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Tan MJH, Patel SK, Chiu J, Zheng ZT, Odom TW. Liquid lasing from solutions of ligand-engineered semiconductor nanocrystals. J Chem Phys 2024; 160:154703. [PMID: 38624126 DOI: 10.1063/5.0201731] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/31/2024] [Accepted: 03/28/2024] [Indexed: 04/17/2024] Open
Abstract
Semiconductor nanocrystals (NCs) can function as efficient gain materials with chemical versatility because of their surface ligands. Because the properties of NCs in solution are sensitive to ligand-environment interactions, local chemical changes can result in changes in the optical response. However, amplification of the optical response is technically challenging because of colloidal instability at NC concentrations needed for sufficient gain to overcome losses. This paper demonstrates liquid lasing from plasmonic lattice cavities integrated with ligand-engineered CdZnS/ZnS NCs dispersed in toluene and water. By taking advantage of calcium ion-induced aggregation of NCs in aqueous solutions, we show how lasing threshold can be used as a transduction signal for ion detection. Our work highlights how NC solutions and plasmonic lattices with open cavity architectures can serve as a biosensing platform for lab-on-chip devices.
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Affiliation(s)
- Max J H Tan
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, USA
| | - Shreya K Patel
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, USA
| | - Jessica Chiu
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA
| | | | - Teri W Odom
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, USA
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, USA
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2
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Xiang W, Zhu B, Bai C, Gu B, Lv C, Zhang J. Thickness-modulated optical nonlinearity of colloidal CdSe-CdS core-shell nanoplatelets: large two-photon absorption and self-focusing effects. NANOSCALE 2023; 15:17996-18003. [PMID: 37906472 DOI: 10.1039/d3nr04532c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/02/2023]
Abstract
As a one-dimensional quantum confined material, colloidal semiconductor nanoplatelets have been widely studied as potential nonlinear materials due to their strong exciton effect and large two-photon absorption cross-section similar to that of two-dimensional materials. In this work, CdSe-CdS core-shell nanoplatelets were synthesized and third-order nonlinear optical properties related to shell thickness were measured using the Z-scan method. Measurement revealed a monotonic increase in the imaginary part of the third-order nonlinear susceptibility (Imχ(3)) of CdSe-CdS nanoplatelets, ranging from 0.62 × 10-13 esu to 2.43 × 10-13 esu, with the growth of shell thickness. The real part of the third-order nonlinear susceptibility (Reχ(3)) shows a non-monotonic change between 4.28 × 10-13 esu and 1.99 × 10-13 esu. The trends were further elucidated by analyzing the optical properties of the nanoplatelets, such as absorption, photoluminescence, and quantum yield, and understanding the variations in defect distribution, exciton binding energy, and quantum confinement effects. The results indicated that the appropriate passivation of the CdS shell effectively enhanced the luminescent performance and third-order nonlinearity of the nanoplatelets, while the induced defects and weakened quantum confinement effects due to the continued shell growth resulted in the opposite effect.
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Affiliation(s)
- Wenbin Xiang
- Advanced Photonics Center, Southeast University, Nanjing 210096, China.
| | - Baohua Zhu
- Institute of Micro/Nano Photonic Materials and Applications, School of Physics and Electronics, Henan University, Kaifeng 475004, China
| | - Chunzheng Bai
- Advanced Photonics Center, Southeast University, Nanjing 210096, China.
| | - Bing Gu
- Advanced Photonics Center, Southeast University, Nanjing 210096, China.
| | - Changgui Lv
- Advanced Photonics Center, Southeast University, Nanjing 210096, China.
| | - Jiayu Zhang
- Advanced Photonics Center, Southeast University, Nanjing 210096, China.
