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Chen SB, Yan WJ, Ang YS. Gated spin manipulation in a bipolar Rashba semiconductor: a Janus TeSSe monolayer. Phys Chem Chem Phys 2024. [PMID: 39431461 DOI: 10.1039/d4cp02910k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/22/2024]
Abstract
It is very important to realize the electronically controlled spin direction for spintronic devices. Inspired by the bipolar Rashba semiconductor (BRS) concept recently proposed by Yang's group (X. Fu, et al. J. Phys. Chem. Lett., 2023, 14(50), 11292-11297), which presented a novel solution for spin precession manipulation using a BRS, through first-principles calculations, we confirm that Janus TeSSe is a BRS. Therefore, in a spin field-effect transistor based on BRS Janus TeSSe, the spin texture direction can be electronically controlled by applying a gate voltage. We describe in detail the special opposite spin texture of Janus TeSSe, and how the gate voltage regulates the spin direction of the physical mechanism. Furthermore, the regulation of the energy band and Rashba coefficient by charge doping, external electric field, and strain engineering is studied. In summary, we propose a new Janus BRS TeSSe monolayer capable of achieving electrical control of rotation through electrical gating, which enriches the family of two-dimensional BRS materials and inspires experimental researchers to conduct studies related to spin manipulation.
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Affiliation(s)
- Shao-Bo Chen
- College of Electronic and Information Engineering, Anshun University, Anshun 561000, People Republic of China.
| | - Wan-Jun Yan
- College of Electronic and Information Engineering, Anshun University, Anshun 561000, People Republic of China.
| | - Yee Sin Ang
- Science, Mathematics and Technology (SMT), Singapore University of Technology and Design (SUTD), 8 Somapah Road, Singapore 487372, Singapore.
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2
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Nazari S, T Azar Y. Layer-dependent spin texture and origins of Rashba splitting quenching in the 2D CsPbI 3 perovskite. Phys Chem Chem Phys 2024; 26:14866-14873. [PMID: 38738465 DOI: 10.1039/d4cp00165f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/14/2024]
Abstract
The spin-orbit coupling in inorganic perovskite materials containing heavy elements causes interesting electronic characteristics such as Rashba and Dresselhaus effects. Several studies have reported significant band splitting in the presence of asymmetry, while the impacts of the external field strength, surface termination on the electronic structure still need to be resolved. In the current study, a systematic relation between the external parameters and the band splitting in CsPbI3 slabs is clarified through first-principles calculations. Here, we examine the band splitting and spin patterns of CsPbI3 slabs exposed to an external electric field ranging from zero to hundreds of kV cm-1. Our results indicate apparent non-linear behavior of the Rashba coefficient along with a turning point for the band splitting for a definite external field. Here, the origin of this quench in the band splitting is explained in terms of spatial localization of the wave functions and clear change in their center of charge going from low to high electric fields. The findings not only explain the origin of quenching band splitting but also reveal the external field's significance in the spin texture and recombination rate of 2D perovskites. The current research outcome paves the way for atomic scale engineering of perovskite materials for a wide range of applications.
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Affiliation(s)
- Safieh Nazari
- Physics and Accelerators Research School, Nuclear Science and Technology Research Institute, Tehran, Iran.
| | - Yavar T Azar
- Physics and Accelerators Research School, AEOI, Tehran, Iran
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3
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Wu Y, Wang CF, Ju MG, Jia Q, Zhou Q, Lu S, Gao X, Zhang Y, Wang J. Universal machine learning aided synthesis approach of two-dimensional perovskites in a typical laboratory. Nat Commun 2024; 15:138. [PMID: 38167836 PMCID: PMC10761762 DOI: 10.1038/s41467-023-44236-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/23/2023] [Accepted: 12/05/2023] [Indexed: 01/05/2024] Open
Abstract
The past decade has witnessed the significant efforts in novel material discovery in the use of data-driven techniques, in particular, machine learning (ML). However, since it needs to consider the precursors, experimental conditions, and availability of reactants, material synthesis is generally much more complex than property and structure prediction, and very few computational predictions are experimentally realized. To solve these challenges, a universal framework that integrates high-throughput experiments, a priori knowledge of chemistry, and ML techniques such as subgroup discovery and support vector machine is proposed to guide the experimental synthesis of materials, which is capable of disclosing structure-property relationship hidden in high-throughput experiments and rapidly screening out materials with high synthesis feasibility from vast chemical space. Through application of our approach to challenging and consequential synthesis problem of 2D silver/bismuth organic-inorganic hybrid perovskites, we have increased the success rate of the synthesis feasibility by a factor of four relative to traditional approaches. This study provides a practical route for solving multidimensional chemical acceleration problems with small dataset from typical laboratory with limited experimental resources available.
