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Klementyeva SV, Woern K, Schrenk C, Zhang M, Khusniyarov MM, Schnepf A. [(thf) 5Ln(Ge 9{Si(SiMe 3) 3} 2)] (Ln = Eu, Sm, Yb): Capping Metalloid Germanium Cluster with Lanthanides. Inorg Chem 2023; 62:5614-5621. [PMID: 36967670 DOI: 10.1021/acs.inorgchem.3c00165] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/29/2023]
Abstract
We report the synthesis of three neutral complexes with different coordination modes of a di-silylated metalloid germanium cluster to divalent lanthanides [(thf)5Ln(ηn-Ge9(Hyp)2)] (Ln = Yb (1, n = 1); Eu (2, n = 2, 3), Sm (3, n = 2, 3); Hyp = Si(SiMe3)3) by the salt metathesis of LnI2 with K2[Ge9(Hyp)2] in THF. The complexes were characterized by elemental analysis, nuclear magnetic resonance and UV-vis-NIR spectroscopy, and single-crystal X-ray diffraction. In thf solution, the formation of contact or solvate-separated ion pairs depending on the concentration is assumed. Compound 2 exhibits a blue luminescence typical for Eu2+. The solid-state magnetic measurements of compounds 2 and 3 confirm the presence of divalent europium and samarium, respectively.
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Ge X, Yu J, Zhu L, Deng Z, Zhang J, Chen CL, Huang WH, Chen BH, Chang CK, Chen H, Zhao R. Irreversible Transition from GaO 6 Octahedra to GaO 4 Tetrahedra for Improved Electrochemical Stability in Ga-Doped Li(Ni 0.9Co 0.1)O 2. Inorg Chem 2021; 60:3015-3024. [PMID: 33577307 DOI: 10.1021/acs.inorgchem.0c03211] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
Trace doping is an efficient way to improve the stability of nickel-rich layered cathodes for lithium-ion batteries, but the structural origin of such improvement, rather than a simple replacement, has been rarely explored. Herein, Ga dopants have been introduced into a nickel-rich host, LiNi0.9Co0.1O2, by a combination of coprecipitation and the solid-state sintering method. Structural analyses based on high-resolution synchrotron powder diffraction data and X-ray absorption spectra suggest that Ga preferentially sits in the NiO6 slabs, resulting in reduced Ni/Li cationic mixing and depressed lattice vibration. Due to the smaller dissociation energy of Ga-O bonds, some Ga3+ cations migrate first toward Li layers upon delithiation and form the GaO4 tetrahedral symmetry irreversibly during the electrochemical process, which acts as a pillar in the subsequent electrochemical processes. As a result, the doped material exhibits both improved cycling performance and rate capability under a high operating voltage (4.5 V) due to the stabilized structure in the lithiation/delithiation process. This study illustrates how a dopant enhances the electrochemical stability in views of both pristine and charged structure and suggests that a positive effect is expected from the dopant favoring the tetrahedral symmetry (e.g., Al).
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Affiliation(s)
- Xinru Ge
- School of Chemistry, Engineering Research Center of MTEES (Ministryof Education), South China Normal University, Guangzhou 510006, People's Republic of China
| | - Jing Yu
- School of Chemistry, Engineering Research Center of MTEES (Ministryof Education), South China Normal University, Guangzhou 510006, People's Republic of China
| | - Liheng Zhu
- School of Chemistry, Engineering Research Center of MTEES (Ministryof Education), South China Normal University, Guangzhou 510006, People's Republic of China
| | - Zeneng Deng
- School of Chemistry, Engineering Research Center of MTEES (Ministryof Education), South China Normal University, Guangzhou 510006, People's Republic of China
| | - Jiliang Zhang
- Department of Materials Science and Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Chi-Liang Chen
- National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan, Republic of China
| | - Wei-Hsiang Huang
- Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology (NTUST), Taipei 10607, Taiwan, Republic of China
| | - Bo Hao Chen
- National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan, Republic of China
| | - Chung-Kai Chang
- National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan, Republic of China
| | - Hongyu Chen
- School of Chemistry, Engineering Research Center of MTEES (Ministryof Education), South China Normal University, Guangzhou 510006, People's Republic of China
| | - Ruirui Zhao
- School of Chemistry, Engineering Research Center of MTEES (Ministryof Education), South China Normal University, Guangzhou 510006, People's Republic of China
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