Understanding the Phase Transition Evolution Mechanism of Partially M2 Phased VO2 Film by Hydrogen Incorporation

Nanostructured Vanadium Dioxide Materials for Optical Sensing Applications

Vanadium dioxide (VO2) is one of the strongly correlated materials exhibiting a reversible insulator-metal phase transition accompanied by a structural transition from a low-temperature monoclinic phase to high-temperature rutile phase near room temperature. Due to the dramatic change in electrical resistance and optical transmittance of VO2, it has attracted considerable attention towards the electronic and optical device applications, such as switching devices, memory devices, memristors, smart windows, sensors, actuators, etc. The present review provides an overview of several methods for the synthesis of nanostructured VO2, such as solution-based chemical approaches (sol-gel process and hydrothermal synthesis) and gas or vapor phase synthesis techniques (pulsed laser deposition, sputtering method, and chemical vapor deposition). This review also presents stoichiometry, strain, and doping engineering as modulation strategies of physical properties for nanostructured VO2. In particular, this review describes ultraviolet-visible-near infrared photodetectors, optical switches, and color modulators as optical sensing applications associated with nanostructured VO2 materials. Finally, current research trends and perspectives are also discussed.

Reversible Entropy-Driven Defect Migration and Insulator-Metal Transition Suppression in VO2 Nanostructures for Phase-Change Electronic Switching

Oxygen defects are among essential issues and required to be manipulated in correlated electronic oxides with insulator-metal transition (IMT). Besides, surface and interface control are necessary but challenging in field-induced electronic switching towards advanced IMT-triggered transistors and optical modulators. Herein, we demonstrated reversible entropy-driven oxygen defect migrations and reversible IMT suppression in vanadium dioxide (VO₂ ) phase-change electronic switching. The initial IMT was suppressed with oxygen defects, which is caused by the entropy change during reversed surface oxygen ionosorption on the VO₂ nanostructures. This IMT suppression is reversible and reverts when the adsorbed oxygen extracts electrons from the surface and heals defects again. The reversible IMT suppression observed in the VO₂ nanobeam with M2 phase is accompanied by large variations in the IMT temperature. We also achieved irreversible and stable IMT by exploiting an Al₂ O₃ partition layer prepared by atomic layer deposition (ALD) to disrupt the entropy-driven defect migration. We expected that such reversible modulations would be helpful for understanding the origin of surface-driven IMT in correlated vanadium oxides, and constructing functional phase-change electronic and optical devices.

The Role of Local DFT+U Minima in the First-Principles Modeling of the Metal-Insulator Transition in Vanadium Dioxide

The DFT+U method is frequently employed to improve the first-principles description of strongly correlated materials. However, it is prone to deliver metastable electronic minima. While these local minima of the DFT+U method are often considered to be computational artifacts, their physical meaning and relationship to true excited states remains unclear. In this work, the possibility of theoretically modeling transformations in the solid state that require thermal or optical excitations of electrons is explored, taking into account the metastable states of the computationally undemanding DFT+U formalism. For this purpose, we choose to examine the example of the VO₂ metal-insulator transition. Metastable states that are located on different electronic potential energy surfaces are found to correspond to experimentally observed VO₂ phases. The identified metastable electronic states can be used to model the collapse of the VO₂ band gap at elevated temperatures and upon photoexcitation as well as other monoclinic-monoclinic phase transformations. The results suggest that local DFT+U minima can indeed carry physical meaning, while they remain under-reported in theoretical literature on transition metal oxides like VO₂.

Tuning Phase Transition and Thermochromic Properties of Vanadium Dioxide Thin Films via Cobalt Doping

Vanadium dioxide (VO₂) featuring a distinct thermally triggered phase transition is regarded as the most attractive thermochromic material for smart window applications. However, the high transition temperature (∼67 °C) and moderate luminous transmittance (<50%) of the pristine VO₂ circumvent room temperature applications. In this work, epitaxial cobalt-doped VO₂ thin films were fabricated to tailor the electric and optical properties on a c-plane sapphire substrate. At the highest doping concentration of 10%, the transition temperature of VO₂ is reduced to 44 °C, accompanied by a high luminous transmittance of 79% for single-element Co-doped VO₂. The roles of cobalt doping and detailed band variation are fully explained experimentally and by modeling (DFT calculation), respectively. Furthermore, the dramatically increased carrier concentration in cobalt-doped VO₂ underscores the promising future of cobalt-doped VO₂ unveiled by temperature-dependent Hall effect measurement.

Octahedral Symmetry Modification Induced Orbital Occupancy Variation in VO2

Octahedral symmetry is one of the parameters to tune the functional properties of complex oxides. VO₂, a complex oxide with a 3d¹ electronic system, exhibits an insulator-metal transition (IMT) near room temperature (∼68 °C), accompanying a change in the octahedral structure from asymmetrical to symmetrical. However, the role of octahedral symmetry in VO₂ on the IMT characteristics is unclear. Crystal and electronic structure analyses combined with density-functional-theory calculations showed the bandwidth-controlled IMT characteristics of monoclinic VO₂ with high octahedral symmetry. The expanded apical V-O length for a high octahedral symmetry of a VO₂ film increased the bandwidth of the conduction band by depressing V 3d-O 2p hybridization. As a result, the interdimer hopping energy increased and thereby decreased the IMT temperature, although the short V-V chain enhanced electron correlation. These findings suggest that octahedral symmetry can control the IMT characteristics of VO₂ by changing the orbital occupancy.