanomaterials that have been gradually incorporated in the fabrication of light-emitting diodes (LEDs) over the last 10 years due to their physicochemical and photoluminescence properties, such as adequate quantum yield values, tunable wavelength emission, and easy synthesis strategies, but mainly because of their low toxicity that allows them to be excellent candidates to compete with conventional Cd-Pb-based QDs. This review addresses the different strategies to obtain TQDs and how synthesis conditions influence their physicochemical properties, followed by the LEDs parameters achieved using TQDs. The second part of the review summarizes how TQDs are integrated into LEDs and white light-emitting diodes (WLEDs). Furthermore, an insight into the state-of-the-art LEDs development using TQDs, including its advantages and disadvantages and the challenges to overcome, is presented at the end of the review.

Luminescence modulation, near white light emission, selective luminescence sensing, and anticounterfeiting via a series of Ln-MOFs with a π-conjugated and uncoordinated lewis basic triazolyl ligand

A series of Ln-MOFs with π-conjugated and uncoordinated lewis basic triazolyl ligand have luminescence modulation, near white light emission, selective luminescence sensing, and anticounterfeiting.

Simple Synthesis of CuInS2/ZnS Core/Shell Quantum Dots for White Light-Emitting Diodes

In this study, the CuInS2/ZnS core/shell quantum dots (QDs) were prepared via simple and environmentally friendly solvothermal synthesis and were used as phosphors for white light-emitting diodes (WLEDs). The surface defect of the CuInS2 core QDs were passivated by the ZnS shell by forming CuInS2/ZnS core/shell QDs. By adjusting the Cu/In ratio and the nucleation temperature, the photoluminescence (PL) peak of the CuInS2 QDs was tunable in a range of 651-775 nm. After coating the ZnS layer and modifying oleic acid ligands, the PL quantum yield increased to 85.06%. The CuInS2/ZnS QD powder thermal stability results showed that the PL intensity of the QDs remained 91% at 100°C for 10 min. High color rendering index values (CRI, 90) and correlated color temperature of 4360 K for the efficient WLEDs were fabricated using CuInS2/ZnS QDs and (Ba,Sr)2SiO4:Eu2+ as color converters in combination with a blue GaN light-emitting diode chip.

Colloidal Phase-Change Materials: Synthesis of Monodisperse GeTe Nanoparticles and Quantification of Their Size-Dependent Crystallization

Phase-change memory materials refer to a class of materials that can exist in amorphous and crystalline phases with distinctly different electrical or optical properties, as well as exhibit outstanding crystallization kinetics and optimal phase transition temperatures. This paper focuses on the potential of colloids as phase-change memory materials. We report a novel synthesis for amorphous GeTe nanoparticles based on an amide-promoted approach that enables accurate size control of GeTe nanoparticles between 4 and 9 nm, narrow size distributions down to 9-10%, and synthesis upscaling to reach multigram chemical yields per batch. We then quantify the crystallization phase transition for GeTe nanoparticles, employing high-temperature X-ray diffraction, differential scanning calorimetry, and transmission electron microscopy. We show that GeTe nanoparticles crystallize at higher temperatures than the bulk GeTe material and that crystallization temperature increases with decreasing size. We can explain this size-dependence using the entropy of crystallization model and classical nucleation theory. The size-dependences quantified here highlight possible benefits of nanoparticles for phase-change memory applications.

Synthesis of graphene quantum dot/metal–organic framework nanocomposites as yellow phosphors for white light-emitting diodes

Graphene quantum dots (GQDs) and a metal–organic framework were assembled to form a nanocomposite for solving the GQDs’ fluorescence quenching problem in WLEDs.