Interplay of Fermi Level Pinning, Marcus Inverted Transport, and Orbital Gating in Molecular Tunneling Junctions

Marcus Theory and Long-Range Activationless Transport in Molecular Junctions

Intrachain transport in molecular junctions (MJs) longer than 5 nm has been modeled within the theoretical framework of Marcus theory. We show that in oligo(bisthienylbenzene)-based MJs, electronic transport involves polarons, localized on three monomers that are close to 4 nm in length. They hop and tunnel between adjacent localized sites with reorganization energies λ close to 400-600 meV and electronic coupling parameters Hab close to λ/2. As a consequence, the activation energy for intrachain transport, given by the equation ΔG* = (λ/4)(1 - 2Hab/λ)2, is close to zero, and transport along the chain is activationless, in agreement with experimental observation. On the contrary, similar calculations on conjugated oligonaphthalenefluoreneimine wires show that Hab is much less than λ/2 and predict that the activation energies for intrachain hopping between adjacent sites, close to λ/4, are ∼115 meV. This work proposes a new perspective for understanding long-range activationless transport in MJs beyond the tunneling regime.

Self-Assembled Monolayers for Interfacial Engineering in Solution-Processed Thin-Film Electronic Devices: Design, Fabrication, and Applications

Interfacial engineering has long been a vital means of improving thin-film device performance, especially for organic electronics, perovskites, and hybrid devices. It greatly facilitates the fabrication and performance of solution-processed thin-film devices, including organic field effect transistors (OFETs), organic solar cells (OSCs), perovskite solar cells (PVSCs), and organic light-emitting diodes (OLEDs). However, due to the limitation of traditional interfacial materials, further progress of these thin-film devices is hampered particularly in terms of stability, flexibility, and sensitivity. The deadlock has gradually been broken through the development of self-assembled monolayers (SAMs), which possess distinct benefits in transparency, diversity, stability, sensitivity, selectivity, and surface passivation ability. In this review, we first showed the evolution of SAMs, elucidating their working mechanisms and structure-property relationships by assessing a wide range of SAM materials reported to date. A comprehensive comparison of various SAM growth, fabrication, and characterization methods was presented to help readers interested in applying SAM to their works. Moreover, the recent progress of the SAM design and applications in mainstream thin-film electronic devices, including OFETs, OSCs, PVSCs and OLEDs, was summarized. Finally, an outlook and prospects section summarizes the major challenges for the further development of SAMs used in thin-film devices.

Monolayer Organic Crystals for Ultrahigh Performance Molecular Diodes

Molecular diodes are of considerable interest for the increasing technical demands of device miniaturization. However, the molecular diode performance remains contact-limited, which represents a major challenge for the advancement of rectification ratio and conductance. Here, it is demonstrated that high-quality ultrathin organic semiconductors can be grown on several classes of metal substrates via solution-shearing epitaxy, with a well-controlled number of layers and monolayer single crystal over 1 mm. The crystals are atomically smooth and pinhole-free, providing a native interface for high-performance monolayer molecular diodes. As a result, the monolayer molecular diodes show record-high rectification ratio up to 5 × 108 , ideality factor close to unity, aggressive unit conductance over 103 S cm-2 , ultrahigh breakdown electric field, excellent electrical stability, and well-defined contact interface. Large-area monolayer molecular diode arrays with 100% yield and excellent uniformity in the diode metrics are further fabricated. These results suggest that monolayer molecular crystals have great potential to build reliable, high-performance molecular diodes and deeply understand their intrinsic electronic behavior.

Nanoscale molecular rectifiers

The use of molecules bridged between two electrodes as a stable rectifier is an important goal in molecular electronics. Until recently, however, and despite extensive experimental and theoretical work, many aspects of our fundamental understanding and practical challenges have remained unresolved and prevented the realization of such devices. Recent advances in custom-designed molecular systems with rectification ratios exceeding 10⁵ have now made these systems potentially competitive with existing silicon-based devices. Here, we provide an overview and critical analysis of recent progress in molecular rectification within single molecules, self-assembled monolayers, molecular multilayers, heterostructures, and metal-organic frameworks and coordination polymers. Examples of conceptually important and best-performing systems are discussed, alongside their rectification mechanisms. We present an outlook for the field, as well as prospects for the commercialization of molecular rectifiers.

