Eu2+-Doped Sr2B2–2xSi2+3xAl2–xN8+x: A Boron-Containing Orange-Emitting Nitridosilicate with Interesting Composition-Dependent Photoluminescence Properties

Oxynitride K2Ba6.72Si16O40-1.5yNy:0.28Eu2+ phosphor with high thermal stability realized by crystal field engineering

Extensive research has gone into modifying the chemical composition of phosphors to achieve desirable optical properties. Here, oxynitride phosphors K2Ba6.72Si16O40-1.5yNy:0.28Eu2+ were synthesized by introducing N3- (y) into a K2Ba6.72Si16O40:0.28Eu2+ lattice. An uneven shrinking of the cell parameters a, b, and c was observed through a combination of X-ray diffraction studies and Rietveld refinements. This shrinking caused a large centroid shift (εc) and splitting of the 5d energy level (εcfs), thus inducing the broadening of the excitation spectra (104 → 127 nm, y = 0 → y = 12) and the red shift of the emission spectra (501 → 543 nm, y = 0 → y = 12). The modified series of samples have a broad excitation spectrum, suitable of use in UV, near-UV, and blue light-emitting LEDs. In addition, the optimal sample, K2Ba6.72Si16O31N6:0.28Eu2+, benefits from an increased activation energy and thermal stability.

A broadband yellow Yb2+-doped oxynitride phosphor for high-performance white light-emitting diodes

A broadband, efficient and stable yellow (Ba,Sr)Si3Al3O4N5:Yb2+ phosphor shows promising applications in single-phosphor-converted warm w-LEDs.

Novel Mn4+ doped red phosphors composed of MgAl2O4 and CaAl12O19 phases for light-emitting diodes

The EL spectra and photographs of the as-obtained plant growth LED and white LED by using CMA:Mn⁴⁺ red phosphors.

New Deep-Blue-Emitting Ce-Doped A4-mBnC19+2mX29+m (A = Sr, La; B = Li; C = Si, Al; X = O, N; 0 ≤ m ≤ 1; 0 ≤ n ≤ 1) Phosphors for High-Color-Rendering Warm White Light-Emitting Diodes

A new sialon Eu_3.60LiSi_13.78Al_6.03O_6.82N_22.59 has been discovered via the single-particle diagnosis approach. Its crystal structure (space group P3m1) was solved and refined from single-crystal X-ray diffraction data. It has the interesting feature of two types of disorder at the Eu2 site: positional disorder (Eu2a/Eu2b) and substitutional disorder with (Si/Al)₂(O/N). The structure is generalized to the formula A_4-mB_nC_19+2mX_29+m (A = Sr, La, Eu, Ce; B = Li; C = Si, Al; X = O, N; 0 ≤ m ≤ 1; 0 ≤ n ≤ 1), of which Sr_3.61LiSi_14.27Al_5.61O_6.19N_23.25 (Sr-sialon, m = 0.41, n = 1) and La_2.85Sr_0.76LiSi_14.86Al_4.93O_2.89N_26.51 (LaSr-sialon, m = 0.40, n = 1) are two examples that have been obtained as a single-phase powder. Sr-sialon:Eu and LaSr-sialon:Eu both show blue to yellow emission, depending on the Eu concentration, whereas Sr-sialon:1% Ce shows a deep-blue emission band centered at 422 nm with a full width at half-maximum of 80 nm and an internal quantum efficiency of 80% (λ_ex = 355 nm). The latter phosphor has very good thermal stability of both emission intensity and color. A white light-emitting diode (LED) containing the newly discovered Sr-sialon:5% Ce as the blue phosphor component shows excellent color-rendering indices (R_a = 96 and R₁₂ = 97) with a correlated color temperature of 4255 K. This indicates that Sr-sialon:Ce is a highly promising deep-blue phosphor for illumination grade white LEDs.

Synthesis, Crystal Structure, and Photoluminescence of the Boron-Aluminum-Silicon Nitride Phosphor Sr3BAl5Si9N20:Eu

Single crystals of new boron-aluminum-silicon nitrides, Sr₃BAl₅Si₉N₂₀ and Sr_2.91Eu_0.09BAl₅Si₉N₂₀, were synthesized by heating binary nitride mixtures at 2030 °C under a N₂ pressure of 0.85 MPa. The X-ray diffraction spots from single crystals of these two compounds were indexed with the trigonal cell parameters a = 22.7406(8) Å, c = 5.7066(2) Å and a = 22.7439(8) Å, c = 5.7050(2) Å, respectively, and the crystal structures were determined to have the space group P3 c1, with B atoms situated at planar 3-fold-coordinated N sites. A three-dimensional framework structure is constructed for these materials based on the sharing of N atoms of Al/Si-N₄ tetrahedra and B-N₃ triangles. In this framework, Sr/Eu atoms are located at three sites, surrounded by 10 N atoms. Single crystals of Sr_2.91Eu_0.09BAl₅Si₉N₂₀ emitted yellow light with a peak wavelength of 565 nm and a full width at half-maximum of 106 nm under 450 nm light irradiation. The emission intensity of these crystals at 200 °C was found to be 12% of the intensity at 25 °C.

Down-Conversion Nitride Materials for Solid State Lighting: Recent Advances and Perspectives

Advances in solid state white lighting technologies witness the explosive development of phosphor materials (down-conversion luminescent materials). A large amount of evidence has demonstrated the revolutionary role of the emerging nitride phosphors in producing superior white light-emitting diodes for lighting and display applications. The structural and compositional versatility together with the unique local coordination environments enable nitride materials to have compelling luminescent properties such as abundant emission colors, controllable photoluminescence spectra, high conversion efficiency, and small thermal quenching/degradation. Here, we summarize the state-of-art progress on this novel family of luminescent materials and discuss the topics of materials discovery, crystal chemistry, structure-related luminescence, temperature-dependent luminescence, and spectral tailoring. We also overview different types of nitride phosphors and their applications in solid state lighting, including general illumination, backlighting, and laser-driven lighting. Finally, the challenges and outlooks in this type of promising down-conversion materials are highlighted.