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3
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Bozkaya T, Isik F, Bozkaya I, Delikanli S, Unal E, Demir HV. Light-sensitive monolayer-thick nanocrystal skins of face-down self-oriented colloidal quantum wells. NANOSCALE 2023; 15:17583-17588. [PMID: 37873738 DOI: 10.1039/d3nr04065h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/25/2023]
Abstract
Colloidal quantum wells (CQWs), a quasi-two-dimensional, atomically-flat sub-family of semiconductor nanocrystals, are well suited to produce excellent devices for photosensing applications thanks to their extraordinarily large absorption cross-sections. In this work, we propose and demonstrate a new class of light-sensitive nanocrystal skins (LS-NS) that employ a monolayer of face-down orientation-controlled self-assembled CQWs as the active absorbing layer in the UV-visible range. This CQW LS-NS platform enables non-conventional photosensing operation that relies on the strong optical absorption of the monolayered assembly of CQWs and the subsequent photogenerated potential build-up across the device, allowing for self-powered operation. Here such self-oriented CQWs reduce the surface roughness in their monolayer-thick film, essential to high device performance. Owing to their ease of fabrication and low cost, these devices hold great promise for large-scale use in semi-transparent photosensing surfaces.
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Affiliation(s)
- Taylan Bozkaya
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM- Institute of Materials Science and Nanotechnology, and The National Nanotechnology Research Center, Bilkent University, Ankara 06800, Turkey.
| | - Furkan Isik
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM- Institute of Materials Science and Nanotechnology, and The National Nanotechnology Research Center, Bilkent University, Ankara 06800, Turkey.
| | - Iklim Bozkaya
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM- Institute of Materials Science and Nanotechnology, and The National Nanotechnology Research Center, Bilkent University, Ankara 06800, Turkey.
| | - Savas Delikanli
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM- Institute of Materials Science and Nanotechnology, and The National Nanotechnology Research Center, Bilkent University, Ankara 06800, Turkey.
- Luminous! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore.
| | - Emre Unal
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM- Institute of Materials Science and Nanotechnology, and The National Nanotechnology Research Center, Bilkent University, Ankara 06800, Turkey.
| | - Hilmi Volkan Demir
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM- Institute of Materials Science and Nanotechnology, and The National Nanotechnology Research Center, Bilkent University, Ankara 06800, Turkey.
- Luminous! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore.
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4
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Abstract
Lasers and optical amplifiers based on solution-processable materials have been long-desired devices for their compatibility with virtually any substrate, scalability, and ease of integration with on-chip photonics and electronics. These devices have been pursued across a wide range of materials including polymers, small molecules, perovskites, and chemically prepared colloidal semiconductor nanocrystals, also commonly referred to as colloidal quantum dots. The latter materials are especially attractive for implementing optical-gain media as in addition to being compatible with inexpensive and easily scalable chemical techniques, they offer multiple advantages derived from a zero-dimensional character of their electronic states. These include a size-tunable emission wavelength, low optical gain thresholds, and weak sensitivity of lasing characteristics to variations in temperature. Here we review the status of colloidal nanocrystal lasing devices, most recent advances in this field, outstanding challenges, and the ongoing progress toward technological viable devices including colloidal quantum dot laser diodes.