Modulated Structure and Rectification Properties of a Molecular Junction by a Mixed Self-Assembled Monolayer

The organization of the self-assembled monolayer (SAM) determines its electronic structure and so governs the charge transport process and device performance when adopted into a molecular device. We report a systematic study on the supramolecular structure and rectification performance of the ferrocene (11-ferrocenyl-1-undecanethiol, FUT) based SAM modulated by mixed SAM with inert 1-undecanethiol (C₁₁SH) as diluent. We compared mixed SAMs by two different post assembly strategies, i.e., post assembly of C₁₁SH on FUT SAM and post assembly of FUT on C₁₁SH SAM. The organization and structure of FUT in the mixed SAM were extensively studied by cyclic voltammetry (CV) using the Laviron model. Rectification properties of the mixed SAM obtained using eutectic indium gallium (EGaIn) as the top electrode revealed that the magnitude and stability of the rectification ratio (RR) strongly correlated to not only the amount but also the phase structure and orientation of the FUT in the monolayer, resulting in a tunable RR and increased stability. The mixed monolayer achieved an increased performance relative to pure FUT by post assembling FUT on C₁₁SH SAM, which formed an optimally dense and well-packed monolayer with the FUT head resting on the top of the alkane SAM.

Conductance Switching in Liquid Crystal-Inspired Self-Assembled Monolayer Junctions

We present the prototype of a ferroelectric tunnel junction (FTJ), which is based on a self-assembled monolayer (SAM) of small, functional molecules. These molecules have a structure similar to those of liquid crystals, and they are embedded between two solid-state electrodes. The SAM, which is deposited through a short sequence of simple fabrication steps, is extremely thin (3.4 ± 0.5 nm) and highly uniform. The functionality of the FTJ is ingrained in the chemical structure of the SAM components: a conformationally flexible dipole that can be reversibly reoriented in an electrical field. Thus, the SAM acts as an electrically switchable tunnel barrier. Fabricated stacks of Al/Al₂O₃/SAM/Pb/Ag with such a polar SAM show pronounced hysteretic, reversible conductance switching at voltages in the range of ±2-3 V, with a conductance ratio of the low and the high resistive states of up to 100. The switching mechanism is analyzed using a combination of quantum chemical, molecular dynamics, and tunneling resistance calculation methods. In contrast to more common, inorganic material-based FTJs, our approach using SAMs of small organic molecules allows for a high degree of functional complexity and diversity to be integrated by synthetic standard methods, while keeping the actual device fabrication process robust and simple. We expect that this technology can be further developed toward a level that would then allow its application in the field of information storage and processing, in particular for in-memory and neuromorphic computing architectures.

Li-Ion Intercalation, Rectification, and Solid Electrolyte Interphase in Molecular Tunnel Junctions

This paper describes Li-ion intercalation into a pyrenyl-terminated self-assembled monolayer (SAM) on gold, inspired by the graphite anode in a Li-ion battery, and its effect on tunneling performance in a molecular junction incorporating the SAM. As the concentration of the Li-ion precursor ([LiPF₆]) increased from 0 to 10^-2 M, the rectification ratio increased to ∼10². Further experiments revealed that the intercalation-induced changes in the orientation of PYR group and in the HOMO energy level account for the enhanced rectification. Treatment with high concentrations of LiPF₆ (from 10^-2 to 10⁰ M) yielded a considerable solid electrolyte interphase (SEI), mainly composed of LiF, on the surface of the SAM, resulting in the disappearance of rectification. This was attributed to renormalization of the HOMO level back to that of the intact SAM, caused by the SEI layer. Our work demonstrates the interplay among Li-ion intercalation, SEI, and tunneling in the molecular junction, benefiting the research of molecular electronics as well as SAM-based batteries.

