1
|
Wang T, Zhou C, Huang W, Xia X, Chen H, Li Z, Jiang J. Synergistic Improvement of BiI 3 and In on Thermoelectric Properties of Zone-Melted n-Type Bi 2Te 2.7Se 0.3. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 39051446 DOI: 10.1021/acsami.4c04191] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/27/2024]
Abstract
Bismuth telluride (Bi2Te3) is the only commercial thermoelectric material so far, and it is also the best thermoelectric material with the best performance at room temperature. However, up to now, the zT value of n-type materials used on a large scale is only about 1.0; this makes the thermoelectric conversion efficiency of thermoelectric devices and thermoelectric applications stagnant. Therefore, under the synergistic action of BiI3 and In, the properties of n-type Bi2Te2.7Se0.3 material are improved. The experiments show that BiI3, which is nontoxic and non-absorbent, can effectively improve the power factor of the material and inhibit the bipolar effect and is an effective dopant. After the inclusion of In, due to the low bond energy of the In-Te bond, it is easy to form the InTe phase in the matrix material and then introduce the second phase, and the presence of the second phase in the material will scatter phonons and reduce the lattice thermal conductivity so that it can reach 0.31 W m-1 K-1 at 350 K. Ultimately, a high maximum zT of 1.20 at 325 K and a remarkable average zT of 1.04 (300-500 K) are attained in the In0.005Bi1.995Te2.7Se0.3 + 0.13 wt % BiI3 sample.
Collapse
Affiliation(s)
- Tongliang Wang
- Hohai University, Nanjing 211100, China
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | - Chuandong Zhou
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
| | - Wenjie Huang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
- State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinhuangdao 066004, China
| | - Xueqing Xia
- Hohai University, Nanjing 211100, China
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| | | | | | - Jun Jiang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
| |
Collapse
|
2
|
Manjón FJ, Osman HH, Savastano M, Vegas Á. Electron-Deficient Multicenter Bonding in Phase Change Materials: A Chance for Reconciliation. MATERIALS (BASEL, SWITZERLAND) 2024; 17:2840. [PMID: 38930210 PMCID: PMC11204841 DOI: 10.3390/ma17122840] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/14/2024] [Revised: 06/03/2024] [Accepted: 06/06/2024] [Indexed: 06/28/2024]
Abstract
In the last few years, a controversy has been raised regarding the nature of the chemical bonding present in phase change materials (PCMs), many of which are minerals such as galena (PbS), clausthalite (PbSe), and altaite (PbTe). Two opposite bonding models have claimed to be able to explain the extraordinary properties of PCMs in the last decade: the hypervalent (electron-rich multicenter) bonding model and the metavalent (electron-deficient) bonding model. In this context, a third bonding model, the electron-deficient multicenter bonding model, has been recently added. In this work, we comment on the pros and cons of the hypervalent and metavalent bonding models and briefly review the three approaches. We suggest that both hypervalent and metavalent bonding models can be reconciled with the third way, which considers that PCMs are governed by electron-deficient multicenter bonds. To help supporters of the metavalent and hypervalent bonding model to change their minds, we have commented on the chemical bonding in GeSe and SnSe under pressure and in several polyiodides with different sizes and geometries.
Collapse
Affiliation(s)
- Francisco Javier Manjón
- Instituto de Diseño para la Fabricación y Producción Automatizada, MALTA Consolider Team, Universitat Politècnica de València, 46022 Valencia, Spain;
| | - Hussien H. Osman
- Instituto de Diseño para la Fabricación y Producción Automatizada, MALTA Consolider Team, Universitat Politècnica de València, 46022 Valencia, Spain;
- Instituto de Ciencia de los Materiales de la Universitat de València, MALTA Consolider Team, Universitat de València, 46100 Valencia, Spain
- Chemistry Department, Faculty of Science, Helwan University, Cairo 11795, Egypt
| | - Matteo Savastano
- Department of Human Sciences for the Promotion of Quality of Life, University San Raffaele Roma, via di Val Cannuta 247, 00166 Rome, Italy;
| | - Ángel Vegas
- Universidad de Burgos, Hospital del Rey, 09001 Burgos, Spain;
| |
Collapse
|
3
|
Liu C, Gao Y, Tian C, Jiang C, Zhu C, Wu X, Huang X, Cui T. Pressure-driven dome-shaped superconductivity in topological insulator GeBi 2Te 4. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2024; 36:225703. [PMID: 38417156 DOI: 10.1088/1361-648x/ad2e24] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/10/2024] [Accepted: 02/28/2024] [Indexed: 03/01/2024]
Abstract
The discovery of new superconductors based on topological insulators always captures special attention due to their unique structural and electronic properties. High pressure is an effective way to regulate the lattice as well as electronic states in the topological insulators, thus altering their electronic properties. Herein, we report the structural and electrical transport properties of the topological insulator GeBi2Te4by using high-pressure techniques. The synchrotron x-ray diffraction revealed that GeBi2Te4underwent two structural phase transitions fromR-3m(phase I) toC2/m(phase II) and then intoIm-3m(phase III). Superconductivity was observed at 6.6 GPa to be associated with the first structural phase transition. The superconducting transition temperatureTcreached a maximum value of 8.4 K, accompanied by theRHsign changing from negative to positive at 14.6 GPa, then gradually decreased with increasing pressure in phase III, showing a dome-shaped phase diagram. The present results provide a platform for understanding the interplay between the crystal structure and superconductivity by the regulation of pressure in the topological insulator materials.
