High-Performance Deep Ultraviolet Photodetector Based on a One-Dimensional Lead-Free Halide Perovskite CsCu2I3 Film with High Stability

Recent Advances in Low-Dimensional Nanomaterials for Photodetectors

New emerging low-dimensional such as 0D, 1D, and 2D nanomaterials have attracted tremendous research interests in various fields of state-of-the-art electronics, optoelectronics, and photonic applications due to their unique structural features and associated electronic, mechanical, and optical properties as well as high-throughput fabrication for large-area and low-cost production and integration. Particularly, photodetectors which transform light to electrical signals are one of the key components in modern optical communication and developed imaging technologies for whole application spectrum in the daily lives, including X-rays and ultraviolet biomedical imaging, visible light camera, and infrared night vision and spectroscopy. Today, diverse photodetector technologies are growing in terms of functionality and performance beyond the conventional silicon semiconductor, and low-dimensional nanomaterials have been demonstrated as promising potential platforms. In this review, the current states of progress on the development of these nanomaterials and their applications in the field of photodetectors are summarized. From the elemental combination for material design and lattice structure to the essential investigations of hybrid device architectures, various devices and recent developments including wearable photodetectors and neuromorphic applications are fully introduced. Finally, the future perspectives and challenges of the low-dimensional nanomaterials based photodetectors are also discussed.

Deep-Ultraviolet Transparent Electrode Design for High-Performance and Self-Powered Perovskite Photodetector

In this study, a highly crystalline and transparent indium-tin-oxide (ITO) thin film was prepared on a quartz substrate via RF sputtering to fabricate an efficient bottom-to-top illuminated electrode for an ultraviolet C (UVC) photodetector. Accordingly, the 26.6 nm thick ITO thin film, which was deposited using the sputtering method followed by post-annealing treatment, exhibited good transparency to deep-UV spectra (67% at a wavelength of 254 nm), along with high electrical conductivity (11.3 S/cm). Under 254 nm UVC illumination, the lead-halide-perovskite-based photodetector developed on the prepared ITO electrode in a vertical structure exhibited an excellent on/off ratio of 1.05 × 104, a superb responsivity of 250.98 mA/W, and a high specific detectivity of 4.71 × 1012 Jones without external energy consumption. This study indicates that post-annealed ITO ultrathin films can be used as electrodes that satisfy both the electrical conductivity and deep-UV transparency requirements for high-performance bottom-illuminated optoelectronic devices, particularly for use in UVC photodetectors.

Recent Advances and Opportunities of Eco-Friendly Ternary Copper Halides: A New Superstar in Optoelectronic Applications

Recently, the newly-emerging lead-free metal-halide materials with less toxicity and superior optoelectronic properties have received wide attention as the safer and potentially more robust alternatives to lead-based perovskite counterparts. Among them, ternary copper halides (TCHs) have become a vital group due to their unique features, including abundant structural diversity, ease of synthesis, unprecedented optoelectronic properties, high abundance, and low cost. Although the recent efforts in this field have made certain progresses, some scientific and technological issues still remain unresolved. Herein, a comprehensive and up-to-date overview of recent progress on the fundamental characteristics of TCH materials and their versatile applications is presented, which contains topics such as: i) crystal and electronic structure features and synthesis strategies; ii) mechanisms of self-trapped excitons, luminescence regulation, and environmental stability; and iii) their burgeoning optoelectronic devices of phosphor-converted white light-emitting diodes (WLEDs), electroluminescent LEDs, anti-counterfeiting, X-ray scintillators, photodetectors, sensors, and memristors. Finally, the current challenges together with future perspectives on the development of TCH materials and applications are also critically described, which is considered to be critical for accelerating the commercialization of these rapidly evolving technologies.

Spherulitic Crystallization of CsCu2I3 for High Performance Ultraviolet Photodetectors

Ternary copper halides have become promising materials for UV photodetection due to their stability and eco-friendliness. However, the uncontrollable crystallization induces high-concentration defects in these films, inherently limiting further improvement in device performance. Herein, we reveal the antisolvent-assisted crystallization kinetics mechanism of CsCu2I3 during the film-forming process. The nucleation rate is manipulated by adjusting precursor supersaturation using different antisolvents, resulting in decreased density and preferential orientation of the nuclei within the wet film. Subsequent annealing leads to a homogeneous and low-defect CsCu2I3 film with 40-μm-scale spherulites. A resulting visible-blind ultraviolet photodetector exhibits a responsivity of 8.73 A W-1, a specific detectivity of 5.28 × 1012 jones, and a response speed of 1.12 ms. The unencapsulated photodetector shows negligible degradation of responsivity in ambient air (∼70% humidity) for one month. Moreover, the flexible device with a responsivity of 420.2 mA W-1 and a detectivity of 1.18 × 1012 jones also shows excellent bending stability.

