Group IV Transition Metal (M = Zr, Hf) Precursors for High-κ Metal Oxide Thin Films

High Volatile Antimony(III) Precursors for Metal Oxide Thin Film Deposition

We report the synthesis and characterization of novel antimony(III) complexes: Sb(mpa)3 (1), Sb(mmpa)3 (2), Sb(mdpa)3 (3), Sb(epa)3 (4), Sb(empa)3 (5), and Sb(edpa)3 (6) (mpa = N-methoxypropanamide, mmpa = N-methoxy-2-methyl-propanamide, mdpa = N-methoxy-2,2-dimethylpropanamide, epa = N-ethoxypropanamide, empa = N-ethoxy-2-methylpropanamide, and edpa = N-ethoxy-2,2-dimethylpropanamide, via a salt-elimination reaction with SbCl3 and sodium-substituted carboxamide. The molecular structure of 6 revealed the formation of a homoleptic conformer with a highly distorted pentagonal bipyramidal geometry, as determined by X-ray crystallography. Thermogravimetric analysis showed excellent volatility at elevated temperatures, with complex 4 displaying the lowest residual mass of 0.16% at 500 °C. For complexes 4, 5, and 6, the temperature at a vapor pressure of 1 Torr and the enthalpy of vaporization were estimated to be 58, 64, and 45 °C and 83.31, 103.58, and 99.93 kJ/mol, respectively.

Role of a cyclopentadienyl ligand in a heteroleptic alkoxide precursor in atomic layer deposition

Alkoxide precursors have been highlighted for depositing carbon-free films, but their use in Atomic Layer Deposition (ALD) often exhibits a non-saturated growth. This indicates no self-limiting growth due to the chain reaction of hydrolysis or ligand decomposition caused by β-hydride elimination. In the previous study, we demonstrated that self-limiting growth of ALD can be achieved using our newly developed precursor, hafnium cyclopentadienyl tris(N-ethoxy-2,2-dimethyl propanamido) [HfCp(edpa)3]. To elucidate the growth mechanism and the role of cyclopentadienyl (Cp) ligand in a heteroleptic alkoxide precursor, herein, we compare homoleptic and heteroleptic Hf precursors consisting of N-ethoxy-2,2-dimethyl propanamido (edpa) ligands with and without cyclopentadienyl ligand-hafnium tetrakis(N-ethoxy-2,2-dimethyl propanamido) [Hf(edpa)4] and HfCp(edpa)3. We also investigate the role of a Cp ligand in growth characteristics. By substituting an alkoxide ligand with a Cp ligand, we could modify the surface reaction during ALD, preventing undesired reactions. The last remaining edpa after Hf(edpa)4 adsorption can undergo a hydride elimination reaction, resulting in surface O-H generation. In contrast, Cp remains after the HfCp(edpa)3 adsorption. Accordingly, we observe proper ALD growth with self-limiting properties. Thus, a comparative study of different ligands of the precursors can provide critical clues to the design of alkoxide precursors for obtaining typical ALD growth with a saturation behavior.

Amidoxime-Containing Zr and Hf Atomic Layer Deposition Precursors for Metal Oxide Thin Films

In this article, we discuss the synthesis of eight novel zirconium and hafnium complexes containing amidoxime ligands as potential precursors for atomic layer deposition (ALD). Two amidoximes, viz., (E)-N'-hydroxy-N,N-dimethylacetimidamide (mdaoH) and (Z)-N'-hydroxy-N,N-dimethylpivalimidamide (tdaoH), along with their Zr and Hf homoleptic complexes, Zr(mdao)4 (1), Hf(mdao)4 (2), Zr(tdao)4 (3), and Hf(tdao)4 (4) were prepared. We further synthesized heteroleptic compounds with different physical properties by introducing cyclopentadienyl (Cp) ligand, namely, CpZr(mdao)3 (5), CpHf(mdao)3 (6), CpZr(tdao)3 (7), and CpHf(tdao)3 (8). Thermogravimetric analysis was used for the assessment of the evaporation characteristics of complexes 1, 2, 5, and 6, and it revealed multistep weight losses with high residues. On the other hand, the thermogravimetric analysis curves of complexes 3, 4, 7, and 8 comprising tdao ligands revealed single-step weight losses with moderate residues. Single-crystal X-ray diffraction studies of complexes 1, 3, and 7 showed that all of the complexes have monomeric molecular structures. Complex 7 exhibited a low melting point (75 °C), good volatility, and high thermal stability compared with other complexes. Therefore, an atomic layer deposition process for the growth of ZrO2 was developed by using ZrCp(tdao)3 (7) as a novel precursor.