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Aslandukova A, Aslandukov A, Akbar FI, Yin Y, Trybel F, Hanfland M, Pakhomova A, Chariton S, Prakapenka V, Dubrovinskaia N, Dubrovinsky L. High-Pressure oC16-YBr 3 Polymorph Recoverable to Ambient Conditions: From 3D Framework to Layered Material. Inorg Chem 2024; 63:15611-15618. [PMID: 38953784 DOI: 10.1021/acs.inorgchem.4c00813] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 07/04/2024]
Abstract
Exfoliation of graphite and the discovery of the unique properties of graphene─graphite's single layer─have raised significant attention to layered compounds as potential precursors to 2D materials with applications in optoelectronics, spintronics, sensors, and solar cells. In this work, a new orthorhombic polymorph of yttrium bromide, oC16-YBr3 was synthesized from yttrium and CBr4 in a laser-heated diamond anvil cell at 45 GPa and 3000 K. The structure of oC16-YBr3 was solved and refined using in situ synchrotron single-crystal X-ray diffraction. At high pressure, it can be described as a 3D framework of YBr9 polyhedra, but upon decompression below 15 GPa, the structure motif changes to layered, with layers comprising edge-sharing YBr8 polyhedra weakly bonded by van der Waals interactions. The layered oC16-YBr3 material can be recovered to ambient conditions, and according to Perdew-Burke-Ernzerhof-density functional theory calculations, it exhibits semiconductor properties with a band gap that is highly sensitive to pressure. This polymorph possesses a low exfoliation energy of 0.30 J/m2. Our results expand the list of layered trivalent rare-earth metal halides and provide insights into how high pressure alters their structural motifs and physical properties.
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Affiliation(s)
- Alena Aslandukova
- Bavarian Research Institute of Experimental Geochemistry and Geophysics (BGI), University of Bayreuth, 95440 Bayreuth, Germany
| | - Andrey Aslandukov
- Bavarian Research Institute of Experimental Geochemistry and Geophysics (BGI), University of Bayreuth, 95440 Bayreuth, Germany
- Material Physics and Technology at Extreme Conditions, Laboratory of Crystallography, University of Bayreuth, 95440 Bayreuth, Germany
| | - Fariia Iasmin Akbar
- Bavarian Research Institute of Experimental Geochemistry and Geophysics (BGI), University of Bayreuth, 95440 Bayreuth, Germany
| | - Yuqing Yin
- Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping, Sweden
| | - Florian Trybel
- Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping, Sweden
| | - Michael Hanfland
- European Synchrotron Radiation Facility, BP 220, 38043 Grenoble Cedex, France
| | - Anna Pakhomova
- European Synchrotron Radiation Facility, BP 220, 38043 Grenoble Cedex, France
| | - Stella Chariton
- Center for Advanced Radiation Sources, University of Chicago, Chicago, Illinois 60637, United States
| | - Vitali Prakapenka
- Center for Advanced Radiation Sources, University of Chicago, Chicago, Illinois 60637, United States
| | - Natalia Dubrovinskaia
- Material Physics and Technology at Extreme Conditions, Laboratory of Crystallography, University of Bayreuth, 95440 Bayreuth, Germany
- Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-581 83 Linköping, Sweden
| | - Leonid Dubrovinsky
- Bavarian Research Institute of Experimental Geochemistry and Geophysics (BGI), University of Bayreuth, 95440 Bayreuth, Germany
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Sui Z, Wang J, Huang D, Wang X, Dai R, Wang Z, Zheng X, Zhang Z, Wu Q. Orthorhombic-to-Hexagonal Phase Transition of REF 3 (RE = Sm to Lu and Y) under High Pressure. Inorg Chem 2022; 61:15408-15415. [PMID: 36126270 DOI: 10.1021/acs.inorgchem.2c01891] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Abstract
For the famous functional REF3 family, there exist two typical structures, that is, orthorhombic phase and hexagonal phase. In the present work, high pressure behaviors of the orthorhombic phase REF3 (RE = Sm to Lu and Y) were investigated by experimental methods and first-principles calculations. The pressure-induced phase transitions of GdF3, TbF3, YbF3, and LuF3 were studied by using in situ photoluminescence measurements in the diamond anvil cell. At room temperature, all these four compounds follow the phase transition route from orthorhombic to hexagonal phase at 5.5-20.6 GPa. The pressure ranges of phase transition are 5.5-9.3, 8.4-11.9, 13.5-20.3, and 14.8-20.6 GPa for GdF3, TbF3, YbF3, and LuF3, respectively. In combination with first-principles calculations, we infer that all orthorhombic REF3 members from Sm-Lu and Y obey the same orthorhombic-to-hexagonal phase transition rules under high pressures. For lanthanide trifluorides, the transition pressures increase as zero pressure volumes of REF3 in the orthorhombic phase become smaller. As the calculation results show, this is because the difference in value of energy from the two structures is larger. This work not only provides precise structural change but also benefits the understanding of two typical structures for rare-earth trifluorides, which may play a significant role in the applications of REF3.