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Affiliation(s)
- Namyoung Ahn
- Nanotechnology and Advanced Spectroscopy Team, C-PCS, Chemistry Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Clément Livache
- Nanotechnology and Advanced Spectroscopy Team, C-PCS, Chemistry Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Valerio Pinchetti
- Nanotechnology and Advanced Spectroscopy Team, C-PCS, Chemistry Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
| | - Victor I Klimov
- Nanotechnology and Advanced Spectroscopy Team, C-PCS, Chemistry Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, United States
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5
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Durmusoglu EG, Hu S, Hernandez-Martinez PL, Izmir M, Shabani F, Guo M, Gao H, Isik F, Delikanli S, Sharma VK, Liu B, Demir HV. High External Quantum Efficiency Light-Emitting Diodes Enabled by Advanced Heterostructures of Type-II Nanoplatelets. ACS NANO 2023; 17:7636-7644. [PMID: 36912794 PMCID: PMC10134493 DOI: 10.1021/acsnano.3c00046] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/04/2023] [Accepted: 03/09/2023] [Indexed: 06/18/2023]
Abstract
Colloidal quantum wells (CQWs), also known as nanoplatelets (NPLs), are exciting material systems for numerous photonic applications, including lasers and light-emitting diodes (LEDs). Although many successful type-I NPL-LEDs with high device performance have been demonstrated, type-II NPLs are not fully exploited for LED applications, even with alloyed type-II NPLs with enhanced optical properties. Here, we present the development of CdSe/CdTe/CdSe core/crown/crown (multi-crowned) type-II NPLs and systematic investigation of their optical properties, including their comparison with the traditional core/crown counterparts. Unlike traditional type-II NPLs such as CdSe/CdTe, CdTe/CdSe, and CdSe/CdSexTe1-x core/crown heterostructures, here the proposed advanced heterostructure reaps the benefits of having two type-II transition channels, resulting in a high quantum yield (QY) of 83% and a long fluorescence lifetime of 73.3 ns. These type-II transitions were confirmed experimentally by optical measurements and theoretically using electron and hole wave function modeling. Computational study shows that the multi-crowned NPLs provide a better-distributed hole wave function along the CdTe crown, while the electron wave function is delocalized in the CdSe core and CdSe crown layers. As a proof-of-concept demonstration, NPL-LEDs based on these multi-crowned NPLs were designed and fabricated with a record high external quantum efficiency (EQE) of 7.83% among type-II NPL-LEDs. These findings are expected to induce advanced designs of NPL heterostructures to reach a fascinating level of performance, especially in LEDs and lasers.
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Affiliation(s)
- Emek G. Durmusoglu
- LUMINOUS!
Centre of Excellence for Semiconductor Lighting and Displays, The
Photonics Institute, School of Electrical and Electronic Engineering,
School of Physical and Mathematical Sciences, School of Materials
Science and Engineering, Nanyang Technological
University, Singapore 639798
| | - Sujuan Hu
- State
Key Laboratory of Optoelectronic Materials and Technologies, School
of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Pedro Ludwig Hernandez-Martinez
- LUMINOUS!
Centre of Excellence for Semiconductor Lighting and Displays, The
Photonics Institute, School of Electrical and Electronic Engineering,
School of Physical and Mathematical Sciences, School of Materials
Science and Engineering, Nanyang Technological
University, Singapore 639798
| | - Merve Izmir
- LUMINOUS!
Centre of Excellence for Semiconductor Lighting and Displays, The
Photonics Institute, School of Electrical and Electronic Engineering,
School of Physical and Mathematical Sciences, School of Materials
Science and Engineering, Nanyang Technological
University, Singapore 639798
| | - Farzan Shabani
- Department
of Electrical and Electronics Engineering, Department of Physics,
UNAM—Institute of Materials Science and Nanotechnology and
National Nanotechnology Research Center, Bilkent University, Ankara 06800, Turkey
| | - Min Guo
- State
Key Laboratory of Optoelectronic Materials and Technologies, School
of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Huayu Gao
- State
Key Laboratory of Optoelectronic Materials and Technologies, School
of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Furkan Isik
- Department
of Electrical and Electronics Engineering, Department of Physics,
UNAM—Institute of Materials Science and Nanotechnology and
National Nanotechnology Research Center, Bilkent University, Ankara 06800, Turkey
| | - Savas Delikanli
- Department
of Electrical and Electronics Engineering, Department of Physics,
UNAM—Institute of Materials Science and Nanotechnology and
National Nanotechnology Research Center, Bilkent University, Ankara 06800, Turkey
| | - Vijay Kumar Sharma
- LUMINOUS!
Centre of Excellence for Semiconductor Lighting and Displays, The
Photonics Institute, School of Electrical and Electronic Engineering,
School of Physical and Mathematical Sciences, School of Materials
Science and Engineering, Nanyang Technological
University, Singapore 639798
| | - Baiquan Liu
- State
Key Laboratory of Optoelectronic Materials and Technologies, School
of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China
| | - Hilmi Volkan Demir
- LUMINOUS!
