Systematic First-Principles Configuration-Interaction Calculations of Linear Optical Absorption Spectra in Silicon Hydrides: Si2H2n (n = 1-3)

Far-UV absorption spectra of SiH2 and dibridged Si2H2 isolated in solid argon

We employ electron bombardment during the deposition of an Ar matrix containing a small proportion of SiH4 to generate various silicon hydrides. Subsequently, the irradiation of a matrix sample at 365 nm decomposes SiH2 and dibridged Si2H2 in solid Ar, which we identify through infrared spectroscopy. We further recorded the corresponding ultraviolet absorption spectra at each experimental stage. An intense band observed in the range of 170-203 nm is largely destroyed upon 365-nm photolysis, which is assigned to the C1B2 ← X1A1 transition of SiH2. Moreover, a moderate band observed in the region of 217-236 nm is reduced slightly, which is assigned to the 31B2 ← X1A1 transition of dibridged Si2H2. These assignments are made based on the observed photolytic behavior, and the prediction of the vertical excitation energies with the corresponding oscillator strengths by using time-dependent density functional theory and equation-of-motion coupled cluster theory.

Benchmarking Gaussian Basis Sets in Quantum-Chemical Calculations of Photoabsorption Spectra of Light Atomic Clusters

The choice of Gaussian basis functions for computing the ground-state properties of molecules and clusters, employing wave function-based electron-correlated approaches, is a well-studied subject. However, the same cannot be said when it comes to the excited-state properties of such systems, in general, and optical properties, in particular. The aim of the present study is to understand how the choice of basis functions affects the calculations of linear optical absorption in clusters, qualitatively and quantitatively. For this purpose, we have calculated linear optical absorption spectra of several small charged and neutral clusters, namely, Li₂, Li₃, Li₄, B₂ ⁺, B₃ ⁺, Be₂ ⁺, and Be₃ ⁺, using a variety of Gaussian basis sets. The calculations were performed within the frozen-core approximation, and a rigorous account of electron correlation effects in the valence sector was taken by employing various levels of configuration interaction (CI) approach both for the ground and excited states. Our results on the peak locations in the absorption spectra of Li₃ and Li₄ are in very good agreement with the experiments. Our general recommendation is that for excited-state calculations, it is very important to utilize those basis sets which contain augmented functions. Relatively smaller aug-cc-pVDZ basis sets also yield high-quality results for photoabsorption spectra and are recommended for such calculations if the computational resources are limited.

Formation and IR spectrum of monobridged Si2H4 isolated in solid argon

The infrared (IR) spectrum of monobridged Si₂H₄ (denoted as mbr-Si₂H₄) isolated in solid Ar was recorded, and a set of lines (in the major matrix site) observed at 858.3 cm^-1, 971.5 cm^-1, 999.2 cm^-1, 1572.7 cm^-1, 2017.7 cm^-1, 2150.4 cm^-1, and 2158.4 cm^-1 were characterized. The species was produced by the electron bombardment of an Ar matrix sample containing a small proportion of SiH₄ during matrix deposition. Upon photolysis of the matrix samples using 365 nm and 160 nm light, the content of mbr-Si₂H₄ increased. The band positions, relative intensity ratios, and D-isotopic shift ratios of the observed IR features are generally in good agreement with those predicted by the B3LYP/aug-cc-pVTZ method. In addition, the photochemistry of the observed products was discussed.