Collapse
Affiliation(s)
- Chenchen Liu
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, People's Republic of China
| | - Yiping Gao
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, People's Republic of China
| | - Can Tian
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, People's Republic of China
| | - Chuang Jiang
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, People's Republic of China
| | - Chengcheng Zhu
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, People's Republic of China
| | - Xinyue Wu
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, People's Republic of China
| | - Xiaoli Huang
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, People's Republic of China
| | - Tian Cui
- State Key Laboratory of Superhard Materials, College of Physics, Jilin University, Changchun 130012, People's Republic of China
- School of Physical Science and Technology, Ningbo University, Ningbo 315211, People's Republic of China
| |
Collapse
|
4
|
Altena M, Jansen T, Tsvetanova M, Brinkman A. Phase Separation Prevents the Synthesis of VBi 2Te 4 by Molecular Beam Epitaxy. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 14:87. [PMID: 38202542 PMCID: PMC10780430 DOI: 10.3390/nano14010087] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/24/2023] [Revised: 12/17/2023] [Accepted: 12/26/2023] [Indexed: 01/12/2024]
Abstract
Intrinsic magnetic topological insulators (IMTIs) have a non-trivial band topology in combination with magnetic order. This potentially leads to fascinating states of matter, such as quantum anomalous Hall (QAH) insulators and axion insulators. One of the theoretically predicted IMTIs is VBi2Te4, but experimental evidence of this material is lacking so far. Here, we report on our attempts to synthesise VBi2Te4 by molecular beam epitaxy (MBE). X-ray diffraction reveals that in the thermodynamic phase space reachable by MBE, there is no region where VBi2Te4 is stably synthesised. Moreover, scanning transmission electron microscopy shows a clear phase separation to Bi2Te3 and VTe2 instead of the formation of VBi2Te4. We suggest the phase instability to be due to either the large lattice mismatch between VTe2 and Bi2Te3 or the unfavourable valence state of vanadium.
Collapse
Affiliation(s)
- Marieke Altena
- MESA+ Institute for Nanotechnology, University of Twente, 7500 AE Enschede, The Netherlands
| | - Thies Jansen
- MESA+ Institute for Nanotechnology, University of Twente, 7500 AE Enschede, The Netherlands
| | | | | |
Collapse
|
5
|
Wuttig M, Schön CF, Lötfering J, Golub P, Gatti C, Raty JY. Revisiting the Nature of Chemical Bonding in Chalcogenides to Explain and Design their Properties. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2208485. [PMID: 36456187 DOI: 10.1002/adma.202208485] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/15/2022] [Revised: 10/31/2022] [Indexed: 05/19/2023]
Abstract
Quantum chemical bonding descriptors have recently been utilized to design materials with tailored properties. Their usage to facilitate a quantitative description of bonding in chalcogenides as well as the transition between different bonding mechanisms is reviewed. More importantly, these descriptors can also be employed as property predictors for several important material characteristics, including optical and transport properties. Hence, these quantum chemical bonding descriptors can be utilized to tailor material properties of chalcogenides relevant for thermoelectrics, photovoltaics, and phase-change memories. Relating material properties to bonding mechanisms also shows that there is a class of materials, which are characterized by unconventional properties such as a pronounced anharmonicity, a large chemical bond polarizability, and strong optical absorption. This unusual property portfolio is attributed to a novel bonding mechanism, fundamentally different from ionic, metallic, and covalent bonding, which is called "metavalent." In the concluding section, a number of promising research directions are sketched, which explore the nature of the property changes upon changing bonding mechanism and extend the concept of quantum chemical property predictors to more complex compounds.