Centre of Excellence for Semiconductor Lighting and Displays, The
Photonics Institute, School of Electrical and Electronic Engineering,
School of Physical and Mathematical Sciences, School of Materials
Science and Engineering, Nanyang Technological
University, Singapore 639798
- Department
of Electrical and Electronics Engineering, Department of Physics,
UNAM—Institute of Materials Science and Nanotechnology and
National Nanotechnology Research Center, Bilkent University, Ankara 06800, Turkey
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6
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Baruj HD, Bozkaya I, Canimkurbey B, Isik AT, Shabani F, Delikanli S, Shendre S, Erdem O, Isik F, Demir HV. Highly-Directional, Highly-Efficient Solution-Processed Light-Emitting Diodes of All-Face-Down Oriented Colloidal Quantum Well Self-Assembly. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023:e2206582. [PMID: 37021726 DOI: 10.1002/smll.202206582] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/25/2022] [Revised: 03/06/2023] [Indexed: 06/19/2023]
Abstract
Semiconductor colloidal quantum wells (CQWs) provide anisotropic emission behavior originating from their anisotropic optical transition dipole moments (TDMs). Here, solution-processed colloidal quantum well light-emitting diodes (CQW-LEDs) of a single all-face-down oriented self-assembled monolayer (SAM) film of CQWs that collectively enable a supreme level of IP TDMs at 92% in the ensemble emission are shown. This significantly enhances the outcoupling efficiency from 22% (of standard randomly-oriented emitters) to 34% (of face-down oriented emitters) in the LED. As a result, the external quantum efficiency reaches a record high level of 18.1% for the solution-processed type of CQW-LEDs, putting their efficiency performance on par with the hybrid organic-inorganic evaporation-based CQW-LEDs and all other best solution-processed LEDs. This SAM-CQW-LED architecture allows for a high maximum brightness of 19,800 cd m-2 with a long operational lifetime of 247 h at 100 cd m-2 as well as a stable saturated deep-red emission (651 nm) with a low turn-on voltage of 1.7 eV at a current density of 1 mA cm-2 and a high J90 of 99.58 mA cm-2 . These findings indicate the effectiveness of oriented self-assembly of CQWs as an electrically-driven emissive layer in improving outcoupling and external quantum efficiencies in the CQW-LEDs.
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Affiliation(s)
- Hamed Dehghanpour Baruj
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
| | - Iklim Bozkaya
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
| | - Betul Canimkurbey
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
- Central Research Laboratory, Amasya University, Amasya, 05100, Turkey
| | - Ahmet Tarik Isik
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
| | - Farzan Shabani
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
| | - Savas Delikanli
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
- LUMINOUS! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 639798, Singapore
| | - Sushant Shendre
- LUMINOUS! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 639798, Singapore
| | - Onur Erdem
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
| | - Furkan Isik
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
| | - Hilmi Volkan Demir
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
- LUMINOUS! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 639798, Singapore
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7
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Shabani F, Martinez PLH, Shermet N, Korkut H, Sarpkaya I, Dehghanpour Baruj H, Delikanli S, Isik F, Durmusoglu EG, Demir HV. Gradient Type-II CdSe/CdSeTe/CdTe Core/Crown/Crown Heteronanoplatelets with Asymmetric Shape and Disproportional Excitonic Properties. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2205729. [PMID: 36650974 DOI: 10.1002/smll.202205729] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/16/2022] [Revised: 12/22/2022] [Indexed: 06/17/2023]
Abstract
Characterized by their strong 1D confinement and long-lifetime red-shifted emission spectra, colloidal nanoplatelets (NPLs) with type-II electronic structure provide an exciting ground to design complex heterostructures with remarkable properties. This work demonstrates the synthesis and optical characterization of CdSe/CdSeTe/CdTe core/crown/crown NPLs having a step-wise gradient electronic structure and disproportional wavefunction distribution, in which the excitonic properties of the electron and hole can be finely tuned through adjusting the geometry of the intermediate crown. The first crown with staggered configuration gives rise to a series of direct and indirect transition channels that activation/deactivation of each channel is possible through wavefunction engineering. Moreover, these NPLs allow for switching between active channels with temperature, where lattice contraction directly affects the electron-hole (e-h) overlap. Dominated by the indirect transition channels over direct transitions, the lifetime of the NPLs starts to increase at 9 K, indicative of low dark-bright exciton splitting energy. The charge transfer states from the two type-II interfaces promote a large number of indirect transitions, which effectively increase the absorption of low-energy photons critical for nonlinear properties. As a result, these NPLs demonstrate exceptionally high two-photon absorption cross-sections with the highest value of 12.9 × 106 GM and superlinear behavior.