Empirical Parameter to Compare Molecule-Electrode Interfaces in Large-Area Molecular Junctions

This paper describes a simple model for comparing the degree of electronic coupling between molecules and electrodes across different large-area molecular junctions. The resulting coupling parameter can be obtained directly from current–voltage data or extracted from published data without fitting. We demonstrate the generalizability of this model by comparing over 40 different junctions comprising different molecules and measured by different laboratories. The results agree with existing models, reflect differences in mechanisms of charge transport and rectification, and are predictive in cases where experimental limitations preclude more sophisticated modeling. We also synthesized a series of conjugated molecular wires, in which embedded dipoles are varied systematically and at both molecule–electrode interfaces. The resulting current–voltage characteristics vary in nonintuitive ways that are not captured by existing models, but which produce trends using our simple model, providing insights that are otherwise difficult or impossible to explain. The utility of our model is its demonstrative generalizability, which is why simple observables like tunneling decay coefficients remain so widely used in molecular electronics despite the existence of much more sophisticated models. Our model is complementary, giving insights into molecule–electrode coupling across series of molecules that can guide synthetic chemists in the design of new molecular motifs, particularly in the context of devices comprising large-area molecular junctions.

Electronic Mechanism of In Situ Inversion of Rectification Polarity in Supramolecular Engineered Monolayer

This Communication describes polarity inversion in molecular rectification and the related mechanism. Using a supramolecular engineered, ultrastable, binary-mixed self-assembled monolayer (SAM) composed of an organic molecular diode (SC₁₁BIPY) and an inert reinforcement molecule (SC₈), we probed a rectification ratio (r)-voltage relationship over an unprecedentedly wide voltage range (up to |3.5 V|) with statistical significance. We observed positive polarity in rectification at |1.0 V| (r = 107), followed by disappearance of rectification at ∼|2.25 V|, and then eventual emergence of new rectification with the opposite polarity at ∼|3.5 V| (r = 0.006; 1/r = 162). The polarity inversion occurred with a span over 4 orders of magnitude in r. Low-temperature experiments, electronic structure analysis, and theoretical calculations revealed that the unusually wide voltage range permits access to molecular orbital energy levels that are inaccessible in the traditional narrow voltage regime, inducing the unprecedented in situ inversion of polarity.

Amine-Anchored Aromatic Self-Assembled Monolayer Junction: Structure and Electric Transport Properties

We studied the structure and transport properties of aromatic amine self-assembled monolayers (NH₂-SAMs) on an Au surface. The oligophenylene and oligoacene amines with variable lengths can form a densely packed and uniform monolayer under proper assembly conditions. Molecular junctions incorporating an eutectic Ga-In (EGaIn) top electrode were used to characterize the charge transport properties of the amine monolayer. The current density J of the junction decreases exponentially with the molecular length (d), as J = J₀ exp(-βd), which is a sign of tunneling transport, with indistinguishable values of J₀ and β for NH₂-SAMs of oligophenylene and oligoacene, indicating a similar molecule-electrode contact and tunneling barrier for two groups of molecules. Compared with the oligophenylene and oligoacene molecules with thiol (SH) as the anchor group, a similar β value (∼0.35 Å^-1) of the aromatic NH₂-SAM suggests a similar tunneling barrier, while a lower (by 2 orders of magnitude) injection current J₀ is attributed to lower electronic coupling Γ of the amine group with the electrode. These observations are further supported by single-level tunneling model fitting. Our study here demonstrates the NH₂-SAMs can work as an effective active layer for molecular junctions, and provide key physical parameters for the charge transport, paving the road for their applications in functional devices.