Collapse
Affiliation(s)
- Matthias Wuttig
- I. Institute of Physics, Physics of Novel Materials, RWTH Aachen University, 52056, Aachen, Germany
- Jülich-Aachen Research Alliance (JARA FIT and JARA HPC), RWTH Aachen University, 52056, Aachen, Germany
- PGI 10 (Green IT), Forschungszentrum Jülich GmbH, 52428, Jülich, Germany
| | - Carl-Friedrich Schön
- I. Institute of Physics, Physics of Novel Materials, RWTH Aachen University, 52056, Aachen, Germany
| | - Jakob Lötfering
- I. Institute of Physics, Physics of Novel Materials, RWTH Aachen University, 52056, Aachen, Germany
| | - Pavlo Golub
- Department of Theoretical Chemistry, J. Heyrovský Institute of Physical Chemistry, Dolejškova 2155/3, Prague 8, 182 23, Czech Republic
| | - Carlo Gatti
- CNR-SCITEC, Istituto di Scienze e Tecnologie Chimiche "Giulio Natta", sezione di via Golgi, via Golgi 19, Milano, 20133, Italy
| | - Jean-Yves Raty
- CESAM B5, Université de Liège, Sart-Tilman, B4000, Belgium
| |
Collapse
|
6
|
Rajaji V, Manjón FJ, Narayana C. Pressure induced topological and topological crystalline insulators. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:423001. [PMID: 35952626 DOI: 10.1088/1361-648x/ac8906] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/04/2022] [Accepted: 08/11/2022] [Indexed: 06/15/2023]
Abstract
Research on topological and topological crystalline insulators (TCIs) is one of the most intense and exciting topics due to its fascinating fundamental science and potential technological applications. Pressure (strain) is one potential pathway to induce the non-trivial topological phases in some topologically trivial (normal) insulating or semiconducting materials. In the last ten years, there have been substantial theoretical and experimental efforts from condensed-matter scientists to characterize and understand pressure-induced topological quantum phase transitions (TQPTs). In particular, a promising enhancement of the thermoelectric performance through pressure-induced TQPT has been recently realized; thus evidencing the importance of this subject in society. Since the pressure effect can be mimicked by chemical doping or substitution in many cases, these results have opened a new route to develop more efficient materials for harvesting green energy at ambient conditions. Therefore, a detailed understanding of the mechanism of pressure-induced TQPTs in various classes of materials with spin-orbit interaction is crucial to improve their properties for technological implementations. Hence, this review focuses on the emerging area of pressure-induced TQPTs to provide a comprehensive understanding of this subject from both theoretical and experimental points of view. In particular, it covers the Raman signatures of detecting the topological transitions (under pressure), some of the important pressure-induced topological and TCIs of the various classes of spin-orbit coupling materials, and provide future research directions in this interesting field.
Collapse
Affiliation(s)
- V Rajaji
- University Lyon, Université Claude Bernard Lyon 1, CNRS, Institut Lumière Matière, F-69622 Villeurbanne, France
- Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur PO, Bangalore 560 064, India
- School of Advance Materials, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur PO, Bangalore 560 064, India
| | - F J Manjón
- Instituto de Diseño para la Fabricación y Producción Automatizada, MALTA Consolider Team, Universitat Politècnica de València, 46022 Valencia, Spain
| | - Chandrabhas Narayana
- Chemistry and Physics of Materials Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur PO, Bangalore 560 064, India
- School of Advance Materials, Jawaharlal Nehru Centre for Advanced Scientific Research, Jakkur PO, Bangalore 560 064, India
| |
Collapse
|
7
|
Osman HHH, Manjón FJ. Metavalent bonding in chalcogenides: DFT-chemical pressure approach. Phys Chem Chem Phys 2022; 24:9936-9942. [PMID: 35437536 DOI: 10.1039/d2cp00954d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Understanding the chemical bond nature has attracted considerable attention as it is crucial to analyze and comprehend the different physical and chemical properties of materials. This work is considered a complementary part of our previous work in studying the nature of different types of bonding interactions in a wide variety of molecules and materials using the DFT Chemical Pressure (CP) approach. Recently, a new type of chemical bond, the metavalent bond (MVB), has been defined. We show how the CP formalism can be used to analyze and study the establishment of MVB in two chalcogenides, GeSe and PbSe, in a similar fashion as the electron localization function (ELF) profiles. This is accomplished by analyzing the CP maps of these two chalcogenides at different pressures (up to 40 GPa for GeSe and 10 GPa for PbSe). The CP maps show distinctive features related to the MVB, providing insights into the existence of such chemical interaction in the crystal structure of the two compounds. Similar to ELF profiles, CP maps can visualize and track the strength of the MVB in GeSe and PbSe under pressure.
