Effect of H2O Molecules on Thermal Expansion of TiCo(CN)6

Influence of A/B Element Substitution on Negative Thermal Expansion in AB(CN)6 (A = Al, Ga, In; B = Co, Fe, Mn, Cr, V, Ti): A Density Functional Theory Study

Negative thermal expansion as an abnormal physical behavior of materials has promising applications in a high sophisticated equipment field, but the materials are rare. Here, we use the first-principles calculations based on density functional theory combined with the recently developed average atomic volume (AAV = V/N, where V is unit cell volume and N is the number of atoms in the unit) rule to predict the large isotropic negative thermal expansion materials of Prussian blue analogues AB(CN)6 (A = Al, Ga, In; B = Co, Fe, Mn, Cr, V, Ti) in a wide temperature range. Our results clearly show that the coefficient of negative thermal expansion has a near-linear relationship with the average atomic volume of the systems and is also influenced by the element substitution at the A or B site. Lattice dynamic simulations indicate that the main contribution to the negative thermal expansion comes from the low-frequency transverse vibration of the (B)-C≡N-(A) groups, especially the transverse vibration of the N atoms. Thus, the element substitution at the A site (binding to N) can tune the negative thermal expansion behavior of the systems more effectively than that at the B site (binding to C), indicating the different roles of bonds on the negative thermal expansion. Our present work not only expands the kinds of isotropic materials but also gives some insights into the relationship between the average atomic volume and negative thermal expansion.

Radiation effects, zero thermal expansion, and pressure-induced phase transition in CsMnCo(CN)6

The Prussian blue analogue CsMnCo(CN)₆ is studied using powder X-ray and neutron diffraction under variable temperature, pressure, and X-ray exposure. It retains cubic F4̄3m symmetry in the range 85-500 K with minimal thermal expansion, whereas a phase transition to P4̄n2 occurs at ∼2 GPa, driven by octahedral tilting. A small lattice contraction occurs upon increased X-ray dose. Comparisons with related systems indicate that the Cs^I ions decrease the thermal expansion and suppress the likelihood of phase transformations. The results improve the understanding of the stimuli-responsive behaviour of coordination polymers.

Understanding Large Negative Thermal Expansion of NdFe(CN)6 through the Electronic Structure and Lattice Dynamics

A large negative thermal expansion (NTE) (α_v = -4.1 × 10^-5 K^-1, 100-525 K) has been discovered in NdFe(CN)₆. Here, the synchrotron X-ray diffraction and lattice dynamics calculations using the density functional theory were conducted to understand the NTE in NdFe(CN)₆. The information obtained on the bond nature of the Nd-N≡C-Fe linkage and on the atomic thermal vibrations suggests that the transverse vibrations of the -N≡C- group, in particular from N atoms, produced the NTE in NdFe(CN)₆. This is corroborated by the calculated Grüneisen parameters, which confirm the relationship between NTE and CN atomic vibrations. The results provide a helpful contribution toward the realization of new materials with negative or controllable thermal expansion.

Biaxial negative thermal expansion in Zn[N(CN)2]2

A 2D-layered network Zn[N(CN)2]2, is reported in which the transverse vibrations of C atoms and the rotation of ZnN4 tetrahedra dominate its biaxial NTE behavior.

Anomalous Thermal Expansion in Ta2WO8 Oxide Semiconductor over a Wide Temperature Range

Expansion of material is one of the major impediments in the high precision instrument and engineering field. Low/zero thermal expansion compounds have drawn great attention because of their important scientific significance and enormous application value. However, the realization of low thermal expansion over a wide temperature range is still scarce. In this study, a low thermal expansion over a wide temperature range has been observed in the Ta₂WO₈ oxide semiconductor. It is a balance effect of the negative thermal expansion of the a axis and the positive thermal expansion of the b axis and the c axis to achieve low thermal expansion behavior. The results of the means of variable temperature X-ray diffraction and variable pressure Raman spectroscopy analysis indicated that the transverse vibration of bridging oxygen atoms is the driving force, which is corresponding to the low-frequency lattice modes with a negative Grüneisen parameter. The present study provides one wide band gap semiconductor Ta₂WO₈ with anomalous thermal expansion behavior.

Zero Thermal Expansion in Ta2Mo2O11 by Compensation Effects

Although zero thermal expansion (ZTE) materials have broad application prospects for high precision engineering, they are rare. Here, a new ZTE material, Ta₂Mo₂O₁₁ (α_l = 0.37 × 10^-6 K^-1, 200-600 K), is reported. A joint study of high-resolution synchrotron X-ray diffraction, temperature- and pressure-dependent Raman spectroscopy, and first-principles calculations was performed to investigate the structure and dynamics of Ta₂Mo₂O₁₁ with the aim of understanding its ZTE mechanism. Ta₂Mo₂O₁₁ displays a layered structure, stacking along the [001] direction. Analysis of the phonon modes indicates that positive and negative contributions to thermal expansion are balanced, and a shrinkage occurs along the layers, while the interlayer distance expands with increasing temperature, thus giving rise to the ZTE behavior of Ta₂Mo₂O₁₁. The present study provides a promising ZTE material and new insights into the mechanisms of thermal expansion.