Large-Scale, Uniform-Patterned CsCu2 I3 Films for Flexible Solar-Blind Photodetectors Array with Ultraweak Light Sensing

Cesium copper halide perovskite is one of the promising materials for solar-blind light detection. However, most of the cesium copper halide perovskite-based photodetectors (PDs) are focused on ultraviolet A detection and realized on the rigid substrate in the single device configuration. Here, a flexible solar-blind PDs array (10 × 10 pixels) based on the CsCu₂ I₃ film patterns for ultraweak light sensing and light distribution imaging is reported. Large-scale CsCu₂ I₃ film arrays are synthesized with various shapes and uniform dimensions through a simple vacuum-heating-assisted solution method. Benefiting from excellent air stability and superior resistance to the photodegrading of the CsCu₂ I₃ film, the array device exhibits long-term stable photoswitching behavior for 8 h and ultralow light detection capability to resolve the light intensity of 6.1 nW cm^-2 with a high responsivity of 62 A W^-1 , and the array device can acquire clear images of "G", "X", and "U" showing the input light distribution. Moreover, the flame detection and warning system based on a curved solar-blind PDs array is demonstrated, which can be used for multi-flame monitoring and locating. These results can encourage potential applications of the CsCu₂ I₃ film-based PDs array in the field of optical communication and environment monitoring.

Anisotropic Growth of Centimeter-Size CsCu2 I3 Single Crystals with Ultra-Low Trap Density for Aspect-Ratio-Dependent Photodetectors

Low-dimensional ternary copper iodide metal halide with strong quantum confinement effects has made great progress in optoelectronic fields. However, efficient regulation of anisotropic growth of metal halides single crystal still remains a great challenge. Herein, 2 cm size CsCu₂ I₃ single crystals with tunable aspect ratio and the trap states (n_trap ) as low as 5.38 × 10⁹  cm^-3 are fabricated by optimized anti-solvent vapor-assisted method, in which the growth cycle is shortened by half. Evidenced by real-time observation and the LaMer growth model, the rapid and anisotropic growth mechanism is ascribed to preferential 1D growth, promoted by high concentration and fast vapor rate. Furthermore, the aspect-ratio-dependent optoelectronic performance is observed, the on-off ratio for 2 cm CsCu₂ I₃ single crystal are enhanced 350 times compared with those of short and thick single crystal, which shows ultrahigh on-off ratio of 1570, D* of 1.34 × 10¹²  Jones, R_λ of 276.94 mA W^-1 , t _rise /t _decay of 0.37 and 1.08 ms, and EQE of 95.53%, which are clearly at very high level among lead-free perovskite-based photodetectors. This study not only provides a new strategy for overcoming anisotropic growth limitations of low-dimensional metal halides, but also paves a way for high-performance optoelectronic applications.

Scale-up synthesis of high-quality solid-state-processed CsCuX (X = Cl, Br, I) perovskite nanocrystal materials toward near-ultraviolet flexible electronic properties

High-quality CsCu₂X₃ and Cs₃Cu₂X₅ (X = Cl, Br, I) nanocrystals (NCs) exhibit excellent optoelectronic, physical, and chemical properties for detection of UV radiation due to large carrier mobility and lifetime, and heavy atoms. The nanocrystal materials can be prepared via a low-cost and simple solid-state synthesis. However, poor reproducibility and complex synthesis methods of obtaining perovskite NC thin films represent a drawback for the fabrication of the commercial photoelectric device. To address these issues, we develop highly stable CsCu₂X₃ and Cs₃Cu₂X₅ NC materials using a facile solid-state reaction method for the scale-up production of halogen lead-free perovskites. We suggest a distinctive way to design a series of nanocrystalline perovskites using short-term synthesis and study the mechanism of perovskite formation using thermal solid-state synthesis. These all-inorganic and lead-free CsCu₂X₃ and Cs₃Cu₂X₅ exhibit large photoluminescence quantum yields (PLQYs) up to 95.2%. Moreover, flexible paper photodetectors based on this series of lead-free perovskites show strong photoselectivity and bending stability at 254 nm, 365 nm, and 405 nm wavelengths. High-quality responses with a responsivity of 1.1 × 10^-3 A W^-1 and detectivity of 2.71 × 10⁹ jones under UV illumination (10 μW cm^-2) at a bias voltage of 5 mV are demonstrated. These results open prospects for designing photodetectors, LEDs, and other photosensitive devices.

