Thermally Induced Formation of HF4TCNQ- in F4TCNQ-Doped Regioregular P3HT

Unlocking high-performance near-infrared photodetection: polaron-assisted organic integer charge transfer hybrids

Room temperature femtowatt sensitivity remains a sought-after attribute, even among commercial inorganic infrared (IR) photodetectors (PDs). While organic IR PDs are poised to emerge as a pivotal sensor technology in the forthcoming Fourth-Generation Industrial Era, their performance lags behind that of their inorganic counterparts. This discrepancy primarily stems from poor external quantum efficiencies (EQE), driven by inadequate exciton dissociation (high exciton binding energy) within organic IR materials, exacerbated by pronounced non-radiative recombination at narrow bandgaps. Here, we unveil a high-performance organic Near-IR (NIR) PD via integer charge transfer between Poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene] (C-14PBTTT) donor (D) and Tetrafluorotetracyanoquinodimethane (TCNQF4) acceptor (A) molecules, showcasing strong low-energy subgap absorptions up to 2.5 µm. We observe that specifically, polaron excitation in these radical and neutral D-A blended molecules enables bound charges to exceed the Coulombic attraction to their counterions, leading to an elevated EQE (polaron absorption region) compared to Frenkel excitons. As a result, our devices achieve a high EQE of ∼107%, femtowatt sensitivity (NEP) of ~0.12 fW Hz-1/2 along a response time of ~81 ms, at room temperature for a wavelength of 1.0 µm. Our innovative utilization of polarons highlights their potential as alternatives to Frenkel excitons in high-performance organic IR PDs.

Development of High Performance Thermoelectric Polymers via Doping or Dedoping Engineering

It is of great significance to develop high-performance thermoelectric (TE) materials, because they can be used to harvest waste heat into electricity and there is abundant waste heat on earth. The conventional TE materials are inorganic semimetals or semiconductors like Bi2Te3 and its derivatives. However, they have problems of high cost, scarce/toxic elements, high thermal conductivity, and poor mechanical flexibility. Organic TE materials emerged as the next-generation TE materials because of their merits including solution processability, low cost, abundant element, low intrinsic thermal conductivity, and high mechanical flexibility. Organic TE materials are mainly conducting polymers because of their high conductivity. Both the conductivity and Seebeck coefficient depend on the doping level, and they are interdependent. Hence, the TE properties of polymers can be improved through doping/dedoping engineering. There are three types of doping forms, oxidative (or reductive) doping, protonic acid doping, and charge transfer doping. Accordingly, they can be dedoped by different approaches. In this article, we review the methods to dope and dedope p-type and n-type TE polymers and the combination of doping and dedoping to optimize their TE properties. Secondary doping is also covered, since it can significantly enhance the conductivity of some TE polymers.

A Universal, Highly Stable Dopant System for Organic Semiconductors Based on Lewis-Paired Dopant Complexes

Chemical doping of organic semiconductors is an essential enabler for applications in electronic and energy-conversion devices such as thermoelectrics. Here, Lewis-paired complexes are advanced as high-performance dopants that address all the principal drawbacks of conventional dopants in terms of limited electrical conductivity, thermal stability, and generality. The study focuses on the Lewis acid B(C6F5)3 (BCF) and 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) bearing Lewis-basic -CN groups. Due to its high electron affinity, BCF:F4TCNQ dopes an exceptionally wide range of organic semiconductors, over 20 of which are investigated. Complex activation and microstructure control lead to conductivities for poly(3-hexylthiophene) (P3HT) exceeding 300 and 900 S cm-1 for isotropic and chain-oriented films, respectively, resulting in a 10 to 50 times larger thermoelectric power factor compared to those obtained with neat dopants. Moreover, BCF:F4TCNQ-doped P3HT exhibits a 3-fold higher thermal dedoping activation energy compared to that obtained with neat dopants and at least a factor of 10 better operational stability.

