Tunable Rashba Spin Splitting in Two-Dimensional Polar Perovskites

Gated spin manipulation in a bipolar Rashba semiconductor: a Janus TeSSe monolayer

It is very important to realize the electronically controlled spin direction for spintronic devices. Inspired by the bipolar Rashba semiconductor (BRS) concept recently proposed by Yang's group (X. Fu, et al. J. Phys. Chem. Lett., 2023, 14(50), 11292-11297), which presented a novel solution for spin precession manipulation using a BRS, through first-principles calculations, we confirm that Janus TeSSe is a BRS. Therefore, in a spin field-effect transistor based on BRS Janus TeSSe, the spin texture direction can be electronically controlled by applying a gate voltage. We describe in detail the special opposite spin texture of Janus TeSSe, and how the gate voltage regulates the spin direction of the physical mechanism. Furthermore, the regulation of the energy band and Rashba coefficient by charge doping, external electric field, and strain engineering is studied. In summary, we propose a new Janus BRS TeSSe monolayer capable of achieving electrical control of rotation through electrical gating, which enriches the family of two-dimensional BRS materials and inspires experimental researchers to conduct studies related to spin manipulation.

Layer-dependent spin texture and origins of Rashba splitting quenching in the 2D CsPbI3 perovskite

The spin-orbit coupling in inorganic perovskite materials containing heavy elements causes interesting electronic characteristics such as Rashba and Dresselhaus effects. Several studies have reported significant band splitting in the presence of asymmetry, while the impacts of the external field strength, surface termination on the electronic structure still need to be resolved. In the current study, a systematic relation between the external parameters and the band splitting in CsPbI3 slabs is clarified through first-principles calculations. Here, we examine the band splitting and spin patterns of CsPbI3 slabs exposed to an external electric field ranging from zero to hundreds of kV cm-1. Our results indicate apparent non-linear behavior of the Rashba coefficient along with a turning point for the band splitting for a definite external field. Here, the origin of this quench in the band splitting is explained in terms of spatial localization of the wave functions and clear change in their center of charge going from low to high electric fields. The findings not only explain the origin of quenching band splitting but also reveal the external field's significance in the spin texture and recombination rate of 2D perovskites. The current research outcome paves the way for atomic scale engineering of perovskite materials for a wide range of applications.

Universal machine learning aided synthesis approach of two-dimensional perovskites in a typical laboratory

The past decade has witnessed the significant efforts in novel material discovery in the use of data-driven techniques, in particular, machine learning (ML). However, since it needs to consider the precursors, experimental conditions, and availability of reactants, material synthesis is generally much more complex than property and structure prediction, and very few computational predictions are experimentally realized. To solve these challenges, a universal framework that integrates high-throughput experiments, a priori knowledge of chemistry, and ML techniques such as subgroup discovery and support vector machine is proposed to guide the experimental synthesis of materials, which is capable of disclosing structure-property relationship hidden in high-throughput experiments and rapidly screening out materials with high synthesis feasibility from vast chemical space. Through application of our approach to challenging and consequential synthesis problem of 2D silver/bismuth organic-inorganic hybrid perovskites, we have increased the success rate of the synthesis feasibility by a factor of four relative to traditional approaches. This study provides a practical route for solving multidimensional chemical acceleration problems with small dataset from typical laboratory with limited experimental resources available.

Bipolar Rashba Semiconductors: A Class of Nonmagnetic Materials for Electrical Spin Manipulation

The realization of the electrical control of spin is highly desirable. One promising approach is by regulating the Rashba spin-orbit coupling effect of materials through external electric fields. However, this method requires materials to possess either a high electric field response and a large Rashba constant or the simultaneous presence of Rashba splitting and ferroelectric polarization. These stringent requirements result in a scarcity of suitable materials. In order to surpass these limitations and exploit a new prospect for spin manipulation via the Rashba effect, a conceptual class of materials named bipolar Rashba semiconductors (BRS) is proposed, whose valence band and conduction band possess opposite spin texture directions when approaching the Fermi level. The unique electronic structure of BRS makes it feasible to reverse the spin precession by simply applying a gate voltage. The existence of BRS is confirmed through first-principles calculations on the two-dimensional (2D) material AlBiS3.

