Fast Charge Diffusion in MAPb(I1–xBrx)3 Films for High-Efficiency Solar Cells Revealed by Ultrafast Time-Resolved Reflectivity

Lattice disorder influences the photocarrier dynamics in lead halide perovskites

Revealing the structural impact of lead halide perovskites on photocarrier dynamics is essential for the associated solar cells but deficient in experimental visualization. In this study, with femtosecond spectroscopy, we for the first time explored the contribution of the disorder of the distorted PbX₆ octahedrons and A-site cations on the carrier behaviours. It was found that photoinduced carriers recombine almost twice slower and diffuse 20% faster in the disordered, β-phased samples than in the ordered, γ-phased ones. Yet within the same phase, with a similar PbX₆ orientation but various A-site mobility, the carrier diffusion and recombination have no apparent difference. Thus we firmly conclude that lattice disorder effectively influences the carrier dynamics and therein the Pb-X sublattice is worth more than A-site cations, which should inspire future lead halide perovskite design and applications.

Carrier Diffusion and Recombination Anisotropy in the MAPbI3 Single Crystal

MAPbI₃, one of the archetypical metal halide perovskites, is an exciting semiconductor for a variety of optoelectronic applications. The photoexcited charge-carrier diffusion and recombination are important metrics in optoelectronic devices. Defects in grain interiors and boundaries of MAPbI₃ films cause significant nonradiative recombination energy losses. Besides defect impact, carrier diffusion and recombination anisotropy introduced by structural and electronic discrepancies related to the crystal orientation are vital topics. Here, large-sized MAPbI₃ single crystals (SCs) were grown, with the (110), (112), (100), and (001) crystal planes simultaneously exposed through the adjusting ratios of PbI₂ to methylammonium iodide (MAI). Such MAPbI₃ SCs exhibit a weak n-type semiconductor character, and the Fermi levels of these planes were slightly different, causing a homophylic p-n junction at crystal ledges. Utilizing MAPbI₃ SCs, the photoexcited carrier diffusion and recombination within the crystal planes and around the crystal ledges were investigated through time-resolved fluorescence microscope. It is revealed that both the (110) and (001) planes were facilitated to be exposed with more MAI in the growth solutions, and the photoluminescence (PL) of these planes manifesting a red-shift, longer carrier lifetime, and diffusion length compared with the (100) and (112) planes. A longer carrier diffusion length promoted photorecycling. However, excessive MAI-assisted grown MAPbI₃ SCs could increase the radiative recombination. In addition, it revealed that the carrier excited within the (001) and (112) planes was inclined to diffuse toward each other and was favorable to be extracted out of the grain boundaries or crystal ledges.

Passivating Detrimental DX Centers in CH3 NH3 PbI3 for Reducing Nonradiative Recombination and Elongating Carrier Lifetime

After a period of rapid, unprecedented development, the growth in the efficiency of perovskite solar cells has recently slowed. Further improvement of cell efficiency will rely on the in-depth understanding and delicate control of defect passivation. Here, the formation mechanism of iodine vacancies (V_I ), a typical deep defect in CH₃ NH₃ PbI₃ (MAPbI₃ ), is elucidated. The structural and electronic behaviors of V_I are like those of a DX center, a kind of detrimental defect formed by large atomic displacement. Aided by the passivation mechanism of DX centers in tetrahedral semiconductors, it is found that the introduction of Br strengthens chemical bonds and prevents large atomic displacements during defect charging. It therefore reduces the defect states and diminishes electron-phonon coupling. Using time-domain density functional theory (DFT) combined with nonadiabatic molecular dynamics, it is found that the carrier lifetime can be enhanced from 3.2 ns in defective MAPbI₃ to 19 ns in CH₃ NH₃ Pb(I_0.96 Br_0.04 )₃ . This work advances our understanding of how a small amount of Br doping improves the carrier dynamics and cell performance of MAPbI₃ . It may also provide a route to enhance the carrier lifetimes and efficiencies of perovskite solar cells by defect passivation.