Theoretical Insights into Two-Dimensional IV–V Compounds: Photocatalysts for the Overall Water Splitting and Nanoelectronic Applications

Ab Initio Prediction of Two-Dimensional GeSiBi2 Monolayer as Potential Anode Materials for Sodium-Ion Batteries

The conceptualization and deployment of electrode materials for rechargeable sodium-ion batteries are key concerns for next-generation energy storage systems. In this contribution, the configuration stability of single-layer GeSiBi2 is systematically discussed based on first-principles calculations, and its potential as an anode material is further investigated. It is demonstrated that the phonon spectrum confirms the dynamic stability and the adsorption energy identifies a strong interaction between Na atoms and the substrate material. The electronic bands indicative of inherent metallicity contribute to the enhancement of electronic conductivity after Na adsorption. The multilayer adsorption of Na provides a theoretical capacity of 361.7 mAh/g, which is comparable to that of other representative two-dimensional anode materials. Moreover, the low diffusion barriers of 0.19 and 0.15 eV further guarantee the fast diffusion kinetics. These contributions signal that GeSiBi2 can be a compatible candidate for sodium-ion batteries anodes.

Tunable Photocatalytic Water Splitting Performance of Armchair MoSSe Nanotubes Realized by Polarization Engineering

The photocatalytic properties of Janus transition metal dichalcogenide (TMD) nanotubes are closely correlated with the electrostatic potential difference between their inner and outer surfaces (ΔΦ). However, due to some distraction from the tubular structures, it remains a great challenge to calculate their ΔΦ directly. Here, we creatively work out the ΔΦ of Janus MoSSe armchair single-walled nanotubes (A-SWNTs) with their corresponding building block models by first-principles calculations. The ΔΦ increases as the diameter reduces. After considering ΔΦ, we find that all of these MoSSe A-SWNTs possess suitable band-edge positions required for water redox reactions and high solar-to-hydrogen (STH) conversion efficiencies. The built-in field induced by the ΔΦ promotes the oxygen evolution reaction (OER) and hydrogen evolution reaction (HER) to proceed separately on the inner and outer surfaces. Especially, the photoexcited carriers exhibit adequate driving forces for OER and HER. Besides, constructing a double-walled nanotube can dramatically increase ΔΦ, which also further improves the separation and redox capacity of photoexcited carriers as well as the STH conversion efficiency. Moreover, all of these MoSSe armchair nanotubes have outstanding optical absorption in the visible light range. Our studies provide an effective strategy to improve the photocatalytic water-splitting performance of Janus TMD nanotubes.

Atom Substitution Defects of Hexagonal Boron Phosphide Suppress Charge Recombination

Point defects, during e-h recombination, are a key factor in impacting optoelectronic device performance. Using nonadiabatic molecular dynamics (NAMD), here we investigate the nonradiative recombination of pristine, missing atom defects, including phosphorus vacancies (V_P) and phosphorus and boron vacancies (V_BP), and atom substitution defects, containing boron on the phosphorus site (B_P) and phosphorus on the boron site (P_B) of 2D monolayer hexagonal boron phosphide (h-BP). Carrier dynamics in the pristine h-BP and the defect engineered systems reveal that atom substitution defects B_P and P_B can suppress e-h nonradiative recombination. This is caused by the introduction of several low-frequency phonons in defect states. Electron-phonon coupling between the electronic state and these low-frequency phonons shortens the decoherence time and the nonadiabatic coupling. Also, the atom substitution systems with one defect state introduce fewer carrier recombination channels. Such a mechanism can be extended to other 2D materials with the same structure as h-BP.

Electronic and photochemical properties of hybrid binary silicon and germanium derived Janus monolayers

The electronic structures and optical properties of a novel class of hybrid binary Janus materials derived from IV-V groups were investigated using first principles calculations. The computational results demonstrated that, except for Ge₂NAs, all the other five structures of M₂XY monolayers (M = Si, Ge; X, Y = N, P, As; X ≠ Y) have excellent thermal and dynamical stabilities. Janus Si₂NP, Si₂NAs, Si₂PAs and Ge₂NP are semiconductors with direct band gaps spanning the range between 0.82 and 2.49 eV. Notably, the hybrid M₂XY materials exhibit highly efficient absorption within the visible light region, which are greatly higher than their pristine MX structures. Janus Si₂PAs and Ge₂PAs possess appropriate band edge alignments that straddle the water redox potentials in the pH range from 0 to 14, making them promising photocatalysts for water splitting under visible light. Our calculations further demonstrate that the catalytic selectivity for the water splitting reaction could be achieved through the hybrid Janus M₂XY, where, for instance, Ge₂NP appears to facilitate only the oxidation, but not the reduction of water under certain conditions. This outcome provides a new route for the design of novel photocatalysts with improved efficiency and selectivity.