Mechanism of the Anomalous Dependence between Spin-Orbit Coupling and Dimensionality in Lead Halide Perovskites

The spin-orbit coupling (SOC) effect of lead (Pb) atoms is a consequential attribute of the unique optoelectronic and defect properties of lead halide perovskites (LHPs). It has been found that the SOC effect varies significantly as the structural dimensionality changes with an anomalous dependence; i.e., while the SOC strength monotonically decreases as structural dimensionality decreases from three-dimensional (3D) to two-dimensional (2D) and then to one-dimensional (1D), the zero-dimensional (0D) SOC strength is greater than the 1D SOC strength. The underlying mechanism of such a SOC dimensionality dependence anomaly remains elusive. In this work, we show that Pb 6p energy splitting increases from 3D to 2D and to 1D LHPs due to the increased degree of distortion, leading to a reduced SOC strength. However, the degree of distortion decreases for the 1D to 0D transformation, resulting in reverse SOC enhancement. The mechanism described in this work can be employed to regulate the SOC effect in the design of perovskite materials.

Valley-Polarized Interlayer Excitons in 2D Chalcogenide-Halide Perovskite-van der Waals Heterostructures

Interlayer excitons (IXs) in two-dimensional (2D) heterostructures provide an exciting avenue for exploring optoelectronic and valleytronic phenomena. Presently, valleytronic research is limited to transition metal dichalcogenide (TMD) based 2D heterostructure samples, which require strict lattice (mis) match and interlayer twist angle requirements. Here, we explore a 2D heterostructure system with experimental observation of spin-valley layer coupling to realize helicity-resolved IXs, without the requirement of a specific geometric arrangement, i.e., twist angle or specific thermal annealing treatment of the samples in 2D Ruddlesden-Popper (2DRP) halide perovskite/2D TMD heterostructures. Using first-principle calculations, time-resolved and circularly polarized luminescence measurements, we demonstrate that Rashba spin-splitting in 2D perovskites and strongly coupled spin-valley physics in monolayer TMDs render spin-valley-dependent optical selection rules to the IXs. Consequently, a robust valley polarization of ∼14% with a long exciton lifetime of ∼22 ns is obtained in type-II band aligned 2DRP/TMD heterostructure at ∼1.54 eV measured at 80 K. Our work expands the scope for studying spin-valley physics in heterostructures of disparate classes of 2D semiconductors.

Insights into selected 2D piezo Rashba semiconductors for self-powered flexible piezo spintronics: material to contact properties

The new paradigm in electronics consists in realizing the seamless integration of many properties latent in nanomaterials, such as mechanical flexibility, strong spin-orbit coupling (Rashba spin splitting-RSS), and piezoelectricity. Taking cues from the pointers given on 1D ZnO nanowires (ACS Nano2018121811-20), the concept can be extended to multifunctional two-dimensional (2D) materials, which can serve as an ideal platform in next-generation electronics such as self-powered flexible piezo-spintronic device. However, a microscopically clear understanding reachable from the state-of-the-art density functional theory-based approaches is a prerequisite to advancing this research domain. Atomic-scale insights gained from meticulously performed scientific computations can firmly anchor the growth of this important research field, and that is of undeniable relevance from scientific and technological outlooks. This article reviews the scientific advance in understanding 2D materials hosting all the essential properties, i.e. flexibility, piezoelectricity, and RSS. Important 2D semiconducting monolayers that deserve a special mention, include monolayers of buckled MgX (X = S, Se, Te), CdTe, ZnTe, Janus structures of transition metal trichalcogenides, Janus tellurene and 2D perovskites. van Der Waals multilayers are also built to design multifunctional materials via modulation of the stacking sequence and interlayer coupling between the constituent layers. External electric field, strain engineering and charge doping are perturbations mainly used to tune the spintronic properties. Finally, the contact properties of these monolayers are also crucial for their actual implementation in electronic devices. The nature of the contacts, Schottky/Ohmic, needs to be carefully examined first as it controls the device's performance. In this regard, the rare occurrence of Ohmic contact in graphene/MgS van der Waals hetero bilayer has been presented in this review article.