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Affiliation(s)
- Yilei Wu
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, 211189, Nanjing, China
| | - Chang-Feng Wang
- Institute for Science and Applications of Molecular Ferroelectrics, Key Laboratory of the Ministry of Education for Advanced Catalysis Materials, Zhejiang Normal University, 321004, Jinhua, China
| | - Ming-Gang Ju
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, 211189, Nanjing, China.
| | - Qiangqiang Jia
- Institute for Science and Applications of Molecular Ferroelectrics, Key Laboratory of the Ministry of Education for Advanced Catalysis Materials, Zhejiang Normal University, 321004, Jinhua, China
| | - Qionghua Zhou
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, 211189, Nanjing, China
| | - Shuaihua Lu
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, 211189, Nanjing, China
| | - Xinying Gao
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, 211189, Nanjing, China
| | - Yi Zhang
- Institute for Science and Applications of Molecular Ferroelectrics, Key Laboratory of the Ministry of Education for Advanced Catalysis Materials, Zhejiang Normal University, 321004, Jinhua, China.
| | - Jinlan Wang
- Key Laboratory of Quantum Materials and Devices of Ministry of Education, School of Physics, Southeast University, 211189, Nanjing, China.
- Suzhou Laboratory, Suzhou, China.
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4
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Fu X, Jia C, Sheng L, Li Q, Yang J, Li X. Bipolar Rashba Semiconductors: A Class of Nonmagnetic Materials for Electrical Spin Manipulation. J Phys Chem Lett 2023; 14:11292-11297. [PMID: 38063426 DOI: 10.1021/acs.jpclett.3c02917] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/22/2023]
Abstract
The realization of the electrical control of spin is highly desirable. One promising approach is by regulating the Rashba spin-orbit coupling effect of materials through external electric fields. However, this method requires materials to possess either a high electric field response and a large Rashba constant or the simultaneous presence of Rashba splitting and ferroelectric polarization. These stringent requirements result in a scarcity of suitable materials. In order to surpass these limitations and exploit a new prospect for spin manipulation via the Rashba effect, a conceptual class of materials named bipolar Rashba semiconductors (BRS) is proposed, whose valence band and conduction band possess opposite spin texture directions when approaching the Fermi level. The unique electronic structure of BRS makes it feasible to reverse the spin precession by simply applying a gate voltage. The existence of BRS is confirmed through first-principles calculations on the two-dimensional (2D) material AlBiS3.
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Affiliation(s)
- Xiaomin Fu
- Key Laboratory of Precision and Intelligent Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, China
- Department of Chemical Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Chao Jia
- Key Laboratory of Precision and Intelligent Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, China
- Department of Chemical Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Li Sheng
- Key Laboratory of Precision and Intelligent Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, China
- Department of Chemical Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Qunxiang Li
- Key Laboratory of Precision and Intelligent Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, China
- Department of Chemical Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230088, China
| | - Jinlong Yang
- Key Laboratory of Precision and Intelligent Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, China
- Department of Chemical Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230088, China
| | - Xingxing Li
- Key Laboratory of Precision and Intelligent Chemistry, University of Science and Technology of China, Hefei, Anhui 230026, China
- Department of Chemical Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China
- Hefei National Laboratory, University of Science and Technology of China, Hefei, Anhui 230088, China
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5
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Xian Y, Wang X, Yan Y. Mechanism of the Anomalous Dependence between Spin-Orbit Coupling and Dimensionality in Lead Halide Perovskites. J Phys Chem Lett 2023; 14:8811-8819. [PMID: 37750760 DOI: 10.1021/acs.jpclett.3c02161] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/27/2023]
Abstract
The spin-orbit coupling (SOC) effect of lead (Pb) atoms is a consequential attribute of the unique optoelectronic and defect properties of lead halide perovskites (LHPs). It has been found that the SOC effect varies significantly as the structural dimensionality changes with an anomalous dependence; i.e., while the SOC strength monotonically decreases as structural dimensionality decreases from three-dimensional (3D) to two-dimensional (2D) and then to one-dimensional (1D), the zero-dimensional (0D) SOC strength is greater than the 1D SOC strength. The underlying mechanism of such a SOC dimensionality dependence anomaly remains elusive. In this work, we show that Pb 6p energy splitting increases from 3D to 2D and to 1D LHPs due to the increased degree of distortion, leading to a reduced SOC strength. However, the degree of distortion decreases for the 1D to 0D transformation, resulting in reverse SOC enhancement. The mechanism described in this work can be employed to regulate the SOC effect in the design of perovskite materials.