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Affiliation(s)
- Farzan Shabani
- UNAM - Institute of Materials Science and Nanotechnology and National Nanotechnology Research Center, Department of Electrical and Electronics Engineering, Department of Physics, Bilkent University, Ankara, 06800, Turkey
| | - Pedro Ludwig Hernandez Martinez
- LUMINOUS! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Materials Sciences, School of Materials Science and Nanotechnology, Nanyang Technological University, Singapore, 639798, Singapore
| | - Nina Shermet
- UNAM - Institute of Materials Science and Nanotechnology and National Nanotechnology Research Center, Department of Electrical and Electronics Engineering, Department of Physics, Bilkent University, Ankara, 06800, Turkey
| | - Hilal Korkut
- UNAM - Institute of Materials Science and Nanotechnology and National Nanotechnology Research Center, Department of Electrical and Electronics Engineering, Department of Physics, Bilkent University, Ankara, 06800, Turkey
| | - Ibrahim Sarpkaya
- UNAM - Institute of Materials Science and Nanotechnology and National Nanotechnology Research Center, Department of Electrical and Electronics Engineering, Department of Physics, Bilkent University, Ankara, 06800, Turkey
| | - Hamed Dehghanpour Baruj
- UNAM - Institute of Materials Science and Nanotechnology and National Nanotechnology Research Center, Department of Electrical and Electronics Engineering, Department of Physics, Bilkent University, Ankara, 06800, Turkey
| | - Savas Delikanli
- UNAM - Institute of Materials Science and Nanotechnology and National Nanotechnology Research Center, Department of Electrical and Electronics Engineering, Department of Physics, Bilkent University, Ankara, 06800, Turkey
- LUMINOUS! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Materials Sciences, School of Materials Science and Nanotechnology, Nanyang Technological University, Singapore, 639798, Singapore
| | - Furkan Isik
- UNAM - Institute of Materials Science and Nanotechnology and National Nanotechnology Research Center, Department of Electrical and Electronics Engineering, Department of Physics, Bilkent University, Ankara, 06800, Turkey
| | - Emek Goksu Durmusoglu
- LUMINOUS! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Materials Sciences, School of Materials Science and Nanotechnology, Nanyang Technological University, Singapore, 639798, Singapore
| | - Hilmi Volkan Demir
- UNAM - Institute of Materials Science and Nanotechnology and National Nanotechnology Research Center, Department of Electrical and Electronics Engineering, Department of Physics, Bilkent University, Ankara, 06800, Turkey
- LUMINOUS! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Materials Sciences, School of Materials Science and Nanotechnology, Nanyang Technological University, Singapore, 639798, Singapore
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Diroll BT, Guzelturk B, Po H, Dabard C, Fu N, Makke L, Lhuillier E, Ithurria S. 2D II-VI Semiconductor Nanoplatelets: From Material Synthesis to Optoelectronic Integration. Chem Rev 2023; 123:3543-3624. [PMID: 36724544 DOI: 10.1021/acs.chemrev.2c00436] [Citation(s) in RCA: 27] [Impact Index Per Article: 27.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/03/2023]
Abstract
The field of colloidal synthesis of semiconductors emerged 40 years ago and has reached a certain level of maturity thanks to the use of nanocrystals as phosphors in commercial displays. In particular, II-VI semiconductors based on cadmium, zinc, or mercury chalcogenides can now be synthesized with tailored shapes, composition by alloying, and even as nanocrystal heterostructures. Fifteen years ago, II-VI semiconductor nanoplatelets injected new ideas into this field. Indeed, despite the emergence of other promising semiconductors such as halide perovskites or 2D transition metal dichalcogenides, colloidal II-VI semiconductor nanoplatelets remain among the narrowest room-temperature emitters that can be synthesized over a wide spectral range, and they exhibit good material stability over time. Such nanoplatelets are scientifically and technologically interesting because they exhibit optical features and production advantages at the intersection of those expected from colloidal quantum dots and