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Yang J, Huang X, Xu X, Lu H, Wang S, Wu S. Layered Chalcogenide Scintillators Enabled by Reversible Hydrous-Induced Phase Transformation for High-Resolution X-ray Imaging. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38497330 DOI: 10.1021/acsami.3c19558] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/19/2024]
Abstract
Scintillation materials have been widely used in various fields, such as medical diagnosis and industrial detection. Chalcogenides have the potential to become a new generation of high-performance scintillation materials due to their high effective atomic number and good resistance to radiation damage. However, research on their application in radiation detection is currently very scarce. Herein, single crystals of rare earth ion-doped ternary chalcogenides NaGaS2/Eu were grown by a high-temperature solid-phase method. It exhibits unique characteristics of structure transformation by absorbing water molecules from the air. To maintain the anhydrous phase of the material, we have used a strategy of organic-inorganic composites of epoxy resin and NaGaS2/Eu to prepare devices for radiation detection and discuss the irradiation luminescence properties of the two phases. The anhydrous phase of NaGaS2/Eu demonstrates excellent sensitivity to X-rays, with a low detection limit of 250 nGy s-1, which is approximately 1/22 of the medical imaging dose. Additionally, composite flexible films were prepared, which exhibited excellent performance in X-ray imaging. These films enable clear observation of a wide range of objects with a high spatial resolution of up to 13.2 line pairs per millimeter (lp mm-1), indicating that chalcogenide holds promising prospects in the realm of X-ray imaging applications.
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Affiliation(s)
- Jinhai Yang
- College of Chemistry, Fuzhou University, Fuzhou 350108, PR China
- Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
| | - Xixi Huang
- College of Chemistry, Fuzhou University, Fuzhou 350108, PR China
- Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
| | - Xieming Xu
- Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350108, China
| | - Hao Lu
- Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
- University of the Chinese Academy of Sciences, Beijing 100049, China
| | - Shuaihua Wang
- Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350108, China
| | - Shaofan Wu
- Key Laboratory of Optoelectronic Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian 350108, China
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Almoussawi B, Duffort V, Arevalo-Lopez AM, Braun M, Djelal N, Kabbour H. Preparation, characterization and DFT+U study of the polar Fe 3+-based phase Ba 5Fe 2ZnIn 4S 15 containing S= 5/2 zigzag chains. Dalton Trans 2022; 51:9522-9530. [DOI: 10.1039/d2dt00733a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The polar magnetic chalcogenide phase Ba5Fe2ZnIn4S15 was synthesized and its structure solved from single crystal XRD. It is the first member with a 3d magnetic metal (Fe3+) in the Pb5ZnGa6S15-type...
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Liu KL, Luo MB, Zhou X, Lin Q. Cationic complex directed thiostannate layers with excellent proton conduction and photocatalysis properties. CrystEngComm 2022. [DOI: 10.1039/d2ce00043a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Three isostructural thiostannates SnS-M (M = Fe, Mn and Zn) have been fabricated using metal-amine complex cations as structure-directing agents. These thiostannates are composed of typical two-dimensional lamellar [Sn3S7]n2n- anionic...
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Sun M, Zhang X, Xing W, Li Z, Liu W, Lin Z, Yin W, Yao J. Synthesis and Characterizations of Two Tellurides β-BaGa 2Te 4 and Ba 5Ga 2Ge 3Te 12 with Flexible Chain Structure. Inorg Chem 2021; 60:14793-14802. [PMID: 34529425 DOI: 10.1021/acs.inorgchem.1c02045] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
Demands for IR birefringent materials are increasing due to the rapid developments of IR laser applications. Herein, two new chain tellurides β-BaGa2Te4 and Ba5Ga2Ge3Te12 have been discovered. β-BaGa2Te4 crystallizes in the orthorhombic space group Imma (no. 74) with unit cell constants of a = 23.813(3) Å, b = 11.9673(19) Å, and c = 6.7215(9) Å, while Ba5Ga2Ge3Te12 crystallizes in the monoclinic space group P21/c (no. 14) with unit cell constants of a = 13.6540(3) Å, b = 9.6705(2) Å, and c = 23.1134(7) Å. The structure of β-BaGa2Te4 can be considered to be the antiparallel arrangement of one-dimensional (1D) [GaTe2] chains formed by edge-sharing GaTe4 tetrahedra, which are separated by Ba2+ cations. In the crystal structure of Ba5Ga2Ge3Te12, two kinds of 1D chains, namely chain 1 ∞1[(GaGe)3Te8] and chain 2 ∞1[(GaGe)2Te4], are stacked alternately and put together by the coulomb force with Ba2+ cations. In addition, First-principles calculations indicate that β-BaGa2Te4 has a large birefringence, ∼0.325 at 2050 nm, derived from the superposition of the polarizabilities of GaTe4 tetrahedra, implying that it has potential as an IR birefringent material. This work may provide some guidance for exploring new IR birefringent crystals.
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Affiliation(s)
- Mengran Sun
- Beijing Center for Crystal Research and Development, Key Lab of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Xingyu Zhang
- Beijing Center for Crystal Research and Development, Key Lab of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Wenhao Xing
- Beijing Center for Crystal Research and Development, Key Lab of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Zhuang Li
- Beijing Center for Crystal Research and Development, Key Lab of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Wenhao Liu
- Beijing Center for Crystal Research and Development, Key Lab of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Zheshuai Lin
- Beijing Center for Crystal Research and Development, Key Lab of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
| | - Wenlong Yin
- Institute of Chemical Materials, China Academy of Engineering Physics, Mianyang 621900, P.R. China
| | - Jiyong Yao
- Beijing Center for Crystal Research and Development, Key Lab of Functional Crystals and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, P.R. China.,Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P.R. China
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Abudurusuli A, Li J, Tong T, Yang Z, Pan S. LiBa4Ga5Q12 (Q = S, Se): Noncentrosymmetric Metal Chalcogenides with a Cesium Chloride Topological Structure Displaying a Remarkable Laser Damage Threshold. Inorg Chem 2020; 59:5674-5682. [DOI: 10.1021/acs.inorgchem.0c00431] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/16/2022]
Affiliation(s)
- Ailijiang Abudurusuli
- CAS Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, 40-1 South Beijing Road, Urumqi 830011, People’s Republic of China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, People’s Republic of China
| | - Junjie Li
- CAS Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, 40-1 South Beijing Road, Urumqi 830011, People’s Republic of China
| | - Tinghao Tong
- CAS Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, 40-1 South Beijing Road, Urumqi 830011, People’s Republic of China
| | - Zhihua Yang
- CAS Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, 40-1 South Beijing Road, Urumqi 830011, People’s Republic of China
| | - Shilie Pan
- CAS Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics & Chemistry, CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, 40-1 South Beijing Road, Urumqi 830011, People’s Republic of China
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