Planar Multilayered 2D GeAs Schottky Photodiode for High-Performance Visible-Near-Infrared Photodetection

Novel group IV - V 2D semiconductors (e.g., GeAs and SiAs) have arisen as an attractive candidate for broad-band photodetection and optoelectronic applications. This 2D family has a wide tunable band gap, excellent thermodynamic stability, and strong in-plane anisotropy. However, their photonic and optoelectronic properties have not been extensively explored so far. This work demonstrates a broadband back-to-back metal-semiconductor-metal (MSM) Schottky photodiode with asymmetric contact geometries based on multilayered 2D GeAs. The photodetector exhibited a Schottky barrier height (SBH) in the range of 0.40-0.49 eV. Additionally, it showed a low dark current of 1.8 nA with stable, reproducible, and excellent broadband spectral response from UV to optical communication wavelengths. The highest measured responsivity in the visible is 905 A/W at 660 nm wavelength and 98 A/W for 1064 nm near-infrared at an applied voltage of -3 V and zero back gate. Most notably, the planner configuration of this GeAs photodetector showed a low detector capacitance below 1.2 pf and low voltage operation (<1 V). The stability and broadband response of the device are promising for this 2D material's application in advanced optoelectronic devices.

Anisotropic 2D SiAs for High-Performance UV-Visible Photodetectors

Recently, extensive efforts have been directed at finding novel 2D-layered structures with anisotropic crystal structures. Herein, the in-plane anisotropic optical and (photo)electrical properties of 2D SiAs nanosheets synthesized using a solid-state reaction and subsequent mechanical exfoliation are reported. The angle-resolved polarized Raman spectrum shows high in-plane anisotropy of the phonon vibration modes, which are consistent with the theoretical prediction. Field-effect transistor devices fabricated using the SiAs nanosheets demonstrate significant anisotropy in the hole mobility with an anisotropic ratio as high as 5.5. Photodetectors fabricated with single SiAs nanosheet exhibit high sensitivity in the UV-visible region, and the anisotropic ratio of the photocurrent reaches 5.3 at 514.5 nm and 2.3 at 325 nm. This work lays the foundation for future research in anisotropic 2D materials.

The unique carrier mobility of monolayer Janus MoSSe nanoribbons: a first-principles study

Charge-carrier mobility is a determining factor of the transport properties of semiconductor materials and is strongly related to the optoelectronic performance of nanoscale devices. Here, we investigate the electronic properties and charge carrier mobility of monolayer Janus MoSSe nanoribbons by means of first-principles simulations coupled with deformation potential theory. These simulations indicate that zigzag nanoribbons are metallic. Conversely, armchair nanoribbons are semiconducting and show oscillations in the calculated band gap as a function of edge-width according to the 3p < 3p + 1 < 3p + 2 rule, with p being the integer number of repeat units along the non-periodic direction of the nanoribbon. Although the charge-carrier mobility of armchair nanoribbons oscillates with the edge-width, its magnitude is comparable to its two-dimensional sheet counterpart. A robust room-temperature carrier mobility is calculated for 3.5 nm armchair nanoribbons with values ranging from 50 cm2 V-1 s-1 to 250 cm2 V-1 s-1 for electrons (e) and holes (h), respectively. A comparison of these values with the results for periodic flat sheet (e: 73.8 cm2 V-1 s-1; h: 157.2 cm2 V-1 s-1) reveals enhanced (suppressed) hole (electron) mobility in the Janus MoSSe nanoribbons. This is in contrast to what was previously found for MoS2 nanoribbons, namely larger mobility for electrons in comparison with holes. These differences are rationalized on the basis of the different structures, edge electronic states and deformation potentials present in the MoSSe nanoribbons. The present results provide the guidelines for the structural and electronic engineering of MoSSe nanoribbon edges towards tailored electron transport properties.

Intrinsic defect engineered Janus MoSSe sheet as a promising photocatalyst for water splitting

The Janus MoSSe sheet has aroused significant attention due to its band edge position and intrinsic dipole moment, making it a strong candidate for water splitting photocatalysis. However, weak water adsorption seriously prevents its further application. Here, first-principles calculations are used to explore the effect of intrinsic defects on water adsorption and conversion at the Janus MoSSe sheet. First-principles calculation results clearly show that intrinsic defects (Svac, Moanti, and Moint) can effectively alter the interaction between water and the MoSSe sheet. Except for Svac defects, the adsorption energy of water at Moanti or Moint defects can be significantly increased by -1.0 to -1.5 eV with respect to the weak water adsorption on a pristine MoSSe sheet of about -0.24 eV. More importantly, the energy barrier for water conversion can be dramatically lowered by 48% to 0.7 eV at Moanti or Moint defects, together with a more stable final state. Such significant enhancement of the adsorption energy is attributed to the red shift of water energy levels, resulting from the strong interaction between O2p orbitals and Mo3d orbitals. It is shown that the intrinsic defects have the potential to change the photocatalytic reactivity of the surface, and thus this may serve as an important way to design photocatalysts for water splitting.