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Vekilova OY, Beyer DC, Bhat S, Farla R, Baran V, Simak SI, Kohlmann H, Häussermann U, Spektor K. Formation and Polymorphism of Semiconducting K 2SiH 6 and Strategy for Metallization. Inorg Chem 2023; 62:8093-8100. [PMID: 37188333 PMCID: PMC10231339 DOI: 10.1021/acs.inorgchem.2c04370] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/13/2022] [Indexed: 05/17/2023]
Abstract
K2SiH6, crystallizing in the cubic K2PtCl6 structure type (Fm3̅m), features unusual hypervalent SiH62- complexes. Here, the formation of K2SiH6 at high pressures is revisited by in situ synchrotron diffraction experiments, considering KSiH3 as a precursor. At the investigated pressures, 8 and 13 GPa, K2SiH6 adopts the trigonal (NH4)2SiF6 structure type (P3̅m1) upon formation. The trigonal polymorph is stable up to 725 °C at 13 GPa. At room temperature, the transition into an ambient pressure recoverable cubic form occurs below 6.7 GPa. Theory suggests the existence of an additional, hexagonal, variant in the pressure interval 3-5 GPa. According to density functional theory band structure calculations, K2SiH6 is a semiconductor with a band gap around 2 eV. Nonbonding H-dominated states are situated below and Si-H anti-bonding states are located above the Fermi level. Enthalpically feasible and dynamically stable metallic variants of K2SiH6 may be obtained when substituting Si partially by Al or P, thus inducing p- and n-type metallicity, respectively. Yet, electron-phonon coupling appears weak, and calculated superconducting transition temperatures are <1 K.
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Affiliation(s)
- Olga Yu. Vekilova
- Department
of Materials and Environmental Chemistry, Stockholm University, SE-10691 Stockholm, Sweden
- Condensed
Matter Theory, Department of Physics, AlbaNova
University Center, Royal Institute of Technology (KTH), 106 91 Stockholm, Sweden
| | - Doreen C. Beyer
- Institute
for Inorganic Chemistry, Leipzig University, Johannisallee 29, D-04103 Leipzig, Germany
| | - Shrikant Bhat
- Deutsches
Elektronen-Synchrotron DESY, Notkestraße 85, D-22607 Hamburg, Germany
| | - Robert Farla
- Deutsches
Elektronen-Synchrotron DESY, Notkestraße 85, D-22607 Hamburg, Germany
| | - Volodymyr Baran
- Deutsches
Elektronen-Synchrotron DESY, Notkestraße 85, D-22607 Hamburg, Germany
| | - Sergei I. Simak
- Theoretical
Physics Division, Department of Physics, Chemistry and Biology (IFM) Linköping University, SE-581 83 Linköping, Sweden
- Department
of Physics and Astronomy, Uppsala University, SE-75120 Uppsala, Sweden
| | - Holger Kohlmann
- Institute
for Inorganic Chemistry, Leipzig University, Johannisallee 29, D-04103 Leipzig, Germany
| | - Ulrich Häussermann
- Department
of Materials and Environmental Chemistry, Stockholm University, SE-10691 Stockholm, Sweden
| | - Kristina Spektor
- Institute
for Inorganic Chemistry, Leipzig University, Johannisallee 29, D-04103 Leipzig, Germany
- Deutsches
Elektronen-Synchrotron DESY, Notkestraße 85, D-22607 Hamburg, Germany
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Zhou Q, Wan J, Zhou Y, Zhang S, Shi D, Xie X, Pu H, Ye Y, Wang Z. Ultraintense Zero-Phonon Line from a Mn 4+ Red-Emitting Phosphor for High-Quality Backlight Display Applications. Inorg Chem 2021; 60:19197-19205. [PMID: 34878773 DOI: 10.1021/acs.inorgchem.1c02938] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
The zero-phonon line (ZPL) of Mn4+, which highly depends on its local environment, is usually much weaker than the vibrational phonon sidebands. In this work, an ultraintense ZPL emission, coming from a brand new red-emitting Rb2LiGaF6:Mn4+ (RLGFM) phosphor upon blue light excitation, is presented. The interesting spectral characteristic originates from the nonequivalent substitution of Mn4+ for Ga3+ in a rigid octahedral structure with a low symmetry, which induces neighboring cation vacancies that distort the local symmetry of the [MnF6] octahedra. Benefiting from the ultraintense ZPL emission, a wide color gamut is achieved using RLGFM and β-SiAlON:Eu2+ as color converters. Moreover, a comprehensive investigation on the thermal quenching behavior is also conducted to provide detailed insights to explore novel Mn4+ red phosphors for high-quality backlight display applications.