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Affiliation(s)
- Yeming Xian
- Department of Physics and Astronomy and Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Toledo, Ohio 43606, United States
| | - Xiaoming Wang
- Department of Physics and Astronomy and Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Toledo, Ohio 43606, United States
| | - Yanfa Yan
- Department of Physics and Astronomy and Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Toledo, Ohio 43606, United States
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Singh S, Gong W, Stevens CE, Hou J, Singh A, Zhang H, Anantharaman SB, Mohite AD, Hendrickson JR, Yan Q, Jariwala D. Valley-Polarized Interlayer Excitons in 2D Chalcogenide-Halide Perovskite-van der Waals Heterostructures. ACS NANO 2023; 17:7487-7497. [PMID: 37010369 DOI: 10.1021/acsnano.2c12546] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Interlayer excitons (IXs) in two-dimensional (2D) heterostructures provide an exciting avenue for exploring optoelectronic and valleytronic phenomena. Presently, valleytronic research is limited to transition metal dichalcogenide (TMD) based 2D heterostructure samples, which require strict lattice (mis) match and interlayer twist angle requirements. Here, we explore a 2D heterostructure system with experimental observation of spin-valley layer coupling to realize helicity-resolved IXs, without the requirement of a specific geometric arrangement, i.e., twist angle or specific thermal annealing treatment of the samples in 2D Ruddlesden-Popper (2DRP) halide perovskite/2D TMD heterostructures. Using first-principle calculations, time-resolved and circularly polarized luminescence measurements, we demonstrate that Rashba spin-splitting in 2D perovskites and strongly coupled spin-valley physics in monolayer TMDs render spin-valley-dependent optical selection rules to the IXs. Consequently, a robust valley polarization of ∼14% with a long exciton lifetime of ∼22 ns is obtained in type-II band aligned 2DRP/TMD heterostructure at ∼1.54 eV measured at 80 K. Our work expands the scope for studying spin-valley physics in heterostructures of disparate classes of 2D semiconductors.
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Affiliation(s)
- Simrjit Singh
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
- Department of Applied Physics and Eindhoven Hendrik Casimir Institute, Eindhoven University of Technology, Eindhoven, 5612 AZ, The Netherlands
| | - Weiyi Gong
- Department of Physics, Northeastern University, Boston, Massachusetts 02115, United States
| | - Christopher E Stevens
- Sensors Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433, United States
- KBR Inc., Beavercreek, Ohio 45431, United States
| | - Jin Hou
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Aditya Singh
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Huiqin Zhang
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Surendra B Anantharaman
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
| | - Aditya D Mohite
- Department of Materials Science and NanoEngineering, Rice University, Houston, Texas 77005, United States
| | - Joshua R Hendrickson
- Sensors Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433, United States
| | - Qimin Yan
- Department of Physics, Northeastern University, Boston, Massachusetts 02115, United States
| | - Deep Jariwala
- Department of Electrical and Systems Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, United States
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Is F, Mohanta MK, Sarkar AD. Insights into selected 2D piezo Rashba semiconductors for self-powered flexible piezo spintronics: material to contact properties. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 35:253001. [PMID: 36958043 DOI: 10.1088/1361-648x/acc70f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/19/2022] [Accepted: 03/23/2023] [Indexed: 06/18/2023]
Abstract
The new paradigm in electronics consists in realizing the seamless integration of many properties latent in nanomaterials, such as mechanical flexibility, strong spin-orbit coupling (Rashba spin splitting-RSS), and piezoelectricity. Taking cues from the pointers given on 1D ZnO nanowires (ACS Nano2018121811-20), the concept can be extended to multifunctional two-dimensional (2D) materials, which can serve as an ideal platform in next-generation electronics such as self-powered flexible piezo-spintronic device. However, a microscopically clear understanding reachable from the state-of-the-art density functional theory-based approaches is a prerequisite to advancing this research domain. Atomic-scale insights gained from meticulously performed scientific computations can firmly anchor the growth of this important research field, and that is of undeniable relevance from scientific and technological outlooks. This article reviews the scientific advance in understanding 2D materials hosting all the essential properties, i.e. flexibility, piezoelectricity, and RSS. Important 2D semiconducting monolayers that deserve a special mention, include monolayers of buckled MgX (X = S, Se, Te), CdTe, ZnTe, Janus structures of transition metal trichalcogenides, Janus tellurene and 2D perovskites. van Der Waals multilayers are also built to design multifunctional materials via modulation of the stacking sequence and interlayer coupling between the constituent layers. External electric field, strain engineering and charge doping are perturbations mainly used to tune the spintronic properties. Finally, the contact properties of these monolayers are also crucial for their actual implementation in electronic devices. The nature of the contacts, Schottky/Ohmic, needs to be carefully examined first as it controls the device's performance. In this regard, the rare occurrence of Ohmic contact in graphene/MgS van der Waals hetero bilayer has been presented in this review article.
