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Guo J, Zhou L, Ding J, Qu G, Liu Z, Du Y, Zhang H, Li J, Zhang Y, Zhou F, Qi W, Cui M, Zhang Y, Guo F, Wang T, Fei F, Huang Y, Qian T, Shen D, Song Y, Weng H, Song F. Tunable magnetism and band structure in kagome materials RETi 3Bi 4 family with weak interlayer interactions. Sci Bull (Beijing) 2024; 69:2660-2664. [PMID: 39060216 DOI: 10.1016/j.scib.2024.06.036] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/04/2024] [Revised: 05/10/2024] [Accepted: 06/24/2024] [Indexed: 07/28/2024]
Affiliation(s)
- Jingwen Guo
- National Laboratory of Solid State Microstructures, School of Physics, School of Materials Science and Intelligent Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Liqin Zhou
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; University of Chinese Academy of Sciences, Beijing 100049, China
| | - Jianyang Ding
- State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
| | - Gexing Qu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhengtai Liu
- Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210, China
| | - Yu Du
- National Laboratory of Solid State Microstructures, School of Physics, School of Materials Science and Intelligent Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Heng Zhang
- National Laboratory of Solid State Microstructures, School of Physics, School of Materials Science and Intelligent Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Jiajun Li
- National Laboratory of Solid State Microstructures, School of Physics, School of Materials Science and Intelligent Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Yiying Zhang
- National Laboratory of Solid State Microstructures, School of Physics, School of Materials Science and Intelligent Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Fuwei Zhou
- National Laboratory of Solid State Microstructures, School of Physics, School of Materials Science and Intelligent Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Wuyi Qi
- National Laboratory of Solid State Microstructures, School of Physics, School of Materials Science and Intelligent Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Minghui Cui
- State Key Laboratory of Coordination Chemistry, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China
| | - Yongxin Zhang
- National Laboratory of Solid State Microstructures, School of Physics, School of Materials Science and Intelligent Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Fengyi Guo
- National Laboratory of Solid State Microstructures, School of Physics, School of Materials Science and Intelligent Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Tianqi Wang
- National Laboratory of Solid State Microstructures, School of Physics, School of Materials Science and Intelligent Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Fucong Fei
- National Laboratory of Solid State Microstructures, School of Physics, School of Materials Science and Intelligent Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China; Atom Manufacturing Institute, Nanjing 211806, China.
| | - Yaobo Huang
- Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210, China
| | - Tian Qian
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Dawei Shen
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230029, China
| | - You Song
- State Key Laboratory of Coordination Chemistry, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, China
| | - Hongming Weng
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China; University of Chinese Academy of Sciences, Beijing 100049, China; Songshan Lake Materials Laboratory, Dongguan 523808, China.
| | - Fengqi Song
- National Laboratory of Solid State Microstructures, School of Physics, School of Materials Science and Intelligent Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China; Atom Manufacturing Institute, Nanjing 211806, China.
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Jiang Z, Li T, Yuan J, Liu Z, Cao Z, Cho S, Shu M, Yang Y, Li Z, Liu J, Ding J, Liu Z, Liu J, Ma J, Sun Z, Wan X, Guo Y, Shen D, Feng D. Topological surface states in quasi-two-dimensional magnetic kagome metal EuTi 3Bi 4. Sci Bull (Beijing) 2024:S2095-9273(24)00596-6. [PMID: 39232908 DOI: 10.1016/j.scib.2024.08.019] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/06/2024]
Affiliation(s)
- Zhicheng Jiang
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China; Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210, China
| | - Tongrui Li
- National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026, China
| | - Jian Yuan
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Zhengtai Liu
- Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210, China; National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, China.
| | - Zhipeng Cao
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Soohyun Cho
- National Synchrotron Radiation Laboratory and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei 230026, China
| | - Mingfang Shu
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China; Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Yichen Yang
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
| | - Zhikai Li
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Jiayu Liu
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
| | - Jianyang Ding
- National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
| | - Zhonghao Liu
- Institute of High-Pressure Physics and School of Physical Science and Technology, Ningbo University, Ningbo 315211, China
| | - Jishan Liu
- Shanghai Synchrotron Radiation Facility, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai 201210, China; National Key Laboratory of Materials for Integrated Circuits, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences, Shanghai 200050, China
| | - Jie Ma
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China; Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Shenyang National Laboratory for Materials Science, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240, China
| | - Zhe Sun
- National Synchrotron Radiation Laboratory and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei 230026, China
| | - Xiangang Wan
- National Laboratory of Solid State Microstructures, School of Physics, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China.
| | - Yanfeng Guo
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China; ShanghaiTech Laboratory for Topological Physics, ShanghaiTech University, Shanghai 201210, China.
| | - Dawei Shen
- National Synchrotron Radiation Laboratory and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei 230026, China.