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Affiliation(s)
- Zhilei Sui
- Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang, Sichuan 621900, China
| | - Junke Wang
- Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Da Huang
- Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Xiangqi Wang
- Department of Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Rucheng Dai
- The Centre for Physical Experiments, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Zhongping Wang
- The Centre for Physical Experiments, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Xianxu Zheng
- Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang, Sichuan 621900, China
| | - Zengming Zhang
- The Centre for Physical Experiments, University of Science and Technology of China, Hefei, Anhui 230026, China.,Key Laboratory of Strongly-Coupled Quantum Matter Physics, School of Physical Sciences, University of Science and Technology of China, Chinese Academy of Sciences, Hefei, Anhui 230026, China
| | - Qiang Wu
- Institute of Fluid Physics, China Academy of Engineering Physics, Mianyang, Sichuan 621900, China
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Anders J, Limberg N, Paulus B. First Principle Surface Analysis of YF 3 and Isostructural HoF 3. MATERIALS (BASEL, SWITZERLAND) 2022; 15:6048. [PMID: 36079428 PMCID: PMC9457200 DOI: 10.3390/ma15176048] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/03/2022] [Revised: 08/22/2022] [Accepted: 08/24/2022] [Indexed: 06/15/2023]
Abstract
The trifluorides of the two high field strength elements yttrium and holmium are studied by periodic density functional theory. As a lanthanide, holmium also belongs to the group of rare earth elements (REE). Due to their equivalent geochemical behavior, both elements form a geochemical twin pair and consequently, yttrium is generally associated with the REE as REE+Y. Interestingly, it has been found that DFT/DFT+U describe bulk HoF3 best, when the 4f-electrons are excluded from the valence region. An extensive surface stability analysis of YF3 (PBE) and HoF3 (PBE+Ud/3 eV/4f-in-core) using two-dimensional surface models (slabs) is performed. All seven low-lying Miller indices surfaces are considered with all possible stoichiometric or substoichiometric terminations with a maximal fluorine-deficit of two. This leads to a scope of 24 terminations per compound. The resulting Wulff plots consists of seven surfaces with 5-26% abundance for YF3 and six surfaces with 6-34% for HoF3. The stoichiometric (010) surface is dominating in both compounds. However, subtle differences have been found between these two geochemical twins.
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Muscarella LA, Hutter EM. Halide Double-Perovskite Semiconductors beyond Photovoltaics. ACS ENERGY LETTERS 2022; 7:2128-2135. [PMID: 35719270 PMCID: PMC9199010 DOI: 10.1021/acsenergylett.2c00811] [Citation(s) in RCA: 18] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/07/2022] [Accepted: 05/13/2022] [Indexed: 05/21/2023]
Abstract
Halide double perovskites, A2MIMIIIX6, offer a vast chemical space for obtaining unexplored materials with exciting properties for a wide range of applications. The photovoltaic performance of halide double perovskites has been limited due to the large and/or indirect bandgap of the presently known materials. However, their applications extend beyond outdoor photovoltaics, as halide double perovskites exhibit properties suitable for memory devices, indoor photovoltaics, X-ray detectors, light-emitting diodes, temperature and humidity sensors, photocatalysts, and many more. This Perspective highlights challenges associated with the synthesis and characterization of halide double perovskites and offers an outlook on the potential use of some of the properties exhibited by this so far underexplored class of materials.
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Sebti E, Evans HA, Chen H, Richardson PM, White KM, Giovine R, Koirala KP, Xu Y, Gonzalez-Correa E, Wang C, Brown CM, Cheetham AK, Canepa P, Clément RJ. Stacking Faults Assist Lithium-Ion Conduction in a Halide-Based Superionic Conductor. J Am Chem Soc 2022; 144:5795-5811. [PMID: 35325534 PMCID: PMC8991002 DOI: 10.1021/jacs.1c11335] [Citation(s) in RCA: 23] [Impact Index Per Article: 11.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/26/2021] [Indexed: 12/24/2022]
Abstract
In the pursuit of urgently needed, energy dense solid-state batteries for electric vehicle and portable electronics applications, halide solid electrolytes offer a promising path forward with exceptional compatibility against high-voltage oxide electrodes, tunable ionic conductivities, and facile processing. For this family of compounds, synthesis protocols strongly affect cation site disorder and modulate Li+ mobility. In this work, we reveal the presence of a high concentration of stacking faults in the superionic conductor Li3YCl6 and demonstrate a method of controlling its Li+ conductivity by tuning the defect concentration with synthesis and heat treatments at select temperatures. Leveraging complementary insights from variable temperature synchrotron X-ray diffraction, neutron diffraction, cryogenic transmission electron microscopy, solid-state nuclear magnetic resonance, density functional theory, and electrochemical impedance spectroscopy, we identify the nature of planar defects and the role of nonstoichiometry in lowering Li+ migration barriers and increasing Li site connectivity in mechanochemically synthesized Li3YCl6. We harness paramagnetic relaxation enhancement to enable 89Y solid-state NMR and directly contrast the Y cation site disorder resulting from different preparation methods, demonstrating a potent tool for other researchers studying Y-containing compositions. With heat treatments at temperatures as low as 333 K (60 °C), we decrease the concentration of planar defects, demonstrating a simple method for tuning the Li+ conductivity. Findings from this work are expected to be generalizable to other halide solid electrolyte candidates and provide an improved understanding of defect-enabled Li+ conduction in this class of Li-ion conductors.
