DMRG on Top of Plane-Wave Kohn-Sham Orbitals: A Case Study of Defected Boron Nitride

Tensor Network State Algorithms on AI Accelerators

We introduce novel algorithmic solutions for hybrid CPU-multiGPU tensor network state algorithms utilizing non-Abelian symmetries building on AI-motivated state-of-the-art hardware and software technologies. The presented numerical simulations on the FeMo cofactor, which plays a crucial role in converting atmospheric nitrogen to ammonia, are far beyond the scope of traditional approaches. Our large-scale SU(2) spin adapted density matrix renormalization group calculations up to bond dimension D = 216 on complete active space (CAS) size of 18 electrons in 18 orbitals [CAS(18, 18)] demonstrate that the current limit of exact solution, i.e. full-CI limit, can be achieved in fraction of time. Furthermore, benchmarks up to CAS(113, 76) demonstrate the utilization of NVIDIA's highly specialized AI accelerators via NVIDIA Tensor Cores, leading to performance around 115 TFLOPS on a single node supplied with eight NVIDIA A100 devices. As a consequence of reaching 71% of the full capacity of the hardware, the cubic scaling of computational time with bond dimension can be reduced to a linear form for a broad range of D values; thus, breaking the current computational limits of small CAS spaces in ab initio quantum chemistry and material science is becoming a reality. In comparison to strict U(1) implementations with matching accuracy, our solution has an estimated effective performance of 300-500 TFLOPS, which emphasizes the mutual need for both algorithmic and technological developments to push current frontiers on classical computation.

Coherent dynamics of multi-spin V[Formula: see text] center in hexagonal boron nitride

Hexagonal boron nitride (hBN) has recently been demonstrated to contain optically polarized and detected electron spins that can be utilized for implementing qubits and quantum sensors in nanolayered-devices. Understanding the coherent dynamics of microwave driven spins in hBN is of crucial importance for advancing these emerging new technologies. Here, we demonstrate and study the Rabi oscillation and related phenomena of a negatively charged boron vacancy (V[Formula: see text]) spin ensemble in hBN. We report on different dynamics of the V[Formula: see text] spins at weak and strong magnetic fields. In the former case the defect behaves like a single electron spin system, while in the latter case it behaves like a multi-spin system exhibiting multiple-frequency dynamical oscillation as beat in the Ramsey fringes. We also carry out theoretical simulations for the spin dynamics of V[Formula: see text] and reveal that the nuclear spins can be driven via the strong electron nuclear coupling existing in V[Formula: see text] center, which can be modulated by the magnetic field and microwave field.

Post-Density Matrix Renormalization Group Methods for Describing Dynamic Electron Correlation with Large Active Spaces

The ab initio density matrix renormalization group (DMRG) method has been well-established and has become one of the most accurate numerical methods for the precise electronic structure solution of large active spaces. In the past few years, to capture the missing dynamic correlation, various post-DMRG approaches have been proposed through the combination of DMRG and multireference quantum chemical methods or density functional theory. With this in mind, this work provides a brief overview of ab initio DMRG principles and the new developments within post-DMRG methods. For clarity, post-DMRG methods are classified into two main categories depending on whether high-order n-electron reduced density matrices are used, and their merits and disadvantages are properly discussed. Finally, we conclude by discussing unsolved bottlenecks and giving development perspectives of post-DMRG approaches, which are expected to yield quantitative descriptions of complex electronic structures in large strongly correlated molecules and materials.

Computational design of quantum defects in two-dimensional materials

Missing atoms or atom substitutions (point defects) in crystal lattices in two-dimensional (2D) materials are potential hosts for emerging quantum technologies, such as single-photon emitters and spin quantum bits (qubits). First-principles-guided design of quantum defects in 2D materials is paving the way for rational spin qubit discovery. Here we discuss the frontier of first-principles theory development and the challenges in predicting the critical physical properties of point defects in 2D materials for quantum information technology, in particular for optoelectronic and spin-optotronic properties. Strong many-body interactions at reduced dimensionality require advanced electronic structure methods beyond mean-field theory. The great challenges for developing theoretical methods that are appropriate for strongly correlated defect states, as well as general approaches for predicting spin relaxation and the decoherence time of spin defects, are yet to be addressed.

Defect Polaritons from First Principles

Control over the optical properties of defects in solid-state materials is necessary for their application in quantum technologies. In this study, we demonstrate, from first principles, how to tune these properties via the formation of defect polaritons in an optical cavity. We show that the polaritonic splitting that shifts the absorption energy of the lower polariton is much higher than can be expected from a Jaynes-Cummings interaction. We also find that the absorption intensity of the lower polariton increases by several orders of magnitude, suggesting a possible route toward overcoming phonon-limited single-photon emission from defect centers. These findings are a result of an effective continuum of electronic transitions near the lowest-lying electronic transition that dramatically enhances the strength of the light-matter interaction. We expect our findings to spur experimental investigations of strong light-matter coupling between defect centers and cavity photons for applications in quantum technologies.

Hybridized Defects in Solid-State Materials as Artificial Molecules

Two-dimensional materials can be crafted with structural precision approaching the atomic scale, enabling quantum defects-by-design. These defects are frequently described as "artificial atoms" and are emerging optically addressable spin qubits. However, interactions and coupling of such artificial atoms with each other, in the presence of the lattice, warrants further investigation. Here we present the formation of "artificial molecules" in solids, introducing a chemical degree of freedom in control of quantum optoelectronic materials. Specifically, in monolayer hexagonal boron nitride as our model system, we observe configuration- and distance-dependent dissociation curves and hybridization of defect orbitals within the bandgap into bonding and antibonding orbitals, with splitting energies ranging from ∼10 meV to nearly 1 eV. We calculate the energetics of cis and trans out-of-plane defect pairs CH_B-CH_B against an in-plane defect pair C_B-C_B and find that in-plane defect pair interacts more strongly than out-of-plane pairs. We demonstrate an application of this chemical degree of freedom by varying the distance between C_B and V_N of C_BV_N and observe changes in the predicted peak absorption wavelength from the visible to the near-infrared spectral band. We envision leveraging this chemical degree of freedom of defect complexes to precisely control and tune defect properties toward engineering robust quantum memories and quantum emitters for quantum information science.