epitaxial quantum wells. In organic solvents, gram-scale syntheses can produce nanoparticles with the same thicknesses and optical properties without inhomogeneous broadening. In such nanoplatelets, quantum confinement is limited to one dimension, defined at the atomic scale, which allows them to be treated as quantum wells. In this review, we discuss the synthetic developments, spectroscopic properties, and applications of such nanoplatelets. Covering growth mechanisms, we explain how a thorough understanding of nanoplatelet growth has enabled the development of nanoplatelets and heterostructured nanoplatelets with multiple emission colors, spatially localized excitations, narrow emission, and high quantum yields over a wide spectral range. Moreover, nanoplatelets, with their large lateral extension and their thin short axis and low dielectric surroundings, can support one or several electron-hole pairs with large exciton binding energies. Thus, we also discuss how the relaxation processes and lifetime of the carriers and excitons are modified in nanoplatelets compared to both spherical quantum dots and epitaxial quantum wells. Finally, we explore how nanoplatelets, with their strong and narrow emission, can be considered as ideal candidates for pure-color light emitting diodes (LEDs), strong gain media for lasers, or for use in luminescent light concentrators.
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Affiliation(s)
- Benjamin T Diroll
- Center for Nanoscale Materials, Argonne National Laboratory, 9700 S. Cass Avenue, Lemont, Illinois 60439, United States
| | - Burak Guzelturk
- X-ray Science Division, Advanced Photon Source, Argonne National Laboratory, 9700 S. Cass Avenue, Lemont, Illinois 60439, United States
| | - Hong Po
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin 75005 Paris, France
| | - Corentin Dabard
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin 75005 Paris, France
| | - Ningyuan Fu
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin 75005 Paris, France
| | - Lina Makke
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin 75005 Paris, France
| | - Emmanuel Lhuillier
- Sorbonne Université, CNRS, Institut des NanoSciences de Paris, INSP, 75005 Paris, France
| | - Sandrine Ithurria
- Laboratoire de Physique et d'Etude des Matériaux, ESPCI-Paris, PSL Research University, Sorbonne Université Univ Paris 06, CNRS UMR 8213, 10 rue Vauquelin 75005 Paris, France
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9
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Delikanli S, Isik F, Durmusoglu EG, Erdem O, Shabani F, Canimkurbey B, Kumar S, Dehghanpour Baruj H, Demir HV. Observation of optical gain from aqueous quantum well heterostructures in water. NANOSCALE 2022; 14:14895-14901. [PMID: 36106594 DOI: 10.1039/d2nr03659b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Although achieving optical gain using aqueous solutions of colloidal nanocrystals as a gain medium is exceptionally beneficial for bio-optoelectronic applications, the realization of optical gain in an aqueous medium using solution-processed nanocrystals has been extremely challenging because of the need for surface modification to make nanocrystals water dispersible while still maintaining their gain. Here, we present the achievement of optical gain in an aqueous medium using an advanced architecture of CdSe/CdS@CdxZn1-xS core/crown@gradient-alloyed shell colloidal quantum wells (CQWs) with an ultralow threshold of ∼3.4 μJ cm-2 and an ultralong gain lifetime of ∼2.6 ns. This demonstration of optical gain in an aqueous medium is a result of the carefully heterostructured CQWs having large absorption cross-section and gain cross-section in addition to inherently slow Auger recombination in these CQWs. Furthermore, we show low-threshold in-water amplified spontaneous emission (ASE) from these aqueous CQWs with a threshold of 120 μJ cm-2. In addition, we demonstrate a whispering gallery mode laser with a low threshold of ∼30 μJ cm-2 obtained by incorporating films of CQWs by exploiting layer-by-layer approach on a fiber. The observation of low-threshold optical gain with ultralong gain lifetime presents a significant step toward the realization of advanced optofluidic colloidal lasers and their continuous-wave pumping.
