Visualization of Charge Migration in Conductive Polymers via Time-Resolved Electrostatic Force Microscopy

Progress and Prospects in Optical Ultrafast Microscopy in the Visible Spectral Region: Transient Absorption and Two-Dimensional Microscopy

Ultrafast optical microscopy, generally employed by incorporating ultrafast laser pulses into microscopes, can provide spatially resolved mechanistic insight into scientific problems ranging from hot carrier dynamics to biological imaging. This Review discusses the progress in different ultrafast microscopy techniques, with a focus on transient absorption and two-dimensional microscopy. We review the underlying principles of these techniques and discuss their respective advantages and applicability to different scientific questions. We also examine in detail how instrument parameters such as sensitivity, laser power, and temporal and spatial resolution must be addressed. Finally, we comment on future developments and emerging opportunities in the field of ultrafast microscopy.

Hidden surface photovoltages revealed by pump probe KPFM

In this work, we use pump-probe Kelvin probe force microscopy (pp-KPFM) in combination with non-contact atomic force microscopy (nc-AFM) under ultrahigh vacuum, to investigate the nature of the light-induced surface potential dynamics in alumina-passivated crystalline silicon, and in an organic bulk heterojunction thin film based on the PTB7-PC₇₁BM tandem. In both cases, we demonstrate that it is possible to identify and separate the contributions of two different kinds of photo-induced charge distributions that give rise to potential shifts with opposite polarities, each characterized by different dynamics. The data acquired on the passivated crystalline silicon are shown to be fully consistent with the band-bending at the silicon-oxide interface, and with electron trapping processes in acceptors states and in the passivation layer. The full sequence of events that follow the electron-hole generation can be observed on the pp-KPFM curves, i.e. the carriers spatial separation and hole accumulation in the space charge area, the electron trapping, the electron-hole recombination, and finally the electron trap-release. Two dimensional dynamical maps of the organic blend photo-response are obtained by recording the pump-probe KPFM curves in data cube mode, and by implementing a specific batch processing protocol. Sample areas displaying an extra positive SPV component characterized by decay time-constants of a few tens of microseconds are thus revealed, and are tentatively attributed to specific interfaces formed between a polymer-enriched skin layer and recessed acceptor aggregates. Decay time constant images of the negative SPV component confirm that the acceptor clusters act as electron-trapping centres. Whatever the photovoltaic technology, our results exemplify how some of the SPV components may remain completely hidden to conventional SPV imaging by KPFM, with possible consequences in terms of photo-response misinterpretation. This work furthermore highlights the need of implementing time-resolved techniques that can provide a quantitative measurement of the time-resolved potential.

In-Materio Reservoir Computing in a Sulfonated Polyaniline Network

A sulfonated polyaniline (SPAN) organic electrochemical network device (OEND) is fabricated using a simple drop-casting method on multiple Au electrodes for use in reservoir computing (RC). The SPAN network has humidity-dependent electrical properties. Under high humidity, the SPAN OEND exhibits mainly ionic conduction, including charging of an electric double layer and ionic diffusion. The nonlinearity and hysteresis of the current-voltage characteristics progressively increase with increasing humidity. The rich dynamic output behavior indicates wide variations for each electrode, which improves the RC performance because of the disordered network. For RC, waveform generation and short-term memory tasks are realized by a linear combination of outputs. The waveform task accuracy and memory capacity calculated from a short-term memory task reach 90% and 33.9, respectively. Improved spoken-digit classification is realized with 60% accuracy by only 12 outputs, demonstrating that the SPAN OEND can manage time series dynamic data operation in RC owing to a combination of rich dynamic and nonlinear electronic properties. The results suggest that SPAN-based electrochemical systems can be applied for material-based computing, by exploiting their intrinsic physicochemical behavior.

Advanced atomic force microscopy-based techniques for nanoscale characterization of switching devices for emerging neuromorphic applications

Neuromorphic systems require integrated structures with high-density memory and selector devices to avoid interference and recognition errors between neighboring memory cells. To improve the performance of a selector device, it is important to understand the characteristics of the switching process. As changes by switching cycle occur at local nanoscale areas, a high-resolution analysis method is needed to investigate this phenomenon. Atomic force microscopy (AFM) is used to analyze the local changes because it offers nanoscale detection with high-resolution capabilities. This review introduces various types of AFM such as conductive AFM (C-AFM), electrostatic force microscopy (EFM), and Kelvin probe force microscopy (KPFM) to study switching behaviors.