Ultraviolet photodetector based on RbCu2I3microwire

Copper-based halide perovskites have shown great potential in lighting and photodetection due to their excellent photoelectric properties, good stability and lead-free nature. However, as an important piece of copper-based perovskites, the synthesis and application of RbCu₂I₃have never been reported. Here, we demonstrate the synthesis of high-quality RbCu₂I₃microwires (MWs) by a fast-cooling hot saturated solution method. The prepared MWs exhibit an orthorhombic structure with a smooth surface. Optical measurements show the RbCu₂I₃MWs have a sharp ultraviolet absorption edge with 3.63 eV optical band gap and ultra-large stokes shift (300 nm) in photoluminescence. The subsequent photodetector based on a single RbCu₂I₃MW shows excellent ultraviolet detection performance. Under the 340 nm illumination, the device shows a specific detectivity of 5.0 × 10⁹Jones and a responsivity of 380 mA·W^-1. The synthesis method and physical properties of RbCu₂I₃could be a guide to the future optoelectronic application of the new material.

Copper-based metal halides for X-ray and photodetection

Copper-based metal halides have become important materials in the field of X-ray and photodetection due to their excellent optical properties, good environmental stability and low toxicity. This review presents the progress of research on crystal structure/morphology, photophysics/optical properties and applications of copper-based metal halides. We also discuss the challenges of copper-based metal halides with a perspective of their future research directions.

Enhanced Optoelectronic Performance Induced by Ion Migration in Lead-Free CsCu2I3 Single-Crystal Microrods

Lead-free perovskite has attracted great attention in realizing high-performance optoelectronic devices due to their excellent atmospheric stability and nontoxic characteristics. Although a pronounced ion migration effect has been observed in this new class of materials, its potential in enhancing the overall device performance is yet to be fully explored. In this work, we studied the effect of ion migrations on the carrier transport behavior and found that the recoverable migration process can contribute to enhancing the on/off ratio in a lead-free CsCu2I3 single-crystal microrod-based photodetector. In detail, we synthesized CsCu2I3 single-crystal microrods via an in-plane self-assembly supersaturated crystallization approach. These microrods with well-defined morphologies were then used to construct ultraviolet (UV)-band photodetectors, which outperform most reported lead-free perovskite photodetectors based on individual single crystals. Simultaneously, ion migration can result in asymmetric band bending in the two-terminal device, as confirmed by surface potential profiling with Kelvin probe force microscopy (KPFM). Such an effect can be harnessed to increase the on/off ratio by almost an order of magnitude. Furthermore, the lead-free CsCu2I3 single crystal exhibits excellent thermal and air stabilities. These findings demonstrate that the CsCu2I3 single-crystal microrods can be used in stable and efficient photodetection, and the ion migration effect can potentially be utilized for improving the optoelectronic performance of lead-free devices.

Inorganic Copper-Based Halide Perovskite for Efficient Photocatalytic CO2 Reduction

In view of the toxicity of the Pb element, exploring eco-friendly Pb-free halide perovskites with excellent photoelectric properties is of great research and practical application significance. Herein, copper-based halide perovskite CsCuCl₃ and the corresponding Br^--substituted sample (CsCuCl₂Br) are designed and explored as the catalysts for photocatalytic CO₂ reduction for the first time. A facile antisolvent recrystallization process with pre-prepared single crystals as the precursor is employed to controllably synthesize CsCuCl₃ and CsCuCl₂Br microcrystals (MCs). The electronic structure and charge transfer property analysis by theoretical and experimental investigation reveal that CsCuCl₃ possesses a satisfying bandgap (1.92 eV) and conduction band minimum (CBM) to harvest the sunlight and drive the conversion of CO₂ to CH₄ and CO. The Br^- substitution can not only narrow the bandgap but also facilitate the transportation of charge carriers. Thus, a total electron consumption rate of 44.71 μmol g^-1 h^-1 is achieved for CsCuCl₂Br MCs, which is much better than that of same-sized CsPbBr₃ microcrystals or even better than many perovskite nanocrystal photocatalysts. This study suggests that Cu-based perovskites can serve as promising candidates for artificial photosynthesis or other photocatalytic applications, which may propose a new thought to construct lead-free, low-cost photocatalysts.

