Outstanding Broadband (532 nm to 2.2 μm) and Very Efficient Optical Limiting Performance of Some Defect-Engineered Graphenes

Size-dependent linear and nonlinear optical responses of silicon clusters

Owing to strong quantum confinement effects and no periodic constraints, the geometric and electronic structures of silicon clusters differ from those of crystalline silicon. Although previous studies have elucidated the optical properties of silicon clusters, some issues remain unresolved. To address these, this study examined the size-dependent linear and nonlinear optical responses of silicon clusters through first-principles calculations. Silicon clusters exhibited lone-pair-electron-dominated optical response behaviors. With the investigated size range, the orientationally average polarizability (αave) and second-order hyperpolarizability (γave) increased with cluster size. However, αave and γave per atom exhibited no evident size-dependent trends owing to co-modulation of the lone-pair-number-to-atomic-number ratio and geometry. αave and γave were notably sensitive to the nuclear binding strength of lone-pair electrons. Thus, the nonlinear optical effects of silicon clusters are superior to those of phosphorus and sulfur clusters. This investigation offers valuable insights into the optical responses of atomic-precision clusters.

Ultrafast optical limiting ability of trans-stilbene enhanced and broadened by a donor-π-acceptor structure

It has been shown that trans-stilbene (TSB) has great potential as an ultrafast optical limiting material through the process of three-photon absorption (3PA)-induced excited state absorption (ESA). The present paper shows that the main transitions in the absorption bands of TSB are mostly local excitation. In order to improve the optical limiting performance of TSB, a series of TSB derivatives with an electron donor-π-acceptor structure are designed. The analysis of π electron localized orbital locators (LOL-π) reveals that the distribution of π electrons in the derivatives of TSB is much more continuous compared to that in the original TSB. This results in the main transitions in the ground state absorption (GSA) and ESA of the TSB derivatives showing obvious charge transfer characteristics, and the GSA, ESA and 3PA bands are largely enhanced and broadened compared to those of the original TSB molecule. These observations are well supported by the enlarged transition dipole moments of the main transitions in GSA and ESA. With these results, it is clearly shown that the TSB derivatives are promising optical limiting materials. Our observations provide clues for the development of optical limiting materials based on TSB.

Three-Photon-Induced Singlet Excited-State Absorption for the Tunable Ultrafast Optical-Limiting in Distyrylbenzene: A First-Principles Study

The ground and first singlet excited state absorption in distyrylbenzene(DSB) are simulated based on the linear-response time dependent density functional theory(LR-TDDFT). It is found that distyrylbenzene shows strong reverse saturable...

Polyoxometalates with tunable third-order nonlinear optical and superbroadband optical limiting properties

Several polyoxomolybdovanadates with tunable structures and NLO properties, and their application as superbroadband optical limiters utilizing POM-doped gel glasses.

Silicon Nanosheets: An Emerging 2D Photonic Material with a Large Transient Nonlinear Optical Response beyond Graphene

The present work reports on the transient nonlinear optical (NLO) responses of two different types of 2D silicon nanosheets (SiNSs), namely hydride-terminated silicon nanosheets (SiNS-H) and 1-dodecene-functionalized silicon nanosheets (SiNS-dodecene). The main motivation of this study was to extend the knowledge regarding the NLO properties of these Si-based materials, for which very few published studies exist so far. For that purpose, the NLO responses of SiNS-H and SiNS-dodecene were investigated experimentally in the nanosecond regime at 532 and 1064 nm using the Z-scan technique, while the obtained results were compared to those of certain recently studied graphene nanosheets. SiNS-dodecene was found to exhibit the largest third-order susceptibility χ(3) values at both excitation wavelengths, most probably ascribed to the presence of point defects, indicating the importance of chemical functionalization for the efficient enhancement and tailoring of the NLO properties of these emerging 2D Si-based materials. Most importantly, the results demonstrated that the present silicon nanosheets revealed comparable and even larger NLO responses than graphene nanosheets. Undoubtedly, SiNSs could be strong competitors of graphene for applications in 2D-material-based photonics and optoelectronics.