Quantitative analysis of weak current rectification in molecular tunnel junctions subject to mechanical deformation reveals two different rectification mechanisms for oligophenylene thiols versus alkane thiols

Metal-molecule-metal junctions based on alkane thiol (CnT) and oligophenylene thiol (OPTn) self-assembled monolayers (SAMs) and Au electrodes are expected to exhibit similar electrical asymmetry, as both junctions have one chemisorbed Au-S contact and one physisorbed, van der Waals contact. Asymmetry is quantified by the current rectification ratio RR apparent in the current-voltage (I-V) characteristics. Here we show that RR < 1 for CnT and RR > 1 for OPTn junctions, in contrast to expectation, and further, that RR behaves very differently for CnT and OPTn junctions under mechanical extension using the conducting probe atomic force microscopy (CP-AFM) testbed. The analysis presented in this paper, which leverages results from the previously validated single level model and ab initio quantum chemical calculations, allows us to explain the puzzling experimental findings for CnT and OPTn in terms of different current rectification mechanisms. Specifically, in CnT-based junctions the Stark effect creates the HOMO level shifting necessary for rectification, while for OPTn junctions the level shift arises from position-dependent coupling of the HOMO wavefunction with the junction electrostatic potential profile. On the basis of these mechanisms, our quantum chemical calculations allow quantitative description of the impact of mechanical deformation on the measured current rectification. Additionally, our analysis, matched to experiment, facilitates direct estimation of the impact of intramolecular electrostatic screening on the junction potential profile. Overall, our examination of current rectification in benchmark molecular tunnel junctions illuminates key physical mechanisms at play in single step tunneling through molecules, and demonstrates the quantitative agreement that can be obtained between experiment and theory in these systems.

Bias-Polarity-Dependent Direct and Inverted Marcus Charge Transport Affecting Rectification in a Redox-Active Molecular Junction

This paper describes the transition from the normal to inverted Marcus region in solid-state tunnel junctions consisting of self-assembled monolayers of benzotetrathiafulvalene (BTTF), and how this transition determines the performance of a molecular diode. Temperature-dependent normalized differential conductance analyses indicate the participation of the HOMO (highest occupied molecular orbital) at large negative bias, which follows typical thermally activated hopping behavior associated with the normal Marcus regime. In contrast, hopping involving the HOMO dominates the mechanism of charge transport at positive bias, yet it is nearly activationless indicating the junction operates in the inverted Marcus region. Thus, within the same junction it is possible to switch between Marcus and inverted Marcus regimes by changing the bias polarity. Consequently, the current only decreases with decreasing temperature at negative bias when hopping is "frozen out," but not at positive bias resulting in a 30-fold increase in the molecular rectification efficiency. These results indicate that the charge transport in the inverted Marcus region is readily accessible in junctions with redox molecules in the weak coupling regime and control over different hopping regimes can be used to improve junction performance.

Characterizing Chelation at Surfaces by Charge Tunneling

This paper describes a surface analysis technique that uses the "EGaIn junction" to measure tunneling current densities (J(V), amps/cm²) through self-assembled monolayers (SAMs) terminated in a chelating group and incorporating different transition metal ions. Comparisons of J(V) measurements between bare chelating groups and chelates are used to characterize the composition of the SAM and infer the dissociation constant (K_d, mol/L), as well as kinetic rate constants (k_off, L/mol·s; k_on, 1/s) of the reversible chelate-metal reaction. To demonstrate the concept, SAMs of 11-(4-methyl-2,2'-bipyrid-4'-yl (bpy))undecanethiol (HS(CH₂)₁₁bpy) were incubated within ethanol solutions of metal salts. After rinsing and drying the surface, measurements of current as a function of incubation time and concentration in solution are used to infer k_off, k_on, and K_d. X-ray photoelectron spectroscopy (XPS) provides an independent measure of surface composition to confirm inferences from J(V) measurements. Our experiments establish that (i) bound metal ions are stable to the rinsing step as long as the rinsing time, τ_rinse ≪ 1koff; (ii) the bound metal ions increase the current density at the negative bias and reduce the rectification observed with free bpy terminal groups; (iii) the current density as a function of the concentration of metal ions in solution follows a sigmoidal curve; and (iv) the values of K_d measured using J(V) are comparable to those measured using XPS, but larger than those measured in solution. The EGaIn junction, thus, provides a new tool for the analysis of the composition of the surfaces that undergo reversible chemical reactions with species in solution.