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Affiliation(s)
- Fathima Is
- Institute of Nano Science and Technology, Knowledge City, Sector 81, Mohali, Punjab 140306, India
| | - Manish Kumar Mohanta
- Institute of Nano Science and Technology, Knowledge City, Sector 81, Mohali, Punjab 140306, India
| | - Abir De Sarkar
- Institute of Nano Science and Technology, Knowledge City, Sector 81, Mohali, Punjab 140306, India
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8
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Chen J, Wu K, Hu W, Yang J. High-Throughput Inverse Design for 2D Ferroelectric Rashba Semiconductors. J Am Chem Soc 2022; 144:20035-20046. [DOI: 10.1021/jacs.2c08827] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/05/2022]
Affiliation(s)
- Jiajia Chen
- Department of Chemical Physics, Hefei National Research Center for Physical Sciences at the Microscale, Synergetic Innovation Center of Quantum Information and Quantum Physics, Anhui Center for Applied Mathematics, and School of Data Science, University of Science and Technology of China, Hefei, Anhui230026, China
| | - Kai Wu
- Department of Chemical Physics, Hefei National Research Center for Physical Sciences at the Microscale, Synergetic Innovation Center of Quantum Information and Quantum Physics, Anhui Center for Applied Mathematics, and School of Data Science, University of Science and Technology of China, Hefei, Anhui230026, China
| | - Wei Hu
- Department of Chemical Physics, Hefei National Research Center for Physical Sciences at the Microscale, Synergetic Innovation Center of Quantum Information and Quantum Physics, Anhui Center for Applied Mathematics, and School of Data Science, University of Science and Technology of China, Hefei, Anhui230026, China
| | - Jinlong Yang
- Department of Chemical Physics, Hefei National Research Center for Physical Sciences at the Microscale, Synergetic Innovation Center of Quantum Information and Quantum Physics, Anhui Center for Applied Mathematics, and School of Data Science, University of Science and Technology of China, Hefei, Anhui230026, China
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9
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Jin Y, Li J, Wang G, Zhang Q, Liu Z, Mao X. Giant tunable Rashba spin splitting in two-dimensional polar perovskites TlSnX 3 (X = Cl, Br, I). Phys Chem Chem Phys 2022; 24:17561-17568. [PMID: 35822487 DOI: 10.1039/d2cp01980a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The electronic structures and Rashba effect of two-dimensional polar tetragonal perovskites TlSnX3 (X = Cl, Br, I) are investigated by first-principles density functional theory, and intrinsic Rashba effects are found around the Γ point. In particular, TlSnI3 has the largest Rashba constant of 1.072 eV Å-1. Additionally, TlSnBr3 and TlSnI3 respond strongly to the applied electric field, and the electric field responsivity of TlSnI3 can reach 0.790 e Å2. Therefore, due to the large Rashba constants and strong electric field responses, these 2D polar perovskites are promising semiconductor materials with short channel lengths. The nano-scale short spin coherence length can keep the spin coherence of spin FETs, which is superior to the traditional 3D micron spin FETs, and will show a broad application prospect in the Rashba semiconductor field.
