Deconvoluting Diffuse Reflectance Spectra for Retrieving Nanostructures' Size Details: An Easy and Efficient Approach

Developments in Raman Spectromicroscopy for Strengthening Materials and Natural Science Research: Shaping the Future of Physical Chemistry

Spectroscopic techniques, especially Raman spectroscopy, cover a large subset in the teaching and research domain of physical chemistry. Raman spectroscopy, and other Raman based techniques, establishes itself as a powerful analytical tool with diverse applications across scientific, industrial, and natural science (including biology and pharmacy) fields and helps in the progress of physical chemistry. Recent advancements and future prospects in Raman spectroscopy, focusing on key areas of innovation and potential directions for research and development, have been highlighted here along with some of the challenges that need to be addressed to prepare Raman based techniques for the future. Significant progress has been made in enhancing the sensitivity, spatial resolution, and time resolution of Raman spectroscopy techniques. Raman spectroscopy has applications in all areas of research but especially in biomedical applications, where Raman spectroscopy holds a great promise for noninvasive or minimally invasive diagnosis, tissue imaging, and drug monitoring. Improvements in instrumentation and laser technologies have enabled researchers to achieve higher sensitivity levels, investigate smaller sample areas with improved spatial resolution, and capture dynamic processes with high temporal resolution. These advancements have paved the way for a deeper understanding of molecular structure, chemical composition, and dynamic behavior in various materials and biological systems. It is high time that we consider whether Raman based techniques are ready to be improved based on the strength of the current era of AI/ML and quantum technology.

The dopant (n- and p-type)-, band gap-, size- and stress-dependent field electron emission of silicon nanowires

This study investigates the electron field emission (EFE) of vertical silicon nanowires (Si NWs) fabricated on n-type Si (100) and p-type Si (100) substrates using catalyst-induced etching (CIE). The impact of dopant types (n- and p-types), optical energy gap, crystallite size and stress on EFE parameters has been explored in detail. The surface morphology of grown SiNWs has been characterized by field emission scanning electron microscopy (FESEM), showing vertical, well aligned SiNWs. Optical absorption and Raman spectroscopy confirmed the presence of the quantum confinement (QC) effect. The EFE performance of the grown nanowire arrays has been examined through recorded J-E measurements under the Fowler-Nordheim framework. The Si NWs grown on p-type Si showed a minimum turn-on field and also a higher field enhancement factor. The band-bending diagram also suggests a lower barrier height of p-type Si NWs compared to n-type Si NWs, which plays a key role in enhancing the EFE performance. These investigations suggest that dopant types (n- and p-types), band gap, crystallite size and stress influence the EFE parameters and Si NWs grown on p-type Si (100) substrates are much more favorable for the investigation of EFE properties.

Parallel or interconnected pores’ formation through etchant selective silicon porosification

The effect of the oxidizer present in the etching solution on the surface morphology and microstructure obtained after porosifying a p-type silicon wafer using metal-assisted chemical etching was studied. The morphologies of Si wafers porosified using two different solutions, HF/H2O2 and HF/KMnO4, were compared to establish how either of the oxidizers (H2O2 or KMnO4) should be chosen depending on the desired application. A comparative study revealed that parallel pores with wire-like structures or interconnected pores with cheese-like structures can be obtained when H2O2 or KMnO4 are chosen, respectively. Careful analysis of the SEM images was carried out using ImageJ to establish that the samples prepared using KMnO4 are more porous due to aggressive etching. Additionally, experimental and theoretical Raman spectroscopic studies have been utilized to study the presence of low-dimensional Si nanostructures, which are a few nanometers in size, at the microscopic level in porosified silicon.

Pseudo-Anomalous Size-Dependent Electron-Phonon Interaction in Graded Energy Band: Solving the Fano Paradox

Quantum size effects on interferons (electron-phonon bound states), confined in fractal silicon (Si) nanostructures (NSs), have been studied by using Raman spectromicroscopy. A paradoxical size dependence of Fano parameters, estimated from Raman spectra, has been observed as a consequence of longitudinal variation of nanocrystallite size along the Si wires leading to local variations in the dopants' density which actually starts governing the Fano coupling, thus liberating the interferons to exhibit the typical quantum size effect. These interferons are more dominated by the effective reduction in dopants' density rather than the quantum confinement effect. Detailed experimental and theoretical Raman line shape analyses have been performed to solve the paradox by establishing that the increasing size effect actually is accompanied by receding Fano coupling due to the weakened electronic continuum. The latter has been validated by observing a consequent variation in the Raman signal from dopants which was found to be consistent with the above conclusion.