Interstitially Mixed Self-Assembled Monolayers Enhance Electrical Stability of Molecular Junctions

Electrical breakdown is a critical problem in electronics. In molecular electronics, it becomes more problematic because ultrathin molecular monolayers have delicate and defective structures and exhibit intrinsically low breakdown voltages, which limit device performances. Here, we show that interstitially mixed self-assembled monolayers (imSAMs) remarkably enhance electrical stability of molecular-scale electronic devices without deteriorating function and reliability. The SAM of the sterically bulky matrix (SC₁₁BIPY rectifier) molecule is diluted with a skinny reinforcement (SC_n) molecule via the new approach, so-called repeated surface exchange of molecules (ReSEM). Combined experiments and simulations reveal that the ReSEM yields imSAMs wherein interstices between the matrix molecules are filled with the reinforcement molecules and leads to significantly enhanced breakdown voltage inaccessible by traditional pure or mixed SAMs. Thanks to this, bias-driven disappearance and inversion of rectification is unprecedentedly observed. Our work may help to overcome the shortcoming of SAM's instability and expand the functionalities.

Solid State Dilution Controls Marcus Inverted Transport in Rectifying Molecular Junctions

Traditional Marcus theory accounts for electron transfer reactions in solutions, and the polarity of solvent molecule matters for them. How such an environment polarity affects electron transfer reactions in solid-state devices, however, remains uncertain. This paper describes how the Marcus inverted charge transport is influenced by solid-state molecular dilution in large-area tunneling junctions. A monolayer of 2,2'-bipyridyl terminated n-alkanethiolate (SC₁₁BIPY), which rectifies currents via electron hopping within the inverted regime, is diluted with n-alkanethiolate (SC_n) of different lengths (n = 8, 10, or 18) or at different surface mole fractions. The dilution introduces nonpolar environments within the monolayer, hinders stabilization of charged BIPY species upon electron hopping, and pushes the equilibrium of BIPY ⇄ BIPY^•- process toward the reverse direction. Our work demonstrates that solid-state molecular dilution permits systematic control of the environment polarity of active component in nanoscale devices, much like solvent polarity control in solution, and their performances.

Rectification in Molecular Tunneling Junctions Based on Alkanethiolates with Bipyridine-Metal Complexes

This paper addresses the mechanism for rectification in molecular tunneling junctions based on alkanethiolates terminated by a bipyridine group complexed with a metal ion, that is, having the structure Au^TS-S(CH₂)₁₁BIPY-MCl₂ (where M = Co or Cu) with a eutectic indium-gallium alloy top contact (EGaIn, 75.5% Ga 24.5% In). Here, Au^TS-S(CH₂)₁₁BIPY is a self-assembled monolayer (SAM) of an alkanethiolate with 4-methyl-2,2'-bipyridine (BIPY) head groups, on template-stripped gold (Au^TS). When the SAM is exposed to cobalt(II) chloride, SAMs of the form Au^TS-S(CH₂)₁₁BIPY-CoCl₂ rectify current with a rectification ratio of r⁺ = 82.0 at ±1.0 V. The rectification, however, disappears (r⁺ = 1.0) when the SAM is exposed to copper(II) chloride instead of cobalt. We draw the following conclusions from our experimental results: (i) Au^TS-S(CH₂)₁₁BIPY-CoCl₂ junctions rectify current because only at positive bias (+1.0 V) is there an accessible molecular orbital (the LUMO) on the BIPY-CoCl₂ moiety, while at negative bias (-1.0 V), neither the energy level of the HOMO or the LUMO lies between the Fermi levels of the electrodes. (ii) Au^TS-S(CH₂)₁₁BIPY-CuCl₂ junctions do not rectify current because there is an accessible molecular orbital on the BIPY-CuCl₂ moiety at both negative and positive bias (the HOMO is accessible at negative bias, and the LUMO is accessible at positive bias). The difference in accessibility of the HOMO levels at -1.0 V causes charge transfer-at negative bias-to take place via Fowler-Nordheim tunneling in BIPY-CoCl₂ junctions, and via direct tunneling in BIPY-CuCl₂ junctions. This difference in tunneling mechanism at negative bias is the origin of the difference in rectification ratio between BIPY-CoCl₂ and BIPY-CuCl₂ junctions.