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Affiliation(s)
- Elias Sebti
- Materials
Department, University of California, Santa Barbara, California 93106, United States
- Materials
Research Laboratory, University of California, Santa Barbara, California 93106, United States
| | - Hayden A. Evans
- Center
for Neutron Research, National Institute
of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Hengning Chen
- Department
of Materials Science and Engineering, National
University of Singapore, 9 Engineering Drive 1, 117575, Singapore
| | - Peter M. Richardson
- Materials
Department, University of California, Santa Barbara, California 93106, United States
- Materials
Research Laboratory, University of California, Santa Barbara, California 93106, United States
| | - Kelly M. White
- Chemistry
and Biochemistry Department, University
of California, Santa Barbara, California 93106, United States
- Materials
Research Laboratory, University of California, Santa Barbara, California 93106, United States
| | - Raynald Giovine
- Materials
Department, University of California, Santa Barbara, California 93106, United States
- Materials
Research Laboratory, University of California, Santa Barbara, California 93106, United States
| | - Krishna Prasad Koirala
- Physical
and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, United States
| | - Yaobin Xu
- Environmental
Molecular Sciences Laboratory, Pacific Northwest
National Laboratory, Richland, Washington 99352, United States
| | - Eliovardo Gonzalez-Correa
- Materials
Department, University of California, Santa Barbara, California 93106, United States
- Materials
Research Laboratory, University of California, Santa Barbara, California 93106, United States
| | - Chongmin Wang
- Environmental
Molecular Sciences Laboratory, Pacific Northwest
National Laboratory, Richland, Washington 99352, United States
| | - Craig M. Brown
- Center
for Neutron Research, National Institute
of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Anthony K. Cheetham
- Materials
Department, University of California, Santa Barbara, California 93106, United States
- Department
of Materials Science and Engineering, National
University of Singapore, 9 Engineering Drive 1, 117575, Singapore
- Materials
Research Laboratory, University of California, Santa Barbara, California 93106, United States
| | - Pieremanuele Canepa
- Department
of Materials Science and Engineering, National
University of Singapore, 9 Engineering Drive 1, 117575, Singapore
- Department
of Chemical and Biomolecular Engineering, National University of Singapore, 4 Engineering Drive 4, 117585, Singapore
| | - Raphaële J. Clément
- Materials
Department, University of California, Santa Barbara, California 93106, United States
- Materials
Research Laboratory, University of California, Santa Barbara, California 93106, United States
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Xiao WZ, Xiao G, Wang ZJ, Wang LL. Large exciton binding energy, superior mechanical flexibility, and ultra-low lattice thermal conductivity in BiI 3monolayer. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 34:055302. [PMID: 34706358 DOI: 10.1088/1361-648x/ac33de] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/06/2021] [Accepted: 10/27/2021] [Indexed: 06/13/2023]
Abstract
The exciton binding energy, mechanical properties, and lattice thermal conductivity of monolayer BiI3are investigated on the basis of first principle calculation. The excitation energy of monolayer BiI3is predicted to be 1.02 eV, which is larger than that of bulk BiI3(0.224 eV). This condition is due to the reduced dielectric screening in systems. The monolayer can withstand biaxial tensile strain up to 30% with ideal tensile strength of 2.60 GPa. Compared with graphene and MoS2, BiI3possesses superior flexibility and ductility due to its large Poisson's ratio and smaller Young's modulus by two orders of magnitude. The predicted lattice thermal conductivitykLof monolayer BiI3is 0.247 W m-1 K-1at room temperature, which is lower than most reported values for other 2D materials. Such ultralowkLresults from the scattering between acoustic and optical phonon modes, heavy atomic mass, and relatively weak chemical bond.
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Affiliation(s)
- Wen-Zhi Xiao
- School of Computational Science and Electronics, Hunan Institute of Engineering, Xiangtan 411104, People's Republic of China
| | - Gang Xiao
- School of Computational Science and Electronics, Hunan Institute of Engineering, Xiangtan 411104, People's Republic of China
| | - Zhu-Jun Wang
- School of Computational Science and Electronics, Hunan Institute of Engineering, Xiangtan 411104, People's Republic of China
| | - Ling-Ling Wang
- School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
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