Ligand-Induced Luminescence Transformation in AgInS2 Nanoparticles: From Defect Emission to Band-Edge Emission

Surface ligand chemistry on quaternary Ag(In x Ga1-x )S2 semiconductor quantum dots for improving photoluminescence properties

Ternary and quaternary semiconductor quantum dots (QDs) are candidates for cadmium-free alternatives. Among these, semiconductors containing elements from groups 11, 13, and 16 (i.e., I-III-VI₂) are attracting increasing attention since they are direct semiconductors whose bandgap energies in the bulk state are tunable between visible and near infrared. The quaternary system of alloys consisting of silver indium sulfide (AgInS₂; bandgap energy: E _g = 1.8 eV) and silver gallium sulfide (AgGaS₂; E _g = 2.4 eV) (i.e., Ag[In _x Ga_1-x ]S₂ (AIGS)) enables bandgap tuning over a wide range of visible light. However, the photoluminescence (PL) quantum yield (10-20%) of AIGS QDs is significantly lower than that of AgInS₂ (60-70%). The present study investigates how to improve the PL quantum yield of AIGS QDs via surface ligand engineering. Firstly, the use of a mixture of oleic acid and oleylamine, instead of only oleylamine, as the solvent for the QD synthesis was attempted, and a threefold improvement of the PL quantum yield was achieved. Subsequently, a post-synthetic ligand exchange was performed. Although the addition of alkylphosphine, which is known as an L-type ligand, improved the PL efficiency only by 20%, the use of metal halides, which are categorized as Z-type ligands, demonstrated a twofold to threefold improvement of the PL quantum yield, with the highest value reaching 73.4%. The same procedure was applied to the band-edge emitting core/shell-like QDs that were synthesized in one batch based on our previous findings. While the as-prepared core/shell-like QDs exhibited a PL quantum yield of only 9%, the PL quantum yield increased to 49.5% after treatment with metal halides.

Indium(II) Chloride as a Precursor in the Synthesis of Ternary (Ag-In-S) and Quaternary (Ag-In-Zn-S) Nanocrystals

A new indium precursor, namely, indium(II) chloride, was tested as a precursor in the synthesis of ternary Ag-In-S and quaternary Ag-In-Zn-S nanocrystals. This new precursor, being in fact a dimer of Cl2In-InCl2 chemical structure, is significantly more reactive than InCl3, typically used in the preparation of these types of nanocrystals. This was evidenced by carrying out comparative syntheses under the same reaction conditions using these two indium precursors in combination with the same silver (AgNO3) and zinc (zinc stearate) precursors. In particular, the use of indium(II) chloride in combination with low concentrations of the zinc precursor yielded spherical-shaped (D = 3.7-6.2 nm) Ag-In-Zn-S nanocrystals, whereas for higher concentrations of this precursor, rodlike nanoparticles (L = 9-10 nm) were obtained. In all cases, the resulting nanocrystals were enriched in indium (In/Ag = 1.5-10.3). Enhanced indium precursor conversion and formation of anisotropic, longitudinal nanoparticles were closely related to the presence of thiocarboxylic acid type of ligands in the reaction mixture. These ligands were generated in situ and subsequently bound to surfacial In(III) cations in the growing nanocrystals. The use of the new precursor of enhanced reactivity facilitated precise tuning of the photoluminescence color of the resulting nanocrystals in the spectral range from ca. 730 to 530 nm with photoluminescence quantum yield (PLQY) varying from 20 to 40%. The fabricated Ag-In-S and Ag-In-Zn-S nanocrystals exhibited the longest, reported to date, photoluminescence lifetimes of ∼9.4 and ∼1.4 μs, respectively. It was also demonstrated for the first time that ternary (Ag-In-S) and quaternary (Ag-In-Zn-S) nanocrystals could be applied as efficient photocatalysts, active under visible light (green) illumination, in the reaction of aldehydes reduction to alcohols.

Construction of Various One-Dimensional ZnS/MnS Heteronanostructures with Varied Diameters via the Multistep Solution-Solid-Solid Growth Method

A series of novel one-dimensional (1D) ZnS/MnS heteronanostructures were prepared by a multistep solution-solid-solid (SSS) growth method using [(C₄H₉)₂NCS₂]₂Zn and [(C₄H₉)₂NCS₂]₂Mn as the precursors and Ag₂S as the catalyst. The composition of the 1D heteronanostructures could be effectively modulated by varying the addition sequence of the precursors, such as the Ag₂S/MnS/ZnS and Ag₂S/ZnS/MnS heteronanostructures, which were obtained through the successive addition of [(C₄H₉)₂NCS₂]₂Zn and [(C₄H₉)₂NCS₂]₂Mn precursors but in different sequences. Using the same Ag₂S catalysts, the average diameter of the 1D ZnS/MnS heteronanostructures with multisegments of ZnS and MnS is located between that of ZnS nanorod in Ag₂S/ZnS and that of MnS nanorod in Ag₂S/MnS. This phenomenon could arise from the different cationic radii and lattice parameters of ZnS and MnS. The UV-vis absorbance of the 1D ZnS/MnS heteronanostructures could be attributed to the interband transitions of ZnS and MnS. These findings contribute to the rational synthesis of novel 1D semiconductor heteronanostructures with multicomponents and benefit the development of optoelectronic devices.

Non-excitonic defect-assisted radiative transitions are responsible for new D-type blinking in ternary quantum dots

This work addresses the issue of dark states formation in QDs by cooperative excitonic and intrinsic defect-assisted radiative transitions. Here we refer to the observed blinking as D-type to distinguish it from purely excitonic types. It is shown experimentally that defect-assisted radiative relaxations in a single I-III-VI QD result in atypical blinking characteristics that cannot be explained on the basis of charged exciton models. In addition to the excitonic channel, it has been proposed that defect-assisted kinetics can also form blinking patterns. Two conditions for the formation of dark states have been identified which are related to correlation and competition when considering photons emitted from bright defects. Two transition schemes have therefore been proposed. The first transition scheme includes time-correlated trapping of more than one electron at a single trap centre. This is used to simulate variations in the defect's charge state and switching between radiative/nonradiative transitions. The latter scheme, on the other hand, involves uncorrelated trapping and radiative relaxations from two different types of defects (competition). Both schemes are seen to play an equal role in radiative processes in I-III-VI QDs. Considered together, the proposed models can reflect the experimental data with very good accuracy, providing a better understanding of the underlying physics. An important implication of these schemes is that dark states formation doesn't have to be limited to mechanisms that involve charged excitons, and it may also be observed for independent defect assisted kinetics. This is especially valid for highly defected or multinary QDs.