Detecting Dissociation Dynamics of Phosphorus Molecular Ions by Atom Probe Tomography

Nanoscale Analysis of Frozen Water by Atom Probe Tomography Using Graphene Encapsulation and Cryo-Workflows

There has been an increasing interest in atom probe tomography (APT) to characterize hydrated and biological materials. A major benefit of APT compared to microscopy techniques more commonly used in biology is its combination of outstanding three-dimensional (3D) spatial resolution and mass sensitivity. APT has already been successfully used to characterize biominerals, revealing key structural information at the atomic scale, however there are many challenges inherent to the analysis of soft hydrated materials. New preparation protocols, often involving specimen preparation and transfer at cryogenic temperature, enable APT analysis of hydrated materials and have the potential to enable 3D atomic scale characterization of biological materials in the near-native hydrated state. In this study, samples of pure water at the tips of tungsten needle specimens were prepared at room temperature by graphene encapsulation. A comparative study was conducted where specimens were transferred at either room temperature or cryo-temperature and analyzed by APT by varying the flight path and pulsing mode. The differences between the analysis workflows are presented along with recommendations for future studies, and the compatibility between graphene coating and cryogenic workflows is demonstrated.

Understanding the Nature of Crystallographic Bonds by Establishing the Correlation between Ion-Pair Chemistry and Their Separation in Detector Space

The occurrence of multi-hit events and the separation distance between multi-hit ion pairs field evaporated from III-nitride semiconductors can potentially provide insights on neighboring chemistry, crystal structure, and field conditions. In this work, we quantify the range of variation in major III-N and III-III ion-pair separation to establish correlations with bulk composition, growth method, and ion-pair chemistry. The analysis of ion-pair separation along the AlGaN/GaN heterostructure system allows for comparison of Ga-N and Ga-Ga ion-pair separation between events evaporated from pure GaN and Al0.3Ga0.7N. From this, we aim to define a relative measure for the bond length of ion pairs within an AlGaN/GaN heterostructure. The distributions of pair separation revealed a distinct bimodal behavior that is unique to Al-N2+ ion pairs, suggesting the occurrence of both co-evaporation and molecular dissociation. Finally, we demonstrated that the two modes of ion-pair events align with the known variation in the surface electric field of the AlGaN(0001) structure. These findings demonstrate the utility of atom probe tomography in studying the crystallographic nature of nitride semiconductors.

Theoretical Insights into Energy Absorption and Charge Draining during Field Evaporation Assisted by Femtosecond Laser Pulses

Manipulation of laser-assisted field evaporation taking place at a sub-picosecond time scale relies on a full understanding of the dynamics at a microscopic level. We use first-principles methods to investigate the mechanism of energy absorption and charge draining during fast evaporation of silicon in a high electrostatic field with ultrafast-laser illumination. The results show that laser energy absorption to trigger field evaporation can be described by an effective cross section, which depends on the photon frequency and the static field strength. The cross section is not affected by pulse duration or laser intensity, indicating that the absorption is first-order. It is found that the charge state of the evaporating ion fluctuates due to the collective excitation of electrons. The average charge state does not depend on laser parameters but only on the static field strength, in agreement with experimental observations. Our work provides theoretical insights into the manipulation of modern atom probe tomography and other ultrafast-laser-induced phenomena in high electric fields.

Behavior of the ε-Ga2O3:Sn Evaporation During Laser-Assisted Atom Probe Tomography

The measurement of the composition of ε-Ga2O3 and the quantification of Sn doping in ε-Ga2O3:Sn by laser-assisted atom probe tomography (APT) may be inaccurate depending on the experimental conditions. Both the role of the laser energy and surface electric field were investigated, and the results clearly indicate that deviations from stoichiometry are observed changing the electric field conditions during APT. The measured atomic fraction of Ga can change from 0.45 at low field to 0.38 at high field, to be compared with the expected 0.4. This was interpreted in terms of preferential evaporation of Ga at high field and deficit of O at low field, which was caused by the formation of neutrals. The quantification of Sn-doping is accurate at low-field conditions, with an overestimation of the detected Sn-metallic fraction at high field. This suggests that Sn has a higher evaporation field compared to Ga. Finally, multiple detection events were in-depth studied, revealing that three dissociation reactions occur during APT: GaO2+ → Ga+ + O+; Ga2O22+ → Ga+ + GaO2+; Ga3O22+ → Ga+ + Ga2O2+. Nevertheless, only 2% of the detected events are related to such dissociation reactions, too small a fraction to fully explain the observed deviation from the stoichiometric composition in ε-Ga2O3.