Near-UV Phototransistors Based on an All-Inorganic Lead-Free Cs3Cu2I5/CuTCNQ Hierarchical Heterostructure

With the rapid advances in metal halide perovskite optoelectronics, eliminating toxic lead from perovskites has been an urgent demand. However, state-of-the-art lead-free perovskite photodetectors are still challenged with issues of low photoresponse, poor stability, etc. Here, all-inorganic lead-free perovskite (Cs₃Cu₂I₅) single crystals that possess good stability under air exposure are synthesized via a facile solid reaction method. Meanwhile, a higher photoluminescence quantum yield of 95.2% and a prolonged carrier lifetime of 1.127 μs are obtained by further optimizing the synthesis. Benefiting from the polyporous surface and hollow structure of Cu-7,7,8,8-tetracyanoquinodimethane (CuTCNQ) microtubes, more Cs₃Cu₂I₅ nanocrystals can adhere on the innershell and outershell of CuTCNQ-15 microtubes. This unique structure contributes to the improved efficiency of utilizing incident light and promotes charge carrier generation and transportation. As a result, the hierarchical CuTCNQ/Cs₃Cu₂I₅ (hollow microtube/nanocrystal) heterostructure phototransistor exhibits a high responsivity of 88.36 A W^-1 and a large detectivity of 1.66 × 10¹² Jones. The proposed lead-free perovskites and mixed-dimensional heterojunctions are promising for sensitive light detection.

Cs4CuSb2Cl12-xIx(x = 0-10) nanocrystals for visible light photodetection

Lead-free layered double perovskite nanocrystals (NCs) with tunable visible range emission, high carrier mobility and low trap density are the need of the hour to make them applicable for optoelectronic and photovoltaic devices. Introduction of Cu²⁺in the high band gap Cs₃Sb₂Cl₉lattice transforms it to the monoclinic Cs₄CuSb₂Cl₁₂(CCSC) NCs having a direct band gap of 1.96 eV. The replacement of 50% Cl^-by I^-ions generates <5 nm Cs₄CuSb₂Cl₆I₆(C6I6) monodispersed NCs with an unchanged crystal system but with further lowering of the band gap to 1.92 eV. Thep-type C6I6 NCs exhibit emission spectra, lower trap density, appreciable hole mobility and most importantly a lower exciton binding energy of only 50.8 ± 1.3 meV. The temperature dependent photoluminescence (PL) spectra of the C6I6 NCs show a decrease in non-radiative recombination from 300 K down to 78 K. When applied as the photoactive layer in out-of-plane photodetector devices, C6I6 NC devices exhibit an appreciable responsivity of 0.67 A W^-1at 5 V, detectivity of 4.55 × 10⁸Jones (2.5 V), and fast photoresponse with rise and fall time of 126 and 94 ms, respectively. On the other hand, higher I^-substitution in Cs₄CuSb₂Cl₂I₁₀NCs (C2I10) degrades the lattice into a mixture of monoclinic and trigonal crystal phases, which also lowers the device performance.

Orientation Regulation of One-Dimensional CsCu2I3 Perovskites for Visible-Blind Ultraviolet Photodetectors

Ternary copper halides with a formula of CsCu₂X₃ (X = Cl, Br, I) have been considered as prospective materials for ultraviolet (UV) photodetectors, due to their suitable band gaps, environmental stability, eco-friendliness, and low cost. However, the crystal orientation of one-dimensional (1D) CsCu₂X₃ perovskites significantly affects the exciton/carrier transport in the films and thus the photodetector performance. Here, we tune the crystal orientation and exciton/charge transport of 1D CsCu₂I₃ perovskite films by using antisolvents during the film formation process. Compared to the randomly oriented film treated by ethyl acetate, the CsCu₂I₃ film using toluene as antisolvent exhibits preferential (221)-oriented growth, which induces enhanced vertical exciton diffusion/charge transport and suppressed nonradiative recombination. On the basis of this strategy, we demonstrate a self-powered, stable, and visible-blind UV photodetector with significantly enhanced response speed and detectivity. Our work clarifies that tuning the crystal orientation of 1D CsCu₂X₃ perovskites is the key to achieve efficient exciton diffusion/charge transport and thus high-performance lead-free perovskite optoelectronic devices.