Giant tunable Rashba spin splitting in two-dimensional polar perovskites TlSnX3 (X = Cl, Br, I)

The electronic structures and Rashba effect of two-dimensional polar tetragonal perovskites TlSnX₃ (X = Cl, Br, I) are investigated by first-principles density functional theory, and intrinsic Rashba effects are found around the Γ point. In particular, TlSnI₃ has the largest Rashba constant of 1.072 eV Å^-1. Additionally, TlSnBr₃ and TlSnI₃ respond strongly to the applied electric field, and the electric field responsivity of TlSnI₃ can reach 0.790 e Ų. Therefore, due to the large Rashba constants and strong electric field responses, these 2D polar perovskites are promising semiconductor materials with short channel lengths. The nano-scale short spin coherence length can keep the spin coherence of spin FETs, which is superior to the traditional 3D micron spin FETs, and will show a broad application prospect in the Rashba semiconductor field.

Spin-Orbit Coupling in 2D Semiconductors: A Theoretical Perspective

This theoretical Perspective reviews spin-orbit coupling (SOC), including the Rashba effect and Dresselhaus effect, in two-dimensional (2D) semiconductors. We first introduce the origin of the Rashba effect and Dresselhaus effect using the Hamiltonian models; we then summarize 2D Rashba semiconductors predicted by first-principles density functional theory (DFT) calculations, including AB binary monolayers, Janus monolayers, 2D perovskites, and so on. We also review various manipulating techniques of the Rashba effect on 2D semiconductors, such as external electric field, strain engineering, charge doping, interlayer interactions, proximity effect of substrates, and external magnetic field. We then briefly summarize the applications of SOC, including the generation, detection, and manipulation of spin currents in spin Hall effect transistors and spin field effect transistors. Finally, we conclude this Perspective and propose three promising research fields of SOC in low-dimensional semiconductors, including the nonlinear SOC Hamiltonian model, 2D ferroelectric SOC semiconductors, and 1D Rashba model and semiconductors. This theoretical Perspective enriches the fundamental understanding of SOC in 2D semiconductors and will help in the design of new types of spintronic devices in future experiments.

Origin of Rashba Spin Splitting and Strain Tunability in Ferroelectric Bulk CsPbF3

Spin-orbit coupling (SOC) in conjunction with broken inversion symmetry acts as a key ingredient for several intriguing quantum phenomena, viz., Rashba-Dresselhaus (RD) effect. The coexistence of spontaneous polarization and the RD effect in ferroelectric (FE) materials enables the electrical control of spin degrees of freedom. Here, we explore the FE lead halide perovskite CsPbF₃ as a potential candidate in the field of spintronics by employing state-of-the-art first-principles-based methodologies, viz., density functional theory (DFT) with semilocal and hybrid functional (HSE06) combined with SOC and many-body perturbation theory (G₀W₀). For a deeper understanding of the observed spin splitting, the spin textures are analyzed using the k.p model Hamiltonian. We find there is no out-of-plane spin component indicating that the Rashba splitting dominates over Dresselhaus splitting. We also observe that the strength of Rashba spin splitting can be substantially tuned on application of uniaxial strain (±5%). More interestingly, we notice reversible spin textures by switching the FE polarization in CsPbF₃ perovskite, making it potent for perovskite-based spintronic applications.