Structural Characterization of a Novel Two-Dimensional Material: Cobalt Sulfide Sheets on Au(111)

Hydrodesulfurization of methanethiol over Co-promoted MoS2 model catalysts

The process of hydrodesulfurization is one of the most important heterogeneous catalytic reactions in industry as it helps with reducing global SOx emissions by selectively removing the sulfur contaminants from commercial fuel. In this work, we successfully combine high-pressure scanning tunneling microscopy and reaction modeling using density functional theory to observe the hydrodesulfurization of methanethiol (CH3SH) on the Co-substituted S edges of a Co-promoted MoS2 model catalyst in situ at near-industrial conditions and investigate the plausible reaction pathways. The active sites on the Co-substituted S edges show a time-varying atomic structure influenced by the hydrodesulfurization reaction rate. The involvement of the edge Co site allows for the C-S bond scission to occur at appreciable rates, and is the critical step in the hydrodesulfurization of CH3SH. The atomic structures of the S-edge active sites from our reaction models match excellently with those observed in situ in the experiments.

Controlled synthesis of van der Waals CoS2for improved p-type transistor contact

Two-dimensional (2D) van der Waals (vdW) p-type semiconductors have shown attractive application prospects as atomically thin channels in electronic devices. However, the high Schottky hole barrier of p-type semiconductor-metal contacts induced by Fermi-level pinning is hardly removed. Herein, we prepare a vdW 1T-CoS2nanosheet as the contact electrode of a WSe2field-effect transistor (FET), which shows a considerably high on/off ratio > 107and a hole mobility of ∼114.5 cm2V-1s-1. The CoS2nanosheets exhibit metallic conductivity with thickness dependence, which surpasses most 2D transition metal dichalcogenide metals or semimetals. The excellent FET performance of the CoS2-contacted WSe2FET device can be attributed to the high work function of CoS2, which lowers the Schottky hole barrier. Our work provides an effective method for growing vdW CoS2and opens up more possibilities for the application of 2D p-type semiconductors in electronic devices.

Superstructures, Commensurations, and Rotation of Single-Layer TaS2 on Au(111) Induced by Cs Intercalation/Deintercalation

We use in situ synchrotron grazing incidence X-ray diffraction and X-ray reflectivity to investigate with high resolution the structure of a two-dimensional single layer of tantalum sulfide grown on a Au(111) surface and its evolution during intercalation by Cs atoms and deintercalation, which decouples and recouples the two materials, respectively. The grown single layer consists of a mixture of TaS₂ and its S-depleted version, TaS, both aligned with gold, and forming moirés where 7 (respectively 13) lattice constants of the 2D layer almost perfectly match 8 (respectively 15) substrate lattice constants. Intercalation fully decouples the system by lifting the single layer by ∼370 pm and induces an increase of its lattice parameter by 1-2 picometers. The system gradually evolves, during cycles of intercalation/deintercalation assisted by an H₂S atmosphere, toward a final coupled state consisting of the fully stoichiometric TaS₂ dichalcogenide whose moiré is found very close to the 7/8 commensurability. The reactive H₂S atmosphere appears necessary to achieve full deintercalation, presumably by preventing S depletion and the concomitant strong bonding with the intercalant. The structural quality of the layer improves during the cyclic treatment. In parallel, because they are decoupled from the substrate by the intercalation of cesium, some of the TaS₂ flakes rotate by 30°. These produce two additional superlattices with characteristic diffraction patterns of different origins. The first is aligned with gold's high symmetry crystallographic directions and is a commensurate moiré ((6 × 6)-Au(111) coinciding with (3√3 × 3√3)R30°-TaS₂). The second is incommensurate and corresponds to a near coincidence of (6 × 6) unit cells of 30°-rotated TaS₂ with (4√3 × 4√3)Au(111) surface ones. This structure, which is less coupled to gold, might be related to the ∼(3× 3) charge density wave previously reported even at room temperature in TaS₂ grown on noninteracting substrates. A (3 × 3) superstructure of 30°-rotated TaS₂ islands is indeed revealed by complementary scanning tunneling microscopy.

Simultaneous sulfidation of Mo and Co oxides supported on Au(111)

Here we present the results of a study carried out to investigate the simultaneous sulfidation of Co and Mo oxide nanoparticles on Au(111) as a synthesis strategy to prepare a model catalyst for hydrodesulfurization (HDS). We make use of scanning tunneling microscopy and X-ray photoelectron spectroscopy to track the changes in morphology and chemistry during the synthesis of a mixed Mo and Co oxide precursor and the sulfidation thereafter, to the respective sulfides. We investigated the effects of temperature and the duration of sulfidation on the completeness of the sulfidation process. Our study shows that the formation of MoS₂ with the CoMoS edge (the desired model catalyst) is not affected by the time or the temperature of sulfidation. However, the yield of the Co-promoted MoS₂ slabs is limited by the formation of large clusters due to the spreading of Mo and Co oxide phases upon sulfidation. Complete sulfidation of the mixed oxide precursor to Co-promoted MoS₂ can be accelerated by increasing the sulfidation temperature to 730 K due to the thermally activated nature of Mo oxide sulfidation. Thus, we demonstrate that using a mixed Mo and Co oxide precursor as a starting point for the Co-promoted MoS₂ phase for fundamental catalytic studies is a viable strategy.