Assessing molecular doping efficiency in organic semiconductors with reactive Monte Carlo

The addition of molecular dopants into organic semiconductors (OSCs) is a ubiquitous augmentation strategy to enhance the electrical conductivity of OSCs. Although the importance of optimizing OSC-dopant interactions is well-recognized, chemically generalizable structure-function relationships are difficult to extract due to the sensitivity and dependence of doping efficiency on chemistry, processing conditions, and morphology. Computational modeling for an integrated OSC-dopant design is an attractive approach to systematically isolate fundamental relationships, but requires the challenging simultaneous treatment of molecular reactivity and morphology evolution. We present the first computational study to couple molecular reactivity with morphology evolution in a molecularly doped OSC. Reactive Monte Carlo is employed to examine the evolution of OSC-dopant morphologies and doping efficiency with respect to dielectric, the thermodynamic driving for the doping reaction, and dopant aggregation. We observe that for well-mixed systems with experimentally relevant dielectric constants, doping efficiency is near unity with a very weak dependence on the ionization potential and electron affinity of OSC and dopant, respectively. At experimental dielectric constants, reaction-induced aggregation is observed, corresponding to the well-known insolubility of solution-doped materials. Simulations are qualitatively consistent with a number of experimental studies showing a decrease of doping efficiency with increasing dopant concentration. Finally, we observe that the aggregation of dopants lowers doping efficiency and thus presents a rational design strategy for maximizing doping efficiency in molecularly doped OSCs. This work represents an important first step toward the systematic integration of molecular reactivity and morphology evolution into the characterization of multi-scale structure-function relationships in molecularly doped OSCs.

Doping Approaches for Organic Semiconductors

Electronic doping in organic materials has remained an elusive concept for several decades. It drew considerable attention in the early days in the quest for organic materials with high electrical conductivity, paving the way for the pioneering work on pristine organic semiconductors (OSCs) and their eventual use in a plethora of applications. Despite this early trend, however, recent strides in the field of organic electronics have been made hand in hand with the development and use of dopants to the point that are now ubiquitous. Here, we give an overview of all important advances in the area of doping of organic semiconductors and their applications. We first review the relevant literature with particular focus on the physical processes involved, discussing established mechanisms but also newly proposed theories. We then continue with a comprehensive summary of the most widely studied dopants to date, placing particular emphasis on the chemical strategies toward the synthesis of molecules with improved functionality. The processing routes toward doped organic films and the important doping-processing-nanostructure relationships, are also discussed. We conclude the review by highlighting how doping can enhance the operating characteristics of various organic devices.

Tuning Organic Electrochemical Transistor (OECT) Transconductance toward Zero Gate Voltage in the Faradaic Mode

In this work, we investigate material design criteria for low-powered/self-powered and efficient organic electrochemical transistors (OECTs) to be operated in the faradaic mode (detection at the gate electrode occurs via electron transfer events). To rationalize device design principles, we adopt a Marcus-Gerischer perspective for electrochemical processes at both the gate and channel interfaces. This perspective considers density of states (DOS) for the semiconductor channel, the gate electrode, and the electrolyte. We complement our approach with energy band offsets of relevant electrochemical potentials that can be independently measured from transistor geometry using conventional electrochemical methods as well as an approach to measure electrolyte potential in an operating OECT. By systematically changing the relative redox property offsets between the redox-active electrolyte and semiconducting polymer channel, we demonstrate a first-order design principle that necessary gate voltage is minimized by good DOS overlap of the two redox processes at the gate and channel. Specifically, for p-type turn-on OECTs, the voltage-dependent, electrochemically active semiconductor DOS should overlap with the oxidant form of the electrolyte to minimize the onset voltage for transconductance. A special case where the electrolyte can be used to spontaneously dope the polymer via charge transfer is also considered. Collectively, our results provide material design pathways toward the development of simple, robust, power-saving, and high-throughput OECT biosensors.

Coexistent Integer Charge Transfer and Charge Transfer Complex in F4-TCNQ-Doped PTAA for Efficient Flexible Organic Light-Emitting Diodes

Understanding the mechanism of interaction between organic polymers and dopants is of great significance to further enhance the performances of flexible electronics. Here, the two doping mechanisms of charge transfer complex (CTC) and integer charge transfer (ICT) are found to coexist in p-π conjugated PTAA doped with the strong acceptor F4-TCNQ, and their correlation is affected by the HJ-aggregate state of the doped polymer. The growth of the J-aggregate caused by the increase of CTC would lead to a corresponding formation of ICT. The doping efficiency was dominated by the CTC/ICT ratio. On the basis of the analysis of the optical, electrical, and morphological properties of PTAA:F4-TCNQ films, we optimized the CTC/ICT ratio to achieve the efficient hole transport layers that are used in solution-processed flexible phosphorescent organic light-emitting diodes with p-i-n structure. The optimal device presents a very high current efficiency (CE) of 31.12 cd/A and a low turn-on voltage of 3.6 V.