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Affiliation(s)
- Yuming Jin
- School of Science, Hebei University of Technology, Tianjin 300401, P. R. China.
| | - Jia Li
- School of Science, Hebei University of Technology, Tianjin 300401, P. R. China.
| | - Guang Wang
- School of Science, Hebei University of Technology, Tianjin 300401, P. R. China.
| | - Qian Zhang
- School of Science, Hebei University of Technology, Tianjin 300401, P. R. China.
| | - Ze Liu
- School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300401, P. R. China
| | - Xiujuan Mao
- School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300401, P. R. China
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Xing ZY, Kuang XY, Mao AJ, Tian H, Yu M, Cui Y, Qiu JS. Spin-orbit coupling effect on pressure-induced phase transitions, magnetic, and electronic properties in YFeO3: A first-principles study. Chem Phys 2022. [DOI: 10.1016/j.chemphys.2022.111454] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/03/2022]
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11
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Chen J, Wu K, Hu W, Yang J. Spin-Orbit Coupling in 2D Semiconductors: A Theoretical Perspective. J Phys Chem Lett 2021; 12:12256-12268. [PMID: 34929086 DOI: 10.1021/acs.jpclett.1c03662] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
This theoretical Perspective reviews spin-orbit coupling (SOC), including the Rashba effect and Dresselhaus effect, in two-dimensional (2D) semiconductors. We first introduce the origin of the Rashba effect and Dresselhaus effect using the Hamiltonian models; we then summarize 2D Rashba semiconductors predicted by first-principles density functional theory (DFT) calculations, including AB binary monolayers, Janus monolayers, 2D perovskites, and so on. We also review various manipulating techniques of the Rashba effect on 2D semiconductors, such as external electric field, strain engineering, charge doping, interlayer interactions, proximity effect of substrates, and external magnetic field. We then briefly summarize the applications of SOC, including the generation, detection, and manipulation of spin currents in spin Hall effect transistors and spin field effect transistors. Finally, we conclude this Perspective and propose three promising research fields of SOC in low-dimensional semiconductors, including the nonlinear SOC Hamiltonian model, 2D ferroelectric SOC semiconductors, and 1D Rashba model and semiconductors. This theoretical Perspective enriches the fundamental understanding of SOC in 2D semiconductors and will help in the design of new types of spintronic devices in future experiments.
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Affiliation(s)
- Jiajia Chen
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Chemical Physics, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Kai Wu
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Chemical Physics, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Wei Hu
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Chemical Physics, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
| | - Jinlong Yang
- Hefei National Laboratory for Physical Sciences at the Microscale, Department of Chemical Physics, and Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei, Anhui 230026, China
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12
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Bhumla P, Gill D, Sheoran S, Bhattacharya S. Origin of Rashba Spin Splitting and Strain Tunability in Ferroelectric Bulk CsPbF 3. J Phys Chem Lett 2021; 12:9539-9546. [PMID: 34570976 DOI: 10.1021/acs.jpclett.1c02596] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Spin-orbit coupling (SOC) in conjunction with broken inversion symmetry acts as a key ingredient for several intriguing quantum phenomena, viz., Rashba-Dresselhaus (RD) effect. The coexistence of spontaneous polarization and the RD effect in ferroelectric (FE) materials enables the electrical control of spin degrees of freedom. Here, we explore the FE lead halide perovskite CsPbF3 as a potential candidate in the field of spintronics by employing state-of-the-art first-principles-based methodologies, viz., density functional theory (DFT) with semilocal and hybrid functional (HSE06) combined with SOC and many-body perturbation theory (G0W0). For a deeper understanding of the observed spin splitting, the spin textures are analyzed using the k.p model Hamiltonian. We find there is no out-of-plane spin component indicating that the Rashba splitting dominates over Dresselhaus splitting. We also observe that the strength of Rashba spin splitting can be substantially tuned on application of uniaxial strain (±5%). More interestingly, we notice reversible spin textures by switching the FE polarization in CsPbF3 perovskite, making it potent for perovskite-based spintronic applications.
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Affiliation(s)
- Preeti Bhumla
- Department of Physics, Indian Institute of Technology Delhi, New Delhi, India 110016
| | - Deepika Gill
- Department of Physics, Indian Institute of Technology Delhi, New Delhi, India 110016
| | - Sajjan Sheoran
- Department of Physics, Indian Institute of Technology Delhi, New Delhi, India 110016
| | - Saswata Bhattacharya
- Department of Physics, Indian Institute of Technology Delhi, New Delhi, India 110016
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