Sensitive Silicon Nanowire Ultraviolet B Photodetector Induced by Leakage Mode Resonances

Ultraviolet photodetectors (UVPDs) have played an important role both in civil and military applications. While various studies have shown that traditional UVPDs based on wide-band-gap semiconductors (WBSs) have excellent device performances, it is, however, undeniable that the practical application of WBS-based UVPDs is largely limited by the relatively high fabrication cost. In this work, we propose a new silicon nanowire (Si NW) UVPD that is very sensitive to UVB light illumination. The Si NWs with a diameter of about 36 nm are fabricated by a metal-assisted chemical etching method. Performance analysis revealed that the Si NW device was only sensitive to UVB light and almost blind to illumination in the visible and near-infrared regions. Such abnormal spectral selectivity was associated with the leakage mode resonances (LMRs) of the small diameter, according to our theoretical simulation. Under 300 nm illumination, the responsivity, external quantum efficiency, and specific detectivity were estimated to be 10.2 AW^-1, 4.22 × 10³%, and 2.14 × 10¹⁰ Jones, respectively, which were comparable to or even higher than those of some WBS-based UVPDs. These results illustrate that the small dimension Si NWs are potential building blocks for low-cost and high-performance UVPDs in the future.

A high-performance polarization-sensitive and stable self-powered UV photodetector based on a dendritic crystal lead-free metal-halide CsCu2I3/GaN heterostructure

Polarization-sensitive photodetectors are the core of optics applications and have been successfully demonstrated in photodetectors based on the newly-emerging metal-halide perovskites. However, achieving high polarization sensitivity is still extremely challenging. In addition, most of the previously reported photodetectors were concentrated on 1D lead-halide perovskites and 2D asymmetric intrinsic structure materials, but suffered from being external bias driven, lead-toxicity, poor stability and complex processes, severely limiting their practical applications. Here, we demonstrate a high-performance polarization-sensitive and stable polarization-sensitive UV photodetector based on a dendritic crystal lead-free metal-halide CsCu₂I₃/GaN heterostructure. By combining the anisotropic morphology and asymmetric intrinsic structure of CsCu₂I₃ dendrites with the isotropic material GaN film, a high specific surface area and built-in electric field are achieved, exhibiting an ultra-high polarization selectivity up to 28.7 and 102.8 under self-driving mode and -3 V bias, respectively. To our knowledge, such a high polarization selectivity has exceeded those of all of the reported perovskite-based devices, and is comparable to, or even superior to, those of the conventional 2D heterostructure materials. Interestingly, the unsealed device shows outstanding stability, and can be stored for over 2 months, and effectively maintained the performance even after repeated heating (373K)-cooling (300K) for different periods of time in ambient air, indicating a remarkable temperature tolerance and desired compatibility for applications under harsh conditions. Such excellent performance and simple method strongly show that the CsCu₂I₃/GaN heterojunction photodetector has great potential in practical applications with high polarization-sensitivity. This work provides a new insight into designing novel high-performance polarization-sensitive optoelectronic devices.

Effects of Electron-Phonon Coupling and Spin-Spin Coupling on the Photoluminescence of Low-Dimensional Metal Halides

Low-dimensional metal halides (LDMHs), as a derivative of three-dimensional lead halide perovskites, have attracted much attention because of their unique crystal structures and fascinating photonic properties. The simple synthesis and rich photonic properties of LDMHs make them striking candidates for the development of lighting, photodetectors, biological imaging, etc. Although many novel LDMHs have been achieved with strong electron-phonon coupling related to their self-trapped excitons (STEs) and excellent optical responses, transition-metal halides or doped halides have not been covered in regard to their rich spin characteristics. In this Perspective, we aim to deeply understand the role of electron-phonon coupling and STEs with magnetic coupling effects in regulating the optical properties of LDMHs and try to provide a novel way or a series of novel systems for the realization of next-generation high-performance luminescent materials with spin-coupling-involved photonics. Finally, an outlook toward potential challenges and applications of such ionic semiconducting LDMHs is also presented.