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Affiliation(s)
- Savas Delikanli
- Luminous! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore.
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara 06800, Turkey
| | - Furkan Isik
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara 06800, Turkey
| | - Emek G Durmusoglu
- Luminous! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore.
| | - Onur Erdem
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara 06800, Turkey
| | - Farzan Shabani
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara 06800, Turkey
| | - Betul Canimkurbey
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara 06800, Turkey
- Serefeddin Health Services Vocational School, Central Research Laboratory, Amasya University, Amasya 05100, Turkey
| | - Satish Kumar
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara 06800, Turkey
| | - Hamed Dehghanpour Baruj
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara 06800, Turkey
| | - Hilmi Volkan Demir
- Luminous! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, School of Physical and Mathematical Sciences, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore.
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara 06800, Turkey
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Shabani F, Dehghanpour Baruj H, Yurdakul I, Delikanli S, Gheshlaghi N, Isik F, Liu B, Altintas Y, Canımkurbey B, Demir HV. Deep-Red-Emitting Colloidal Quantum Well Light-Emitting Diodes Enabled through a Complex Design of Core/Crown/Double Shell Heterostructure. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2106115. [PMID: 34894078 DOI: 10.1002/smll.202106115] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/08/2021] [Revised: 11/13/2021] [Indexed: 06/14/2023]
Abstract
Extending the emission peak wavelength of quasi-2D colloidal quantum wells has been an important quest to fully exploit the potential of these materials, which has not been possible due to the complications arising from the partial dissolution and recrystallization during growth to date. Here, the synthetic pathway of (CdSe/CdS)@(1-4 CdS/CdZnS) (core/crown)@(colloidal atomic layer deposition shell/hot injection shell) hetero-nanoplatelets (NPLs) using multiple techniques, which together enable highly efficient emission beyond 700 nm in the deep-red region, is proposed and demonstrated. Given the challenges of using conventional hot injection procedure, a method that allows to obtain sufficiently thick and passivated NPLs as the seeds is developed. Consequently, through the final hot injection shell coating, thick NPLs with superior optical properties including a high photoluminescence quantum yield of 88% are achieved. These NPLs emitting at 701 nm exhibit a full-width-at-half-maximum of 26 nm, enabled by the successfully maintained quasi-2D shape and minimum defects of the resulting heterostructure. The deep-red light-emitting diode (LED) device fabricated with these NPLs has shown to yield a high external quantum efficiency of 6.8% at 701 nm, which is on par with other types of LEDs in this spectral range.
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Affiliation(s)
- Farzan Shabani
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
| | - Hamed Dehghanpour Baruj
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
| | - Iklim Yurdakul
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
| | - Savas Delikanli
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
- Luminous! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Negar Gheshlaghi
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
| | - Furkan Isik
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
| | - Baiquan Liu
- School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou, 510275, China
| | - Yemliha Altintas
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
- Department of Materials Science and Nanotechnology, Abdullah Gül University, Kayseri, TR-38080, Turkey
| | - Betül Canımkurbey
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
- Central Research Laboratory, Amasya University, Amasya, 05100, Turkey
| | - Hilmi Volkan Demir
- Department of Electrical and Electronics Engineering, Department of Physics, UNAM - Institute of Materials Science and Nanotechnology, Bilkent University, Ankara, 06800, Turkey
- Luminous! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
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