Collapse
Affiliation(s)
- Hussien Helmy Hassan Osman
- Chemistry Department, Faculty of Science, Helwan University, Ain-Helwan, 11795, Cairo, Egypt. .,Instituto de Diseño para la Fabricación y Producción Automatizada, MALTA Consolider Team, Universitat Politècnica de València, 46022 Valencia, Spain
| | - Francisco Javier Manjón
- Instituto de Diseño para la Fabricación y Producción Automatizada, MALTA Consolider Team, Universitat Politècnica de València, 46022 Valencia, Spain
| |
Collapse
|
8
|
Combined Experimental and Theoretical Studies: Lattice-Dynamical Studies at High Pressures with the Help of Ab Initio Calculations. MINERALS 2021. [DOI: 10.3390/min11111283] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/17/2022]
Abstract
Lattice dynamics studies are important for the proper characterization of materials, since these studies provide information on the structure and chemistry of materials via their vibrational properties. These studies are complementary to structural characterization, usually by means of electron, neutron, or X-ray diffraction measurements. In particular, Raman scattering and infrared absorption measurements are very powerful, and are the most common and easy techniques to obtain information on the vibrational modes at the Brillouin zone center. Unfortunately, many materials, like most minerals, cannot be obtained in a single crystal form, and one cannot play with the different scattering geometries in order to make a complete characterization of the Raman scattering tensor of the material. For this reason, the vibrational properties of many materials, some of them known for millennia, are poorly known even under room conditions. In this paper, we show that, although it seems contradictory, the combination of experimental and theoretical studies, like Raman scattering experiments conducted at high pressure and ab initio calculations, is of great help to obtain information on the vibrational properties of materials at different pressures, including at room pressure. The present paper does not include new experimental or computational results. Its focus is on stressing the importance of combined experimental and computational approaches to understand materials properties. For this purpose, we show examples of materials already studied in different fields, including some hot topic areas such as phase change materials, thermoelectric materials, topological insulators, and new subjects as metavalent bonding.
Collapse
|
9
|
Gallego-Parra S, Vilaplana R, Gomis O, Lora da Silva E, Otero-de-la-Roza A, Rodríguez-Hernández P, Muñoz A, González J, Sans JA, Cuenca-Gotor VP, Ibáñez J, Popescu C, Manjón FJ. Structural, vibrational and electronic properties of α'-Ga 2S 3 under compression. Phys Chem Chem Phys 2021; 23:6841-6862. [PMID: 33725033 DOI: 10.1039/d0cp06417c] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/05/2023]
Abstract
We report a joint experimental and theoretical study of the low-pressure phase of α'-Ga2S3 under compression. Theoretical ab initio calculations have been compared to X-ray diffraction and Raman scattering measurements under high pressure carried out up to 17.5 and 16.1 GPa, respectively. In addition, we report Raman scattering measurements of α'-Ga2S3 at high temperature that have allowed us to study its anharmonic properties. To understand better the compression of this compound, we have evaluated the topological properties of the electron density, the electron localization function, and the electronic properties as a function of pressure. As a result, we shed light on the role of the Ga-S bonds, the van der Waals interactions inside the channels of the crystalline structure, and the single and double lone electron pairs of the sulphur atoms in the anisotropic compression of α'-Ga2S3. We found that the structural channels are responsible for the anisotropic properties of α'-Ga2S3 and the A'(6) phonon, known as the breathing mode and associated with these channels, exhibits the highest anharmonic behaviour. Finally, we report calculations of the electronic band structure of α'-Ga2S3 at different pressures and find a nonlinear pressure behaviour of the direct band gap and a pressure-induced direct-to-indirect band gap crossover that is similar to the behaviour previously reported in other ordered-vacancy compounds, including β-Ga2Se3. The importance of the single and, more specially, the double lone electron pairs of sulphur in the pressure dependence of the topmost valence band of α'-Ga2S3 is stressed.
Collapse
Affiliation(s)
- S Gallego-Parra
- Instituto de Diseño para la Fabricación y Producción Automatizada, MALTA Consolider Team, Universitat Politècnica de València, 46022 València, Spain.
| | | | | | | | | | | | | | | | | | | | | | | | | |
Collapse
|
10
|
High-Pressure Spectroscopy Study of Zn(IO3)2 Using Far-Infrared Synchrotron Radiation. CRYSTALS 2020. [DOI: 10.3390/cryst11010034] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/16/2022]
Abstract
We report the first high-pressure spectroscopy study on Zn(IO3)2 using synchrotron far-infrared radiation. Spectroscopy was conducted up to pressures of 17 GPa at room temperature. Twenty-five phonons were identified below 600 cm−1 for the initial monoclinic low-pressure polymorph of Zn(IO3)2. The pressure response of the modes with wavenumbers above 150 cm−1 has been characterized, with modes exhibiting non-linear responses and frequency discontinuities that have been proposed to be related to the existence of phase transitions. Analysis of the high-pressure spectra acquired on compression indicates that Zn(IO3)2 undergoes subtle phase transitions around 3 and 8 GPa, followed by a more drastic transition around 13 GPa.
Collapse
|