| | - Donglai Feng
- National Synchrotron Radiation Laboratory and School of Nuclear Science and Technology, University of Science and Technology of China, Hefei 230026, China; New Cornerstone Science Laboratory, University of Science and Technology of China, Hefei 230026, China; Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
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Ovchinnikov A, Mudring AV. Flux Growth, Crystal Structures, and Electronic Properties of the Ternary Intermetallic Compounds Ca 3Pd 4Bi 8 and Ca 3Pt 4Bi 8. Inorg Chem 2022; 61:9756-9766. [PMID: 35704846 PMCID: PMC9490834 DOI: 10.1021/acs.inorgchem.2c01248] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
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Reaction of the elements
yielded Ca3Pt4Bi8 and CaPtBi, which are, to the best of our knowledge, the first reported ternary Ca–Pt–Bi
compounds. The compounds crystallize isostructural to the Pd analogs
Ca3Pd4Bi8 (own structure type) and
CaPdBi (TiNiSi structure type), respectively. Employing a multistep
temperature treatment allows for the growth of mm-sized single crystals
of Ca3Pd4Bi8 and Ca3Pt4Bi8 from a Bi self-flux. Their crystal structures
can be visualized as consisting of a three-dimensional extended polyanion
[M4Bi8]6– (M = Pd, Pt), composed
of interlinked M–Bi chains propagating along the c direction, and Ca2+ cations residing in one-dimensional
channels between the chains. First-principles calculations reveal
quasi-one-dimensional electronic behavior with reduced effective electron
masses along [001]. Bader analysis points to a strong anionic character
of the M species (M = Pd, Pt) in Ca3M4Bi8. Thus, it is more appropriate to address the compounds Ca3Pd4Bi8 and Ca3Pt4Bi8 as a palladide and platinide, respectively. Magnetization
measurements indicate diamagnetic behavior with no indications for
superconductivity down to 2 K. Electrical resistivity data are consistent
with metallic behavior and suggest predominant electron–phonon
scattering. Reaction of the elements yielded
Ca3Pt4Bi8 and CaPtBi, which are,
to the best of our knowledge,
the first reported ternary Ca−Pt−Bi compounds.
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Affiliation(s)
- Alexander Ovchinnikov
- Department of Materials and Environmental Chemistry, Stockholm University, Svante Arrhenius väg 16 C, 10691 Stockholm, Sweden
| | - Anja-Verena Mudring
- Department of Materials and Environmental Chemistry, Stockholm University, Svante Arrhenius väg 16 C, 10691 Stockholm, Sweden.,Department of Chemistry, Aarhus University, Langelandsgade 140, 8000 Aarhus C, Denmark
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Ovchinnikov A, Bobev S. Studied and Forgotten. A Fresh Look at the Li–Mn–Ge System. Z Anorg Allg Chem 2020. [DOI: 10.1002/zaac.202000133] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/06/2022]
Affiliation(s)
- Alexander Ovchinnikov
- Department of Chemistry and Biochemistry University of Delaware 19716 Newark Delaware USA
- Department of Materials and Environmental Chemistry Stockholm University Svante Arrhenius väg 16C 10691 Stockholm Sweden
| | - Svilen Bobev
- Department of Chemistry and Biochemistry University of Delaware 19716 Newark Delaware USA
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Ovchinnikov A, Bobev S. Electronic stabilization by occupational disorder in the ternary bismuthide Li 3-x-yIn xBi (x ≃ 0.14, y ≃ 0.29). Acta Crystallogr C Struct Chem 2020; 76:585-590. [PMID: 32499456 DOI: 10.1107/s2053229620006439] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/16/2020] [Accepted: 05/13/2020] [Indexed: 11/10/2022] Open
Abstract
A ternary derivative of Li3Bi with the composition Li3-x-yInxBi (x ≃ 0.14, y ≃ 0.29) was produced by a mixed In+Bi flux approach. The crystal structure adopts the space group Fd-3m (No. 227), with a = 13.337 (4) Å, and can be viewed as a 2 × 2 × 2 superstructure of the parent Li3Bi phase, resulting from a partial ordering of Li and In in the tetrahedral voids of the Bi fcc packing. In addition to the Li/In substitutional disorder, partial occupation of some Li sites is observed. The Li deficiency develops to reduce the total electron count in the system, counteracting thereby the electron doping introduced by the In substitution. First-principles calculations confirm the electronic rationale of the observed disorder.
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Affiliation(s)
- Alexander Ovchinnikov
- Department of Materials and Environmental Chemistry, Stockholm University, Svante Arrhenius väg 16C, SE-10691, Stockholm, Sweden
| | - Svilen Bobev
- Department of Chemistry and Biochemistry, University of Delaware, Newark, DE 19716, USA
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Ovchinnikov A, Bobev S. Exploration of Multi-Component Vanadium and Titanium Pnictides Using Flux Growth and Conventional High-Temperature Methods. Front Chem 2020; 7:909. [PMID: 31998696 PMCID: PMC6965498 DOI: 10.3389/fchem.2019.00909] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/21/2019] [Accepted: 12/16/2019] [Indexed: 11/13/2022] Open
Abstract
The flux growth method was successfully employed to synthesize millimeter-sized single crystals of the ternary barium vanadium pnictides Ba5V12As19+x (x ≈ 0.02) and Ba5V12Sb19+x (x ≈ 0.36), using molten Pb and Sb, respectively. Both compositions crystallize in space group P 4 ¯ 3m and adopt a structure similar to those of the barium titanium pnictides Ba5Ti12 Pn 19+x (Pn = Sb, Bi), yet with a subtly different disorder, involving the pnictogen and barium atoms. Attempts to obtain an arsenide analog of Ba5Ti12 Pn 19+x using a Pb flux technique yielded binary arsenides. High-temperature treatment of the elements Ba, Ti, and As in Nb or Ta tubes resulted in side reactions with the crucible materials and produced two isostructural compositions Ba8Ti13-x M x As21 (M = Nb, Ta; x ≈ 4), representing a new structure type. The latter structure displays fcc-type metal clusters comprised of statistically distributed Ti and M atoms (M = Nb, Ta) with multi-center and two-center bonding within the clusters, as suggested by our first-principle calculations.
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Affiliation(s)
- Alexander Ovchinnikov
- Department of Chemistry and Biochemistry, University of Delaware, Newark, DE, United States.,Department of Materials and Environmental Chemistry, Stockholm University, Stockholm, Sweden
| | - Svilen Bobev
- Department of Chemistry and Biochemistry, University of Delaware, Newark, DE, United States
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