Highly efficient copper halide scintillators for high-performance and dynamic X-ray imaging

Progress towards high performance X-ray detection and dynamic imaging applications, including nondestructive inspection, homeland security, and medical diagnostics, requires scintillators with a high light yield, a reasonable decay time, low cost, and eco-friendliness. Recently, copper halide scintillators have drawn tremendous attention due to their outstanding radioluminescence performance. Here, we first employed β-Cs₃Cu₂Cl₅ as a high-performance scintillator, with a photoluminescence quantum yield (PLQY) of 94.6%, a radioluminescence light yield of 34 000 ± 4000 photons per MeV, a low detection limit of 81.7 nGy_air s^-1, and good operational stability under a total X-ray dose of 174.6 Gy_air in air. In addition, this scintillator presents a high spatial resolution of 9.6 lp mm^-1 at the modulation transfer function of 0.2 and a superb performance at 60 frames per second in our X-ray imaging system. Overall, this highly efficient scintillator demonstrates outstanding comprehensive performance and shows great potential for broad applications in X-ray detection and dynamic imaging.

Self-trapped exciton emission in inorganic copper(I) metal halides

The broad emission and high photoluminescence quantum yield of self-trapped exciton (STE) radiative recombination emitters make them an ideal solution for single-substrate, white, solid-state lighting sources. Unlike impurities and defects in semiconductors, the formation of STEs requires a lattice distortion, along with strong electron-phonon coupling, in low electron-dimensional materials. The photoluminescence of inorganic copper(I) metal halides with low electron-dimensionality has been found to be the result of STEs. These materials were of significant interest because of their lead-free, all-inorganic structures, and high luminous efficiencies. In this paper, we summarize the luminescence characteristics of zero- and one-dimensional inorganic copper(I) metal halides with STEs to provide an overview of future research opportunities.

Three-Dimensional Cuprous Iodide Framework with Intrinsic Broadband Red-to-Near-Infrared Light Emission

Herein, a new organic-inorganic hybrid cuprous iodide of [(Me)₂-DABCO]Cu₆I₈ was prepared and structurally characterized with a novel three-dimensional (3D) [Cu₆I₈]^2- framework. Significantly, this 3D cuprous iodide displays infrequent broadband red-to-near-infrared light emission (600-1000 nm) stemming from the radiative recombination of self-trapped excitons.

Interfacial Gradient-Energy-Band-Alignment Modulation via a Vapor-Phase Anion-Exchange Reaction toward Lead-Free Perovskite Photodetectors with Excellent UV Imaging Capability

Bi-based inorganic perovskites have attracted great attention in optoelectronics, as they feature similar photoelectric properties but have high stability and lead-free merits. Unfortunately, due to the high exciton binding energy and small Bohr radius, their photodetection performance still largely lags behind that of Pb-based counterparts. Herein, using a vapor-phase chloride ion-substitution strategy, Cs3Bi2Br9 photodetectors (PDs) with gradient energy band alignment were delicately modulated, contributing to a high carrier separation/collection efficiency. The optimized Bi-based perovskite ACCT (Al2O3/Cs3Bi2Br9/Cs3Bi2ClxBr9-x/TiO2) PDs exhibit outstanding performance, the ON/OFF ratio and linear dynamic range (LDR) are significantly improved by 20 and 2.6 times, respectively. Significantly, we further demonstrate the high-SNR (signal-to-noise ratio) UV imaging based on the optimized device, which shows 21.887 dB higher than that of the pristine device. Finally, the vapor-phase anion-exchange modified perovskite PDs show long-term stability and high UV resistance. Vapor-phase ion-substitution is a promising approach for the synergistic effect of matched energy band alignment and interface passivation, which can be applied to other perovskite-based optoelectronic devices.