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Affiliation(s)
- Qiang Zhou
- Key Laboratory of Green Chemistry Materials in University of Yunnan Province, School of Chemistry and Environment, Yunnan Minzu University, Kunming 650500, P. R. China
| | - Jing Wan
- Key Laboratory of Green Chemistry Materials in University of Yunnan Province, School of Chemistry and Environment, Yunnan Minzu University, Kunming 650500, P. R. China
| | - Yayun Zhou
- State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Fiber Laser Materials and Applied Techniques, South China University of Technology, Guangzhou 510641, P. R. China
| | - Shuai Zhang
- State Key Laboratory of Luminescent Materials and Devices, Guangdong Provincial Key Laboratory of Fiber Laser Materials and Applied Techniques, South China University of Technology, Guangzhou 510641, P. R. China
| | - Dongxin Shi
- Key Laboratory of Green Chemistry Materials in University of Yunnan Province, School of Chemistry and Environment, Yunnan Minzu University, Kunming 650500, P. R. China
| | - Xiaoling Xie
- Key Laboratory of Green Chemistry Materials in University of Yunnan Province, School of Chemistry and Environment, Yunnan Minzu University, Kunming 650500, P. R. China
| | - Haiqi Pu
- Key Laboratory of Green Chemistry Materials in University of Yunnan Province, School of Chemistry and Environment, Yunnan Minzu University, Kunming 650500, P. R. China
| | - Yanqing Ye
- Key Laboratory of Green Chemistry Materials in University of Yunnan Province, School of Chemistry and Environment, Yunnan Minzu University, Kunming 650500, P. R. China
| | - Zhengliang Wang
- Key Laboratory of Green Chemistry Materials in University of Yunnan Province, School of Chemistry and Environment, Yunnan Minzu University, Kunming 650500, P. R. China
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Lang T, Wang J, Han T, Cai M, Fang S, Zhong Y, Peng L, Cao S, Liu B, Polisadova E, Korepanov V, Yakovlev A. Enhancing Structural Rigidity via a Strategy Involving Protons for Creating Water-Resistant Mn 4+-Doped Fluoride Phosphors. Inorg Chem 2021; 60:1832-1838. [PMID: 33476132 DOI: 10.1021/acs.inorgchem.0c03284] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/22/2022]
Abstract
The poor water resistance property of a commercial Mn4+-activated narrow-band red-emitting fluoride phosphor restricts its promising applications in high-performance white LEDs and wide-gamut displays. Herein, we develop a structural rigidity-enhancing strategy using a novel KHF2:Mn4+ precursor as a Mn source to construct a proton-containing water-resistant phosphor K2(H)TiF6:Mn4+ (KHTFM). The parasitic [HMnF6]- complexes in the interstitial site from the fall off the KHF2:Mn4+ are also transferred to the K2TiF6 host by ion exchange to form KHTFM with rigid bonding networks, improving the water resistance and thermostability of the sample. The KHTFM sample retains at least 92% of the original emission value after 180 min of water immersion, while the non-water-resistant K2TiF6:Mn4+(KTFM) phosphor maintains only 23%. Therefore, these findings not only illustrate the effect of protons on fluoride but also provide a novel insight into commercial water-resistant fluoride phosphors.
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Affiliation(s)
- Tianchun Lang
- Chongqing Key Laboratory of Materials Surface & Interface Science, Research Institute for New Materials Technology, Chongqing University of Arts and Sciences, Chongqing 402160, China.,School of Advanced Manufacturing Technologies, National Research Tomsk Polytechnic University, Tomsk 634050, Russia
| | - Jinyu Wang
- Chongqing Key Laboratory of Materials Surface & Interface Science, Research Institute for New Materials Technology, Chongqing University of Arts and Sciences, Chongqing 402160, China.,School of Material Science and Engineering, Chongqing University of Technology, No. 319, Honghe Road, Yongchuan District, Chongqing 400054, China
| | - Tao Han
- Chongqing Key Laboratory of Materials Surface & Interface Science, Research Institute for New Materials Technology, Chongqing University of Arts and Sciences, Chongqing 402160, China
| | - Mingsheng Cai
- School of Advanced Manufacturing Technologies, National Research Tomsk Polytechnic University, Tomsk 634050, Russia
| | - Shuangqiang Fang
- School of Advanced Manufacturing Technologies, National Research Tomsk Polytechnic University, Tomsk 634050, Russia
| | - Yang Zhong
- School of Advanced Manufacturing Technologies, National Research Tomsk Polytechnic University, Tomsk 634050, Russia
| | - Lingling Peng
- Chongqing Key Laboratory of Materials Surface & Interface Science, Research Institute for New Materials Technology, Chongqing University of Arts and Sciences, Chongqing 402160, China
| | - Shixiu Cao
- Chongqing Key Laboratory of Materials Surface & Interface Science, Research Institute for New Materials Technology, Chongqing University of Arts and Sciences, Chongqing 402160, China
| | - Bitao Liu
- Chongqing Key Laboratory of Materials Surface & Interface Science, Research Institute for New Materials Technology, Chongqing University of Arts and Sciences, Chongqing 402160, China
| | - Elena Polisadova
- School of Advanced Manufacturing Technologies, National Research Tomsk Polytechnic University, Tomsk 634050, Russia
| | - Vladimir Korepanov
- School of Advanced Manufacturing Technologies, National Research Tomsk Polytechnic University, Tomsk 634050, Russia
| | - Aleksey Yakovlev
- School of Advanced Manufacturing Technologies, National Research Tomsk Polytechnic University, Tomsk 634050, Russia
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