Highly Stable Thin Films Based on Novel Hybrid 1D (PRSH)PbX3 Pseudo-Perovskites

In this study, the structure and morphology, as well as time, ultraviolet radiation, and humidity stability of thin films based on newly developed 1D (PRSH)PbX₃ (X = Br, I) pseudo-perovskite materials, containing 1D chains of face-sharing haloplumbate octahedra, are investigated. All films are strongly crystalline already at room temperature, and annealing does not promote further crystallization or film reorganization. The film microstructure is found to be strongly influenced by the anion type and, to a lesser extent, by the DMF/DMSO solvent volume ratio used during film deposition by spin-coating. Comparison of specular X-ray diffraction and complementary grazing incidence X-ray diffraction analysis indicates that the use of DMF/DMSO mixed solvents promotes the strengthening of a dominant 100 or 210 texturing, as compared the case of pure DMF, and that the haloplumbate chains always lie in a plane parallel to the substrate. Under specific DMF/DMSO solvent volume ratios, the prepared films are found to be highly stable in time (up to seven months under fluxing N₂ and in the dark) and to highly moist conditions (up to 25 days at 78% relative humidity). Furthermore, for representative (PRSH)PbX₃ films, resistance against ultraviolet exposure (λ = 380 nm) is investigated, showing complete stability after irradiation for up to 15 h at a power density of 600 mW/cm². These results make such thin films interesting for highly stable perovskite-based (opto)electronic devices.

Broadening the Spectral Response of Perovskite Photodetector to the Solar-Blind Ultraviolet Region through Phosphor Encapsulation

Hybrid perovskite photodetectors generally exhibit brilliant performance for photodetecting in the visible spectrum but poor detectability in the solar-blind ultraviolet (UV) region. To break through the bottleneck, we demonstrate a novel strategy to broaden the spectral response of perovskite photodetectors to the solar-blind UV region through phosphor encapsulation. The high photoluminescence quantum yield trichromatic phosphor capping layer achieves an extended spectral response to the solar-blind UV region through effectively down-converting the incident UV light into visible light. In addition, an external quantum efficiency of up to 12.13%@265 nm is achieved without bias voltage, while the initial value is near zero. The corresponding spectral responsivity and detectivity are 0.0269 A/W and 7.52 × 10¹¹ Jones, respectively. Thus, the photodetectors show a high photocurrent and on/off ratio, increasing by roughly 2 orders of magnitude. Moreover, the photodetectors exhibit a large linear dynamic range of 105 dB, fast response times of 50.16/51.99 μs, and excellent stability. The practical applications for flame detection and UV-based communication are further explored. This work provides a new way to achieve UV light detection based on perovskite photodetectors. Perhaps, it may also be a promising alternative for wide-band gap semiconductors to realize the urgent pursuit of UV detection.

Recent advances toward environment-friendly photodetectors based on lead-free metal halide perovskites and perovskite derivatives

Recently, metal-halide perovskites have emerged as promising materials for photodetector (PD) applications owing to their superior optoelectronic properties, such as ambipolar charge transport characteristics, high carrier mobility, and so on. In the past few years, rapid progress in lead-based perovskite PDs has been witnessed. However, the critical environmental instability and lead-toxicity seriously hinder their further applications and commercialization. Therefore, searching for environmentally stable and lead-free halide perovskites (LFHPs) to address the above hurdles is certainly a worthwhile subject. In this review, we present a comprehensive overview of currently explored LFHPs with an emphasis on their crystal structures, optoelectronic properties, synthesis and modification methods, as well as the PD applications. LFHPs are classified into four categories according to the replacement strategies of Pb²⁺, including AB(ii)X₃, A₃B(iii)₂X₉, A₂B(i)B(iii)'X₆, and newly-emerging perovskite derivatives. Then, we give a demonstration of the preliminary achievements and limitations in environment-friendly PDs based on such LFHPs and perovskite derivatives, and also discuss their applications in biological synapses, imaging, and X-ray detection. With the perspective of their properties and current challenges, we provide an outlook for future directions in this rapidly evolving field to achieve high-quality LFHPs and perovskite derivatives for a broader range of fundamental research and practical applications.

Environment-Induced Reversible Modulation of Optical and Electronic Properties of Lead Halide Perovskites and Possible Applications to Sensor Development: A Review

Lead halide perovskites are currently widely investigated as active materials in photonic and optoelectronic devices. While the lack of long term stability actually limits their application to commercial devices, several experiments demonstrated that beyond the irreversible variation of the material properties due to degradation, several possibilities exist to reversibly modulate the perovskite characteristics by acting on the environmental conditions. These results clear the way to possible applications of lead halide perovskites to resistive and optical sensors. In this review we will describe the current state of the art of the comprehension of the environmental effects on the optical and electronic properties of lead halide perovskites, and of the exploitation of these results for the development of perovskite-based sensors.